SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源

我们借助傅立叶变换红外光谱（FT－IR）以及光致激发谱（PLE）,研究SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源。谱分析表明,该红外光发射并非起源于纳米锗、硅的量子限制效应以及锗、硅的中性氧空位,而与锗的氧化物紧密相关。PLE的结果证实它们来源于GeO色心TⅡ‘→S0的光学跃迁,给出的GeO电子态模型描述了载流子激发和复合的过程。     

Fabrication of ultralow-loss Si/SiO(2) waveguides by roughness reduction

We demonstrate 0.8-dB/cm transmission loss for a single-mode, strip Si/SiO(2) waveguide with submicrometer cross-sectional dimensions. We compare the conventional waveguide-fabrication method with two smoothing technologies that we have developed, oxidation smoothing and anisotropic etching. We observe significant reduction of sidewall roughness with our smoothing technologies, which directly results in reduced scattering losses. The rapid increase in the scattering losses as the waveguide dimension is miniaturized, as seen in conventionally fabricated waveguides, is effectively suppressed in the waveguides made with our smoothing technologies. In the oxidation smoothing case, the loss is reduced from 32 dB/cm for the conventional fabrication method to 0.8 dB/cm for the single-mode waveguide width of 0.5 microm . This is to our knowledge the smallest reported loss for a high-index-difference system such as a Si/SiO(2) strip waveguide.     

Annealing effects on residual stress of HfO2/SiO2 multilayers

HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method.The effects of annealing at the temperature between 200 and 400℃ on residual stresses have been studied.It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is compressive.It becomes tensile after annealing at 200℃,and then the value of tensile stress increases as annealing temperature increases.And cracks appear in the film because tensile stress is too large when the sample is annealed at 400℃.At the same time,the crystallite size increases and interplanar distance decreases with the increase of annealing temperature.The variation of residual stresses is corresponding with the evolution of structures.     

Nanowires of iron oxides embedded in SiO2 templates

To attain the complete filling of the channels of MCM-41 with magnetite and maghemite, we have tried out an alternative method to the incipient wetness impregnation. The mesoporous material was instilled with a Fe-carrying organic salt after subjecting the matrix to a silylation treatment. Thus, a solid of 7.7 wt.% iron-loaded MCM-41 was obtained. Different subsequent thermal treatments were used to produce γ-Fe₂O₃ or Fe₃O₄. The Mössbauer and magnetic results show that after this method, the as-prepared composite displays a size-distribution of magnetic particles. It is mainly made up of fine particles that display a superparamagnetic relaxation at room temperature and get blocked at ≈42 K for the AC susceptibility time-scale measurements both for γ-Fe₂O₃ and Fe₃O₄ particles. For both samples, about 24% of larger iron-containing phases are magnetically blocked at room temperature. For the Fe₃O₄ particles, this fraction undergoes the Verwey transition at about 110 K; in addition, there is a minor Fe (III) fraction that remains paramagnetic down to 4.2 K.     

TiN/SiO2纳米多层膜的晶体生长与超硬效应

高硬度的含氧化物纳米多层膜在工具涂层上具有重要的应用价值.研究了TiN/SiO2纳米多层膜的晶体生长特征和超硬效应.一系列具有不同SiO2和TiN调制层厚的纳米多层膜采用多靶磁控溅射法制备;采用x射线衍射、x射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能.结果表明,虽然以单层膜形式存在的TiN和SiO2分别形成纳米晶和非晶结构,它们组成多层膜时会因晶体生长的互促效应而呈现共格外延生长的结构特征.在SiO2调制层厚度约小于1 nm时,多层膜呈现强烈的(111)织构,并伴随着硬度和弹性模量的显著上升,最高硬度和弹性模量分别达到44.5和473 GPa.进一步增加SiO2层的厚度,由于SiO2层呈现非晶态,多层膜的共格外延生长受到抑制,硬度也相应降低.TiN调制层厚度的改变虽对多层膜的生长结构和力学性能也有影响,但并不明显.     

GaAs/SiO_2超晶格的制备和Raman光谱研究

我们采用射频磁控溅射方法在 p- Si衬底上成功地制备出四周期的非晶 Ga As/Si O2超晶格 ,并取得其高分辨率电镜像。以 80 0℃快速退火方法使超晶格中非晶的 Ga As层局部晶化 ,利用 Raman散射谱研究了其结构变化。     

Selective area growth of GaInNAs/GaAs by MOVPE

Selective area growth (SAG) of GaInNAs/GaAs systems has been studied by metalorganic vapor-phase epitaxy (MOVPE) for the first time. This also includes a comparative study of SAG of the GaInAs/GaAs. The patterns consisted of various filling factors (F). The band gap changes and the growth morphology have been investigated. A red-shift observed for SAG GaInAs is 100 nm with respect to the planar GaInAs which can be attributed to both In enrichment and quantum well (QW) thickness enhancement. Selectively grown GaInNAs structures exhibit a maximum wavelength of 1.3 μm, corresponding to a red-shift of 80 nm with respect to the planar GaInNAs. Atomic force microscopy (AFM) scans reveal a three-dimensional growth behaviour for SAG GaInNAs unlike SAG GaInAs. This can be related to a certain amount of phase separation or strain that are often the signatures of N incorporation. The cathodoluminescence (CL) intensities (spectral line width) for SAG GaInNAs are larger (smaller) than those for SAG GaInAs at low F's but smaller (larger) at high F's. This indicates that at low F's, GaInAs has degraded due to very high strain but certain amount of strain compensation occurs in GaInNAs.     

Ordering effects in InGaP/GaAs and InGaAsP/GaAs heterostructures grown by LP-MOVPE

Summary The cationic ordering in InGaP epilayers grown by low-pressure vapour phase epitaxy on GaAs substrates has been investigated by X-ray diffraction. The effects of both the substrate miscut and the doping with Si and Zn have been studied. It has been found that ordering effects occur inside relatively small domains on (1–11) and (−111) planes; however, by increasing the miscut angle the domains of the first kind tend to increase their dimensions, while the second ones tend to disappear. Moreover, doping with impurities substituting cations is seen to destroy the order. Photoluminescence anomalies have been revealed and correlated to the size and ordering degree of the ordered domain.     

SiO2纳米粒子在毛细管电泳分离蛋白质中的应用

将SiO2纳米粒子作为添加剂用于溶菌酶、牛血清白蛋白、牛血红蛋白的毛细管电泳(CE)分离研究.对影响3种蛋白质分离的因素如缓冲溶液的浓度,SiO2纳米粒子、聚合物PVP、乙腈的含量,及分离电压、温度等进行了考察,得到最佳分离条件,即50mmol/L NaH2PO4-10mmol/L H3PO4缓冲溶液(pH=2.8),...     

非晶Si/SiO2超晶格结构的交流电致发光

设计并用磁控溅射方法制备了非晶Ｓｉ／ＳｉＯ２超晶格结构,以高纯多晶Ｓｉ为靶材,当以Ａｒ＋Ｏ２为溅射气氛时,得到ＳｉＯ２膜,仅以Ａｒ为气氛时,得到Ｓｉ膜。重复地开和关Ｏ２气,便交替地得到ＳｉＯ２和Ｓｉ膜。衬底在靶前往返平移,改变平移的速度或者改变溅射的功率,可以控制膜的厚度。通过透民镜的照片可以看出ＳｉＯ２和Ｓｉ膜具有均匀的周期结构,用低角Ｘ－射线反射谱表征了超晶格的周期结构和各层的厚度。透射光谱表     

Structural characteristics of mixed oxides MOx/SiO2 affecting photocatalytic decomposition of methylene blue

A series of photocatalysts based on silica (nanoparticulate) supported titania, ceria, and ceria/zirconia were synthesized and characterized by a variety of techniques including surface area measurements, X-ray diffraction, Fourier transform infrared spectroscopy, zeta potential, surface charge density, and photocatalytic behavior toward methylene blue decomposition. Thermal treatment at 600 °C increases the anatase content of the titania based catalysts detected by XRD. Changes in the infrared spectra before and after thermal treatment indicate that at low temperature there are more SiOTi bonds than at high temperature. As these bonds break upon heating the SiO₂ and TiO₂ separate, allowing the TiO₂ anatase phase to form. This results in an increased catalytic activity for the thermally treated samples. Nearly all titania based samples exhibit a negative surface charge density at pH 7 (initial pH of photocatalytic studies) which aids adsorption of methylene blue. The crystallinity of ceria and ceria/zirconia based catalysts are in some cases limited, and in others non-existent. Even though the energy band gap (E_g) can be lower for these catalysts than for the titania based catalysts, their photocatalytic properties are inferior.     

Loading channels of SiO 2 mesoporous matrices with Fe oxides

After embedding hematite nanowires (15 wt.% Fe) into a MCM-41 hard template, we have explored alternative routes to induce the structural transformations that lead from hematite to maghemite and magnetite embedded nanowires. The impregnation media (ethanol or water) and the calcination atmosphere (air and NO/He) on the hematite nanowires production play a significant role at the time of reducing and re-oxidizing the embedded hematite nanoparticles. The solids were characterized by X-ray diffraction, nitrogen adsorption, and Mössbauer spectroscopy. The results indicate that the effect of the solvent on the structural properties of the iron species is more important than the calcination atmosphere. The best conditions for iron magnetic nanowires not to get outside of the MCM-41 channels over the treatments are reached using water as the solvent and air as the calcination atmosphere. When ethanol is the solvent used over the preparation step, the end iron oxides are in the form of nanotubes spread out on the amorphous silica walls of the matrix.     

Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO₂ mask on the thermal stress are studied. It is found that the SiO₂ mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO₂ mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.     

TiN/SiO2纳米多层膜的晶体生长与超硬效应

高硬度的含氧化物纳米多层膜在工具涂层上具有重要的应用价值.研究了TiN/SiO2_{2纳米多 层膜的晶体生长特征和超硬效应.一系列具有不同SiO22和TiN调制层厚的纳米多 层膜采用多 靶磁控溅射法制备；采用x射线衍射、x射线能量色散谱、高分辨电子显微镜和微力学探针表 征了多层膜的微结构和力学性能.结果表明，虽然以单层膜形式存在的TiN和SiO22分别形成 纳米晶和非晶结构，它们组成多层膜时会因晶体生长的互促效应而呈现共格外延生长的结构 特 关键词： 2纳米多层膜')" href="#">TiN/SiO22纳米多层膜 外延生长 非晶晶化 超硬效应}     

Formation of Si nanowires by the electrochemical reduction of porous Ni/SiO2 blocks in molten CaCl2

Silicon nanowires (SiNWs) were prepared by the electrochemical reduction of solid Ni/SiO₂ blocks in molten CaCl₂ at 1173 K. The SiNWs have diameter distributions ranging from 80 to 350 nm, and the nickel–silicon droplets are found on the tips of the nanowires. The growth mechanism of SiNWs was investigated, which confirmed that the nano-sized nickel–silicon droplets formed at the Ni/SiO₂/CaCl₂ three-phase interline. The droplets lead to the oriented growth of SiNWs. Formation of nano-sized nickel–silicon droplets suggests that this method could be a potential way to produce nano-sized metal silicides.     

GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究

采用射频磁控共溅射与高真空退火相结合的方法,分别在单晶硅片和光学石英玻璃片上制备了ＧａＡｓ／ＳｉＯ２纳米晶镶嵌薄膜样品。激光拉曼光谱的测量结果表明,退火态样品（４００℃,６０ｍｉｎ）的拉曼光谱特征峰呈现宽化和红移,红移量为９．５ｃｍ＾－１,对应薄膜中ＧａＡｓ纳米晶粒平均粒径约为３ｎｍ。样品的室浊吸收光谱测量结果表明,由于受量子限域效应的主导作用,与ＧａＡｓ块状单晶相比,样品光学吸收边呈现出明显的蓝     

Defect reduction and surface passivation of SiO2/Si by heat treatment with high-pressure H2O vapor

Heat treatment with high-pressure H₂O vapor was applied to improve interface properties of SiO₂/Si and passivate the silicon surface. Heat treatment at 180–420 °C with high-pressure H₂O vapor changed SiO_x films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO₂ films with a Si-O-Si bonding network similar to that of thermally grown SiO₂ films. Heat treatment at 130 °C with 2.8×10⁵ Pa H₂O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiO_x/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiO_x films on the SiO₂ films formed by heat treatment at 340 °C with high-pressure H₂O vapor. The SiO_x deposition reduced the recombination velocity from 100 cm/s to 48 cm/s. Received: 1 March 1999 / Accepted: 28 March 1999 / Published online: 24 June 1999     

PdCl_2/SiO_2和Pd-B/SiO_2非晶态合金催化剂的Raman光谱表征

采用共焦显微Ｒａｍａｎ光谱和Ｘ－射线衍射方法表征了负载型ＰｄＣｌ２／ＳｉＯ２和Ｐｄ－Ｂ／ＳｉＯ２非晶态合金催化剂的结构。结果表明ＰｄＣｌ２分散在ＳｉＯ２载体上后,与载体表面的相互作用使其在室温时即发生β→α构型转变。Ｐｄ－Ｂ／ＳｉＯ２非晶态合金的Ｒａｍａｎ光谱在３００－５００ｃｍ－１区域内呈现一大的弥散峰。与无负载Ｐｄ－Ｂ非晶态合金比较初步认定该弥散峰与Ｐｄ－Ｂ键振动有关,温度升高Ｐｄ－Ｂ／ＳｉＯ２催化活性下降,其主要原因为Ｐｄ－Ｂ／ＳｉＯ２非晶态合金在高温下逐渐晶化为Ｐｄ金属所致。ＰｄＣｌ２与ＳｉＯ２载体表面的相互作用使其具有较高的分散性,由此还原制备的Ｐｄ－Ｂ／ＳｉＯ２非晶态合金较之无负载Ｐｄ－Ｂ非晶态合金更加微细化,因而具有更大的活性比表面     

Pressure-induced structural changes in liquid SiO2 from Ab initio simulations

First-principles molecular dynamics simulations at constant pressure have been used to investigate the mechanisms of compression of liquid SiO2. Liquid SiO2 is found to become denser than quartz at a pressure of about 6 GPa, in agreement with extrapolations of lower pressure experimental data. The high compressibility of the liquid is traced to medium-range changes in the topology of the atomic network. These changes consist in an increase of network connectivity caused by the pressure-induced appearance of coordination defects.     

Atomic mixing of Ni2O3/SiO2, NiO/SiO2, and Ni/SiO2 interfaces induced by swift heavy ion irradiation

We have investigated the interface mixing of Ni₂O₃/SiO₂, NiO/SiO₂, and Ni/SiO₂ induced by the irradiation with Ar, Kr and Xe ions of energies ranging from 90 MeV to 260 MeV. Since these energies are in the electronic stopping regime, atomic transport processes will not be directly initiated by elastic ion–target collisions, but need to be excited by secondary processes like electron–phonon coupling or Coulomb explosion. Nevertheless, we have observed a strong mixing effect in the ceramic systems if the electronic energy loss exceeds a certain threshold value. Estimation of an effective diffusion constant indicates that diffusion takes place in the molten ion track. In contrast to the ceramics, the metallic Ni layer is still insensitive even for the highest electronic stopping power used (S_e=28 keV/nm) and does not exhibit mixing with its SiO₂ substrate. In addition, NiO/SiO₂ and Ni/SiO₂ were irradiated in the nuclear stopping regime with 600 keV Kr and 900 keV Xe–ions. Here the intermixing effect is in good agreement with the assumption of ballistic atomic transport. Received: 5 February 2002 / Accepted: 11 February 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +49-711/685-3866, E-mail: bolse@ifs.physik.uni-stuttgart.de