Scintillation timing characteristics of (La,Gd)2Si2O7:Ce and Gd2SiO5:Ce single crystal scintillators: A comparative study

The scintillation timing characteristics of (La,Gd)₂Si₂O₇:Ce (GPSLa23.5%:Ce) single crystal were studied and compared with Gd₂SiO₅:Ce (GSO:Ce) single crystal. The photoelectron yield, scintillation decay times and coincidence time resolution were measured. At 511 keV γ-rays, the photoelectron yield of 10,770 ± 500 phe MeV⁻¹ and energy resolution of 5.4 ± 0.2% obtained for GPSLa23.5%:Ce are much better than those of 3350 ± 160 phe MeV⁻¹ and 7.8 ± 0.3% obtained for GSO:Ce. The scintillation decay time profile was measured by the time-correlated single photon counting technique using a fast-slow coincidence setup. In both materials the comparable rise times of several nanoseconds are present. The fast component decay time of 56 ns with relative intensity of 49% obtained for GPSLa23.5%:Ce is inferior to that of 32 ns(88%) obtained for GSO:Ce. Consequently, the coincidence time resolution of GPSLa23.5%:Ce is slightly worse than that of GSO:Ce. The normalized time resolution was also discussed in terms of a number of photoelectrons and decay time of the scintillation pulse.     

Luminescence and scintillation properties of advanced Lu3Al5O12:Pr3+ single crystal scintillators

In this paper we present the luminescence and scintillation properties of Lu₃Al₅O₁₂:Pr (LuAG:Pr) single crystals with Pr³⁺ concentration of 0.13 wt %, grown by the Czochralski method. The light yield and energy resolution were measured under 662 keV γ-ray excitation. The dominant emission band peaking at 310 nm with a shoulder at 370 nm was observed in the photoluminescence spectrum. High light yield of 24,500 ph/MeV and an energy resolution of 5.3 % were obtained for a 6 × 6 × 2 mm³ LuAG:Pr sample. Light yield dependence on sample height and shaping time was measured. The estimated photofraction in pulse height spectrum and total mass attenuation coefficient at 662 keV γ-rays were also determined and compared with the theoretical ones calculated using the WinXCom program.     

Scintillation response of Y3Al5O12:Pr3+ single crystal scintillators

In this paper we present the photoluminescence (PL) and scintillation response of Pr³⁺-doped Y₃Al₅O₁₂ (YAG:Pr) single crystals grown by the Czochralski method with different Pr³⁺ concentrations of 0.16, 0.33, and 0.65 mol%. PL spectra and decay curves were measured for both the fast 5d → 4f and slow 4f → 4f emissions. The PL decay times were evaluated which evidence concentration quenching especially in ¹D₂ → ³H₄ emission for the highest Pr³⁺ concentration. Light yield (LY) of 15,600 photons per MeV and energy resolution of 6.4% at 662 keV γ-rays were obtained with the YAG:Pr (0.33%) crystal. The LY non-proportionality and energy resolution versus γ-ray energy were measured and the intrinsic resolution was calculated. A good proportionality of the LY was found within 7% over the energy range from 1274.5 keV down to 32 keV. The estimated photofraction in the pulse height spectra of 320 and 662 keV γ-rays was also determined and compared with the theoretical one calculated using WinXCom program.     

Improvement of the scintillation properties of Gd3Ga3Al2O12:Ce,B single crystals having tailored defect structure

A novel approach is reported to minimize various defect centers in Ce doped Gd₃Ga₃Al₂O₁₂ single crystals to improve the scintillation properties. The crystals of Gd₃Ga₃Al₂O₁₂ codoped with 0.2 at% Ce and B (GGAG:Ce,B) have been grown in air and argon ambient using the Czochralski technique. The scintillation light output of crystals grown in Ar ambient was significantly increased after annealing the crystals in air. The measured light output of 60000 ph/MeV for annealed crystals is the highest value reported among this class of materials. As a consequence, the energy resolution at 662 keV gamma‐rays from a ¹³⁷Cs source was improved from 8% for the crystals grown in air to 6% for crystals grown in Ar and subsequently annealed in air. Further, the thermal quenching energy of photoluminescence (PL) emission was increased to be 470 meV for the annealed crystals. The thermoluminescence (TL) measurements suggest that the crystals grown in Ar ambient and post‐growth annealed in air may have a lesser concentration of trap centers which subsequently lead to the improvement in optical and scintillation properties leading to a superior detector performance. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Gd3(Al,Ga)5O12:Ce闪烁晶体缺陷对其发光性能的影响

新型闪烁晶体Gd₃(Al,Ga)₅O₁₂:Ce(GAGG:Ce)在制备过程中易出现包裹体及反格位缺陷等问题,严重影响晶体的性能.为了抑制这些缺陷以得到大尺寸高质量的GAGG:Ce晶体,本文以Gd₃(Al,Ga)₅O₁₂为基质、Ce3+为掺杂离子,采用提拉法生长得到了GAGG:Ce晶体,并对不同晶体部位的物相结构、微区成分、透光性质、发光及时间性能进行了测试和对比分析.结果表明,GAGG:Ce晶体的透过谱中存在340和440 nm两处Ce³⁺特征吸收带,且位于550 nm处的直线透过率为82%.晶体尾部因杂相包裹体等宏观缺陷的影响,导致其透过率下降至70%左右.微区成分分析进一步表明GAGG:Ce晶体中存在三种类型的包裹体,分别为富Gd相、富Ce相及(Al,Ga)₂O₃相.GAGG:Ce晶体的X射线激发发射谱中在550 nm附近存在Ce³⁺宽发射带,且380 nm处还存在GdAl/Ga反格位缺陷引起的发射.晶体中存在的杂相包裹体及GdAl/Ga反格位缺陷等因素导致Ce³⁺在GAGG基质的发光强度下降12.5%;GdAl/Ga反格位离子与近邻Ce的隧穿效应使得GAGG:Ce晶体的衰减时间由117.7 ns延长至121.9 ns,且慢分量比例由16%增加至17.2%.     

Timing performance of ZnO:Ga nanopowder composite scintillators

The implementation of nanocrystal‐based composite scintillators as a new generation of ultrafast particle detectors is explored using ZnO:Ga nanopowder. Samples are characterized with a spectral‐time resolved photon counting system and pulsed X‐rays, followed by coincidence time resolution (CTR) measurements under 511 keV gamma excitation. Results are comparable to CTR values obtained using bulk inorganic scintillators. Bringing the ZnO:Ga nanocrystal's timing performance to radiation detectors could pave the research path towards sub‐20 ps time resolution as shown in this contribution. However, an efficiency boost when placing nanopowders in a transparent host constitutes the main challenge in order to benefit from sub‐nanosecond recombination times. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Luminescence and scintillation properties of Lu0.8Gd1.2SiO5:Ce and Lu1.8Gd0.2SiO5:Ce single crystals: A comparative study

The luminescence and scintillation properties of Lu_0.8Gd_1.2SiO₅:Ce and Lu_1.8Gd_0.2SiO₅:Ce single crystals are compared. At 662 keV γ-rays, light yield (LY) value of 29,800 ph/MeV obtained for Lu_1.8Gd_0.2SiO₅:Ce is much higher than that of 20,200 ph/MeV obtained for Lu_0.8Gd_1.2SiO₅:Ce. The energy resolution of 6.0% obtained for Lu_0.8Gd_1.2SiO₅:Ce is better than that of 7.7% for Lu_1.8Gd_0.2SiO₅:Ce due to its better intrinsic resolution and proportionality of LY. The LY and energy resolution for α-rays, as well as a LY ratio under excitation with α- and γ-rays (α/γ ratio) are also determined. The intrinsic LY and light loss coefficient under excitation with α- and γ-rays are evaluated. The photofraction at 662 keV γ-rays is also determined and discussed.     

Deep trapping states in cerium doped (Lu,Y,Gd)3(Ga,Al)5O12 single crystal scintillators

We study deep trapping states in Ce³⁺-doped garnet crystals with the composition (Lu,Y,Gd)₃(Ga,Al)₅O₁₂, recently shown as having remarkably high light yield. We use thermally stimulated luminescence (TSL) technique above room temperature and determine the composition Gd₃Ga₃Al₂O₁₂ as the host showing the lowest concentration of traps. This host consistently manifests very low afterglow comparable to that of the standard BGO crystal. We also perform TSL glow peak analysis based on the initial rise technique to evaluate trap depth and other characteristics associated with TSL peaks.     

12CaO·7Al_2O_3∶Ce~(3+)透明陶瓷的制备及其闪烁特性研究

采用高温固相法制备了不同Ce3+掺杂浓度的12Ca O·7Al2O3(C12A7∶x%Ce3+)陶瓷样品。在350 nm紫外光激发下,样品的发射光谱呈现为主峰位于440 nm的宽带,来源于Ce3+的5d1→2F5/2和2F7/2的辐射跃迁。随着Ce3+掺杂浓度的增加,发射强度增大;当Ce3+摩尔分数超过0.7%时,有杂质相出现。为了进一步提高光致发光强度,采用自蔓延燃烧法合成了C12A7∶0.5%Ce3+陶瓷样品。在H2气氛下热处理,通过改变笼中阴离子基团的种类和数目提高了陶瓷闪烁特性(发光强度和衰减时间)。结果表明,C12A7∶Ce3+陶瓷是可应用于闪烁体的潜在材料。     

Comparison of Lu3Al5O12:Pr and Bi4Ge3O12 scintillators for gamma-ray detection

The scintillation properties of Lu₃Al₅O₁₂:Pr³⁺ (LuAG:Pr) single crystal grown by the Czochralski method with praseodymium concentration of 0.19 mol% were investigated. For a comparison, a good quality Bi₄Ge₃O₁₂ (BGO) single crystal grown by Bridgman method was also studied. The light yield and energy resolution were measured using photomultiplier tube (XP5200B PMT) readout. Moderate light yield of 15,900 photons per MeV was measured for the LuAG:Pr(0.19%) crystal. For 662 keV gamma rays (¹³⁷Cs source), an energy resolution of 6.5% obtained for LuAG:Pr(0.19%) is much better than that of 9.0% obtained for BGO. The light yield non-proportionality and energy resolution versus energy of gamma rays were measured and the intrinsic resolution of the crystals was determined after correcting the measured energy resolution for PMT statistics. The LuAG:Pr(0.19%) showed a good proportionality of the light yield within 5% over the energy range from 1274.5 keV down to 32 keV, which is much better than that of 14% for BGO. The photofraction was determined at 320 and 662 keV for both crystals and compared with the ratio of the cross-sections for the photoelectric effect to the total one calculated using WinXCOM program.     

Thermal decay of stable colour centres in Gd3Ga5O12 crystals

This work is devoted to an analysis of thermal decay processes of the stable colour centres (CC) created in gadolinium gallium garnet (GGG) Gd₃Ga₅O₁₂, crystals under irradiation by gamma-quanta (E=1.25 MeV, D=10⁶ Gy). An analysis of the model of CC accumulation under irradiation as well as an isochronous heating model is presented. The decay activation energy (Δ E) for O^? and F centres in GGG crystals is calculated in accordance with this model.     

Photochromic behaviour of doped Bi4Ge3O12 single crystal scintillators

The changes induced by ultraviolet (UV) illumination on the optical absorption and electron paramagnetic resonance (EPR) spectra of Bi₄Ge₃O₁₂ single crystals, doped either with Fe (and Gd) or Mn, have been followed at room temperature (RT). In both crystals several overlapping optical absorption bands develop under UV illumination, covering from 0.7 eV up to the band edge of the matrix. The optical damage can be bleached by heating the samples above RT or by illumination with visible light. Although these optical changes temporarily correlate with the variation of the Gd³⁺ and Mn²⁺ concentrations, it has been concluded that other defects are present and partially responsible for the optical damage.     

Infrared spectroscopy and lattice dynamical calculations of Gd3Al5O12, Tb3Al5O12 and Lu3Al5O12 single crystals

The infrared (IR) reflectance spectra of Gd₃Al₅O₁₂, Tb₃Al₅O₁₂ and Lu₃Al₅O₁₂ single crystals are studied for the first time. At room temperature, 15 infrared active modes for Lu₃Al₅O₁₂ and 14 for Gd₃Al₅O₁₂, Tb₃Al₅O₁₂, out of the 17 theoretically predicted, have been experimentally recorded. The complex dielectric function the refractive index, the absorption coefficient as well as the longitudinal (ω_LO) and transverse (ω_TO) frequencies of the long-wavelength T_1u modes are determined by the Kramers-Kronig transformation of the reflectance spectra. The experimental data are compared and discussed with the theoretical results obtained by the rigid ion model. Our theoretical analysis reveals that the bonds in the tetrahedra exhibit a covalent character while those in the dodecahedra almost ionic character, which is in accordance with the results for other materials of this crystal family.     

Distortion of the Ligand Environment of Gd3+ and Eu2+ Ions in Garnets: Y3Al5O12, Lu3Al5O12, and Y3Ga5O12

Physics of the Solid State - Using experimental second-rank parameters of the spin Hamiltonian of the rhombic centers Gd3+ and Eu2+ in three garnets and the superposition approximation...     

Lu2SiO5:Ce and Y2SiO5:Ce single crystals and single crystalline film scintillators: Comparison of the luminescent and scintillation properties

The paper is dedicated to development of scintillators based on the single crystalline films of Ce³⁺ doped Lu₂SiO₅ (LSO:Ce) and Y₂SiO₅ (YSO:Ce) orthosilicates grown by Liquid Phase Epitaxy method onto YSO substrates from melt-solutions based on the PbO–B₂O₃ flux. We also compare the luminescent and scintillation properties of Ce doped LSO:Ce and YSO:Ce single crystalline films with those of their single crystal counterparts, grown by the Czochralski method.     

Crystal growth,luminescence and scintillation properties of Eu2+:CeBr3 crystals

Eu²⁺:CeBr₃ crystals were grown by vertical Bridgman growth method and slight aliovalent doping of Eu²⁺ in the CeBr₃ crystal did not change the crystal structure. The X-ray stimulated luminescence, photoluminescence, decay kinetics and scintillation properties were investigated at room temperature. The X-ray stimulated luminescence spectra exhibited wide broad emission bands from 3.54 eV to 2.95 eV in the Eu²⁺:CeBr₃ crystal with high content of 620 ppm of Eu²⁺, which were the overlap of the emission bands ascribed to 5d → 4f transition of Ce³⁺ and 4f⁶5 d¹ → 4f⁷ transition of Eu²⁺, respectively. When the content of Eu²⁺ was decreased to 70 ppm, another emission band centered at 2.29 eV was observed. The photoluminescence spectra showed the energy transfer from Ce³⁺ to Eu²⁺. This decreased the Ce³⁺ emission intensity but enhanced the Eu²⁺ emission intensity. The photoluminescence decay time of Ce³⁺ emission decreased from 14 ns to 10 ns when the content of Eu²⁺ increased from 70 ppm to 620 ppm. The decay time of the emission of 525 nm did not change with the excitation wavelength and Eu²⁺ content, which could be assigned to the excitons that were bound on Eu²⁺ related centers. The light output of the Eu:CeBr₃ crystal under the excitation of ²⁴¹Am radioactive source was less than 20.2% of Tl:NaI crystal.     

Optical and scintillation properties of Sc2O3, Y2O3 and Lu2O3 transparent ceramics synthesized by SPS method

Sc₂O₃, Y₂O₃ and Lu₂O₃ transparent ceramics were prepared by the spark plasma sintering (SPS) method. After polishing, the samples were semitransparent. Their optical transmittance was 10–40% at 500 nm which corresponded with their semi-transparency. In the X-ray induced emission spectra, a broad emission peak appeared around 335 nm in each sample. For this wavelength, scintillation decay time for Y₂O₃ and Sc₂O₃ were 22 and 48 ns, respectively. The light yield of Sc₂O₃, Y₂O₃ and Lu₂O₃ was 16,200, 2600, and 200 ph/5.5 MeV-alpha, respectively, which followed from the alpha-ray induced pulse height spectra. The gamma-ray induced light yield of Sc₂O₃ was 11,500 ph/MeV, which is 1.4 times larger than that of conventional single crystal BGO (Bi₄Ge₃O₁₂) scintillator. Light yield non-proportionality and energy resolution of Sc₂O₃ were examined for the first time.     

Luminescence and scintillation properties of YAG:Ce single crystal and optical ceramics

We use various techniques to study optical and scintillation properties of Ce-doped yttrium aluminum garnet, Y₃Al₅O₁₂ (YAG:Ce), in the form of a high-quality industrial single crystal. This was compared to optical ceramics prepared from YAG:Ce nanopowders. We present experimental data in the areas of optical absorption, radioluminescence, scintillation decay, photoelectron yield, thermally stimulated luminescence and radiation-induced absorption. The results point to an interesting feature—the absence of antisite (Y_Al, i.e. Y at the Al site) defects in optical ceramics. The scintillation decay of the ceramics is faster than that of the single crystal, but its photoelectron yield (measured with 1 μs integration time) is about 30-40% lower. Apart from the photoelectron yield value the YAG:Ce optical ceramic is fully comparable to a high quality industrial YAG:Ce single crystal and can become a competitive scintillator material.     

Investigation of structural features of the Y3Al5O12: Ce3+/Lu2O3 crystal phosphors formed by the colloidal chemical method

The specific features of the crystal structure of crystal phosphors Y₃Al₅O₁₂: Ce³⁺/Lu₂O₃ (Lu₂O₃: Ce) synthesized by the colloidal chemical method have been investigated by neutron diffraction at room temperature. The influence of the method used for introducing Lu₂O₃ into the system on the structure and luminescence properties of the samples has been analyzed. The investigation has revealed that the spectra of the samples prepared under the most nonequilibrium conditions are characterized by the Stokes shift and high photoluminescence intensity. This has been explained by the disorder of their crystal structure due to the formation of stable associates of defects.