首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 10 毫秒
1.
Time-resolved carrier dynamics in single-wall carbon nanotubes is investigated by means of two-color pump-probe experiments. The recombination dynamics is monitored by probing the transient photobleaching observed on the interband transitions of the semiconducting tubes. This dynamics takes place on a 1 ps time scale which is 1 order of magnitude slower than in graphite. Transient photoinduced absorption is observed for nonresonant probing and is interpreted as a global redshift of the pi-plasmon resonance. We show that the opening of the band gap in semiconducting carbon nanotubes determines the nonlinear response dynamics over the whole visible and near-infrared spectrum.  相似文献   

2.
F in the nanotubes, indicating that metallic nanotubes are present in the sample. Received: 2 April 1998  相似文献   

3.
Exact diagonalization results are reported for the bright and dark exciton structure of semiconducting single-wall carbon nanotubes in the framework of the Hubbard model combined with a small crystal approach for several values of the correlation coupling strength U/t. Our findings, in the low-intermediate correlation regime (1.5 < U/t < 2.1), show the presence of dark states above and below the first bright exciton |B> and can account for reported experimental values of deep triplet states below |B> and of a K-momentum singlet dark exciton above this state. In order to fit the temporal profile of the photoluminescence (PL) decay, a bottleneck mechanism is considered involving a few dark states, with the respective energy gaps correspondingly obtained in the above-mentioned correlation range. We find that a kinetic model with one dark state above and two below |B> is able to recover the observed biexponential features of the PL behaviour with a reasonable set of parameters. Within this model we attribute the long tail of the PL to a delayed luminescence process of the bright state caused by the nearby calculated dark states.  相似文献   

4.
Elastic and inelastic neutron scattering are used to study the structure and dynamics of single-wall carbon nanotubes (SWNT) self-assembled into nanobundles (NBSWNT). Suspensions of NBSWNT are characterized by small-angle neutron scattering. Neutron diffraction is used as a useful tool to study the structure of both the SWNT and NBSWNT. Calculations on finite-size bundles are compared to the data in order to estimate the distribution of tube diameters. Finally, we present time of flight inelastic scattering measurements of the phonon density of states and discuss the main features of the spectra in comparison with calculations. Received: 9 June 1999 / Accepted: 3 August 1999 / Published online: 27 October 1999  相似文献   

5.
6.
7.
8.
Electronic structure of deformed carbon nanotubes varies widely depending on their chirality and deformation mode. We present a framework to analyze these variations by quantifying the dispersion relation and density of states. The theory is based on the Huckel tight-binding model and confirmed by four orbital tight-binding simulations of nanotubes under stretching, compression, torsion, and bending. It unriddles and unifies previous band gap studies and predicts the shifting, merging, and splitting of Van Hove singularities in the density of state, and the zigzag pattern of band gap change with strains. Possible applications to nanotube devices and spectroscopy research are also presented.  相似文献   

9.
Wavelength-dependent pump-probe spectroscopy of micelle-suspended single-walled carbon nanotubes reveals two-component dynamics. The slow component (5-20 ps), which has not been observed previously, is resonantly enhanced whenever the pump photon energy coincides with an absorption peak and we attribute it to interband carrier recombination, whereas we interpret the always-present fast component (0.3-1.2 ps) as intraband carrier relaxation in nonresonantly excited nanotubes. The slow component decreases drastically with decreasing pH (or increasing H+ doping), especially in large-diameter tubes. This can be explained as a consequence of the disappearance of absorption peaks at high doping due to the entrance of the Fermi energy into the valence band, i.e., a 1D manifestation of the Burstein-Moss effect.  相似文献   

10.
代新月  周毅  李洁  张力舒  赵珍阳  李辉 《中国物理 B》2017,26(8):87310-087310
Electronic transport properties of single-wall boron nanotube(BNT) with different chiralities, diameters, some of which are encapsulated with silicon, germanium, and boron nanowires are theoretically studied. The results indicate that the zigzag(3, 3) BNT has more electronic transmission channels than the armchair(5, 0) BNT because of its unique structure distortion. Nanowires encapsulated in the BNT can enhance the conductance of the BNT to some extent by providing a significant electronic transmission channel to the BNT. The effect of the structure of nanowires and the diameter of BNTs on the transport properties has also been discussed. The results of this paper can enrich the knowledge of the electron transport of the BNT and provide theoretical guidance for subsequent experimental study.  相似文献   

11.
C(59)N magnetic fullerenes were formed inside single-wall carbon nanotubes by vacuum annealing functionalized C(59)N molecules encapsulated inside the tubes. A hindered, anisotropic rotation of C(59)N was deduced from the temperature dependence of the electron spin resonance spectra near room temperature. Shortening of the spin-lattice relaxation time T(1) of C(59)N indicates a reversible charge transfer toward the host nanotubes above approximately 350 K. Bound C(59)N-C(60) heterodimers are formed at lower temperatures when C(60) is coencapsulated with the functionalized C(59)N. In the 10-300 K range, T(1) of the heterodimer shows a relaxation dominated by the conduction electrons on the nanotubes.  相似文献   

12.
For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5–7 defect. It is shown that the electronic states related to the contact region and the 5–7 defect lie in vicinity of the Fermi level.  相似文献   

13.
14.
When electron states in carbon nanotubes are characterized by two-dimensional wave vectors with the components K 1 and K 2 along the nanotube circumference and cylindrical axis, respectively, then two such vectors symmetric about a M-point in the reciprocal space of graphene are shown to be related by the time-reversal operation. To each carbon nanotube there correspond five relevant M-points with the following coordinates: K 1(1) = N/2R, K 2(1)= 0; K 1(2) = M/2R, K 2(2)= −π/T; K 1(3)= (2NM)/2R, K 2(3)= π/T; K 1(4)= (M + N)/2R, K 2(4)= -π/T, and K 1(5)= (NM)/2R, K 2(5)= π/T, where M and N are the integers relating the chiral, C h , symmetry, R, and translational, T, vectors of the nanotube by N R = C h + M T, T = |T|, and R is the nanotube radius. The states at the edges of the one-dimensional Brillouin zone, which are symmetric about the M-points with K 2 = ±π/T, are shown to be degenerate due to the time-reversal symmetry.  相似文献   

15.
A review of the electronic dipole transitions in graphite and single-wall carbon nanotubes is presented. Because of its singular electronic structure, the optical absorption matrix element as a function of wave vector has a node in the two-dimensional Brillouin zone of graphite, which depends linearly on the optical polarization direction. In the case of the single-wall carbon nanotubes, the dipole selection rule and the van Hove singularity in the joint density of states will give a characteristic behavior, which is observed by luminescence and resonance Raman spectroscopy. PACS 78.30.Na; 78.20.Bh; 78.66.Tr; 63.22.+m; 36.20.Kd; 36.20.Ng  相似文献   

16.
采用基于BrennerⅡ势的非平衡态分子动力学方法,模拟研究了300K温度下经氢化学修饰的(10,0)单壁碳纳米管的热导率.研究显示功能化后碳管的热导率有明显减小,当有一列碳原子被氢化后(功能化程度为5%),碳管的热导率减小了大约1/3,为了进一步解释这种功能化对碳纳米管热导率的影响,计算了不同功能化程度下碳纳米管的声子谱.  相似文献   

17.
利用非共振情况下的键极化模型理论,对单壁碳纳米管的拉曼光谱强度进行了研究.考察了碳纳米管结构、入射光和散射光的偏振方向以及管轴的取向对散射光强度的影响.计算结果表明,光的偏振方向对拉曼散射强度影响较大,而手性对拉曼光谱的影响较小.针对碳管样品的实际情况,给出了无规取向碳管的拉曼散射光谱. 关键词: 碳纳米管 拉曼散射 声子 键极化  相似文献   

18.
We have studied the resistance of single-wall carbon nanotubes measured in a four-point configuration with noninvasive voltage electrodes. The voltage drop is detected using multiwalled carbon nanotubes while the current is injected through nanofabricated Au electrodes. The resistance at room temperature is shown to be linear with the length as expected for a classical resistor. This changes at cryogenic temperature; the four-point resistance then depends on the resistance at the Au-tube interfaces and can even become negative due to quantum-interference effects.  相似文献   

19.
单壁碳纳米管中电子的有效质量   总被引:1,自引:0,他引:1       下载免费PDF全文
陆地  颜晓红  丁建文 《物理学报》2004,53(2):527-530
解析研究了单壁碳纳米管中电子的有效质量,以及导带底的电子有效质量与其管径和螺旋度的关系.结果表明,单壁碳纳米管的几何结构对其电子有效质量有重要的影响.特别是锯齿形窄隙半导体管,发现其导带底的电子有效质量与管径的平方成反比. 关键词: 单壁碳纳米管 电子有效质量  相似文献   

20.
A gel of single-wall carbon nanotubes in an ionic liquid has been prepared using the technique of mixing nanotubes with ionic liquids. The gel obtained has a high concentration of nanotubes (~1%). The absorption spectra of the gel and its individual components have been measured. The absorption spectrum of the gel exhibits reconstruction of the electronic and vibrational spectra of the gel with respect to its individual components. This reconstruction is explained by the interaction of nanotubes with the ionic liquid in the gel structure. Reconstruction of the electronic subsystem of nanotubes has also been observed in a suspension of nanotubes in an aqueous solution of a surfactant.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号