Monoclinic HfO2:Eu X-ray phosphor

HfO₂ and HfO₂:Eu powders were synthesized with Pechini method at temperatures in the range of 600–1500 °C. Structural, radioluminescence and photoluminescence properties of the powders were investigated. The highest light output of about 20% of the efficiency of commercial GOS:Eu was found for materials containing 0.5% of Eu and prepared at 1500 °C. The data shows, that further improvement of light output could be obtained if materials are processed at yet higher temperatures. Emission spectra indicate that Eu³⁺ experiences variety of symmetries of its surroundings. Undoped materials produce broad band emission peaking at 480 nm and showing a significant afterglow.     

On the nature of slow emission at 3.8 eV in crystalline α-Al2O3-δ

A comparative research of thermoluminescence, X-ray luminescence, and photoluminescence in initial and thermo-optically treated and X-ray irradiated anion-defective corundum (α-Al₂O_3-δ) samples has been carried out. A new type of center has been identified emitting near 3.6–3.8 eV up to 800 K, excited at 5.9 eV, and having a lifetime of about 300 ms at 300 K in the excited state. This type of centers was found to be created only at thermo-optical treatment, including ultraviolet irradiation with λ ≈ 280–320 nm and simultaneous heating of α-Al₂O_3-δ samples to 550–670 K, and be destructed thermally at T ≥ 670 K or when exposed to X-ray radiation or light with quantum energies of 5.9 and 3.1 eV. The center type found is assumed to have a complex structure consisting of interstitial aluminum, anion and cation vacancy, and slightly displaced regular ions in the nearest surrounding.     

The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Schottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (Φ_B0) values were obtained for higher temperatures, whereas the ideality factor exhibited the opposite behavior. This was associated with a barrier inhomogeneity at the Ti/GaAs interface, which has a Gaussian distribution (GD). The mean barrier height values calculated from the modified Richardson and Φ_B0 - q/2 kT plots were found to be 0.584 eV and 0.575 eV in the temperature range of 80–160 K. They were found as 1.041 eV and 1.033 eV between 180 K and 300 K, respectively. The modified Richardson constant value, on the other hand, was calculated as 22.06 A cm⁻² K⁻² (80–160 K) and 13.167 A cm⁻² K⁻² (180–300 K). These values are higher than the theoretical value for n-GaAs, which is 8.16 A cm⁻² K⁻². This difference may stem from intense inhomogeneity at the Ti/n-GaAs interface.     

Electric field involved transport at elevated temperature in nanocrystalline silicon carbide nitride (nc-SiCN) thin films for harsh environment applications

The present study represents a systematic temperature dependent charge transport and dielectric properties of nanocrystalline silicon carbide nitride (nc-SiCN) thin films grown on Pt/Ti/SiO₂/Si substrate. A large negative temperature coefficient of resistance (TCR) ranging from 6200 to 2300 ppmK^-1 in the temperature range 300–773 K, suggests that the nc-SiCN thin films could be useful for futuristic thermal-based sensors. The current density vs. electric field (J-E) characteristics was measured at different temperatures (300–673 K). Detailed J-E analysis revealed an ohmic conduction at the low applied electric field (<65 kV/cm) within the entire temperature range. However, at high electric field (>65 kV/cm), space charge limited conduction (SCLC) mechanism was found to be dominating in low measurement temperature (300–473K), whereas, a transition from SCLC mechanism to Poole-Frenkel mechanism was observed with further increment in the temperature beyond 473 K. The temperature invariant dielectric tunability (n_r ∼10%) and low zero electric field leakage current density (J ∼10⁻⁷A/cm²) at 673 K temperature, demonstrates the feasibility of nc-SiCN thin films for tunable device applications in the high-temperature and harsh environment.     

Dielectric relaxation and magnetic characteristics of the Bi0.5La0.5MnO3 ceramics

The complex permittivity ?* of ceramics of bismuth-lanthanum manganite Bi_0.5La_0.5MnO₃ has been measured in ranges of temperatures T = 10–200 K and frequencies f = 10²–10⁶ Hz. Clearly pronounced regions of the non-Debye dielectric relaxation have been revealed at low temperatures (T < 90 K). To describe them, the possible mechanisms have been proposed and discussed. The temperature dependences of magnetization, the anomalous behavior of which can be associated with the phase transition from the paramagnetic phase into the ferromagnetic phase occurring at T ～ 40–80 K, have been measured in the temperature range T = 10–120 K.     

Optical properties and radiation response of Ce:SrHfO3 prepared by the Spark Plasma Sintering Method

SrHfO₃, Ce_0.02Sr_0.98HfO₃ (Ce:SHO) and Ce_0.02Al_0.02Sr_0.96HfO₃ (Ce/Al:SHO) ceramics were prepared by Spark Plasma Sintering (SPS) in order to search for a new material with a high-effective atomic number. Here, SrHfO₃ has high melting point, and single crystal cannot be grown by micro pulling down method (which usually enables growth within less than 1 day) due to its high melting temperature. Since SPS can be used for preparation of the ceramics within roughly 10 h at temperatures lower than the melting point, we use the SPS method for material preparation. Ce:SHO had a low transparency of less than 0.1% below 540-nm, while Ce/Al:SHO had a wider transparent region including the emission wavelength region of Ce³⁺ (∼395 nm). Ce/Al:SHO ceramics had light output of ∼4000 photons/MeV, and decay time of 21.6 ± 0.9 ns.     

Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

Atomic layer deposition of HfO₂ on unmodified graphene from HfCl₄ and H₂O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180°C. HfO₂ was also deposited in a two-step temperature process where the initial growth of about 1 nm at 170°C was continued up to 10–30 nm at 300°C. This process yielded uniform, monoclinic HfO₂ films with RMS roughness of 1.7 nm for 10–12 nm thick films and 2.5 nm for 30 nm thick films. Raman spectroscopy studies revealed that the deposition process caused compressive biaxial strain in graphene, whereas no extra defects were generated. An 11 nm thick HfO₂ film deposited onto bilayer graphene reduced the electron mobility by less than 10% at the Dirac point and by 30–40% far away from it.     

An influence of deposition temperature on structural,optical and electrical properties of sprayed ZnO thin films of identical thickness

Nanocrystalline ZnO thin films were deposited at different temperatures (T_s = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of T_s on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in T_s. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher T_s demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (～10^?2 Ω-cm), superior figure of merit (～10^?3 Ω^?1) and low sheet resistance (～10² Ω/□). The charge carrier concentration (η -/cm³) and mobility (μ – cm²V^?1s^?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.     

Composition-dependent metal-insulator transition in perovskite CaXPb(1−X) TiO3 (CPT) ceramic

Ceramic compositions of a complex perovskite Ca_XPb(_1?X)TiO₃ (CPT) systems with x=0.6, 0.7 and 0.8 were prepared by mechanical mixing of their oxides (CaTiO₃ and PbTiO₃). The structure of the (CPT) ceramics was characterized by X-ray diffraction (XRD) The ceramics transform gradually from orthorhombic phase (pseudo cubic phase) to cubic phase by increasing pb content percent. The dc resistivity ρ(t) versus temperature (range 300–525 K) for x=0.6, 0.7 and 0.8. The ρ.T/curves reveal that samples exhibit a metallic behaviour at low temperature and undergo a metal-semiconductor transition with increasing temperature at T_p=373 K, 343 K and 333 K, for x=0.6, 0.7 and 0.8, respectively. The nature of conduction mechanism is studied in semiconductor region by studying the current–voltage temperature characteristics. The current–voltage characteristics were interpreted in terms of Poole–Frenkel type of conduction mechanism.     

The luminescence of ZnO ceramics

The luminescence properties of ZnO ceramics with grains 100–5000 nm sintered by different techniques from nanopowders were studied. The luminescence decay times were compared with that obtained for ZnO single crystal. The temperature dependence of non-exponential decay of defect luminescence (2.0–2.6 eV) was measured in wide time, intensity and temperature range. The luminescence decay kinetic at T ≤ 20 K shows the decay close to I(t) ～ t^?1 dependence. At temperature region 50–250 K the decay kinetics is more complicate since the TSL was observed in this temperature region. It is shown that the luminescence properties of NP and ceramics strongly depend on defect distribution on grains surface and the volume/surface ratio determine the luminescence decay in ZnO nanostructures and ceramics.     

Magnetotransport properties of ferromagnetic LaMnO3+δ nano-sized crystals

Transport and magnetic properties of LaMnO_3+δ nanoparticles with average size of 18 nm have been investigated. The ensemble of nanoparticles exhibits a paramagnetic to ferromagnetic (FM) transition at T_C～246 K, while the spontaneous magnetization disappears at T≈270 K. It was found that the blocking temperature lies slightly below T_C. The temperature dependence of the resistivity shows a metal–insulator transition at T≈192 K and low-temperature upturn at T<50 K. The transport at low temperatures is controlled by the charging energy and spin-dependent tunnelling through grain boundaries. The low temperature I–V characteristics are well described by indirect tunnelling model while at higher temperatures both direct and resonant tunnelling dominates.     

Luminescence study of self-trapped excitons in CdMoO4

Luminescence properties of CdMoO₄ crystals have been investigated in a wide temperature range of T=5–300 K. The luminescence-excitation spectra are examined by using synchrotron radiation as a light source. A broad structureless emission band appears with a maximum at nearly 550 nm when excited with photons in the fundamental absorption region (<350 nm) at T=5 K. This luminescence is ascribed to a radiative transition from the triplet state of a self-trapped exciton (STE) located on a (MoO₄)^2? complex anion. Time-resolved luminescence spectra are also measured under the excitation with 266 nm light from a Nd:YAG laser. It is confirmed that triplet luminescence consists of three emission bands with different decay times. Such composite nature is explained in terms of a Jahn–Teller splitting of the triplet STE state. The triplet luminescence at 550 nm is found to be greatly polarized in the direction along the crystallographic c axis at low temperatures, but change the degree of polarization from positive to negative at T>180 K. This remarkable polarization is accounted for by introducing further symmetry lowering of tetrahedral (MoO₄)^2? ions due to a uniaxial crystal field, in addition to the Jahn–Teller distortion. Furthermore, weak luminescence from a singlet state locating above the triplet state is time-resolved just after the pulse excitation, with a polarization parallel to the c axis. The excited sublevels of STEs responsible for CdMoO₄ luminescence are assigned on the basis of these experimental results and a group-theoretical consideration.     

Structural and optical characterization of sol–gel derived Tm-doped BaTiO3 nanopowders and ceramics

Nanocrystalline Tm³⁺(5%)-doped BaTiO₃ (BT-Tm) has been synthesized by the sol–gel method. The morphology, structure, and optical properties of powders and ceramics were characterized. The average grain size of the gel precursor annealed at 700 and 900 °C was 20 nm and 30 nm, respectively. These powders were single phase and crystallized with a cubic structure while the BT-Tm sintered ceramics were crystallized with the tetragonal BaTiO₃ structure. The photoluminescence spectra showed typical transitions of Tm³⁺ ions and a structure consistent with the Tm³⁺ ions incorporation in the BaTiO₃ crystalline lattice. Thermoluminescence peaks recorded at 300 °C (for annealed samples) or at 230 °C for the ceramic sample were assigned to the recombination of the Tm²⁺-electron traps located mainly at the surface of the nano-crystals or inside the microcrystals, respectively.     

Novel NdCo<Subscript>5</Subscript> nanoflakes and nanoparticles produced by surfactant-assisted high-energy ball milling

High-energy ball milling has been shown to be a promising method for the fabrication of rare earth—transition metal nanopowders. In this work, NdCo₅ nanoflakes and nanoparticles have been produced by a two-stage high-energy ball milling (HEBM), by first using wet HEBM to prepare precursor nanocrystalline powders followed by surfactant-assisted HEBM. NdCo₅ flakes have a thickness below 150 nm and an aspect ratio as high as 10²–10³; the nanoparticles have an average size of 7 nm. Both the nanoparticles and nano-flakes exhibited high coercivities at low temperatures, with values at 50 K of 3 and 3.7 kOe, respectively. The high values of coercivity can be attributed to the large surface anisotropy of nanoparticles that leads to an effective uniaxial-type of behavior in contrast to the planar anisotropy of the bulk samples. Angle-dependent magnetization measurements at different temperatures were used to determine the spin reorientation transitions in the nanopowders and nanoparticles. The nanoparticles showed spin reorientation temperatures, T _SR1 = 276 and T _SR2 = 237 K which are lower when compared with the values of 290 and 245 K, respectively for bulk.     

Radio-photoluminescence of highly irradiated Lif:Mg,Ti and Lif:Mg,Cu,P detectors

The radio-photoluminescent (RPL) characteristics of LiF:Mg,Ti (MTS) and LiF:Mg,Cu,P (MCP) thermoluminescent detectors, routinely used in radiation protection dosimetry, were investigated after irradiation with ultra-high electron doses ranging up to 1 MGy. The photoluminescence of both types of LiF detectors was stimulated by a blue light (460 nm) and measured within a spectral window around 530 nm. The RPL dose response was found to be linear up to 50 kGy and sublinear in the range of 50 kGy to 1 MGy for MCP detectors and linear up to 3 kGy and next sublinear in the range from 5 kGy to 1 MGy for MTS detectors. For both type of LiF detectors RPL signal is saturated for doses higher than 100 kGy. The observed differences between MCP and MTS may suggest, that the RPL effect in LiF is not entirely governed by intrinsic defects (F₂ and F₃⁺ centers), but dopants may also have a significant influence. Due to the non-destructive character of the RPL measurement, it is suggested to apply combined RPL/TL readouts, what should improve accuracy of high-dose dosimetry.     

Effect of structural disorder on magnetic frustrations in the Fe80Nb6B14 amorphous alloy

The paper presents measurements of magnetic frustrations for the Fe₈₀Nb₆B₁₄ amorphous alloy preliminary annealed for 1 h at temperatures ranging from 300 to 770 K in comparison with other parameters characterizing structural relaxation. It was shown that annealing out of free volume and internal stresses cause a reduction in number of frustrated states observed in the range 400>T>50 K. In the range 2<T<50 K additional frustrations due to iron clusters or nanograins were detected.     

Thermal conductivity of the amorphous and nanocrystalline phases of the beech wood biocarbon nanocomposite

Natural composites (biocarbons) obtained by carbonization of beech wood at different carbonization temperatures T _carb in the range of 800–2400°C have been studied using X-ray diffraction. The composites consist of an amorphous matrix and nanocrystallites of graphite and graphene. The volume fractions of the amorphous and nanocrystalline phases as functions of T _carb have been determined. Temperature dependences of the phonon thermal conductivity κ(T) of the biocarbons with different temperatures T _carb (1000 and 2400°C) have been analyzed in the range of 5–300 K. It has been shown that the behavior of κ(T) of the biocarbon with T _carb = 1000°C is controlled by the amorphous phase in the range of 5–50 K and by the nanocrystalline phase in the range of 100–300 K. The character of κ(T) of the biocarbon with T _carb = 2400°C is determined by the heat transfer (scattering) in the nanocrystalline phase over the entire temperature range of 5–300 K.     

Sr2FeMoO6 nanosized compound with dielectric sheaths for magnetically sensitive spintronic devices

Single-phase agglomerated Sr₂FeMoO₆-_δ powders with the iron and molybdenum cations superstructural ordering of 88% were synthesized by sol-gel technique from the Sr(NO₃)₂ and Fe(NO₃)₃·9H₂O solutions with pH = 4. The ultrasound dispersion enabled us to obtain 75 nm grains. Powders were pressed with 4 GPa to receive the ceramics. The additional annealing at 700 K promoted the appearance of 7.5% SrMoO₄ phase. The nanocomposite with dielectric sheaths around the grains was obtained. Magnetization temperature dependences in zero-field cooled mode revealed inhomogeneous magnetic states. At temperature below 19 K, the superparamagnetic state is observed. Temperature increase leads to a realization of the stable superparamagnetic and metastable ferrimagnetic states, blocked by magnetic anisotropy energy. The resistivity temperature dependences have the semiconducting conductivity type. The charge transfer due to the hopping conductivity on the localized states in the energy band near the Fermi level dominates at 260–300 K. At 130–200 K the charge transfer is realized by electrons tunneling through the energy barrier. The electrons inelastic tunneling on conducting channels between grains, through the localized states in the dielectic interlayer dominates at low temperatures. The resistivity decreases in magnetic fields and the negative tunneling magnetoresistive effect reaching 41% occurs.     

Electrical transport and persistent photoconductivity in quantum dot layers in InAs/GaAs structures

The conductivity of quantum dot layers is studied in InAs/GaAs structures in the temperature range from 300 to 0.05 K in the dark and using two types of illumination in magnetic fields up to 6 T. Depending on the initial concentration of current carriers, the conductivity of the structures varied from metallic (the Shubnikov-de Haas effect was observed) to hopping conductivity. At low temperatures, the temperature dependence of the resistance changed from the Mott dependence to the dependence described by the Shklovskii-Efros law for hopping conductivity in the presence of the Coulomb gap in the density of states. The conductivity of samples was studied upon their illumination at λ = 791 nm and λ > 1120 nm. All the samples exhibited a positive persistent photoconductivity at T < 250 K. The structures were also studied using photoluminescence and an atomic force microscope.     

Photoluminescence of nanostructured Zn<Subscript>2</Subscript>SiO<Subscript>4</Subscript>:Mn<Superscript>2+</Superscript> ceramics under UV and VUV excitation

The photoluminescence of Zn₂SiO₄:Mn²⁺ ceramics with a particle size of 120 ± 10 nm, which is excited in the range of 3.5–5.8 eV and subjected to synchrotron radiation with photon energies of up to 20 eV, is investigated. Nanoscale Zn₂SiO₄:Mn²⁺ ceramics possesses intense luminescence with a maximum of 2.34 eV, the position and half-width of the band are independent of the excitation energy. It is found that the photoluminescence at 2.34 eV decays nonexponentially upon ultraviolet excitation. In the case of nanoscale ceramics is irradiated by vacuum ultraviolet, an additional photoluminescence-excitation channel is likely to occur due to interaction of band states and intrinsic vacancy-like defects of the Zn₂SiO₄ matrix.