White light-emitting quantum dot diodes and tuning of luminescence processes

A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.     

Surface plasmons for enhanced silicon light-emitting diodes and solar cells

Localized surface plasmons on metallic nanoparticles can be surprisingly efficient at coupling light into or out of a silicon waveguide. In this paper we review our recent work where we have demonstrated a factor of 8 times enhancement in the electroluminescence from a silicon-on-insulator light-emitting diode at 900 nm using silver nanoparticles, in the first report of a surface plasmon-enhanced silicon light-emitting diode. Our theoretical work has shown that the enhancement seen in this system at long wavelengths is mainly a single-particle effect, in contrast to previous suggestions that it is a waveguide-mediated multi-particle effect, and that there is a dramatic enhancement of the scattering cross-section for waveguided light in these devices. We discuss the route towards increasing this enhancement further and provide predictions of the limits on the maximum potential efficiency enhancement, as well as the potential of metal particles for applications in thin film silicon solar cells.     

Influence of capacitance effect on alternating-current organic light-emitting diodes

The capacitance effect on ITO/poly[2-methoxy-5-[(2′-ethylhexyl)oxy]-p-phenylenevinylene] (MEH-PPV)/Al is studied by impedance spectroscopy technology, and the electroluminescence (EL) mechanism of this device driven by a sinusoidal alternating-current (AC) bias is suggested. By calculating the RC time constant of the device, we find that it is in good agreement with the lag-time between the EL and applied AC bias. Also, the influence of operating frequency on the EL intensity of the device is presented and it is concluded that a low operating frequency is good for a high device performance.     

量子阱结构对有机电致发光器件效率的影响

实验中共制备了五种有机量子阱结构电致发光器件,分别对这五种量子阱结构器件的电致发光特性进行了研究,分析了量子阱结构的周期数和势垒层的厚度对器件电学性能的影响.实验结果表明适当周期数的量子阱结构器件的亮度和电流效率比传统的三层结构器件的要大,主要原因是量子阱结构对电子和空穴的限制作用,这种限制作用提高了电子和空穴在发光层中形成激子和复合的概率,从而提高了发光的亮度和效率.当改变阱结构器件中势阱层的厚度时,也会对器件的亮度和效率产生影响,采用适当的势阱层厚度能够提高器件的亮度和效率. 关键词： 量子阱结构 电致发光 电流效率 光谱     

Comprehension of the effects of gamma ray on luminescence intensity of GaN-based light-emitting diodes with multi-quantum well

Wavelength dependent luminescence intensity is crucial relationship in determining the physical property of light-emitting diodes (LED). The first object of this work is to search for the applicable method of using wavelength to predict the normalization luminescence intensity, I/I _0max, launched from GaN-based LED with multi-quantum well before and after irradiation with ??-ray. Predicated on the principle of nonlinear curve fitting, a typical numerical method is highlighted because the wavelength-dependent luminescence intensity of the LED irradiated by ?? with different dose are quantitative analyzed by this method. The simulations agree very well with the observed spectroscopy of 5 curves for intensity versus wavelength. The minimum value of correlation coefficients between actual and calculated data is 0.993, and the maximum average relative error is 7.93%. Another object of this work is to find the relationship between radiation dose and key parameter of function described above in mathematics method. In the light of the calculated results, the influence of ?? on key parameter is explained successfully. The terminal benefit is that the normalization luminescence intensity, I/I _0max launched from GaN-based LED as a function of both wavelength and radiation dose is given in this paper.     

Influence of organic capping layers on the performance of transparent organic light-emitting diodes

We investigate a set of transparent organic LEDs (TOLEDs) with different organic capping layer (OC) thicknesses to understand the capping layer effect. We find that thickness variation of the OC strongly influences the emission properties of TOLEDs and exhibits different trends for top or bottom emission. The external quantum efficiency for the top side can be enhanced by a factor of 63%, but that of the bottom side only by 4% compared to a reference device without an OC. Additionally, we demonstrate that the introduction of the OC is an effective method to control the bottom-to-top emission ratio within a measured range from 2.87 to 6.05.     

Synthesis and luminescence properties of a broad-band red phosphor Ca3Si2O7:Eu2+ for warm white light-emitting diodes

Single-phase broad-band red-emitting Ca₃Si₂O₇:Eu²⁺ phosphors, with photoluminescence features that qualify them as candidates for white light-emitting diodes applications, were successfully synthesized via a modified solid-state reaction method that employed H₃BO₃ as a flux. The phosphors produced have an intense broad red emission band, with a peak at 603 nm, a full width at half maximum of 110 nm, and color coordinates of (0.550, 0.438). Concentration quenching occurred at 0.01 mol Eu²⁺. The discussion of the results shows that Eu²⁺ ions should be accommodated at the Ca-sites of the lattice, dipole–dipole interactions should predominantly govern the energy transfer mechanism among them, and the critical distance between them is ～31 Å.     

界面空间电荷对双层有机电致发光器件效率的影响

本文建立了双层有机电致发光器件中载流子在有机/有机界面复合的无序跳跃理论模型.计算表明:①内界面处电子和空穴的有效势垒高义决定OLEDs中的电子和空穴密度的分布,而电子与空穴密度又决定了电场强度的大小;且复合效率随着有效势垒高度的增加而增加;②当电压较低时,复合效率随载流子有效跳跃距离的增加而增加;当电压较高时,复合效率随载流子的有效跳跃距离的增加而减少;③当界面场强差较小时,有机层界面场强突变增大,复合效率增大,当界面场强差达临界值时,复合效率反而随着界面场强差的增大而减小.该理论模型可较好地解释相关的实验现象.     

硅衬底垂直结构InGaAlN多量子阱发光二极管电致发光谱的干涉现象研究

测试了硅衬底垂直结构芯片在不同空间角度上的电致发光(EL)谱.指出硅衬底垂直结构InGaAlN多量子阱发光二极管的EL谱中多个峰型来源于干涉现象,而不是来自于多个阱层的发光.干涉峰的疏密反映p型层厚度的一致性,干涉现象的强弱反映p型欧姆接触层反光能力的强弱.芯片法线方向附近发光最强干涉现象最明显,芯片侧边的发光几乎没有干涉现象且发光强度最弱. 关键词： InGaAlN 发光二极管 垂直结构 电致发光     

Influence of heterojunction interface on exciplex emission from organic light-emitting diodes under electric fields

In this paper, electroluminescence from organic light-emitting diodes based on 2-(4^′-biphenyl)-5-(4^′′-tert-butylphenyl)-1,3,4-oxadiazole (PBD) and N,N^′-diphenyl-N,N^′-bis(3-methylphenyl)-(1,1^′-biphenyl)-4,4^′-diamine (TPD) is reported. Based on the exciplex emission from the TPD/PBD interface under high electric fields, the influence of the TPD/PBD interface on exciplex emission was investigated by increasing the number of TPD/PBD interfaces while keeping both the total thickness of the TPD layer and the PBD layer constant in the multiple quantum-wells (MQW) device ITO/TPD/[PBD/TPD]_n/PBD/Al (n is the well number that was varied from 0 to 3). Our experimental data shows that exciplex emission can be enhanced by suitably increasing the well number of this kind of MQW-like device. PACS 78.60.Fi; 78.55.Kz; 73.61.Ph     

Al高掺杂浓度对ZnO禁带和吸收光谱影响的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 建立了未掺杂与不同浓度的Al原子取代Zn原子的两种Zn_1-xAl_xO超胞模型,分别对模型进行了几何结构优化、态密度分布和能带分布的计算. 结果表明: ZnO高掺杂Al的条件下, 掺杂的Al原子浓度越大,间隙带越窄, 蓝移越弱. 计算结果和实验结果相一致.     

Mn高掺杂浓度对ZnO禁带宽度和吸收光谱影响的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 建立了未掺杂与不同浓度的Mn原子取代Zn原子的三种Zn_1-xMn_xO超胞模型, 分别对模型进行了几何结构优化、态密度分布、能带分布和吸收光谱的计算. 结果表明: 电子非自旋极化处理的条件下, Mn掺杂浓度越小, ZnO形成能越小, 掺杂越容易, 晶体结构越稳定; Mn的掺入使得ZnO体系的杂质能带和导带发生简并化, 并且导带底和价带底同时向低能方向移动, 掺杂后的导带比价带下降得少导致禁带宽度变宽, ZnO吸收光谱明显出现蓝移现象, 计算结果和实验结果相一致. 同时, 电子自旋极化处理的条件下, 体系有磁性, 吸收光谱发生红移现象. 计算结果与相关实验结果相符合.     

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes

The novel AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) with double superlattice structure(DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-period Mg modulation-doped p-AlGaN/u-GaN superlattice(SL) and 4-period p-AlGaN/p-GaN SL electron blocking layer, which are used to replace the p-type GaN layer and electron blocking layer of conventional UV-LEDs, respectively. Due to the special effects and interfacial stress, the AlGaN/GaN short-period superlattice can reduce the acceptor ionization energy of the ptype regions, thereby increasing the hole concentration. Meanwhile, the multi-barrier electron blocking layers are effective in suppressing electron leakage and improving hole injection. Experimental results show that the enhancements of 22.5%and 37.9% in the output power and external quantum efficiency at 120 m A appear in the device with double superlattice structure.     

Influence of the energy spectrum of structural defects on the degradation rate in AlGaAs light-emitting heterodiodes

The energy spectrum of deep levels in the depleted region of the p-n-transition of AlGaAs light-emitting heterodiodes has been investigated by the method of tunneling spectroscopy. It is shown that the rate of change of the forward current, characterizing the intensity of degradation processes in light-emitting diodes, is interrelated with electronic states of structural defects in the space-charge region (SCR) of the p-n-transition. The maximum value of this parameter is determined by the presence of donor complexes with ionization energies of 0.99 and 1.1 eV in the SCR of the p-n-transition. Institute of Electronics, National Academy of Sciences of Belarus, 22, Logoiskii Trakt, 220090, Minsk, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 298–302, March–April, 1998.     

Proposals for a standard for the safe use of light-emitting diodes, laser diodes, and optical fibre transmission systems

A new safety standard for light emitting diodes, laser diodes and fibre optical transmission systems is needed because of the difficulties in applying existing standards to these products. New proposals, generated by a BSI working group, include a new classification system which takes into account the inherent beam divergence of most of these products, and the need to classify at different locations within an extended optical system such as a fibre-optic link.