Magnetic susceptibility, electrical resistivity and thermal expansion coefficient of NiAs-type V1−xCrxSe

V_1−xCr_xSe(0.05x0.83) shows a temperature dependence of the magnetic susceptibility χ which is similar to that of CrSe. At small x, the magnetic transition temperature T_t(x) and the Weiss constant θ_p(x) decrease with decreasing x, while the effective number of Bohr magnetons per Cr (P_eff) significantly increases.     

Crystal structure, electrical and magnetic properties of La1 − xSrxCoO3 − y

The crystal structure and properties of La_{1 − x}Sr_xCoO_{3 − y} with strontium contents ranging from x = 0.1 to x = 0.7 have been studied. The lattice parameters were measured as a function of temperature (4.2–400 K) and the crystal structure was found to change from rhombohedral (at low temperatures and values of x) to cubic. While LaCoO₃ is paramagnetic the oxides in the composition range 0.2 < x < 0.6 are soft ferromagnets. The strontium additions are compensated by the formation of Co⁴⁺ (cobalt ions with one positive effective charge, Co_Co^.) and oxygen vacancies (V_o^..). From the results it is concluded that the relative importance of oxygen vacancies increases with increasing temperature and decreasing oxygen activity. As a result the concentration of electronic charge carriers — and the resultant electrical conductivity — decrease with increasing temperature. The defect structure is discussed and it is concluded that defect associations — probably between oxygen vacancies and strontium ions — and formation of microdomains of perovskite-related phases are important aspects of the overall structure of these perovskite phases.     

Magnetic properties of the pyrite type FexCo1−x−yNiyS2 system

The magnetic phase diagram of the Fe_xCo_1−x−yNi_yS₂ system was determined. Ferromagnetic (F)-, antiferromagnetic (AF )- and paramagnetic (P) phases were found. In the triangular diagram, the F-phase appears along the CoS₂-FeS₂ line, the AF-phase around NiS₂ and the P-phase between the F- and AF-phases. Discussions are given on the F-phase.     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

Energy band gaps for the GaxIn1−xAsyP1−y alloys lattice matched to different substrates

A pseudopotential formalism within the virtual crystal approximation in which the effects of composition disorder are involved is applied to the Ga_xIn_1−xAs_yP_1−y quaternary alloys in conditions of lattice matching to GaAs, InP and ZnSe substrates so as to predict their energy band gaps. Very good agreement is obtained between the calculated values and the available experimental data for the alloy lattice matched to InP and GaAs. The alloy is found to be a direct-gap semiconductor for all y compositions whatever the lattice matching to the substrates of interest. The (Γ→Γ) band-gap ranges and the ionicity character are found to depend considerably on the particular lattice-matched substrates suggesting therefore that, for an appropriate choice of y and the substrate, Ga_xIn_1−xAs_yP_1−y could provide more diverse opportunities to obtain desired band gaps, which opens up the possibility of discovering new electronic devices with special features and properties.     

Surface chemistry and microstructural analysis of CexZr1−xO2−y model catalyst surfaces

Cerium-zirconium mixed metal oxides are widely used as promoters in automotive emissions control catalyst systems (three-way catalysts). The addition of zirconium in the cubic lattice of ceria improves the redox properties and the thermal stability, thereby increasing the catalyst efficiency and longevity. The surface composition and availability of surface oxygen of model ceria-zirconia catalyst promoters was considered to develop a reference for future catalytic reactivity studies. The microstructure was characterized with X-ray diffraction (XRD) to determine the effect of zirconium substitution on crystalline structure and grain size. Additionally, the Ce/Zr surface atomic ratio and existence of Ce³⁺ defect sites were examined with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) for samples with different zirconium concentrations. The surface composition of the model systems with respect to cerium and zirconium concentration is representative of the bulk, indicating no appreciable surface species segregation during model catalyst preparation or exposure to ultrahigh vacuum conditions and analysis techniques. Additionally, the concentration of Ce³⁺ defect sites was constant and independent of composition. The quantity of surface oxygen was unaffected by electron bombardment or prolonged exposure to ultrahigh vacuum conditions. Additionally, XRD analysis did not indicate the presence of additional crystalline phases beyond the cubic structure for compositions from 100 to 25 at.% cerium, although additional phases may be present in undetectable quantities. This analysis is an important initial step for determining surface reactions and pathways for the development of efficient and sulfur-tolerant automotive emissions control catalysts.     

Quantum critical point, scaling and universality in high Tc(CaxLa1−x)(Ba2−c−xLac+x)Cu3Oy

Using charge transport in sintered ceramic samples it is observed that at all doping, including non superconducting overdoped samples, there exists a temperature in which below it dR/dT < 0. This suggests that either the quantum critical point is not necessarily inside the superconducting dome or that the CuO₂ plane is never overdoped. Data relating experimental Cooper pair density, conductivity and T_c suggest that Homes’ relation might need a more specific definition of the conductivity σ.     

Structural and vibrational properties of dilute GaNxAs1−x(P1−x)

We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs_1−xN_x,[GaP_1−xN_x] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {N_As[N_P]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data.     

Magnetic properties of the Cr3S4−xTex

It was found that a transition from the antiferromagnetic state to the ferromagnetic state took place at about x = 1.6 and that a monoclinic phase exists between x = 3.0 and 4.0 and a monoclinic structure became a hexagonal structure at about x = 3.5.     

Magnetic properties of Gd2(Fe1−x−yCoyTix)17

Serial single-phase Gd₂(Fe_1−x−yCo_yTi_x)₁₇ compounds have been synthesized. These compounds have a crystal structure belonging to rhombohedral lattice with space group. The lattice parameters of compounds decrease with cobalt content and increase with titanium content, respectively. The saturation magnetization decreases with increasing cobalt and titanium contents. The anisotropy fields increase to maximum then decrease with cobalt concentration. The magnetocrystalline anisotropy constants increase with cobalt content from negative to positive maximum and then decrease with Co concentration. The saturation moment of the compounds decreases linearly with cobalt concentration and decreases nonlinearly with titanium concentration.     

Direct comparison of the magnetic properties of ordered and disordered Fe3−xPt1+x alloys at low temperatures

The effect of atomic order on the magnetic moment and high field susceptibility of the Fe-Pt system has been investigated. The atomic moment varies linearly with composition and the influence of the atomic ordering is quite weak at low temperatures. By contrast, the high field susceptibility is larger for the order state and shows a minimum at 30 at% Pt.     

Influence of Nd substitution on the superconducting properties of ceramics in the 2212 system Bi2−wPbwSr2−xCa1−yNdx+yCu2O8+z

In the system Bi_2−wPb_wSr_2−xCa_1−yNd_x+yCu₂O_8+z different fractions of Nd are substituted on either Sr of Ca sites in order to introduce intrinsic insulating pinning centres. It is shown that a Nd concentration around x or y = 0.2 is likewise favourable with an average Nd---Nd distance in the range of the coherence length in the a, b-plane. However, clear evidence of flux pinning is only present for charge compensation with Pb²⁺. A simultaneous substitution of the Bi-based 2212 superconductor with moderate amounts of Nd³⁺ and Pb²⁺ improves the superconducting properties by strengthening the flux pinning forces.     

Nax/2Bi1−x/2MoxV1−xO4 and Bi1−x/3MoxV1−xO4 New Scheelite-related phases

New Scheelite-related solid solutions of the compositions Na_x/2Bi_1−x/2Mo_xV_1−xO₄ (0≤x≤1) and Bi_1−x/3 Mo_xV_1−xO₄(0≤x≤0.2) have been synthesised by the substitution of Na and Mo at the A and B sites respectively of the ABO₄ type ferroelastic BiVO₄. The phases were characterised using chemical analysis, powder X-ray diffraction, scanning electron microscopy, EDAX, and Raman spectroscopy. While almost a continuous solid solution is obtained for the series Na_x/2Bi_1−x/2Mo_xV_1−xO₄, the absence of Na at the A-site results only in a narrow stability region for the other series, Bi_1−x/3 Mo_xV_1−xO₄ where 0≤x≤0.2. Raman spectra of selected samples at room temperature also suggest that vanadium and molybdenum atoms are disordered at the tetrahedral sites.     

The structural features of Cu1−xPbx liquid alloys

Structure of Cu_1−xPb_x (x=0, 0.025, 0.05, 0.075, 0.1, 0.125) molten alloys has been studied by means of X-ray diffraction method. Structural parameters obtained from structure factors (SF) and radial distribution functions were analyzed. Partial structure factors were calculated by using Reverse Monte-Carlo method. It is shown that tendency to preferred interaction of atoms of the same kind grows with increasing of lead content.     

Electrochemical behaviour of (La1 − xSrx)sCo1 − yNiyO3 − δ as porous SOFC cathodes

This paper shows that storage at room temperature and ambient atmosphere appears to affect the polarisation resistance significantly and R_P decreased initially with storage time. This improvement was more pronounced when stored in moisturised air. The performance was, however, also found to decrease when stored for sufficiently long periods. The absolute values of the electrode response of these materials are very difficult to reproduce and the performance appears to be largely dependent on the manufacturing process of the powder or the electrode itself. In spite of this, the electrode behaviours exhibited similar patterns with respect to the dependence on T and P_O2. An increase in polarisation resistance with time at SOFC operating conditions was observed, which was related exclusively to the electrode reaction kinetics and not to oxygen concentration polarisation. It was also found to be higher when measured in moisturised air.     

Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes

Indium aluminium antimonide (In_1−xAl_xSb) and cadmium mercury telluride (Cd_xHg_1−xTe) heterostructure diodes, which comprise a near intrinsic active region bounded by more highly doped contact regions, exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature. In reverse bias, the carrier densities in the near intrinsic region are reduced below their equilibrium values by the effects of exclusion and extraction. In consequence, the radiative recombination is reduced and the devices emit less infrared radiation than the thermal equilibrium value. The observed intensity of the negative luminescence is in general agreement with expected values.     

Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Magnetic properties of pseudobinary compounds CrSb1−xAsx

Magnetic susceptibility and crystal structure were studied on CrSb_1−xAs_0.6, structural transformation occurs between MnP-type and NiAs-type at 270 K, the Néel temperature is 300 K. Paramagnetic moments of the system are 2.45−2.7μ_B/Cr, considerably larger than antiferromagnetic moments.     

Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted Al_xGa_1−xN with different AlN contents (in the range 0≤x≤0.2) and from implanted In_xAl_1−xN with different InN contents (x=0.13 and 0.19) close to the lattice match with GaN. The Tm³⁺ emission spectrum depends critically on the host material. The blue emission from Al_xGa_1−xN:Tm peaks in intensity for an AlN content of x0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 C. The blue emission from In_0.13Al_0.87N:Tm, annealed at 1200 C, is more than ten times stronger than that from Al_xGa_1−xN:Tm, x≤0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.