Effect of strain on geometric and electronic structures of graphene on Ru(0001) surface

The atomic and electronic structures of a graphene monolayer on a Ru(0001) surface under compressive strain are investigated by using first-principles calculations. Three models of graphene monolayers with different carbon periodicities due to the lattice mismatch are proposed in the presence and the absence of the Ru(0001) substrate separately. Considering the strain induced by the lattice mismatch, we optimize the atomic structures and investigate the electronic properties of the graphene. Our calculation results show that the graphene layers turn into periodic corrugations and there exist strong chemical bonds in the interface between the graphene N×N superlattice and the substrate. The strain does not induce significant changes in electronic structure. Furthermore, the results calculated in the local density approximation (LDA) are compared with those obtained in the generalized gradient approximation (GGA), showing that the LDA results are more reasonable than the GGA results when only two substrate layers are used in calculation.     

Electronic structures and vibrational properties of coronene on Ru(0001): first-principles study

We calculate the configurations, electronic structures, vibrational properties at the coronene/Ru(0001) interface, and adsorption of a single Pt atom on coronene/Ru(0001) based on density functional theory calculations. The geometric structures and electronic structures of the coronene on Ru(0001) are compared with those of the graphene/Ru(0001). The results show that the coronene/Ru(0001) can be a simplified model system used to describe the interaction between graphene and ruthenium. Further calculations of the vibrational properties of coronene molecule adsorbed on Ru(0001) suggest that the phonon properties of differently corrugated regions of graphene on Ru(0001) are different. This model system is also used to investigate the selective adsorption of Pt atoms on graphene/Ru(0001). The configurations of Pt on coronene/Ru(0001) with the lowest binding energy give clues to explain the experimental observation that a Pt cluster selectively adsorbs on the second highest regions of graphene/Ru(0001). This work provides a simple model for understanding the adsorption properties and vibrational properties of graphene on Ru(0001) substrate.     

Formation of graphene on Ru（0001） surface

We report on the formation of a graphene monolayer on a Ru(0001) surface by annealing the Ru(0001) crystal. The samples are characterized by scanning tunnelling microscopy (STM) and Auger electron spectroscopy (AES). STM images show that the Moir\'{e} pattern is caused by the graphene layer mismatched with the underlying Ru(0001) surface and has an $N\times N$ superlattice. It is further found that the graphene monolayer on a Ru(0001) surface is very stable at high temperatures. Our results provide a simple and convenient method to produce a graphene monolayer on the Ru(0001) surface, which is used as a template for fabricating functional nanostructures needed in future nano devices and catalysis.     

Comparative study of the nature of chemical bonding of corrugated graphene on Ru(0001) and Rh(111) by electronic structure calculations

Recently, atomic resolved scanning tunneling microscopy investigations revealed that, depending on the substrate (Ni(111), Ru(0001), Ir(111), Pt(111), Rh(111)), graphene overlayer might present regular corrugation patterns, with periodically repeated units of a few nanometers. Variations of the interactions at the interface and the modulation of the local electronic properties are associated with the exact atomic arrangement of the carbon pairs with respect to the metal atoms of the substrate. Better understanding of the atomic structure and of the chemical bonding between graphene and the underlying transition metal is motivated by the fundamental scientific relevance of such systems, but it is also crucial in the perspective of possible applications. With the present work, we propose model systems for the two interfaces showing the most pronounced corrugation patterns, i.e. graphene/Ru(0001) and graphene/Rh(111). Our goal is to understand the nature of the interactions by means of electronic structure calculations based on Density Functional Theory. Our simulations qualitatively reproduce very well experimental results such as the STM topographies and the electrostatic potential maps, and quantitatively provide the closest agreement that has been published so far. The detailed analysis of the electronic structure at the interface highlights similarities and differences by changing the supporting transition metal. Our results point to a fundamental role of the hybridization between the π orbitals of graphene with the d band of the metal in determining the specific corrugation of the adsorbed monolayer. It is shown that differences in the response of the graphene electronic structure to the interaction with the metal can hinder the hybridization and lead to substantially different structures.     

Graphene on Ru(0001): a 25 x 25 supercell

The structure of a single layer of graphene on Ru(0001) has been studied using surface x-ray diffraction. A surprising superstructure containing 1250 carbon atoms has been determined, whereby 25 x 25 graphene unit cells lie on 23 x 23 unit cells of Ru. Each supercell contains 2 x 2 crystallographically inequivalent subcells caused by corrugation. Strong intensity oscillations in the superstructure rods demonstrate that the Ru substrate is also significantly corrugated down to several monolayers and that the bonding between graphene and Ru is strong and cannot be caused by van der Waals bonds. Charge transfer from the Ru substrate to the graphene expands and weakens the C-C bonds, which helps accommodate the in-plane tensile stress. The elucidation of this superstructure provides important information in the potential application of graphene as a template for nanocluster arrays.     

Semiconducting electronic property of graphene adsorbed on (0001) surfaces of SiO2

First-principles total energy calculations are performed to investigate the energetics and electronic structures of graphene adsorbed on both an oxygen-terminated SiO2 (0001) surface and a fully hydroxylated SiO2 (0001) surface. We find that there are several stable adsorption sites for graphene on both O-terminated and hydroxylated SiO2 surfaces. The binding energy in the most stable geometry is found to be 15 meV per C atom, indicating a weak interaction between graphene and SiO2 (0001) surfaces. We also find that the graphene adsorbed on SiO2 is a semiconductor irrespective of the adsorption arrangement due to the variation of on-site energy induced by the SiO2 substrate.     

Surface strain versus substrate interaction in heteroepitaxial metal layers: Pt on Ru(0001)

By studying the adsorption of CO on up to 30 layers of Pt deposited on Ru(0001) the influence of surface strain on the adsorption energy has been disentangled from the residual chemical interaction with the substrate. While the electronic influence of the substrate has largely vanished for three Pt layers, the effect of surface strain due to the 2.5% lattice mismatch of Pt and Ru remains initially intact and is only gradually released for n>/=5 Pt layers. Electronic structure calculations confirm the experimental observations, in particular, the dramatic decrease of the CO adsorption energy on a single Pt layer which is caused by the strong Pt-Ru interlayer coupling.     

Ru(0001) 表面BaO吸附层的原子结构和氮分子的吸附性质

采用密度泛函理论研究了Ru(0001) /BaO表面的原子层结构和氮分子的吸附性质. 研究结果表明, 在低覆盖度下氧化钡倾向于以相同的构型形成Ru(0001) 表面原子层. 在此构型中, 氧原子位于表面p(1× 1) 结构的hcp谷位, 而钡原子则位于同一p(1× 1) 结构的顶位附近. 钌氧键键长等于0.209 nm, 比EXAFS的实验值大0.018 nm. 在Ru(0001) /BaO表面氮分子倾向吸附于钡原子附近. 相应位置的氮分子吸附能位于0.70到0.87 eV之间, 大于氧原子附近的氮分子吸附能. 钡原子附近的钌原子对氮分子具有更强的活化性能. 相应位置的氮分子拉伸振动频率等于1946 cm^{- 1}, 比氧原子附近的最大分子振动频率小约130 cm^-1. Ru(0001) /BaO表面氮分子键强度介于清洁Ru(0001) 和Ru(0001) /Ba表面之间. Ru(0001)/BaO表面不同位置的氮分子吸附性质差异是由钡和氧原子化学性质不同造成的. 表面钡原子的作用能够减少吸附氮分子的σ^*轨道电子密度, 增加π^*轨道电子密度, 从而增强氮分子和钌原子间的轨道杂化作用, 弱化氮分子键.     

Imaging spin-reorientation transitions in consecutive atomic Co layers on Ru(0001)

By means of spin-polarized low-energy electron microscopy, we show that the magnetic easy axis of one to three atomic-layer thick cobalt films on Ru(0001) changes its orientation twice during deposition: One-monolayer and three-monolayer thick films are magnetized in plane, while two-monolayer films are magnetized out of plane. The Curie temperatures of films thicker than one monolayer are well above room temperature. Fully relativistic calculations based on the screened Korringa-Kohn-Rostoker method demonstrate that only for two-monolayer cobalt films does the interplay between strain, surface, and interface effects lead to perpendicular magnetization.     

Electronic structures and coronene on Ru（0001）： vibrational properties of first-principles study

We calculate the configurations,electronic structures,vibrational properties at the coronene/Ru(0001) interface,and adsorption of a single Pt atom on coronene/Ru(0001) based on density functional theory calculations.The geometric structures and electronic structures of the coronene on Ru(0001) are compared with those of the graphene/Ru(0001).The results show that the coronene/Ru(0001) can be a simplified model system used to describe the interaction between graphene and ruthenium.Further calculations of the vibrational properties of coronene molecule adsorbed on Ru(0001) suggest that the phonon properties of differently corrugated regions of graphene on Ru(0001) are different.This model system is also used to investigate the selective adsorption of Pt atoms on graphene/Ru(0001).The configurations of Pt on coronene/Ru(0001) with the lowest binding energy give clues to explain the experimental observation that a Pt cluster selectively adsorbs on the second highest regions of graphene/Ru(0001).This work provides a simple model for understanding the adsorption properties and vibrational properties of graphene on Ru(0001) substrate.     

Ge在Ru(0001)表面上生长及其性质研究

报道Ge在Ru(0001)表面上生长以及相互作用行为的扫描隧道显微镜（STM）和x射线光电子能谱（XPS）研究. STM的实验结果表明Ge在Ru(0001)表面的生长呈典型的Stranski_Krastanov生长模式，Ge的覆盖度小于单原子层时呈层状生长，而从第二层开始呈岛状生长. XPS测量显示衬底Ru(0001)与Ge的相互作用很弱. Ru(0001)表面的Ru 3d5/2和Ru 3d3/2芯态结合能分别处于2798和2840 eV. 随着Ge的生长，到Ge层的厚度为20个单原子层，衬底Ru 3d芯态结合能减小了约02 eV，而Ge 3d芯态结合能从Ge低覆盖度时的289 eV增加到了290 eV，其相对位移约为01 eV. 关键词： Ge Ru表面 生长 相互作用     

Graphene on Ru(0001): contact formation and chemical reactivity on the atomic scale

Graphene on Ru(0001) is contacted with Au tips of a cryogenic scanning tunneling microscope. The formation and conductance of single-atom contacts vary within the moiré unit cell. Density functional calculations reveal that elastic distortions of the graphene lattice occur at contact due to a selectively enhanced chemical reactivity of C atoms at hollow sites of Ru(0001). Concomitant quantum transport calculations indicate that the graphene-Ru distance determines the conductance variations.     

6H-SiC(0001)表面graphene逐层生长的分子动力学研究

利用经典分子动力学方法和模拟退火技术分析研究了6H-ＳiC（0001）表面graphene的逐层生长过程及其形貌结构特点．研究表明,经过高温蒸发表面硅原子后,6H-ＳiC（0001）表面的碳原子能够通过自组织过程生成稳定的局部单原子层graphene结构．这种过程类似于6H-ＳiC（0001）表面graphene的形成,其生长和结构形貌演化主要取决于退火温度和表面碳原子的覆盖程度． 研究发现,当退火温度高于1400K时,6H-ＳiC（0001）表面碳原子能形成局部的单原子层graphene结构．这一转变温 关键词： graphene 碳化硅 分子动力学     

Deposition of metal clusters on single-layer graphene/Ru(0001): Factors that govern cluster growth

Fabrication of nanoclusters on a substrate is of great interest in studies of model catalysts. The key factors that govern the growth and distribution of metal on graphene have been studied by scanning tunneling microscopy (STM) based on different behaviors of five transition metals, namely Pt, Rh, Pd, Co, and Au supported on the template of a graphene moiré pattern formed on Ru(0001). Our experimental findings show that Pt and Rh form finely dispersed small clusters located at fcc sites on graphene while Pd and Co form large clusters at similar coverages. These results, coupled with previous findings that Ir forms the best finely dispersed clusters, suggest that both metal–carbon (M–C) bond strength and metal cohesive energies play significant roles in the cluster formation process and that the M–C bond strength is the most important factor that affects the morphology of clusters at the initial stages of growth. Furthermore, experimental results show Au behaves differently and forms a single-layer film on graphene, indicating other factors such as the effect of substrate metals and lattice match should also be considered. In addition, the effect of annealing Rh on graphene has been studied and its high thermal stability is rationalized in terms of a strong interaction between Rh and graphene as well as sintering via Ostwald ripening.     

Time-resolved two-photon photoemission of unoccupied electronic states of periodically rippled graphene on Ru(0001)

The unoccupied electronic states of epitaxially grown graphene on Ru(0001) have been explored by time- and angle-resolved two-photon photoemission. We identify a Ru derived resonance and a Ru/graphene interface state at 0.91 and 2.58?eV above the Fermi level, as well as three image-potential derived states close to the vacuum level. The most strongly bound, short-lived, and least dispersing image-potential state is suggested to have some quantum-well character with a large amplitude below the graphene hills. The two other image-potential states are attributed to a series of slightly decoupled states. Their lifetimes and dispersions are indicative of electrons moving almost freely above the valley areas of the moiré superstructure of graphene.     

Ru(0001)表面氮分子和钡原子的相互作用

本文采用密度泛函理论方法研究了Ru(0001)表面氮分子和钡原子的相互作用。计算结果表明,钡原子的作用弱化了氮分子键。氮分子键长从Ru(001)-N2表面的0.113 nm伸长至Ru(001)-N2/Ba表面的0.120 nm;分子的拉伸振动频率从2221 cm-1减小到1746 cm-1;氮分子得到的电荷数从清洁表面的0.3 e增加到1.1 e。电荷从钡原子6s轨道向钌原子4d轨道转移,转移电荷增强了氮分子 空轨道和钌原子4d轨道间的杂化作用,导致 分子轨道和 杂化轨道发生极化。轨道极化使分子电偶极矩增加了约-0.136 eÅ。金属钡在Ru(0001)表面氮分子活化过程中具备电子型助催剂的特征。     

Relative stability of armchair,zigzag and reczag graphene edges on the Ru(0001) surface

The relative stability of armchair, zigzag, and the reconstructed zigzag (reczag) graphene edges was studied using density functional theory with the Perdew, Burke, and Ernzerhof (PBE) exchange correlation functional for graphene nanoribbons in vacuo and on the Ru(0001) surface. Although the reczag edge was found to be more stable in vacuo confirming previous predictions of Koskinen et al. [Phys. Rev. Lett. 101 (2008) 115502], the relative stability reverses upon adsorption on the Ru(0001) surface. The zigzag edge is more stable than the reczag edge on the surface by about 0.15 eV/Å and the armchair ribbon was found to be approximately isoenergetic with the zigzag ribbon. For all three types of edges, strong edge–Ru interactions are observed that cause the edges to buckle down. The lowered edge height may facilitate C attachments at graphene edges during graphene synthesis.     

A molecular beam study of the adsorption dynamics of CO on Ru(0001), Cu(111) and a pseudomorphic Cu monolayer on Ru(0001)

We have investigated the sticking coefficient of CO on Ru(0001), a pseudomorphic Cu monolayer on Ru(0001), and a fully relaxed Cu(111) multilayer as function of kinetic energy, surface coverage, and surface temperature. At a low kinetic energy of 0.09 eV, the initial sticking coefficients, S₀, on these surfaces are determined to be 0.92, 0.96 and 0.87, respectively. In all cases, a decrease of S₀ with increasing beam energy was observed, yielding values of 0.58, 0.14 and 0.07, respectively, at a kinetic energy of 2.0 eV. For all three surfaces the coverage dependent sticking coefficients, S(Θ), display very characteristic behavior at low kinetic energies: S(Θ) remains more or less constant up to coverages close to saturation, indicative of precursor adsorption kinetics. However, characteristic minima at intermediate coverages are observed, which are correlated to the formation of well ordered adsorbate phases. For high kinetic energies we observe a transition towards a linear decrease of S(Θ) for Ru(0001). In contrast, for the pseudomorphic Cu monolayer and for Cu(111) we find an increase in the sticking coefficients at low coverages, followed by a decrease close to saturation. This behavior is attributed to adsorbate assisted sticking, that is, to a higher sticking coefficient on adsorbate covered regions than on the bare surface. The comparison between the pseudomorphic monolayer and Cu(111) reveals that the CO bond strength to the former is larger by 40%. The initial sticking coefficients for both surfaces are very similar at low kinetic energies; at high kinetic energies, S₀ for the pseudomorphic Cu monolayer is, however, larger by a factor of two.     

Binding energies and K-edge spectra of NO chemisorbed on Ru(0001)

The electronic structures, adsorption energies and equilibrium geometries of chemisorbed NO on the Ru(0001) surface for several adsorption sites were determined using cluster models and employing the first principles, local density theory. Ground state one-electron eigenvalues and wave functions were obtained using the discrete variational method with numerical atomic bases. K-edge X-ray absorption spectra of both nitrogen and oxygen for each geometry were obtained using a scattered wave method. The effects of the surface on these spectra were studied by comparison with results from an isolated NO molecule and with the XPS and UPS experiments of Umbach et al. Both the NO and the NO-substrate vibration frequencies were calculated. Comparison between these theoretical results, recent electron energy loss spectra of Conrad et al. and early experiments of Thomas et al. suggests that NO is adsorbed only at threefold and top sites.     

First-principles study of Sr adsorption on InN (0001)

Structures of Sr adsorbed on InN (0001) surfaces are theoretically investigated by first-principles calculations. The adsorption energies of Sr on InN (0001) decrease with decreasing Sr coverage. An InN (0001)-(2 ×2) surface structure covered by a 1/4 monolayer of Sr at the T₄ sites may be the most energetically favourable. Sr atoms may substitute indium atoms, or accumulate at the voids inside InN films. The interstitial Sr defects may act as a potential source of compensation for the p-type behaviour of Sr-doped InN at the surface.