Ab initio modelling of boron and nitrogen in diamond nanowires

In this study an analysis is presented of the bonding and structural properties of dehydrogenated and hydrogenated doped cylindrical diamond nanowires calculated using the Vienna Ab Initio Simulation Package, employing density functional theory within the generalized-gradient approximation. The dopants studied here have been inserted substitutionally along the axis of an infinite one-dimensional diamond nanowire and include the single-electron acceptor boron and the single-electron donor nitrogen. The doped nanowires have then been re-relaxed, and properties compared with the undoped structures. The structural properties of relaxed nanowires considered here include an examination bonding via the electron charge density, with the aim of providing a better understanding of the effects of dopants on the stability of diamond nanostructures and nanodevices.     

氢吸附金刚石（001）表面的第一性原理研究

采用第一性原理方法研究氢吸附的金刚石（001）表面，计算了氢吸附金刚石表面构型.通过分析吸附前后空间电荷分布的变化，发现吸附H原子的金刚石（001）表面电荷向H原子转移，即表明氢吸附的金刚石表面带负电.分析了这种现象的微观机制，以及它对金刚石表面电学性质的影响. 关键词： 第一性原理计算 金刚石（001）面 表面吸附 电荷密度分布     

Ab initio modelling of band states in doped diamond

Presented in this study is an analysis of the electronic properties of doped diamond calculated using the Vienna ab initio simulation package, employing density functional theory within the generalized-gradient approximation. The dopants studied here have been inserted substitutionally into a 64-atom diamond supercell and include the single-electron acceptors boron and aluminium, the single-electron donors nitrogen and phosphorus and the double-electron donors oxygen and sulphur. Co-doping of diamond with sulphur and boron has also been briefly examined. The doped supercells have been relaxed, followed by calculation of electronic properties from the electronic density of states such as the indirect bandgap E _g, the valence bandwidth and an examination of the acceptor and donor states in the bandgap. It is anticipated that this study will provide a useful comparison of the third- and fourth-row donors and acceptors in diamond.     

Nitrogen and Boron substitutional doped zigzag silicene nanoribbons: Ab initio investigation

We performed a spin polarized density-function theory study of the stabilities, electronic and magnetic properties of zigzag silicene nanoribbons (ZSiNRs) substitutionally doped with a single N or B atom located at various sites ranging from edge to center of the ribbon. From minimization of the formation energy, it is found that the substitutional doping is favorable at edge of the ribbon. A single N or B atom substitution one edge Si atom of ZSiNRs can greatly suppress the spin-polarizations of the impurity atom site and its vicinity region, and leads to a transition from antiferromagnetic (AFM) state to ferromagnetic (FM) state, which is attributed to the splitting of the original spin degenerate edge bands. A single N atom doped ZSiNRs still keep semiconductor property but a single B atom doped ZSiNRs exhibit a half-metallic character. Our results reveal that substitution doped ZSiNRs have potential applications in Si-based nanoelectronics, such as field effect transisitors (FETs), negative differential resistance (NDR) and spin filter (SF) devices.     

Ab initio study of dielectric function of C-substituted single walled boron nanotubes

We report dielectric function related optical properties namely dielectric constant, static dielectric constant, and absorption coefficients of C-substituted hexagonal boron nanotubes. The optical properties were computed for parallel and perpendicular polarized light in the framework of density functional theory. In this regard, three models of BNTs namely armchair (3,3), zigzag (5,0), and chiral (4,2) have been undertaken for probing the effect of carbon impurity. Our calculations show high dielectric constant of armchair and chiral BNTs for parallel polarized light and magnitude becomes smaller for higher impurity concentration, while zigzag BNT exhibits reverse trend for high impurity concentration. For perpendicular polarized light, the magnitude of dielectric constant ε ₁(ω) is decreased and shifts at higher frequencies. The absorption is revealed highest for armchair followed by zigzag and chiral BNTs independent of impurity concentration. The intensity of absorption gets weaken for higher concentration. The chiral BNTs show smaller but uniform absorption in smaller frequency range results in uniform field emission. These findings are also compared with available experimental and theoretical results. These metallic nanotubes are promising candidate as interconnects for nanodevices as well as field emission devices.     

Ab initio study on the anisotropy of mechanical behavior and deformation mechanism for boron carbide

The mechanical properties and deformation mechanisms of boron carbide under a-axis and c-axis uniaxial compression are investigated by ab initio calculations based on the density functional theory.Strong anisotropy is observed.Under a-axis and c-axis compression,the maximum stresses are 89.0 GPa and 172.2 GPa respectively.Under a-axis compression,the destruction of icosahedra results in the unrecoverable deformation,while under c-axis compression,the main deformation mechanism is the formation of new bonds between the boron atoms in the three-atom chains and the equatorial boron atoms in the neighboring icosahedra.     

Ab initio modelling of dopants in diamond nanowires: Ii

In this study an analysis is presented of the bonding and structural properties of dehydrogenated and hydrogenated doped cylindrical diamond nanowires calculated using the Vienna Ab Initio Simulation Package, employing density functional theory within the generalized-gradient approximation. The dopants studied here have been inserted substitutionally, equidistant along the axis of an infinite (periodic) diamond nanowire. These dopants include aluminium, phosphorus, oxygen and sulphur. The doped nanowires have then been re-relaxed, and properties compared with previously calculated results for undoped, boron-doped and nitrogen-doped structures. Structural properties of relaxed nanowires considered here include an examination bonding via the electron charge density, with the aim of providing a better understanding of the effects of dopants on the stability of diamond nanostructures and nanodevices.     

Ab initio study for the intermolecular interaction potential surface of Ar-N2 complex

The intermolecular interaction potentials of van der Waals Ar-N2 complex have been studied by ab initio calculations using the single and double excitation coupled cluster [CCSD(T)] theory with perturbative triples correction. The full counterpoise method is applied to correct the basis set superposition error (BSSE). It is found that the T-shaped structure is the most stable conformation with the well depth De of 12.40 meV at the minimum distance Rm of 3.70 Å. The calculated anisotropic values for Rm, R0 and De are 0.56 Å, 0.54 Å and 2.68 meV, respectively. Compared with those obtained by others, our calculated PES seems to be in better agreement with experiments.     

氘、氚代聚苯乙烯单体abinitio研究

用HF,MP2及BLYP从头算方法,在6—31G基组水平上,优化了聚苯乙烯单体基态的平衡几何构型.主要用BLYP6—31方法研究了氘、氚代聚苯乙烯单体(DPS,PST)的正则振动频率、红外光谱强度、C—D键键能,并对正则振动模式进行了简单分析,同时研究了DPS,PST单体中温度、压强与熵的关系. 关键词： 平衡几何构型 正则振动频率 红外光谱强度 键能     

First principles study of phosphorus and boron substitutional defects in Si-XII

We present a first principles study of boron and phosphorus substitutional defects in Si-XII. Recent results from nanoindentation experiments reveal that the Si-XII phase is semiconducting and has the interesting property that it can be doped n- and p-type at room temperature without an annealing step. Using the hybrid functional of Heyd, Scuseria and Ernzerhof (HSE), we examine the formation energies of the B and P defects at the two distinct atomic sites in Si-XII to find on which site the substitutional defects are more easily accommodated. We also estimate the thermodynamic transition levels of each defect in its relevant charge states. The hybrid calculations also give an independent prediction that Si-XII is semiconducting, in agreement with recent experimental data.     

Ab initio study of the photodissociation of ammonia

An ab initio SCF and CI treatment of the electronic spectrum of ammonia in both the pyramidal and planar conformation is reported which employs an [8, 6, $\text{1}\text{4}$, 1] AO basis of near Hartree-Fock quality; the ground state CI energy obtained for the equilibrium conformation is ?56.4241 a.u. In addition, further calculations have been carried out at the SCF level to study various photodissociation reactions of NH₃. The calculated CI transition energies are seen to agree with corresponding experimental values to within 0.0–0.3 eV, usually in the 0.1-eV range. Photodissociation to the $\text{NH}{}_2\text{(}{}^2\text{B}\text{?}{}_1\text{) +}\text{H}\text{(}{}^2\text{S)}$ products is confirmed thereby to proceed via the $\text{A}\text{?}\text{1a″}{}_2\text{→ 3s}$ state of ammonia, but contrary to earlier speculation it is found that the transformation between reactant and products is already satisfactorily described at the SCF or orbital level, i.e., a Rydberg 3s of NH₃ is seen to be gradually converted into a pure hydrogenic 1s species as dissociation proceeds. In addition the photolysis of NH₃ to NH₂$\text{(}{}^2\text{A}{}_1\text{) +}\text{H}\text{(}{}^2\text{S)}$ is argued to occur via the $\text{C}\text{?}\text{1a″}{}_2\text{→ 3pz}{}^1\text{A′}{}_1$ state and as such is seen to be a symmetry allowed process, in contrast to the previous assignment involving the $\text{B}\text{?}\text{1a″}{}_2\text{→ 3px}$, $\text{y}{}^1\text{E″}$ species. Finally an attempt is made to analyze the mechanisms of various NH + H₂ photodissociation processes with the help of SCF calculations and symmetry arguments for various higher-lying excited states of ammonia.     

Ab initio study of the polymerisation of cyclopentasilane

The molecular structures and vibration modes of cyclopentasilane (Si₅H₁₀) have been examined by employing ab initio and density-functional methods. Three different structures of Si₅H₁₀ with different symmetries are analysed, and the results show that the envelope (C _s ) and the twist (C₂) forms have similar energies and that the planar form (D_5h ) is about 50 meV less stable than the C _s and C₂ forms. The excited-state potential energy surface of Si₅H₁₀ is performed using the CIS electronic energy calculation. The ring-open reaction of Si₅H₁₀ is investigated in detail by using the first-principles molecular-dynamics simulation for screening the reaction pathways. The formation of Si–H–Si is found to play an important role in the ring-open reaction.     

Ab initio study of palladium and silicon carbide

Ab initio methods have been used to investigate the properties of Pd as impurity in bulk SiC at five charged states within the framework of density functional theory using the local spin density approximation. It was found that Pd interstitials and substitutionals have similar energy to their intrinsic counterparts. In addition, Pd substitutes for a vacancy, di-vacancy, and tri-vacancy with similar energies. Pd diffuses through SiC via an interstitial mechanism employing the tetrahedral sites and Pd can substitute for Si and C at positive charged states. Removing electrons (p-type doping) from SiC lowers the formation and migration energies of Pd defects in SiC for most configurations.     

Ab initio study of graphene on SiC

Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast with earlier assumptions, the first carbon layer is covalently bonded to the substrate and cannot be responsible for the graphene-type electronic spectrum observed experimentally. The characteristic spectrum of freestanding graphene appears with the second carbon layer, which exhibits a weak van der Waals bonding to the underlying structure. For Si-terminated substrate, the interface is metallic, whereas on C face it is semiconducting or semimetallic for single or double graphene coverage, respectively.     

Ab initio study of SrTiO3 surfaces

We present first-principles total-energy calculations of (001) surfaces of SrTiO₃. Both SrO-terminated and TiO₂-terminated surfaces are considered, and the results are compared with previous calculations for BaTiO₃ surfaces. The major differences are in the details of the relaxed surface structures. Our calculations argue against the existence of a large ferroelectric relaxation in the surface layer, as had been previously proposed. We do find some indications of a weak surface ferroelectric instability, but so weak as to be easily destroyed by thermal fluctuations, except perhaps at quite low temperatures. We also compute surface relaxation energies and surface electronic band structures, obtaining results that are generally similar to those for BaTiO₃.     

Ab initio study of PrAg intermetallic compound

In this work, a first-principles study on PrAg compound using the density functional theory implemented in the projector-augmented wave (PAW) method in the CsCl (B2) crystal structure has been performed. Based on the optimized structural parameter, which is in good agreement with experimental data, the electronic structure, elastic, thermodynamics and vibrational properties have been investigated. The temperature and pressure variations of volume, bulk modulus, thermal expansion coefficient, heat capacities, and Debye temperatures in wide pressure (0-30 GPa) and temperature ranges have also been predicted.     

黑索金的电子结构和热解机理的从头算研究

利用从头算梯度修正密度泛函理论,我们在B3LYP/6-31G(d,p)水平上,计算了高能炸药黑索金(RDX)及其热解中间产物C3H6N5O4和NO2等的电子结构、能量、键级和一些热力学性质,并在此基础上,计算了键离解能和反应速率常数.此外,我们还分别从键级和键离解能角度,讨论了RDX的热解机理,所得结果与实验一致.