Characterization of miniature RAD-HARD silicon diodes as dosimeters for small fields of photon beams used in radiotherapy

The dosimetric response characterization and beam data acquisition performance of a miniature Float Zone (FZ) silicon diode for photon beams was investigated using Novalis TX linear accelerator (Varian Medical Systems^®). In all measurements the unbiased diode operated in a short-circuit mode, connected to the input of a Keithley 6517B electrometer using a water phantom. For photon beams of the 6 and 15 MV the results presented good repeatability (coefficient of variation ≤1.6%), measured through switching on/off the photon beams. Moreover, the diode showed a quite linear response, given by the charge versus absorbed dose, with charge sensitivities higher than 6.9 nC/Gy. The output factor, percentage depth dose profile (PDD) and transversal dose profile (TDP) were also measured in a water phantom. For small field sizes, the output factor values using the FZ diode were compared with measurements obtained with a SFD (Stereotactic Field Diode) commercial diode and the differences were 5.4%, 2.5% and 1.3% for the field sizes of 1 × 1, 2 × 2 and 3 × 3 cm². For larger field sizes (≥4 × 4 cm²), the maximum difference found was 0.7% in comparison with values obtained with a CC13 ionization chamber. Thus, the result demonstrates that the unshielded FZ diode has the potential to be used for measuring of, as it performed acceptably well for both small and large field sizes. The TDP experimental results obtained with the FZ diode for field sizes of: 1 × 1 cm², 2 × 2 cm² and 4 × 4 cm² are in agreement with experimental results acquired with several commercial detectors. Through the TDP study, the comparison of the field penumbra size confirmed the excellent spatial resolution of the miniature diode. However, the PDD study, requires further investigation.     

Dual‐wavelength monolithic Y‐branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

A dual‐wavelength monolithic Y‐branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one‐step epitaxy. A maximum optical output power of 110 mW is obtained in cw‐operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm⁻¹) and a mean spectral distance of 0.46 nm (10.2 cm⁻¹) over the whole operating range. Together with a free running power stability of ± 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).     

Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode

We demonstrated the improved performance of near UV (365 nm) InGaN/AlGaN-based LEDs using highly reflective Al-based p-type reflectors with graphene sheets as a diffusion barrier. The use of graphene sheets did not degrade the reflectance of ITO/Al contacts, viz. ∼81% at 365 nm. The ITO/graphene/Al contacts annealed at 300 °C exhibited better ohmic behavior with a specific contact resistance of 1.5 × 10⁻³ Ωcm² than the ITO/Al contact (with 9.5 × 10⁻³ Ωcm²). Near UV LEDs fabricated with the ITO/graphene/Al contact annealed at 300 °C showed a 7.2% higher light output (at 0.1 W) than LEDs with the ITO/Al reflector annealed at 300 °C. The SIMS results exhibited that, unlike the ITO/graphene/Al, the ITO/Al contacts undergo a significant indiffusion of Al atoms toward the GaN after annealing. Furthermore, both Ga and Mg atoms were also more extensively outdiffused in the ITO/Al contacts after annealing. On the basis of the SIMS and electrical results, the possible explanations for the annealing-induced degradation of the ITO/Al contacts are described and discussed.     

Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (n_s) of a two-dimensional electron gas has decreased significantly from 4.66 × 10¹² cm⁻² to 2.15 × 10¹² cm⁻² upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (n_s) of a reference structure and the reduced n_s caused by the Au gate metal are approximately 5.66 × 10¹² cm⁻² and 1.08 × 10¹² cm⁻², respectively.     

Reactions of hydrazine with the amidogen radical and atomic hydrogen

The rate coefficient k₁ for NH₂ + N₂H₄ was measured to be (5.4 ± 0.4) × 10⁻¹⁴ cm³ molecule⁻¹ s⁻¹ at 296 K. NH₂ was generated by pulsed laser photolysis of NH₃ at 193 nm, and monitored as a function of time by pulsed laser-induced fluorescence excited at 570.3 nm under pseudo-first order conditions in the presence of excess N₂H₄ in an Ar bath gas. This reaction was also investigated computationally, with geometries and scaled frequencies obtained with M06-2X/6-311+G(2df,2p) theory, and single-point energies from CCSD(T)-F12b/cc-pVTZ-F12 theory, plus a term to correct approximately for electron correlation through CCSDT(Q). Three connected transition states are involved and rate constants were obtained via Multistructural Improved Canonical Variational Transition State Theory with Small Curvature Tunneling. Combination of experiment and theory leads to a recommended rate coefficient for hydrogen abstraction of k₁ = 6.3 × 10⁻²³ T^3.44 exp(+289 K/T) cm³ molecule⁻¹ s⁻¹. The minor channel for H + N₂H₄ forming NH₂ + NH₃ was characterized computationally as well, to yield 5.0 × 10⁻¹⁹ T^2.07 exp(-4032 K/T) cm³ molecule⁻¹ s⁻¹. These results are compared to several discordant prior estimates, and are employed in an overall mechanism to compare with measurements of half-lives of hydrazine in a shock tube.     

Synergistically Enhancing Thermoelectric Performance of n-Type PbTe with Indium Doping and Sulfur Alloying

To achieve high-performance n-type PbTe-based thermoelectric materials, this work provides a synergetic strategy to improve electrical transport property with indium (In) element doping and reduces thermal conductivity with sulfur (S) element alloying. In n-type PbTe, In doping can tune the carrier density in the whole working temperature range, causing the carrier density to increase from 2.18 × 10¹⁹ cm⁻³ at 300 K to 4.84 × 10¹⁹ cm⁻³ at 823 K in Pb_0.98In_0.005Sb_0.015Te. The optimized carrier density can further modulate electrical conductivity and Seebeck coefficient, finally contributing to a substantial increase of power factor, and a maximum power factor increase from 19.7 µW cm⁻¹ K⁻² in Pb_0.985Sb_0.015Te to 28.2 µW cm⁻¹ K⁻² in Pb_0.9775In_0.0075Sb_0.015Te. Based on the optimally In-doped PbTe, S alloying is introduced to suppress phonon propagation by forming a complete solid solution, which could effectively reduce lattice thermal conductivity and simultaneously benefit carrier mobility to maintain high power factor. With S alloying, the minimum lattice thermal conductivity decreases from 0.76 Wm⁻¹ K⁻¹ in Pb_0.985Sb_0.015Te to 0.42 Wm⁻¹ K⁻¹ in Pb_0.98In_0.005Sb_0.015Te_0.88S_0.12. Combining the advantages of both In doping and S alloying, the peak ZT value and averaged ZT (ZT_ave) (300–873 K) are boosted from 1.0 and 0.60 in Pb_0.985Sb_0.015Te to 1.4 and 0.87 in Pb_0.98In_0.005Sb_0.015Te_0.94S_0.06.     

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10²² to 4.99 × 10²¹ cm⁻³ with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cm²/V. The samples had sheet resistances of 4.17–4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10⁻⁵ to 6.43 × 10⁻⁵ Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10⁻³ Ω⁻¹.     

Development of sulphurized SnS thin film solar cells

Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor layers in a closed chamber. The effect of sulphurization temperature (T_s) that varied in the range of 150–450 °C for a fixed sulphurization time of 120 min on SnS film was studied through various characterization techniques. X-ray photoelectron spectroscopy analysis demonstrated the transformation of metallic tin layers into SnS single phase for T_s between 300 °C and 350 °C. The X-ray diffraction measurements indicated that all the grown films had the (111) crystal plane as the preferred orientation and exhibited orthorhombic crystal structure. Raman analysis showed modes at 95 cm⁻¹, 189 cm⁻¹ and 218 cm⁻¹ are related to the A_g mode of SnS. AFM images revealed a granular change in the grain growth with the increase of T_s. The optical energy band gap values were estimated using the transmittance spectra and found to be varied from 1.2 eV to 1.6 eV with T_s. The Hall effect measurements showed that all the films were p-type conducting nature and the layers grown at 350 °C showed a low electrical resistivity of 64 Ω-cm, a net carrier concentration of 2 × 10¹⁶ cm⁻³ and mobility of 41 cm² V⁻¹ s⁻¹. With the use of sprayed Zn_0.76Mg_0.24O as a buffer layer and the sputtered ZnO:Al as window layer, the SnS based thin film solar cell was developed that showed a conversion efficiency of 2.02%.     

Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer

The current–voltage (I–V) characteristics of Al/SnO₂/p-Si (MIS) Schottky diodes prepared by means of spray deposition method have been measured at 80, 295 and 350 K. In order to interpret the experimentally observed non-ideal Al/SnO₂/p-Si Schottky diode parameters such as, the series resistance R_s, barrier height Φ_B and ideality factor n, a novel calculation method has been reported by taking into account the applied voltage drop across interfacial oxide layer V_i and ideality factor n in the current transport mechanism. The values obtained for V_i were subtracted from the applied voltage values V and then the values of R_s were recalculated. The parameters obtained by accounting for the voltage drop V_i have been compared with those obtained without considering the above voltage drop. It is shown that the values of R_s estimated from Cheung’s method were strongly temperature-dependent and decreased with increasing temperature. It is shown that the voltage drop across the interfacial layer will increase the ideality factor and the voltage dependence of the I–V characteristics. The interface state density N_ss of the diodes has an exponential growth with bias towards the top of the valance band for each temperature; for example, from 2.37 × 10¹³ eV⁻¹ cm⁻² in 0.70−E_v eV to 7.47 × 10¹³ eV⁻¹ cm⁻² in 0.62−E_v eV for 295 K. The mean N_ss estimated from the I–V measurements decreased with increasing the temperature from 8.29 × 10¹³ to 2.20 × 10¹³ eV⁻¹ cm⁻².     

Transport and phase dynamics of poly(vinyl pyrrolidone) doped plastically crystalline N-methyl-N-propylpyrrolidinium tetrafluoroborate

The plastic crystal phase forming N-methyl-N-propylpyrrolidinium tetrafluoroborate organic salt (P₁₃BF₄) was combined with 2, 5 and 10 wt.% poly(vinyl pyrrolidone) (PVP). The ternary 2 wt.% PVP/2 wt.% LiBF₄/P₁₃BF₄ was also investigated. Thermal analysis, conductivity, optical thermomicroscopy, and Nuclear Magnetic Resonance (¹¹B, ¹⁹F, ¹H, ⁷Li) were used to probe the fundamental transport processes. Both the onset of phase I and the final melting temperature were reduced with increasing additions of PVP. Conductivity in phase I was 2.6 × 10^− 4 S cm^− 1 5.2 × 10^− 4 S cm^− 1 1.1 × 10^− 4 S cm^− 1 and 3.9 × 10^− 5 S cm^− 1 for 0, 2, 5 and 10 wt.%PVP/P₁₃BF₄, respectively. Doping with 2 wt.% LiBF₄ increased the conductivity by up to an order of magnitude in phase II. Further additions of 2 wt.% PVP slightly reduced the conductivity, although it remained higher than for pure P₁₃BF₄.     

InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell

We have investigated the effect of strain compensation on the structural and optical properties of multiple stacked InAs quantum dots (QDs) on GaAs (0 0 1) substrates grown by atomic hydrogen-assisted RF-MBE. Strain relaxation was not observed from the reciprocal space mapping, and as a result, dislocations and coalesced islands were not observed in 50 layer-stacked QDs. Thus, the total QD density of as high as 2.5×10¹² cm⁻² was achieved. For QD solar cell characterization, the short-circuit current density increased from 21.0 to 26.4 mA/cm² as the number of stacks was increased from 20 to 50. Further increase of stacks did not affect the open-circuit voltage of ∼0.7 V and diode factor of ∼1.6, which implies that high crystalline quality was maintained even after 50 layers of stacking.     

Development of proton conducting biopolymer membrane based on agar–agar for fuel cell

A proton-conducting polymer electrolyte based on agar and ammonium nitrate (NH₄NO₃) has been prepared through solution casting technique. The prepared polymer electrolytes were characterized by impedance spectroscopy, X-ray diffraction, and Fourier transform infra-red spectroscopy. Impedance analysis shows that sample with 60 wt.% NH₄NO₃ has the highest ionic conductivity of 6.57 × 10⁻⁴ S cm⁻¹ at room temperature. As a function of temperature, the ionic conductivity exhibits an Arrhenius behaviour increasing from 6.57 × 10⁻⁴ S cm⁻¹ at room temperature to 1.09 × 10⁻³ S cm⁻¹ at 70 °C. Transport parameters of the samples were calculated using Wagner’s polarization method and thus shows that the increase in conductivity is due to the increase in the number of mobile ions. Fuel cell has been constructed with the highest proton conductivity polymer 40agar/60NH₄NO₃ and the open circuit voltage is found to be 558 mV.

     

Investigation of delta-doped quantum wells for power FET applications

We report the use of strain-balanced quantum-well structures to generate high carrier density, high mobility layers suitable for power field effect transistor (FET) applications. Standard designs of modulation-doped heterojunctions have a sheet carrier density limited to a maximum of ∼3 ×  10¹²cm⁻², while doped channel devices allow higher densities, but with degraded mobility. By combining the technique of delta-doping with the use of a compositionally graded InGaAs quantum well, grown strain balanced on InP, high mobilities and excellent saturation drift velocities have been obtained for sheet densities of 4–5 ×  10¹²cm⁻². This paper describes the structure and electrical properties of the layers and assesses their potential for FETs.     

First order Raman scattering analysis of transition metal ions implanted GaN

Transition Metal (TM) ions V, Cr, Mn and Co were implanted into GaN/sapphire films at fluences 5×10¹⁴, 5×10¹⁵ and 5×10¹⁶ cm⁻². First order Raman Scattering (RS) measurements were carried out to study the effects of ion implantation on the microstructure of the materials, which revealed the appearance of disorder and new phonon modes in the lattice. The variations in characteristic modes 1GaN i.e. E₂(high) and A₁(LO), observed for different implanted samples is discussed in detail. The intensity of nitrogen vacancy related vibrational modes appearing at 363 and 665 cm⁻¹ was observed for samples having different fluences. A gallium vacancy related mode observed at 277/281 cm⁻¹ for TM ions implanted at 5×10¹⁴ cm⁻² disappeared for all samples implanted with rest of fluences. The fluence dependent production of implantation induced disorder and substitution of TM ions on cationic sites is discussed, which is expected to provide necessary information for the potential use of these materials as diluted magnetic semiconductors in future spintronic devices.     

A miniaturized prototype of resonant banana-shaped photoacoustic cell for gas sensing

A resonant photoacoustic cell intended for laser-spectroscopy gas sensing is represented. This cell is a miniature imitation of a macro-scale banana-shaped cell developed previously. The parameters, which specify the cavity shape, are chosen so as not only to provide optimal cell operation at a selected acoustic resonance but also to reduce substantially the cell sizes. A miniaturized prototype cell (the volume of acoustic cavity of ∼5 mm³) adapted to the narrow diffraction-limited beam of near-infrared laser is produced and examined experimentally. The noise-associated measurement error and laser-initiated signals are studied as functions of modulation frequency. The background signal and the useful response to light absorption by the gas are analyzed in measurements of absorption for ammonia in nitrogen flow with the help of a pigtailed DFB laser diode oscillated near a wavelength of 1.53 μm. The performance of prototype operation at the second longitudinal acoustic resonance (the resonance frequency of ∼32.9 kHz, Q-factor of ∼16.3) is estimated. The noise-limited minimal detectable absorption normalized to laser-beam power and detection bandwidth is ∼8.07 × 10⁻⁸ cm⁻¹ W Hz^−1/2. The amplitude of the background signal is equivalent to an absorption coefficient of ∼2.51 × 10⁻⁵ cm⁻¹. Advantages and drawbacks of the cell prototype are discussed. Despite low absorption-sensing performance, the produced miniaturized cell prototype shows a good capability of gas-leak detection.     

Measurement of the absolute Raman scattering cross section of the 1584‐cm−1 band of benzenethiol and the surface‐enhanced Raman scattering cross section enhancement factor for femtosecond laser‐nanostructured substrates

The absolute Raman scattering cross section (σ_RS) for the 1584‐cm⁻¹ band of benzenethiol at 897 nm (1.383 eV) has been measured to be 8.9 ± 1.8 × 10⁻³⁰ cm² using a 785‐nm pump laser. A temperature‐controlled, small‐cavity blackbody source was used to calibrate the signal output of the Raman spectrometer. We also measured the absolute surface‐enhanced Raman scattering cross section (σ_SERS) of benzenethiol adsorbed onto a silver‐coated, femtosecond laser‐nanostructured substrate. Using the measured values of 8.9 ± 1.8 × 10⁻³⁰ and 6.6 ± 1.3 × 10⁻²⁴ cm² for σ_RS and σ_SERS respectively, we calculate an average cross‐section enhancement factor (EF) of 0.8 ± 0.3 × 10⁶. Copyright © 2009 John Wiley & Sons, Ltd.     

Compact sensor for methane detection in the mid infrared region based on Quartz Enhanced Photoacoustic Spectroscopy

A compact system for methane sensing based on the Quartz-Enhanced Photoacoustic Spectroscopy technique has been developed. This development has been taken through two versions which were based respectively on a Fabry Perot quantum wells diode laser emitting at 2.3 μm, and on a quantum wells distributed feedback diode laser emitting at 3.26 μm. These lasers emit near room temperature in the continuous wave regime. A spectrophone consisting of a quartz tuning fork and one steel microresonator was used. Second derivative wavelength modulation detection was used to perform low methane concentration measurements. The sensitivity and the linearity of the QEPAS sensor were studied. A normalized noise equivalent absorption coefficient of 7.26 × 10⁻⁶ cm⁻¹ W/Hz^1/2 was achieved. This corresponds to a detection limit of 15 ppmv for 12 s acquisition time.     

An in-depth investigation of physical properties of Nd doped CdS thin films for optoelectronic applications

The different contents (0 wt.%, 1 wt.%, 3 wt.% and 5 wt.%) of Nd @CdS films were casted using spray pyrolysis deposition procedure. The preferential orientation of crystallites along (002) for all films was noted by XRD profiles. The mean crystalline size (D_avg), strain (ɛ_avg) and dislocation density (δ_avg) have also been evaluated using XRD results and discussed. The spherical shape morphology of nanoscale particles of Nd@CdS films were analyzed by FE-SEM, exhibits the increased grain sizes with Nd doping concentration. The optical band gaps (2.4–2.36 eV) were found to be decreased with increasing Nd doping content upto (3 wt.%) and increased at 5 wt.% The PL profile displays a stout intensity peak observed at 532 nm and week emission band at 638 nm. The dielectric constant, loss and loss tangent of pristine and Nd@CdS thin films were investigated by dielectric measurements. The optimum values of non-linear refractive index 1.06 × 10⁻¹⁰, 4.41 × 10⁻¹¹, 3.44 × 10⁻¹¹ and 1.85 × 10⁻¹⁰ were observed for Nd content varies from pristine to 5 wt.% respectively. Furthermore, optimum non-linear susceptibility values 7.31 × 10⁻¹², 1.079 × 10⁻¹², 4.53 × 10⁻¹³ and 1.36 × 10⁻¹¹ were observed for 0, 1, 3 and 5 wt.% of Nd contents respectively in CdS. Such type of characteristics of Nd doped CdS thin films can be useful for optical devices.     

Effects of compositions on properties of PEO–KI–I2 salts polymer electrolytes for DSSC

The effects of compositions on properties of PEO/KI/I₂ salts polymer electrolytes were investigated to optimize the photovoltaic performance of solid state DSSCs. XRD pattern for the mole ratio 12:1 of [EO:KI] was showed the formation of complete amorphous complex. DSC results also confirmed the amorphous nature of the polymer electrolyte. The highest value of ionic conductivity is 8.36 × 10^− 5 S/cm at 303 K (ambient temperature) and 2.32 × 10^− 4 S/cm at 333 K (moderate temperature) for the mole ratio 12:1 of EO:KI complex. The effect of contribution of [I⁻] and [I₃⁻] concentration with conductivity were also evaluated. FTIR spectrum reveals that the alkali metal cations were co-ordinated to ether oxygen of PEO. The formation of polyiodide ions, such as symmetric I₃⁻ (114 cm^− 1) and I₅⁻ (145 cm^− 1) caused by the addition of iodine was confirmed by FT Raman spectroscopic measurements. The optimum composition of PEO–KI–I₂ polymer electrolyte system for higher conductivity at ambient and moderate temperatures was reported. A linear Arrhenius type behaviour was observed for all the PEO–KI polymer complexes. Transport number measurements were carried out for several polymer electrolyte compositions. Dye-sensitized solar cells were fabricated by using higher conductivity polymer electrolyte compositions and its photoelectrochemical performance was investigated. The fill factor, short-circuit current, photovoltage and energy conversion efficiency of the DSSC assembled with optimized electrolyte composition were calculated to be 0.563, 6.124 mA/cm², 593 mV and 2.044% respectively.     

Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells

In c-Si solar cells, surface recombination velocity increases as the wafer thickness decreases due to an increase in surface to volume ratio. For high efficiency, in addition to low surface recombination velocity at the rear side, a high internal reflection from the rear surface is also required. The SiO_xN_y film with low absorbance can act as rear surface reflector. In this study, industrially feasible SiO₂/SiO_xN_y stack for rear surface passivation and screen printed local aluminium back surface field were used in the cell structure. A 3 nm thick oxide layer has resulted in low fixed oxide charge density of 1.58 × 10¹¹ cm⁻² without parasitic shunting. The oxide layer capped with SiO_xN_y layer led to surface recombination velocity of 155 cm/s after firing. Using single layer (SiO₂) rear passivation, an efficiency of 18.13% has been obtained with V_oc of 625 mV, J_sc of 36.4 mA/cm² and fill factor of 78.7%. By using double layer (SiO₂/SiO_xN_y stack) passivation at the rear side, an efficiency of 18.59% has been achieved with V_oc of 632 mV, J_sc of 37.6 mA/cm², and fill factor of 78.3%. An improved cell performance was obtained with SiO₂/SiO_xN_y rear stack passivation and local BSF.