DFT study of size-dependent geometries,stabilities and electronic properties of Si2Agn clusters: comparison with pure silver clusters

The equilibrium geometric structures, stabilities and electronic properties of Si₂Ag_n (n = 1–8) and pure silver Ag_n (n ≤ 10) clusters have been systematically investigated by using meta-generalised gradient approximation. Due to sp³ hybridisation, the lowest energy structures of Si₂Ag_n clusters for n > 2 favour the three-dimensional structure. The silicon atoms prefer to be located at the surface of the host silver clusters. By analysing the relative stabilities, it is found that the di-bridged structure Si₂Ag₂ isomer is the most stable structure for Si₂Ag_n (n = 1–8) clusters. The highest occupied–lowest unoccupied molecular orbital gaps, exhibiting a pronounced even–odd alternation, indicate that the doped clusters with even number of atoms have enhanced chemical stability than those with odd number of atoms. The results of Wiberg bond indices and electronic localisation function show that the stronger Si–Si and Si–Ag interaction may be the main driving force for the higher stability of Si₂Ag_n clusters.     

Structures and electronic properties of AUn-1Cu and AUn （n ≤ 9） clusters

A systematic study on the structure and electronic properties of gold clusters doped each with one copper atom has been performed using the density functional theory. The average bond lengths in the Aun-1Cu （n ≤ 9） bimetallic clusters are shorter than those in the corresponding pure gold clusters. The ionization potentials of the bimetallic clusters Aun-1Cu （n 〈 9） are larger than those of the corresponding homoatomic gold clusters except for Aus. The energy gaps of the Au-Cu binary clusters are narrower than those of the Aun clusters except AuCu and Au3Cu. No obvious even-odd effect exists in the variations of the electron affinities and ionization potentials for the Aun-1Cu （n ≤ 9） clusters, which is in contrast to the case of gold clusters Aun.     

密度泛函理论研究Hg与Auqn(n=1—6, q=0,+1,-1) 团簇的相互作用

采用密度泛函理论中的广义梯度近似对Hg与小团簇Au ^q_n (n=1—6, q=0, +1, -1)的相互作用进行了系统研究. 结果表明,除Au₅^+,-团簇外,前线分子轨道理论可以成功预测大部分Au _n Hg ^q 复合物的最低能量结构. Au_n团簇对Hg的吸附受团簇尺寸大小和团簇所携带电荷的影 关键词： 密度泛函理论 汞 金团簇 吸附能     

C60富勒烯-巴比妥酸及其二聚体几何结构和电子结构的密度泛函计算研究

采用基于密度泛函理论的广义梯度近似,对C₆₀富勒烯-巴比妥酸及其二聚体的几何结构和电子结构进行了计算研究.发现：C₆₀富勒烯-巴比妥酸只有一种稳定结构,且掺杂巴比妥酸基团对C₆₀分子构型的影响是局域的.C₆₀富勒烯-巴比妥酸的二聚体有三种同素异构体,分别以［6,5］—［6,5］,［6,6］—［6,5］和［6,6］—［6,6］三种方式键合,从能隙大小顺序和总能相对大小来看,［6,6］—［6,6］结构最为稳定.电子结构方面,在C₆₀富勒烯-巴比妥酸单体中,Donor-Acceptor电荷转移体系为C₆₀富勒烯-巴比妥酸,即电荷是从C₆₀向巴比妥酸转移.由前线轨道和自旋布居数得知,C₆₀富勒烯-巴比妥酸单体很好地保留了C₆₀的电磁性质,但稳定性下降,易发生二次加成反应形成二聚体.对于C₆₀富勒烯-巴比妥酸二聚体,Mulliken电荷分析显示,在加成四元环处的碳原子分别得到0104e和0106e电荷,而与它们邻近的碳原子则失去电子,带有正电荷,且距加成位置越近的碳原子失去的电荷越多.在远离加成位置处,碳原子的净电荷变化相对较小.与单体152eV能隙相比,二聚体中的能隙为1.45eV.其前线轨道分布与单体相比,最高占据轨道几乎未变,但最低未占据轨道发生了很大变化. 关键词： 几何结构 电子结构 密度泛函     

AunY(n＝1—9)掺杂团簇的结构和电子性质研究

采用相对论有效原子实势(RECP)近似和密度泛函(B3LYP)方法，选择LANL2DZ基组，优化得到了Au_nY(n＝1—9)二元掺杂团簇稳定的基态结构和电子性质.研究结果表明，掺杂Y原子的Au_nY(n＝1—9)团簇随n的变化，其电离势、电子亲合能和费米能级与Au_n(n＝2—9)一样具有“奇-偶”振荡效应；团簇离子的稳定性具有“幻数”现象，Au₂Y⁺和Au₆Y⁺比其他团簇离子更稳定，与质谱实验结果一致；同一团簇中，团簇最稳定的异构体(基态)是趋于Y原子有最大的邻近的Au原子数. 关键词： Au-Y团簇 密度泛函 平衡几何结构 电子性质     

Si_4N_4团簇结构与性质的密度泛函理论研究(英文)

用密度泛函理论(DFT)中的杂化密度泛函B3LYP方法,在6-31G(d)的水平上对Si4N4团簇的可能结构进行了几何结构优化和电子结构计算,得到了可能的17个异构体.Si4N4团簇的最稳定结构是有8个Si-N键的平面结构.用自然键轨道(NBO)方法分析了成键性质.计算结果表明,Si-N键中Si原子向N原子有较大的电荷转移,因此Si-N原子间有较强的电相互作用;最强的IR和Raman谱峰分别位于1387.64cm-1和1415.05cm-1处;并计算了Si4N4团簇的最稳定结构的极化率和超极化率.     

Si3N4团簇结构与性质的密度泛函理论研究

用杂化密度泛函B3LYP在6-31G*的水平上研究了Si3N4团簇可能结构的平衡几何构型和电子结构,得到了24个可能的异构体.Si3N4团簇的最稳定结构是由7个Si—N键和2个N—N键形成的3个四边形构成的三维结构.用自然键轨道方法(NBO)分析了成键性质,结果表明,Si—N键中的Si、N原子的净电荷较大,说明Si—N键中Si、N原子的相互作用主要是电相互作用.最强的IR和Raman峰分别位于1033.40 cm-1,473.63 cm-1处.并且讨论了最稳定结构的极化率和超极化率.     

Density functional theory study on the structure and properties of Si3N4 clusters

The hybrid density functional theory B3LYP with basis sets 6-31G＊ has been used to study on the equilibrium geometries and electronic structures of possible isomers of Si3N4 clusters. 24 possible isomers are obtained. The most stable isomer of Si3N4 is a 3D structure with 7 Si-N bonds and 2 N-N bonds that could beformed by 3 quadrangles. The bond properties of the most stable isomer was analyzed by using natural bond orbital method （NBO）, the results suggest that the charges on Si and N atoms in Si-N bonds are quite large, so theinteraction of N-Si atoms in Si3N4 cluster is of strongly electric interaction. The primary IR and Raman vibrational frequency located at 1033.40 cm^-1, 473.63 cm^-1 respectively. The polarizabilities and hyperpolarizabilities of the most stable isomer are also analyzed.     

Density functional theory study on the structure and properties of Si3N4clusters

The hybrid density functional theory B3LYP with basis sets 6-31G· has been used to study on the equilibrium geometries and electronic structures of possible isomers of Si3N4 clusters. 24 possible isomers are obtained. The most stable isomer of Si3N4 is a 3D structure with 7 Si-N bonds and 2 N-N bonds that could be formed by 3 quadrangles. The bond properties of the most stable isomer was analyzed by using natural bond orbital method (NBO), the results suggest that the charges on Si and N atoms in Si-N bonds are quite large, so the interaction of N-Si atoms in Si3N4 cluster is of strongly electric interaction. The primary IR and Raman vibrational frequency located at 1033.40 cm-1, 473.63 cm-1 respectively. The polarizabilities and hyperpolarizabilities of the most stable isomer are also analyzed.     

双金属掺杂M2@Si20(M=Ti, Zr, Hf)团簇结构和性质的理论研究

采用密度泛函理论(DFT)和相对论有效原子核势近似(RECP),对M2@Si20(M=Ti,Zr,Hf)团簇的几何结构和电子结构性质进行研究,发现内嵌的金属二聚体和十二面体硅笼构成了稳定的富勒烯结构。通过对团簇电子结构的分析,结果表明Si20团簇掺杂双金属后稳定性得到了提高。对团簇的电荷布局分析表明过渡金属原子(Ti, Zr, Hf)和硅笼之间发生了电荷反转。     

Ca掺杂Si团簇的几何结构和电子性质的密度泛函理论研究

采用密度泛函理论(DFT)B3LYP方法在6-311+G(d,p)基组水平,对CaSi_n(n=1~10)的结构进行优化,得出各个尺寸下团簇处于最低能量的结构模型,并对其稳定性等物理化学性质进行理论研究,表明CaSi_2、CaSi_5和CaSi_9为幻数团簇.     

铟团簇结构和电子性质的密度泛函研究

用密度泛函方法研究了Inn(n=2-7)团簇的稳定结构和电子性质。结果表明：自旋多重度对结构的影响不大;对于基态结构,n≤5时为平面结构,n≥6时为立体结构,n=6为结构转变点;平均结合能曲线随团簇尺寸增大逐渐平缓;能隙、结合能的二阶差分和电离势随团簇尺寸的变化趋势完全一致,均反映出In4团簇的基态结构较为稳定,具有较强的非金属性。     

铟团簇结构和电子性质的密度泛函研究

用密度泛函方法研究了In_n(n=2～7)团簇的稳定结构和电子性质.结果表明:自旋多重度对结构的影响不大;对于基态结构,n≤5时为平面结构,n≥6时为立体结构,n=6为结构转变点;平均结合能曲线随团簇尺寸增大逐渐平缓;能隙、结合能的二阶差分和电离势随团簇尺寸的变化趋势完全一致,均反映出In_4团簇的基态结构较为稳定,具有较强的非金属性.     

钇小团簇的结构和电离势的计算

采用密度泛函DFT中的B3LYP方法，选择LANL2DZ双ζ基组，优化并得到了Y_n=(n=2—8)小团簇的基态平衡结构，同时计算出其电离势.结果表明，钇原子之间形成团簇最稳定的结构是倾向于平均配位数最大，其电离势没有“奇-偶”振荡或“幻数”效应，表明Y_n团簇光致电离开始主要发生在Y原子局域化的4d轨道上的电子而不是在5s上.对Tomasz提出的钇团簇电离势的解析式进行合理地修正，修正后电离势解析式的计算值与实验值更接近. 关键词： Y团簇 密度泛函 平衡几何结构 电离势     

密度泛函理论研究KBn(n=1-9)团簇的结构和性质

在密度泛函理论的框架下, 采用广义梯度近似(GGA)研究了KBn(n=1-9)团簇的基态几何结构, 系统计算了平均结合能Eb、二阶能量差分△2E、劈裂能D(n,n-1)、最高占据轨道(HOMO)与最低未占据轨道(LUMO)之间的能隙, 研究表明: KBn(n=1-9)团簇, 随着团簇尺寸的变化, 其稳定性逐渐增强, 其中 KB3和KB5为幻数团簇; KBn(n=1-9)团簇的能隙随团簇总原子数的增加呈现振荡变化, 态密度分析得到能隙振荡变化的原因是团簇带隙的差异.     

密度泛函理论研究KB_n(n=1-9)团簇的结构和性质

在密度泛函理论的框架下,采用广义梯度近似(GGA)研究了KB_n(n=1-9)团簇的基态几何结构,系统计算了平均结合能Eb、二阶能量差分△2E、劈裂能D(n,n-1)、最高占据轨道(HOMO)与最低未占据轨道(LUMO)之间的能隙,研究表明:KB_n(n=1-9)团簇,随着团簇尺寸的变化,其稳定性逐渐增强,其中KB_3和KB_5为幻数团簇;KB_n(n=1-9)团簇的能隙随团簇总原子数的增加呈现振荡变化,态密度分析得到能隙振荡变化的原因是团簇带隙的差异.     

Structures and electronic properties of SimN8-m（0 〈 m 〈 8） clusters： a density functional theory study

The geometries, electronic structures and related properties of SimN8-m（0 〈 m 〈 8） clusters are studied using density functional theory （DFT） with hybrid functional B3LYP. The calculated results reveal several trends. For any stoichiometric clusters, the lowest energy isomers with an alteration of N and Si atoms are favourable in energy if the numbers of Si and N atoms are large enough to form ... Si N-Si-N... alternative chains. The bond lengths of single Si-N bonds are very close to the corresponding values of the bulk and other SiN clusters. The geometries for N-rich and Si4N4 clusters are planar structures, but three-dimensional structures are favourable in energy for Si-rich clusters. With the increase of m, the isotropic polarizability and average polarizability increase, the total binding energies generally decrease, the HOMO-LUMO gap and vertical ionization potential oscillate with increasing number of valence electrons, and their values with even valence electrons are larger than those with odd valence electrons. The atomic charges, IR and Raman properties are also reported.     

氧化镁纳米管团簇电子结构的密度泛函研究

用密度泛函理论（DFT）的杂化密度泛函B3LYP方法在6-31G（d）基组水平上对MgO纳米管团簇的二元环双管、三元环、三元环双管三种构型共21个团簇进行优化,对各构型的平均结合能、能隙、平均原子电荷以及总电荷密度进行了理论研究. 结果表明,平均结合能和配位数呈线性关系;随着纳米管的生长,团簇的稳定性增加,其中以三元环纳米管最为稳定;生长过程中发生原子间的电荷转移现象,预测出至无限长时的平均原子电荷分别为1298,1270,1306;混合离子共价键始终存在于MgO纳米管团簇之中. 关键词： 氧化镁 纳米管团簇 密度泛函理论 电子结构     

Density functional investigation of structural, electronic and optical properties of Ge-doped ZnO

Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Ge-doped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge atoms tend to cluster in heavily doped ZnO. Ge clusters can limit the conductivity of doped ZnO but reinforce the near-band-edge emission. The substitutional Ge for Zn leads to Fermi level pinning in the conduction band, which indicates Ge-doped ZnO is of n-type conductivity character. It is found that the delocalized Ge 4s states hybridize with conduction band bottom, and is dominant in the region near the Fermi level, suggesting that Ge-4s states provides major free carriers in ZnO:Ge crystal. The observed blueshift of PL in Ge-doped ZnO originates from the electron transition energy from the valence band to the empty levels above Fermi level larger than the gap of undoped ZnO. The electron transition between the gap states induced by oxygen vacancy and conduction band minimum may be the origin of the new PL peak at 590 nm.     

H20@C80F60结构稳定性和电子性质的密度泛函研究

采用密度泛函理论(density functional theory,DFT)方法中的广义梯度近似(generalized gradient approximation,GGA),对H20@C80F60结构稳定性和电子性质进行了计算研究.结果表明： H20@C80F60的反应热为236.73eV,大于H20@C80H60的反应热,同时它具有一个3.57eV的较大能隙,说明H20@C80F60具有良好的稳定性．电子结构分析表明：H20@C80F60的最低未占据轨道主要由H原子贡献,而最高占据轨道主要由C原子和F原子贡献,H20@C80F60得电子能力较H20@C80H60有了显著增强．此外,H20@C80F60与H20@C80H60类似,都为闭壳层结构,所有电子均配对,表现为非磁性．