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通过用Monte Carlo方法模拟N2-H2 混合气体直流辉光放电等离子体快电子行为,从不同H2浓度的电子能量分布函数,电子密度以及ef-N2碰撞率等方面,研究了加H2对氮辉光放电等离子体过程的影响. 研究结果表明: 随着H2浓度的升高,电子的平均能量增加, 电子密度及ef-N2的各种非弹性碰撞率减小; 但在
关键词:
2-H2辉光放电')" href="#">N2-H2辉光放电
Monte Carlo模拟
2碰撞率')" href="#">e-N2碰撞率 相似文献
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基于多体展式方法所导出的SiH2(X1A1)分析势能函数,用准经典的Monte Carlo轨线法研究了Si(1Dg)+H2(0,0)和H(2Sg)+SiH(0,0)的原子与分子反应动力学过程.研究结果表明:Si(1Dg)与H2(0,0)的碰撞在低能时(小于209.20 kJ/mol)生成稳定的络合物SiH2(X1A1),该反应是无阈能反应;而H(2Sg)与SiH (0,0)碰撞不能生成稳定的络合物,主要发生交换反应H(2Sg)+SiH (0,0)→Si(1Dg)+H2(0,0),该反应也是无阈能反应.
关键词:
2')" href="#">SiH2
势能函数
反应截面
轨线 相似文献
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采用射频磁控溅射方法制备了两种用于相变存储器的Ge1Sb2Te4和Ge2Sb2Te5相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge1Sb2Te4薄膜逐步晶化,由非晶态转变为多晶态,表面出现均匀的、
关键词:
硫系相变材料
1Sb2Te4')" href="#">Ge1Sb2Te4
2Sb2Te5')" href="#">Ge2Sb2Te5 相似文献
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报道了H+5的实验结果.分析讨论了H+5的 形成和分解途径.根据理论分析,以稳定的H+3为核心与一个或多个氢分子结合可能形成稳定的H+ sup>n氢团簇离子.另一方面,在高频离子源中, 有发生H+3与H2反应的条件.实 验中,从高频离子源引出的离子束被静电加速器加速,然后用9
关键词:
+5团簇离子')" href="#">H+5团簇离子
3中性团簇')" href="#">H3中性团簇
4中性团簇')" href="#">H4中性团簇 相似文献
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采用改进的溶胶-凝胶方法在单晶Si(100)衬底上制备了介电性能优异的(Ba0.7Sr0.3)TiO3/LaNiO3异质薄膜.实验发现,在750 ℃下 、O2气氛中晶化的LaNiO3薄膜的电阻率最小.C-V与I-V特性测量表明(Ba0.7Sr0.3)TiO3薄膜具有优异的介电性能,在频率为50kHz、零偏压下的相对介电常数εr>300,偏压为6V时漏电流密度JL<1.2×10-6A/cm2.
关键词:
xSr1-x)TiO3铁电薄膜')" href="#">(BaxSr1-x)TiO3铁电薄膜
3底电极')" href="#">LaNiO3底电极
溶胶-凝胶法 相似文献
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以十甲基环五硅氧烷(D5)和氧气(O2)作为反应气体,采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法制备了k=2.62的SiCOH薄膜.研究了O2掺杂对薄膜结构与电学性能的影响.结果表明,采用O2掺杂可以在保持较低介电常数的前提下极大地降低薄膜的漏电流,提高薄膜的绝缘性能,这与薄膜中Si-O立体鼠笼、Si-OH结构含量的提高有关.
关键词:
SiCOH薄膜
2掺杂')" href="#">O2掺杂
介电性能
键结构 相似文献
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以SiCl4和H2为气源,用等离子体增强化学气相沉积技术,在250℃的低温下,研究氢稀释度对多晶硅薄膜结构特性的影响.实验结果表明,对于以SiCl4和H2组成的反应源气体,氢对薄膜生长特性的影响有异于SiH4/H2,在一定功率下,薄膜的晶化率随氢稀释度的减小而增加,在一定的氢稀释度下薄膜晶化度达到最大值85%;随着氢稀释度的继续减小,薄膜晶化度迅速下降,并逐渐向非晶态结构转变.随氢稀释度的减小,薄膜的光学带隙由 1.5eV减小至约1.2eV,而后增大至1.8eV.沉积速率则随氢稀释度的减小先增加后减小,在无氢条件下,无薄膜形成.在最佳氢稀释度条件下,Cl基是促进晶化度提高,晶粒长大的一个主要因素.
关键词:
多晶硅薄膜
微结构
氢稀释
4')" href="#">SiCl4 相似文献
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In this study, SnO2/TiO2 thin films are fabricated on SiO2/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO2/Si substrates. Therefore, the results suggest that SiO2/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO2/TiO2 films. 相似文献
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Two-layer ZrO2/SiO2 and SiO2/ZrO2 films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO2/SiO2 and SiO2/ZrO2 films. To explain the difference of diffusion between ZrO2/SiO2 and SiO2/ZrO2 films, porous ratio and surface morphology of monolayer SiO2 and ZrO2 films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO2/SiO2 films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO2/ZrO2 films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO2 layer had diffused through the entire SiO2 layer. The difference of diffusion between ZrO2/SiO2 and SiO2/ZrO2 films was influenced by the microstructure of SiO2 and ZrO2. 相似文献
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采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO3纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO3纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO3纳米复合薄 相似文献
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采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO3纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO3纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO3纳米复合薄
关键词:
3')" href="#">BaTiO3
纳米复合薄膜
紫外光电子能谱 相似文献
15.
Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films
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Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed. 相似文献
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采用脉冲激光沉积(PLD)技术,利用LSCO/CeO2/YSZ多异质缓冲层,在Si(100)基 片上成功地制备了c轴一致取向的Bi3.15Nd0.85Ti3O12(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构 、取向和形貌特征,考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响,确定 了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型 的蝴蝶形曲线,表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与 薄膜取向的相关性.
关键词:
3.15Nd0.85Ti3O12')" href="#">Bi3.15Nd0.85Ti3O12
铁电薄 膜
多层异质结
脉冲激光沉积 相似文献
17.
Junyu ZhuYing Chen Wenfei XuJing Yang Wei BaiGenshui Wang Chungang DuanZheng Tang Xiaodong Tang 《Physics letters. A》2011,375(34):3103-3106
Polycrystalline La0.7Sr0.3MnO3 (LSMO) films were prepared on SiO2/Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature (<50 K) under magnetic fields from 0 T to 3 T. Kondo-like spin dependent scattering, which includes both spin polarization and grain boundary tunneling, was observed in the low-temperature electrical transport for the LSMO polycrystalline films. The temperature-dependent resistivity at low temperatures can be well fitted in the framework of elastic scattering, electron-electron (e-e) interaction, Kondo-like spin dependent scattering, and electron-phonon (e-ph) interaction. 相似文献
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采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO2/Si(100)衬底上的铁电性能优良的Sr2Bi4Ti5O18 (SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明:薄膜具有单一的层状钙钛矿结构,且为随机取向;薄膜表面光滑,无裂纹,厚度约为725nm;铁电性能测试显示较饱和、方形的电滞回线,当外电场强度为275kV/cm时
关键词:
溶胶-凝胶法
铁电薄膜
2Bi4Ti5O18')" href="#">Sr2Bi4Ti5O18 相似文献
19.
L.G. Gao K.B. Yin L. Chen H.X. Guo Y.D. Xia J. Yin Z.G. Liu 《Applied Surface Science》2009,256(1):90-95
Thermal stability, interfacial structures and electrical properties of amorphous (La2O3)0.5(SiO2)0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH3 nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH3 can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation. 相似文献