Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer

The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (R_V), noise voltage (V_noise), noise equivalent power (NEP), and detectivity (D^*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 10³ V/W, 1.25 × 10⁻⁶ V Hz^1/2, 1.1 × 10⁻⁹ W and 1.9 × 10⁸ cm Hz^1/2 W⁻¹ at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τ_T was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices.     

High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications

This paper will describe the first-of-a-kind development and demonstration of dilute nitride strained layer superlattice detectors with detectivity as high as 4 × 10¹⁰ cm Hz^1/2/W and cut-off wavelength of 11-μm for an LWIR design and a cut-off wavelength of 22-μm for a VLWIR design. The developed dilute nitride SLS detectors are based on ultra-low leakage dilute nitride epitaxial layers and/or strained layer superlattices (SLS) of InAs/InAsSbN and InAs/GaInSbN that could enable high VLWIR detectivities at elevated temperatures and at low cost.     

Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of −170 mV, respectively. And the dark current density under 0 and −170 mV of applied bias are 1.076 × 10⁻⁵ A/cm² and 2.16 × 10⁻⁴ A/cm². The specific detectivity of MWIR band and LWIR band are 2.15 × 10¹² cm·Hz^1/2/W at 3.2 μm and 2.31 × 10¹⁰ cm·Hz^1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 10¹⁰ cm·Hz^1/2/W at the wavelength range from 4.3 μm to 10.2 μm under −170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of −170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K.     

320 × 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice

Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice are demonstrated on GaSb substrate. The material is grown with 50% cut-off wavelength of 2.9 μm and 5.1 μm for the blue channel and red channel, separately at 77 K. 320 × 256 focal plane arrays fabricated in this wafer is characterized. The peak quantum efficiency without antireflective coating is 37% at 1.7 μm under no bias voltage and 28% at 3.2 μm under bias voltage of 130 mV. The peak specific detectivity are 1.51 × 10¹² cm·Hz^1/2/W at 2.5 μm and 6.11x10¹¹ cm·Hz^1/2/W at 3.2 μm. At 77 K, the noise equivalent difference temperature presents average values of 107 mK and 487 mK for the blue channel and red channel separately.     

A low noise 2 × 16 Ge:Sb focal-plane array: Paving the way for large format FPAs for far IR astronomy

Future astronomical instruments call for large format and high sensitivity far infrared focal-plane arrays to meet their science objectives. Arrays as large as 128 × 128 with sensitivities equal to or better than 10⁻¹⁸ W/√Hz are set as targets for the far IR instruments to be developed within the next 10 years. These seemingly modest goals present a not-so-modest quantum leap for far IR detector technology whose progress is hampered by a number of complexities; chief among them the development of low noise readouts operating at deep cryogenic temperatures and a viable hybridization scheme suitable for far IR detectors. In an effort to incrementally develop large-format photoconductor arrays, we have fabricated a 2 × 16 Ge:Sb array using the SBRC190 readout – a cryogenic 1 × 32 CTIA readout multiplexer initially developed for SOFIA’s AIRES instrument. In this paper we report the results of the extensive parametric tests performed on this array showing an impressive noise performance of 2.2 × 10⁻¹⁸ W/√Hz and a DQE of 0.41 despite some design limitations. With such an encouraging performance, this prototype array will serve as a platform for our future developmental effort.     

Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50 Å and 40 Å were compared. A 2–8 μm band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77 K. The specific peak detectivity D1 be 0.8 × 10⁹ Jones for one of the detectors.     

Low-bias,high-temperature operation of an InAs–InGaAs quantum-dot infrared photodetector with peak-detection wavelength of 11.7 μm

We report on a low-bias InAs–InGaAs quantum-dot (QD) infrared photodetector (QDIP) with operating temperature of 150 K. Longwave-infrared (LWIR) detection at the peak wavelength of 11.7 μm was achieved. Peak specific photodetectivity D¹ of 1.7 × 10⁹ and 9.0 × 10⁷ cm Hz^1/2/W were obtained at the operating temperature T of 78 K and 150 K, respectively. A large photoresponsivity of 8.3 A/W and high photoconductive gain of 1100 were demonstrated at a low-bias voltage of V = 0.5 V at T = 150 K. The low-bias and high-temperature performance demonstration based on InAs–GaAs material systems indicates that the QDIP technology is promising for LWIR sensing and imaging.     

Ion-implanted Ge:B far-infrared blocked-impurity-band detectors

Ge blocked-impurity-band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking contact and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be ∼4 × 10¹⁶ cm⁻³. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to ∼45 cm⁻¹, clearly showing the formation of an impurity band. Under low background testing conditions these devices attain a responsivity of 0.12 A/W and NEP of 5.23 × 10⁻¹⁵ W/Hz^1/2.     

Lead free KNN/P(VDF-TrFE) 0–3 pyroelectric composite films and its infrared sensor

(K_0.5Na_0.5)NbO₃ (KNN)/[P(VDF-TrFE)70:30] composite thick films with different KNN weight ratios have been fabricated and the effect of KNN mass content on the material structure and properties have been studied in this paper. Properties of the infrared sensor based KNN/[P(VDF-TrFE)70:30] composite thick film were also systematically studied. It was found that the sample containing 30 wt.% KNN show optimal properties for pyroelectric appliance and the highest pyroelectric coefficient was 63 μCm⁻² K⁻¹. Infrared sensors using 30 wt.% KNN-70 wt.%[P(VDF-TrFE)70:30] show highest detectivity (D¹ = 3.21 × 10⁸ cm Hz^1/2 W⁻¹) at 137.3 Hz, indicating it is an promising candidate in lead-free quick response infrared detectors.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

An infrared pyroelectric detector improved by cool isostatic pressing with cup-shaped PZT thick film on silicon substrate

In this paper, we presented a new pyroelectric detector with back to back silicon cups and micro-bridge structure. The PZT thick film shaped in the front cup was directly deposited with designed pattern by electrophoresis deposition (EPD). Pt/Ti Metal film, which was fabricated by standard photolithography and lift-off technology, was sputtered to connect the top electrode and the bonding pad. The cold isostatic press (CIP) treatment could be applied to improve the pyroelectric properties of PZT thick film. The infrared (IR) properties the CIP-optimized detector were measured. The voltage responsivity (R_V) was 4.5 × 10² V/W at 5.3 Hz, the specific detectivity (D^*) was greater than 6.34 × 10⁸ cm Hz^1/2 W⁻¹ (frequency > 110 Hz), and the thermal time constant was 51 ms, respectively.     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.     

Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication

In this paper we report an analytical modeling of N⁺-InP/n⁰-In_0.53Ga_0.47As/p⁺-In_0.53Ga_0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS? and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS? from SILVACO® international. The photodetector exhibits a high quantum efficiency ～90%, responsivity ～1.152–1.2 A/W in the same order as reported experimentally by others, specific detectivity ～5 × 10⁹ cm Hz^1/2 W^?1at wavelength 1.55–1.65 μm, dark current of the order of 10^?11 A at reverse bias of 1.5 V and 10^?13–10^?12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5 × 10^?14 W.     

Mid-wave QWIPs for the [3–4.2 μm] atmospheric window

We report two approaches using Quantum Well Infrared Photodetectors for detection in the [3–4.2 μm] atmospheric window. Taking advantage of the large band gap discontinuity we demonstrated a strained AlInAs/InGaAs heterostructure on InP. The optical coupling in this structure has been experimentally and numerically investigated. The results show that the coupling is mainly due to guided modes. The second approach is based on double barrier strained AlGaAs/AlAs/GaAs/InGaAs active layers on GaAs. The segregation of the elements III in these structures has been investigated using a transmission electron microscope. The results show a strong modification of the conduction band profile. We demonstrate peak wavelengths at 3.9 μm for the InP based detector and 4.0 μm for the GaAs based detector. We report a background limited peak detectivity (2π field of view, 300 K background) at 4.0 μm of about 2 × 10¹¹ cm Hz^1/2 W^?1 at 77 K, and 1.5 × 10¹¹ cm Hz^1/2 W^?1 at 100 K.     

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Using double heterojunction structure with linearly graded In_xAl_1–xAs as buffer layer and In_0.9Al_0.1As as cap layer, wavelength extended In_0.9Ga_0.1As detectors with cutoff wavelength of 2.88 μm at room temperature have been grown by using gas source molecular beam epitaxy, their characteristics have been investigated in detail and compared with the detectors cutoff at 2.4 μm with similar structure as well as commercial InAs detectors. Typical resistance area product R₀A of the detectors reaches 3.2 Ω cm² at 290 K. Measured peak detectivity reaches 6.6E9 cm Hz^1/2/W at room temperature.     

High quality mid-wavelength infrared InAs/GaSb superlattices by exploring the optimum molecular beam epitaxy growth process

In this paper we report on the growth of mid-wavelength infrared superlattice materials by molecular beam epitaxy. We focused on the effects of process parameters, such as arsenic beam equivalent pressure and shutter sequences, on the key material properties, such as the lattice mismatch and the surface morphology. Though a smaller As beam equivalent pressure helps to reduce the lattice mismatch between the superlattice and the GaSb substrate, the As beam equivalent pressure itself has a lower limit below which the material’s surface morphology will degrade. To achieve fully lattice-matched superlattice materials, a novel shutter sequence in the growth process was designed. With well-designed interface structures, a high quality P-I-N superlattice mid-infrared detector structure was realized. At 77 K the dark current density at −50 mV bias was 2.4 × 10⁻⁸ A/cm² and the resistance-area product (RA) at maximum (−50 mV bias) was 2.4 × 10⁶ Ω cm², and the peak detectivity was then calculated to be 9.0 × 10¹² cm Hz^1/2/W. The background limited infrared photodetector (BLIP) level can be achieved at a temperature of 113 K.     

Fast and wide-band response infrared detector using porous PZT pyroelectric thick film

Porous lead zirconate titanate (PbZr_0.3Ti_0.7O₃, PZT30/70) thick films and detectors for pyroelectric applications have been fabricated on alumina substrates by screen-printing technology. Low temperature sintering of PZT thick films have been achieved at 850 °C by using Li₂CO₃ and Bi₂O₃ sintering aids. The microstructure of PZT thick film has been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric properties were measured using HP 4284 at 1 kHz under 25 °C. The permittivity and loss tangent of the thick films were 94 and 0.017, respectively. Curie temperature of PZT thick film was 425 °C as revealed by dielectric constant temperature measurement. The pyroelectric coefficient was determined to be 0.9 × 10⁻⁸ Ccm⁻² K⁻¹ by dynamic current measurement. Infrared detector sensitive element of dual capacitance was fabricated by laser directly write technology. Detectivity of the detectors were measured using mechanically chopped blackbody radiation. Detectivity ranging from 1.23 × 10⁸ to 1.75 × 10⁸ (cm Hz^1/2 W⁻¹) was derived at frequency range from 175.5 Hz to 1367 Hz, and D^*’s −3 dB cut-off frequency bandwidth was 1.2 kHz. The results indicate that the infrared detectors based on porous thick films have great potential applications in fast and wide-band frequency response conditions.     

Compact sensor for methane detection in the mid infrared region based on Quartz Enhanced Photoacoustic Spectroscopy

A compact system for methane sensing based on the Quartz-Enhanced Photoacoustic Spectroscopy technique has been developed. This development has been taken through two versions which were based respectively on a Fabry Perot quantum wells diode laser emitting at 2.3 μm, and on a quantum wells distributed feedback diode laser emitting at 3.26 μm. These lasers emit near room temperature in the continuous wave regime. A spectrophone consisting of a quartz tuning fork and one steel microresonator was used. Second derivative wavelength modulation detection was used to perform low methane concentration measurements. The sensitivity and the linearity of the QEPAS sensor were studied. A normalized noise equivalent absorption coefficient of 7.26 × 10⁻⁶ cm⁻¹ W/Hz^1/2 was achieved. This corresponds to a detection limit of 15 ppmv for 12 s acquisition time.     

Planar sulfur-doped silicon detectors for high-speed infrared thermography

Planar extrinsic sulfur-doped silicon detectors for infrared (IR) semiconductor-discharge gap image converters intended for use in high-speed thermography of remote objects have been developed. The detectors were fabricated by high-temperature diffusion of sulfur into silicon wafers from the vapor phase. The dependence of doping efficiency on the sulfur vapor pressure in the course of diffusion was analyzed. The detector fabrication technology was optimized to meet the specific requirements for their operation in the microdischarge devices considered. The detectors were tested in a laboratory setup comprising a blackbody source of IR light, an image converter, and a pulsed CCD camera for recording the converted images. The converter equipped with the detector can provide imaging of objects heated to a temperature, T_min ≈ 200 °C, with a temporal resolution on the order of 10^?6 s and spatial resolution of about 5 lines/mm.     

A thin film magnetic field sensor of sub-pT resolution and magnetocardiogram (MCG) measurement at room temperature

We developed a very sensitive high-frequency carrier-type thin film sensor with a sub-pT resolution using a transmission line. The sensor element consists of Cu conductor with a meander pattern (20 mm in length, 0.8 mm in width, and 18 μm in thickness), a ground plane, and amorphous CoNbZr film (4 μm in thickness). The amplitude modulation technique was employed to enhance the magnetic field resolution for measurement of the high-frequency field (499 kHz), a resolution of 7.10×10^?13 T/Hz^1/2 being achieved, when we applied an AC magnetic field at 499 kHz. The phase detection technique was applied for measurement of the low frequency field (around 1 Hz). A small phase change was detected using a dual mixer time difference method. A high phase change of 130°/Oe was observed. A magnetic field resolution of 1.35×10^?12 T/Hz^1/2 was obtained when a small AC field at 1 Hz was applied. We applied the sensor for magnetocardiogram (MCG) measurement using the phase detection technique. We succeeded in measuring the MCG signal including typical QRS and T waves, and compared the MCG with a simultaneously obtained conventional electrocardiogram (ECG) signal.