Determination of rifampicin based on fluorescence quenching of GSH capped CdTe/ZnS QDs

Aqueous glutathione (GSH)-capped CdTe/ZnS QDs with the diameter of 3–4 nm were synthesized. The fluorescence of CdTe/ZnS QDs at 577 nm was quenched in the presence of rifampicin (Rfp), with excitation wavelength at 350 nm. The mechanism of the interaction of CdTe/ZnS QDs with Rfp was investigated. Under the optimal conditions, the calibration plot of ln(F₀/F) was linear in the range 0.83–56 μg mL^?1 with concentration of Rfp, and the detection limit was 0.25 μg mL^?1. The proposed method was successfully applied to the determination of Rfp in its commercial capsules, and satisfactory results were obtained. The recovery of the method was in the range 98.6–103.2%.     

High efficiency antireflection coating in MWIR region (3.6–4.9 μm) simultaneously effective for Germanium and Silicon optics

Antireflection coatings have critical importance in thermal imaging system working in MWIR region (3–5 μm) since optics of high refractive index materials are used. Germanium (Ge) and Silicon (Si) optics are used extensively in the MWIR thermal systems. In this paper a study has been carried out on the design and fabrication of multi-substrate antireflection coating effective for Germanium and Silicon optics in MWIR (3.6–4.9 μm) region. The wave band 3.6–4.9 μm is chosen for the reported work because detector system used in MWIR region has a band selection filter effective in the same wavelength region and atmospheric transmission window in MWIR region is effective in 3–5 μm spectral band. Comprehensive search method was used to design the multilayer stack on the substrate. The coating materials used in the design were Germanium (Ge), Hafnium oxide (HfO₂) and Y-Ba-Fluoride (IR-F625). The fabrication of coating was made in a coating plant fitted with Cryo pump system and residual gas analyzer (RGA). The evaporation was carried out at high vacuum (2–6 × 10^?6 mbar) with the help of electron beam gun system and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 98.5% average transmission in 3.6–4.9 μm band for Germanium and Silicon optics. This work will be helpful in reducing the plant operation time, material and power consumption, as two different kinds of optics are simultaneously coated in a single coating cycle.     

Realization of compatible stealth material for infrared,laser and radar based on one-dimensional doping-structure photonic crystals

To inhibit the radiant infrared energy between 8 and 14 μm, which is the infrared atmospheric window, and decrease the echo power of detecting laser and radar, to achieve compatible stealth, a doping structural one-dimensional photonic crystal (1-D PC) with Ge, ZnSe and Si was fabricated; and then combine it with radar absorbing material (RAM) to make a compound. After that, the reflection spectra of this compound was tested, and the result shows a high average reflectance (89.5%) in 8–14 μm waveband, and a reflective valley (39.8%) in the wavelength of 10.6 μm, which is the wavelength of CO₂ laser; and the reflectance in radar band shows that at high frequency, especially between 7.8 and 18 GHz, the radar power is strongly absorbed by this material and the reflected energy attenuate over 10 dB within the range from 11.1 GHz to 18.3 GHz, even 24.5 dB to the most in the frequency of 14.6 GHz.     

Thorium free antireflection coating in MWIR region on Silicon optics

Most infrared transmitting optics have high refractive indices which in turn have high per surface reflection loss. So antireflection coating has very important role in increasing the transmission in the desired wavelength region. In this paper a study has been carried out on the design and fabrication of Thorium free antireflection coating effective for Silicon substrate in MWIR (3.6–4.9 μm) region. The wave band 3.6–4.9 μm is chosen for the reported work because the detected system used in MWIR region has a band selection filter effective in the same wavelength region. Comprehensive search method was used to design the multilayer stack on Silicon substrate. The coating materials used in the design were Germanium (Ge) and Silicon dioxide (SiO₂). The fabrication of coating was made in a coating plant fitted with Cryo pump system and Residual Gas Analyzer. The evaporation was carried out at high vacuum (2–6 × 10–6 mbar) using Electron Beam Gun and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 96% average transmission in 3.6–4.9 μm band which withstood MIL-F-48616 environmental testing. This work provides an alternate antireflection coating on Silicon by replacing radioactive Thorium Fluoride, used as a coating material in most IR antireflection coating designs.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

The effects of atomic hydrogen and polyimide passivation on R₀A product of type-II InAs/GaSb superlattice photo detectors for cut-off wavelength of both 6.5 μm and 12 μm were investigated. Low temperature current–voltage measurement shows that the use of atomic hydrogen during molecular beam epitaxy growth can improve R₀A product by 260% for 6.5 μm cut-off superlattice diodes and by 50% for 12 μm cut-off ones. The R₀A product of polyimide-passivated diodes with 12 μm cut-off is about 80% higher than those un-passivated ones. Wannier–Stark oscillations at higher reverse bias were observed for polyimide-passivated superlattice diodes with 12 μm cut-off. No Wannier–Stark oscillations were observed for un-passivated superlattice diodes, indicating that surface leakage current dominates in un-passivated diodes, while intrinsic dark current mechanisms such as tunneling and diffusion current dominate in polyimide-passivated diodes.     

Effect of CuI on the formation and properties of Te-based far infrared transmitting chalcogenide glasses

A series of Ge–Te–CuI far infrared transmitting chalcohalide glasses were prepared by traditional melt-quenching method and the glass-forming region was determined. Properties measurements include density, DTA, XRD, SEM, Vis–NIR and infrared (IR) transmission spectra. The results show that with the addition of CuI, the glass-forming ability is improved and nearly 30 mol% CuI can be dissolved into the Ge₂₀Te_80?x(CuI)_x glass system. The density and glass transition temperature of Ge–Te–CuI chalcohalide glasses are within the range 5.459–5.960 g cm^?3 and 150–184 °C, respectively. These glasses all have wide optical transmission window from 1.8 to 25 μm and offer an alternative solution for far infrared transmitting materials.     

Emission characteristics of SPAN-80 activated ZnS nanocolloids

Quantum surface effects (new emission bands, blueshifts, intensity enhancement) were observed in SPAN-80 activated ZnS nanocolloids and explained in terms of time-dependent density functional theory. The experimental evidences were demonstrated for both undoped and Cu, Mn-doped colloidal phases. The photoluminescence spectra of these materials showed a new green band at 520 nm (ZnS:Cu) and a yellow-orange band at 576 nm (ZnS:Mn) besides a blue band at 465 nm. All bands lie in the visible region and are blueshifted, show sharp emissions with narrow widths and have approximately 20-times stronger intensities in comparison with those of the bulk samples. The time-resolved luminescence spectra showed that the life-times of free electrons were 0.12 μs and 1.9 ms in ZnS:Cu and ZnS:Mn correspondingly.     

Design and fabrication of nanometric ZnS/Ag/MoO3 transparent conductive electrode and investigating the effect of annealing process on its characteristics

In this paper, a ZnS/Ag/MoO₃ (ZAM) nano-multilayer structure is designed theoretically and optimum thicknesses of each layer are calculated. ZnS/Ag/MoO₃ multilayer films with optimized thicknesses have also been fabricated on glass substrates by thermal evaporation method at room temperature. The structural, electrical and optical properties of ZnS/Ag/MoO₃ multilayer are investigated with respect to the variation of annealing temperature. X-ray diffraction patterns show that increase in annealing temperature increases the crystallinity of the structures. High-quality multilayer films with the sheet resistance of 4.5 Ω/sq and the maximum optical transmittance of 85% at 100 °C annealing temperature are obtained. The allowed direct band gap for annealing at different temperatures is estimated to be in the range of 3.37–3.79 eV. The performance of the ZAM multilayer films are evaluated using a predefined figure of merit. These multilayer films can be used as transparent conductive electrodes in optoelectronic devices such as solar cells and organic light emitting diodes.     

Synthesis and characterization of ZnS:Ni-NPs loaded on AC derived from apple tree wood and their applicability for the ultrasound assisted comparative adsorption of cationic dyes based on the experimental design

The applicability of ZnS:Ni nanoparticles loaded on activated carbon derived from apple tree wood (ZnS:Ni-NPs-ACATW) for the adsorption of Methylene Blue (MB) and Janus Green B (JGB) dyes in single system from water solution has been described. The synthesized adsorbent characterized and identified by UV–Vis, FE-SEM, EDX, TEM, FTIR and XRD. The influences of operation parameters including initial MB or JGB concentration (9.0–33.0 mg L⁻¹), pH (4.0–10.0), extent of adsorbent (0.08–0.12 g) and sonication time (4.0–8.0 min) investigated and subsequently best operational condition optimized by central composite design (CCD) combined with response surface methodology (RSM) and desirability function (DF) using STATISTICA 10.0 software. At optimum conditions, maximum MB and JSB adsorption onto ZnS:Ni-NPs-ACATW, i.e. 99.57% ± 1.34 and 98.70% ± 2.01, respectively was achieved pH of 7.0, 0.11 g adsorbent, 14 and 28 mg L⁻¹ of MB and JSB concentration respectively and 8 min sonication time. Experimental data were modelled by Langmuir, Freundlich, Temkin and Dubinin-Radushkevich (D-R) isotherms. Langmuir isotherm and monolayer adsorption capacity of MB and JSB was found to be 21.79 and 28.01 mg g⁻¹ respectively. The regression results strongly support more contribution of pseudo-second-order model for more accurate and repeatable representation of kinetic data. These results reveal that ZnS:Ni-NPs-ACATW could be useful as agents to efficiently remove dyes (JGB and MB) from contaminated water and can be very well recommended for wastewater remediation and control of environmental pollution.     

Preparation and properties of ceramic coating on Q235 carbon steel by plasma electrolytic oxidation

Ceramic coating was achieved on Q235 carbon steel by PEO (plasma electrolytic oxidation, PEO) without any pretreatment in sodium aluminate system. The discharge process as well as the accompanied surface morphology evolution was analyzed. The phase and elemental composition of the coatings were also investigated. The corrosion, mechanical and tribological properties of the ceramic coating were primarily studied. It is found that the coating surface was porous and the thickness of the coating was about 120 μm. The coating mainly consisted of FeAl₂O₄, Fe₃O₄ and a little γ-A1₂O₃. The corrosion current of the coated sample was 3.082 × 10⁻⁷ A/cm², which was decreased by two orders of magnitude compared with the uncoated one. The micro hardness of the ceramic coating was 1210 Hv, which was about three times as that of the uncoated sample. The friction coefficient of coated sample was also well improved. Investigations revealed that PEO provided a promising technique for preparation of protective ceramic coatings on steels.     

Multi-spectral antireflection coating on zinc sulphide simultaneously effective in visible,eye safe laser wave length and MWIR region

In recent years multi-spectral device is steadily growing popularity. Multi-spectral antireflection coating effective in visible region for sighting system, laser wavelength for ranging and MWIR region for thermal system can use common objective/receiver optics highly useful for state of art thermal instrumentation. In this paper, design and fabrication of antireflection coating simultaneously effective in visible region (450–650 nm), Eye safe laser wave length (1540 nm) and MWIR region (3.6–4.9 μm) has been reported. Comprehensive search method of design was used and the number of layers in the design was optimised with lowest evaluated merit function studied with respect to various layers. Finally eight-layer design stack was established using hafnium oxide as high index layer and silicon-di-oxide as low index coating material combination. The multilayer stack had been fabricated by using electron beam gun evaporation system in Symphony 9 vacuum coating unit. During layer deposition the substrate was irradiated with End-Hall ion gun. The evaporation was carried out in presence of oxygen and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 85% average transmission from 450 to 650 nm in visible region, 95% transmission at 1540 nm and 96% average transmission from 3.6 to 4.9 μm in MWIR region.     

Marine environment compatible antireflection coating with nanotop layer on silicon optics

Antireflection coating on silicon optics have crucial importance in thermal device working in 3.6–4.9 μm wavelength region. When the thermal device is used in marine environment, the optics face harsh saline weather condition compared to normal field environment. This deteriorates coated optics and to improve mechanical strength of the coating, a nanotop layer on the antireflection coating has been developed. In this paper a study has been carried out to improve marine environment compatibility by employing a nanolayer on the top of antireflection coating on silicon optics. Optimac synthesis method was used to design the multilayer stack on the substrate with germanium and IR-F625 as high/low refractive index respectively and the layer number was restricted to four layers. The top nanolayer was 60 ± 2 nm thick hafnium dioxide layer developed with ion assisted deposition (End–Hall) on the optics during coating process. The deposition of multilayer coating was carried out inside the coating plant fitted with cryo pump and residual gas analyzer. The evaporation was carried out at high vacuum (2–6 × 10⁻⁶ mbar) using electron beam gun and layer thicknesses were measured with crystal monitor. The average transmission achieved was 97% in the spectral band of 3.6–4.9 μm with a hardness of 9.7 GPa on the coated optics.     

Temperature measurements of high-temperature semi-transparent infrared material using multi-wavelength pyrometry

Temperature measurements inside semi-transparent materials are important in many fields. This study investigates the measurements of interior temperature distributions in a one-dimensional semi-transparent material using multi-wavelength pyrometry based on the Levenberg–Marquardt method (LMM). The investigated material is semi-transparent Zinc Sulfide (ZnS), an infrared-transmitting optical material operating at long wavelengths. The radiation properties of the one-dimensional semi-transparent ZnS plate, including the effective spectral–directional radiation intensity and the proportion of emitted radiation, are numerically discussed at different wavelengths (8.0–14.0 μm) and temperature distributions (400–800 K) to provide the basic data for the temperature inversion problem. Multi-wavelength pyrometry was combined with the Levenberg–Marquardt method to resolve the temperature distribution along the radiative transfer direction based on the line-of-sight spectral radiation intensities at multiple wavelengths in the optimized spectral range of (11.0–14.0 μm) for the semi-transparent ZnS plate. The analyses of the non-linear inverse problem show that with less than 5.0% noise, the inversion temperature results using the Levenberg–Marquardt method are satisfactory for linear or Gaussian temperature distributions in actual applications. The analysis provides valuable guidelines for applications using multi-wavelength pyrometry for temperature measurements of semi-transparent materials.     

Microstructures and soft magnetic properties of as-deposited Fe–Sm–O thin films

The influences of O₂ partial pressure on saturation magnetization, coercivity and effective permeability of the as-deposited Fe–Sm–O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The nanocrystalline Fe_83.4Sm_3.4O_13.2 thin film fabricated at O₂ partial pressure of 5% exhibited the best magnetic softness with a saturation magnetization of 1.43 MA/m, coercivity of 65.2 A/m and effective permeability of about 2600 in the frequency range from 0.5 to 100 MHz. The electrical resistivity of Fe_83.4Sm_3.4O_13.2 was 130 μΩ cm. The microstructures and electrical resistivity were investigated in this work.     

Two and four photon absorption and nonlinear refraction in undoped,chromium doped and copper doped ZnS quantum dots

The ZnS quantum dots (QDs) with Cr and Cu doping were synthesized by chemical co-precipitation method. The nanostructures of the prepared undoped and doped ZnS QDs were characterized by UV–vis spectroscopy, Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sizes of QDs were found to be within 3–5 nm range. The nonlinear parameters viz. Two photon absorption coefficient (β₂), nonlinear refractive index (n₂), third order nonlinear susceptibility (χ³) at wavelength 532 nm and Four photon absorption coefficient (β₄) at wavelength 1064 nm have been calculated by Z-scan technique using nanosecond Nd:YAG laser in undoped, Cr doped and Cu doped ZnS QDs. Higher values of nonlinear parameters for doped ZnS infer that they are potential material for the development of photonics devices and sensor protection applications.     

Deposition and optical properties of nanocrystalline ZnS thin films by a chemical method

Highly transparent and adherent nanocrystalline large-area ZnS thin films were grown on the slide glass and the SnO₂-coated glass substrate by chemical deposition using an aqueous solution containing zinc sulfate and thioacetamide. The films were characterized by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, UV–Vis transmission and photoluminescence. The SEM morphologies of the films revealed a string-like structure formed by the smaller particle on the ZnS film surface. The average particle size was confirmed, using XRD analysis and TEM observation, to be about 3–4 nm.     

Infrared absorption cross sections for methanol

Infrared absorption cross sections for methanol, CH₃OH, have been determined near 3.4 and 10 μm from spectra recorded using a high-resolution FTIR spectrometer (Bruker IFS 125HR) and a multipass cell with a maximum optical path length of 19.3 m. Methanol/dry synthetic air mixtures were prepared and spectra were recorded at 0.015 cm^?1 resolution (calculated as 0.9/MOPD) at a number of temperatures and pressures (50–760 Torr and 204–296 K) appropriate for atmospheric conditions. Intensities were calibrated using composite methanol spectra taken from the Pacific Northwest National Laboratory (PNNL) IR database. The new measurements in the 10 μm region indicate problems with the existing methanol spectroscopic line parameters in the HITRAN database, which will impact the accuracy of satellite retrievals.     

320 × 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice

Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice are demonstrated on GaSb substrate. The material is grown with 50% cut-off wavelength of 2.9 μm and 5.1 μm for the blue channel and red channel, separately at 77 K. 320 × 256 focal plane arrays fabricated in this wafer is characterized. The peak quantum efficiency without antireflective coating is 37% at 1.7 μm under no bias voltage and 28% at 3.2 μm under bias voltage of 130 mV. The peak specific detectivity are 1.51 × 10¹² cm·Hz^1/2/W at 2.5 μm and 6.11x10¹¹ cm·Hz^1/2/W at 3.2 μm. At 77 K, the noise equivalent difference temperature presents average values of 107 mK and 487 mK for the blue channel and red channel separately.     

Temperature and concentration quenching of mid-IR photoluminescence in iron doped ZnSe and ZnS laser crystals

Concentration dependences of the mid-IR kinetic of luminescence at ⁵E?⁵T₂ transition in Fe:ZnSe and Fe:ZnS laser samples were studied in 14–300 K temperature ranges. Radiation lifetime in Fe:ZnSe samples measured using low doped samples with iron concentration 0.1×10¹⁸ cm^?3 was estimated to be 57 μs. The magnetic susceptibility for higher doped (C_Fe=38 and 112×10¹⁸ cm^?3) Fe:ZnSe samples was found to consist of a paramagnetic Curie–Weiss behavior arising from the weakly interacting Fe²⁺ ions and a diamagnetic ZnSe contribution plus a temperature-independent, field-dependent contribution possibly arising from very small amounts of aggregated Fe.