Hall and transverse even effects in the vicinity of a quantum critical point in Tm1 ? x Yb x B12

The angular, temperature, and magnetic field dependences of the resistance recorded in the Hall effect geometry are studied for the rare-earth dodecaboride Tm_{1 ? x} Yb _x B₁₂ solid solutions where the metal-insulator and antiferromagnetic-paramagnetic phase transitions are observed in the vicinity of the quantum critical point x _c ?? 0.3. The measurements performed on high-quality single crystals in the temperature range 1.9?C300 K for the first time have revealed the appearance of the second harmonic contribution, a transverse even effect in these fcc compounds near the quantum critical point. This contribution a is found to increase drastically both under the Tm-to-ytterbium substitution in the range x > x _c and with an increase in the external magnetic field. Moreover, as the Yb concentration x increases, a negative peak of a significant amplitude appears on the temperature dependences of the Hall coefficient R _H(T) for the Tm^{1 ? x} Yb _x B₁₂ compounds, in contrast to the invariable behavior R _H(T) ?? const found for TmB₁₂. The complicated activation-type behavior of the Hall coefficient is observed at intermediate temperatures for x ?? 0.5 with activation energies E _g /k _B ?? 200 K and E _a/k _B = 55?C75 K, and the sign inversion of R _H(T) is detected at liquid-helium temperatures in the coherent regime. Renormalization effects in the electron density of states induced by variation of the Yb concentration are analyzed. The anomalies of the charge transport in Tm_{1 ? x} Yb _x B₁₂ solid solutions in various regimes (charge gap formation, intra-gap many-body resonance, and coherent regime) are discussed in detail and the results are interpreted in terms of the electron phase separation effects in combination with the formation of nanosize clusters of rare earth ions in the cage-glass state of the studied dodecaborides. The data obtained allow concluding that the emergence of Yb-Yb dimers in the Tm_{1 ? x} Yb _x B₁₂ cage-glass matrix is the origin of the metal-insulator transition observed in the achetypal strongly correlated electron system of YbB₁₂.     

单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性

研究了双子带占据的In_0.52Al_0.48As/In_0.53Ga_{0 .47}As单量子阱中磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，获得了不 同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度(B＜1.5T)下由迁移率谱和 多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d ²ρ/dB²-1/B的快速傅里叶变换 关键词： InAlAs/InGaAs单量子阱 SdH振荡 二维电子气 磁致子带间散射     

Mobility enhancement in MBE-grown InxGa1−xAs/In0.52Al0.48As modulation-doped heterostructures

Pseudomorphic In_xGa_1−xAs/In_0.52Al_0.48As modulation-doped heterostructures were grown by molecular beam epitaxy (MBE) on InP (100) substrates over a range of indium compositions fromx=0.53 to 0.75. Low temperature photoluminescence (PL) measurements show a prominent reduction in the InGaAs linewidth due to the quantum-size effect as the indium composition is increased from its lattice-matched value of 0.53. The lowest linewidth of 6.8 meV was achieved at an indium composition of 0.65, above which an increase in the linewidth was observed due to the overwhelming effects of interfacial strain. The Hall mobilities at 300 K and 77 K increase in correspondence to the PL linewidth reduction as the indium composition is increased. Although initial signs of mobility saturation can be seen at an indium composition of 0.65, the peak mobility at 77 K of 8.9×10⁴cm²V s⁻¹was achieved at an indium composition of 0.70. There is experimental evidence to indicate that the mobility enhancement at increasing indium composition is due to an effect of a reduction in the alloy scattering and in the effective mass of the carriers. It was found that the insertion of an additional In_0.53Ga_0.47As interface smoothing layer between the strained InGaAs channel and the In_0.52Al_0.48As spacer layer did not have a significant effect on the mobility enhancement in the heterostructures.     

Electron mobility and electron scattering in CdxHg1−xSe mixed crystals

We report a detailed study, both experimental and theoretical, of electron mobility and Hall coefficient in small-gap Cd_xHg_1?xSe mixed crystals. The electron mobility is calculated by the variational technique. The results obtained with no adjustable parameter are within 15% of the experimental values in the range of temperature 4.2–300 K, electron concentrations 7 × 10¹⁶?5 × 10¹⁸cm^?3 and composition 0 < x ? 0.25.The scattering of electrons by charged centres, optical phonons (polar and nonpolar interaction), acoustic phonons as well as disorder (alloy) scattering is taken into account. It is shown that the composition-dependent dielectric function and the band edge symmetry play an important role in the explanation of the experimental results.     

Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0<x<0.5)

Modulation doped Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy. Initially the critical layer thickness for InAs mole fractions up to 0.5 was investigated. For InAs mole fractions up to 0.35 good agreement with theoretical considerations was observed. For higher InAs mole fractions disagreement occurred due to a strong decrease of the critical layer thickness. The carrier concentration for Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with a constant In _x Ga_1–x As quantum well width was investigated as a function of InAs mole fraction. If the In _x Ga_1–x As quantum well width is grown at the critical layer thickness the maximum carrier concentration is obtained for an InAs mole fraction of 0.37. A considerable higher carrier concentration in comparison to single-sided -doped structures was obtained for the structures with -doping on both sides of the In _x Ga_1–x As quantum well. Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with InAs mole fractions in the range 0–0.35 were fabricated for device application. For the presented field effect transistors best device performance was obtained for InAs mole fractions in the range 0.25–0.3. For the field effect transistors with an InAs mole fraction of 0.25 and a gate length of 0.15 m a f _T of 115 GHz was measured.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures

We analyze the strain induced changes in the low temperature multisubband electron mobility mediated through the intersubband interactions in a pseudomorphic GaAs/In_xGa_1−xAs coupled double quantum well structure. We consider the non-phonon scattering mechanisms and study the effect of strain on them. We show that strain reduces the mobility due to ionized impurity (imp-) scattering μ^imp but enhances the mobility due to interface roughness (IR-) scattering μ^IR. For alloy disorder (AL-) scattering as long as the lowest subband is occupied, the effect of strain enhances the mobility μ^AL. However, once the second subband is occupied, there is almost no change, rather decrease in μ^AL for larger well widths. It is gratifying to note that for single subband occupancy, the effect of strain enhances the total mobility μ. On the other hand, for double subband occupancy, initially there is almost no change, but with increase in well width the total mobility reduces. We vary the In composition x from 0.15 to 0.2 and 0.25 and the barrier width between the two wells to analyze their effects on the mobility which shows interesting results. Our study of multisubband mobility can be utilized for the low temperature device applications.     

Disorder and the fractional quantum Hall effect

The fractional quantum Hall effect is studied in the 2D electron gas of four GaAs-Al_xGa_1?xAs heterostructures. Localization due to disorder, known to give rise to the wide integral quantum Hall plateaus, is demonstrated to inhibit the fractional effect, which is observed only in the higher mobility samples.     

Scattering parameters from an analysis of the hall electron mobility in Ga1−xAlxAs alloys

Hall mobilities in high purity epitaxial layers of n-type Ga_1?xA_xAs alloys with room-temperature electron concentrations in the range (5–10) × 10¹⁵ cm^?3 have been measured at 300 K for alloy compositions in the range 0? x ? 0.78. Models for the variation of various material parameters with composition are developed. The acoustic deformation potentials for the Π and X conduction band minima, the intervalley coupling constants for electron scattering among the X-X and L-X minima and the longitudinal optical phonon temperature for these scatterings and the polar optical scattering in the X minima have been determined from a theoretical fit to the experimental data. The electron mobilities in the Π, L and X minima are found to decrease with the composition in the range 0≦ x ? 0.45, show a minimum at x ? 0.50 and then increase again with composition. These mobility variations are reflected in the minimum in the Hall mobility at x ? 0.5 due to intense non-equivalent electron scattering involving the L and x minima. The minimum in the electron mobilities in the Π and X minima have been identified to occur mainly due to the space charge and intervalley scattering among the L and X minima, respectively. The number of equivalent x minima in Ga_1?x Al_x As alloys are estimated to be three and are, thus, situated at the zone edge.     

双δ掺杂In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In_0.65Ga_0.35As/In_0.52Al_0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，通过对纵向磁电阻SdH振荡的快速傅里叶变换分析，获得了各子带电子的浓度，并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程，自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明，势垒层的掺杂电子几乎全部转移到了量子阱中，转移率在95%以上. 关键词： SdH振荡 二维电子气 FFT分析 自洽计算     

Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100)

Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr_2?xIn_xSe₄(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l0⁶A/m. The conductivity decreases rapidly near the Curie temperatureT_c (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near T_c. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10^?2 m²/V · s at 6.3 K, and decreases rapidly near T_c with the rise in temperature. Then it increases slowly from 5.5 × 10^?4 m²/V · s at 160 K to 7.5 × 10^?4 m²/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.     

Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures

The paper presents the photoluminescence (PL) study of InAs quantum dots (QDs) embedded in the asymmetric GaAs/In_xGa_1?xAs/In_0.15Ga_0.85As/GaAs quantum wells (QWs) with the different compositions of capping In_xGa_1?xAs layers. The composition of the buffer In_0.15Ga_0.85As layer was the same in all studied QD structures, but the In content (parameter x) in the capping In_xGa_1?xAs layers varied within the range 0.10–0.25. The In concentration (x) increase in the In_xGa_1?xAs capping layers is accompanied by the variation non-monotonously of InAs QD emission: PL intensity and peak positions. To understand the reasons of PL variation, the PL temperature dependences and X ray diffraction (XRD) have been investigated. It was revealed that the level of elastic deformation (elastic strain) and the Ga/In interdiffusion at the In_xGa_1?xAs/InAs QD interface are characterized by the non-monotonous dependences versus parameter x. The physical reasons for the non-monotonous variation of the elastic strains and PL parameters in studied QD structures have been discussed.     

Ferromagnetic transition in GaAs/Mn/GaAs/In x Ga1 − x As/GaAs structures with a two-dimensional hole gas

The transport properties of GaAs/Mn/GaAs/In _x Ga_{1 ? x} As/GaAs structures with a layer that is separated from the quantum well and contains Mn impurities in the concentration range 4–10 at % corresponding to the reentrant metal-insulator transition observed in the bulk GaMnAs material [17] have been investigated. The hole mobility in the objects under investigation is more than two orders of magnitude higher than the known values for the GaMnAs semiconductor and GaMnAs-based magnetic heterostructures. This makes it possible to observe Shubnikov-de Haas oscillations, which confirm a two-dimensional character of the hole energy spectrum. The calculated Curie temperature for heterostructures with indirect exchange interaction through a two-dimensional hole channel is in good agreement with the position of the maximum (at 25–40 K) in the temperature dependences of the electrical resistance of the channel. This suggests that two-dimensional holes play an important role in ferromagnetic ordering of the Mn layer under these conditions. The observations of a negative spin-dependent magnetoresistance and an anomalous Hall effect, whose magnitude correlates well with the results of theoretical calculations for two-dimensional ferromagnetic systems based on III-Mn-V, also indicate a significant role of the two-dimensional channel in ferromagnetic ordering.     

Significance of Hall measurements in Ga1−xAlxAs alloys at 300 K

The Hall mobility, electron concentration and resistivity have been measured as a function of alloy composition for Ga_1?x Al _x As alloys at 300 K. The data have been explained on the multiconduction band structure of the alloys. The alloy composition for the direct-indirect conduction band minima cross-over, the electron mobility in theX minima and the activation energy of the deep level below these minima have been determined.     

Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass,quantum and transport mobilities of 2D electrons

Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to investigate the electronic transport properties of lattice-matched In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctions. The spacer layer thickness (t_S) in modulation-doped samples was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are already occupied for all samples except for that witht_S =  400 Å. The carrier density in each subband, Fermi energy and subband separation have been determined from the periods of the SdH oscillations. The in-plane effective mass (m ^* ) and the quantum lifetime (τ_q) of 2D electrons in each subband have been obtained from the temperature and magnetic field dependences of the amplitude of SdH oscillations, respectively. The 2D carrier density (N₁) in the first subband decreases rapidly with increasing spacer thickness, while that (N₂) in the second subband, which is much smaller thanN₁ , decreases slightly with increasing spacer thickness from 0 to 200 Å. The in-plane effective mass of 2D electrons is similar to that of electrons in bulk In_0.53Ga_0.47As and show no dependence on spacer thickness. The quantum mobility of 2D electrons is essentially independent of the thickness of the spacer layer in the range between 0 and 200 Å. It is, however, markedly higher for the samples with a 400 Å thick spacer layer. The quantum mobility of 2D electrons is substantially smaller than the transport mobility which is obtained from the Hall effect measurements at low magnetic fields. The transport mobility of 2D electrons in the first subband is substantially higher than that of electrons in the second subband for all samples with double subband occupancy. The results obtained for transport-to-quantum lifetime ratios suggest that the scattering of electrons in the first subband is, on average, forward displaced in momentum space, while the electrons in the second subband undergo mainly large-angle scattering.     

New experimental results for electron transport in weak accumulation layers of ZnO crystals

Previous Hall measurements on (0001) and (0001&#x0304;) faces of ZnO have shown a Hall mobility oscillating as a function of Hall surface electron density in the range between N_SH=10⁶ and 10¹¹ cm^?2. Here we report on new results obtained by a field effect arrangement for free surfaces in UHV. With donors from H exposure or by illumination weak accumulation layers (n_sh <10¹¹ cm^?2) are established. The field effect shows oscillations in surface conductivity as a function of gate voltage. Also the combination of a field effect with a Hall effect measurement reveals discrete values of Hall surface electron density n_sh. Various pretreatments do not change the periodicity of these oscillations. Necessary preconditions are a temperature below 130 K, a Hall surface electron density below 3 × 10¹² cm^?2 and a source-drain field of a few V/cm. A model regarding impurity levels in the space charge layer relates the results of the field effect measurements to the results of the Hall effect measurements.     

Electronic parameters and electronic structures in modulation-doped highly strained InxGa1−xAs/InyAl1−yAs coupled double quantum wells

Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained In_xGa_1−xAs/In_yAl_1−yAs coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicity effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.     

Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells

We have performed magneto-transport experiments in modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) measurements have been performed in the temperatures between 1.8 and 275 K, while quantum Hall effect measurements in the temperatures between 1.8 and 47 K and magnetic fields up to 11 T.The variations of Hall mobility and Hall carrier density with nitrogen mole fractions and temperature have been obtained from the classical magnetotransport measurements. The results are used to investigate the scattering mechanisms of electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. It is shown that the alloy disorder scattering is the major scattering mechanism at investigated temperatures.The quantum oscillations in Hall resistance have been used to determine the carrier density, effective mass, transport mobility, quantum mobility and Fermi energy of two-dimensional (2D) electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. The carrier density, in-plane effective mass and Fermi energy of the 2D electrons increases when the nitrogen mole fraction is increased from y=0.004 to 0.015. The results found for these parameters are in good agreement with those determined from the Shubnikov-de Haas effect in magnetoresistance.     

Electron mobilities in isomorphic In0.53Ga0.47As quantum wells on InP substrates

The influence of the doping level, illumination, and width of isomorphic In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wells grown on InP substrates on the electron mobility is studied. The persistent photoconductivity at low temperatures is found. Band diagrams are calculated and optimal parameters are found for obtaining the maximum electron mobility. The quantum and transport electron mobilities in dimensional quantization subbands are obtained from the Shubnikov-de Haas effect. The electron mobilities are calculated in dimensional quantization subbands upon scattering by ionized impurities taking intersubband transitions into account. Scattering by ionized impurities in samples studied is shown to be dominant at low temperatures.     

Hall to drift mobility ratio in Ga1−xAlxAs alloys

Hall concentration measurements as a function of temperature ($\text{750 ? T ? 77}\text{K}$) on n-type epitaxial layers of Ga_1?xAl_xAs in the composition range $\text{0 ? x ? 0.78}$, have been used to evaluate the composite dependence of the Hall to drift mobility ratio in this alloy at 300 K. This ratio is found to be close to unity for alloy compositions $\text{0 ? x ? 0.25}$ and $\text{0.6 ? x ? 0.78}$, but attains a maximum value of 3.8 at x = 0.42 due to the multiconduction Hall effect.     

Band edge offsets in strained (InGa)As-(AlGa)As heterostructures

The excitonic transitions between the ground electron and hole quantum well sublevels in strained In_xGa_1-xAs-Al_yGa_1-yAs multiple quantum well structures (x = 0.12−0.35 and y = 0.2−0.35) have been investigated by means of photoluminescence and photoconductivity measurements. The molecular beam epitaxy grown structures contained an Al_yGa_1-yAs matrix with one unstrained GaAs and three strained In_xGa_1-xAs quantum wells one of which was in the GaAs cladding layers. The ratio of the conduction band edhe line up to the band gap offset for the strained In_xGa_1-xAs-unstrained Al_yGa_1-yAs interface has been found to be 0.67 ± 0.08 for the studied regions of x and y.