Contact effects on the magnetoresistance of finite semiconductors

We propose a new theoretical method to study galvanomagnetic effects in bounded semiconductors. The general idea of this method is as follows. We consider the electron temperature distribution and the electric potential as consisting of two terms, one of which represents the regular solution of the energy balance equation obtained from the Boltzmann transport equation at steady-state conditions and the Maxwell equation, while the other is the effect of the specimen size that is significant near the contacts (the boundary layer function). With the distribution of the electric potential at the contacts and the electron temperature distribution at the surface of the sample taken into account, we find that the magnetoresistance is different from the one in the standard theory of galvanomagnetic effects in boundless media. We show that, besides the usual quadratic dependence on the applied magnetic field B, the magnetoresistance can exhibit a linear dependence on B under certain conditions. We obtain new formulas for the linear and quadratic terms of the magnetoresistance in bounded semiconductors. This linear contribution of the magnetic field to the magnetoresistance is essentially due to the spatial dependence of the potential at the electric contacts. We also discuss the possibility of obtaining the distribution of the electric potential at the contacts from standard magnetoresistance experiments. Because the applied magnetic field acts differently on carriers with different mobilities, a redistribution of the electron energy occurs in the sample and thus, the Ettingshausen effect on the magnetoresistance must be considered in bounded semiconductors.     

Relation between giant volume magnetostriction and colossal magnetoresistance near the Curie temperature of Sm0.55Sr0.45MnO3

The magnetic, transport, and elastic properties of Sm_0.55Sr_0.45MnO₃ have been established to be interrelated. At the Curie point, one observes a large volume compression ΔV/V≈0.1%, a sharp minimum in the temperature dependence of negative volume magnetostriction ω(T), and a maximum in the temperature dependence of the electrical resistivity. Giant negative volume magnetostriction ω=?5×10^?4 has been found in a magnetic field H=0.9 T, which is accompanied by a colossal negative magnetoresistance of 44% in the same field. The results obtained are discussed in terms of a model of electronic phase separation.     

Anomalous behavior of the surface tension at the interface of the metallic and insulating phases in the vicinity of the metal-insulator phase transition in a magnetic field

Mean-field equations describing the metal-insulator (MI) transition are formulated. They involve two coupled order parameters characterizing this transition: (i) a scalar order parameter describing the density change accompanying the transition from the insulating state to the metallic one and (ii) an order parameter (a two-component vector) describing the electron density in the metallic or semimetallic phase affected by the applied magnetic field. Two components of this vector correspond to different possible spin states of electrons in the applied magnetic field. The transition in the density of metallic and insulating phases being a first order phase transition is treated in terms of the Cahn-Hilliard-type gradient expansion. The transition in the electron density is a second order phase described by the Ginzburg-Landau-type functional. The coupling of these two parameters is described by the term linearly dependent on the electron density n in the metal with the proportionality factor being a function of the density of the metallic phase. The derived equations are solved in the case of the MI interface in the presence of both parallel and perpendicular uniform magnetic fields. The calculated surface tension Σ_mi between the metallic and insulating phases has a singular behavior. In the limit of zero electron density n ? 0, Σ_mi ～ n ^3/2. Near the MI transition point T _c(h) in the applied magnetic field, Σ_mi ～ [T - T _c(h)]^3/2. The singular behavior of the surface tension at the MI interface results in the clearly pronounced hysteresis accompanying the transition from the insulating to metallic state and vice versa.     

Phase separation in systems with charge ordering

A simple model of charge ordering is considered. It is explicitly shown that at any deviation from half-filling (n≠1/2), the system is unstable with respect to the phase separation into the charge ordered regions with n=1/2 and the metallic regions with a smaller electron or hole density. A possible structure of this phase-separated state (metallic droplets in a charge ordered matrix) is discussed. The model is extended to account for the strong Hund-rule onsite coupling and the weaker intersite antiferromagnetic exchange. The analysis of this extended model allows us to determine the magnetic structure of the phase-separated state and to reveal the characteristic features of the manganites and other substances with charge ordering.     

Intrinsic inhomogeneities of low-doped lanthanum manganites in the paramagnetic temperature range

The nature of the electrical resistivity for low-doped lanthanum manganites is elucidated. The electrical resistivity is described by the Efros-Shklovskii law (lnρ √ (T ₀/T)^−1/2, where T ₀ √ 1/R _ls) in the temperature range from T* ≈ 300 K ≈ T _C (T _C is the Curie temperature for conducting manganites) to their T _C and is explained by the tunneling of carriers between localized states. The magnetoresistance is explained by a change in the size of localized states R _ls in a magnetic field. The patterns of change in R _ls with temperature and magnetic field strength determined from magnetotransport properties are satisfactorily described in the model of phase separation into small-radius metallic droplets in a paramagnetic matrix. The sizes R _ls and their temperature dependence have been estimated through magnetic measurements. The results confirm the existence of a Griffith phase. The intrinsic inhomogeneities produced by thermodynamic phase separation determine the electrical resistivity and magnetoresistance of lanthanum manganites.     

Conductivity, magnetoresistance, and the Hall effect in granular Fe/SiO2 films

We have investigated the conductance, magnetoresistance, and Hall effect in granular Fe/SiO₂ films with size of the iron grains around 40 Å, whose volume fraction x lies in the range 0.3–0.7. The conduction activation regime has been established for x<0.6. On the insulator side of the transition we observed a giant negative magnetoresistance, falling off sharply as the metal volume fraction decreases. For x<0.4 we observed a large positive magnetoresistance of premagnetized samples, showing up in fields; ～100 Oe and characterized by large response times. The field dependence of the Hall effect in the dielectric samples, as in the metallic samples, correlates with their magnetization. We found that the Hall resistance is proportional to the square root of the longitudinal resistance, which cannot be explained by known models of the anomalous Hall effect.     

Electron scattering with spin flip in indium antimonide and indium arsenide

The longitudinal magnetoresistance has been investigated at temperatures in the range from 2.8 to 200 K in a magnetic field of up to 200 kOe with the aim of determining the temperature range and the magnetic field strength at which charge carrier scattering with spin flip occurs in n-type indium arsenide and n-type indium antimonide. It is established that quantum oscillations of the longitudinal magnetoresistance of indium arsenide exhibit weak zero maxima due to electron scattering with spin flip at temperatures in the range from 4 to 35 K in a magnetic field of 146 kOe. For the longitudinal magnetoresistance of indium antimonide, zero maxima caused by electron scattering with spin flip are revealed in the temperature range from 60 to 80 K in a magnetic field of 132 kOe.     

Magnetic, electrical, and optical properties of electron-doped Ca1 − x LaxMnO3 − δ(x ≤ 0.12) single crystals

The magnetic, electrical, and optical properties of Ca_{1 ? x} La_xMnO_{3 ? δ}(x ≤ 0.12) manganite single crystals have been studied. The state with a spatially inhomogeneous electron distribution has been found. Interrelations between the electric and magnetic subsystems are analyzed. The obtained magnetic data show evidence for the formation of a G-type antiferromagnetic (G-AFM) phase with a spin-canted structure in the crystal with x = 0.05, for which the Curie and Néel temperatures are T _C = T _N(G) = 115 K. On cooling from the paramagnetic state, the crystals with x = 0.10 and 0.12 exhibit transitions from the paramagnetic to a C-type antiferromagnetic (C-AFM) phase in a part of the volume at T _N(C) = 150 and 200 K, and from the paramagnetic to the G-type antiferromagnetic (G-AFM) phase in the remaining volume at T _N(G) = 110 and 108 K, respectively. The onset of the C-type magnetic phase nucleation in crystals is observed at lower dopant (La) concentrations than in polycrystalline samples, which is explained by the deviation of single crystals from the stoichiometry with respect to oxygen. The magnetic phase transitions are manifested by anomalies in the electric resistance and magnetoresistance of doped crystals. An analysis of the electrical and optical properties of the samples shows evidence of (i) the formation of a charge energy gap in the C-AFM phase with retained paramagnetic metallic regions and (ii) the presence of ferromagnetic “metallic” droplets in the insulating G-AFM phase. The multiphase state of Ca_{1 ? x} La_xMnO_{3 ? δ} manganite single crystals featuring the coexistence of two magnetic phases, the regions with orbital/charge ordering, and the FM “metallic” droplets is related to a competition of exchange interactions by the superexchange and double exchange mechanisms.     

Connection between colossal magnetoresistance in La0.85Sr0.15MnO3 and magnetic ordering inhomogeneities of a sample

Resistive and magnetic measurements are made for La_0.85Sr_0.15MnO₃. The dependence of resistivity on the applied magnetic field (10, 20, 30, and 50 kOe) and temperature (200–310 K) is analyzed using the s-d model and the obtained experimental data. The physical features that should be contained in models proposed to explain the colossal magnetoresistance of manganites with activation-type conductivity are determined. It is shown that the proposed mechanism associating the colossal magnetoresistance effect with phase separation into ferromagnetic and paramagnetic microregions near the Curie temperature has the necessary features.     

Positive magnetoresistance effect in rare earth cobaltites

The structure, magnetic, and magnetotransport properties of the Pr_0.5Sr_0.5Co_{1 ? x} Fe _x O₃ system have been studied. The ferromagnet-spin glass (x = 0.5)-G-type antiferromagnet (x = 0.7) transitions and the metal—insulator transitions (x = 0.25) have been revealed. It has been established that the magnetoresistance of the metallic ferromagnetic cobaltites changes sign from positive to negative as the external magnetic field increases. The positive component increases and the negative component decreases with decreasing temperature. The negative magnetoresistance increases sharply in the insulating spinglass phase. Possible causes of the low-magnetic-field positive magnetoresistance in the rare earth metallic cobaltites are discussed.     

Hall constants and magnetoresistance in aluminium single crystals,studied by means of helicon resonances

The Hall coefficient and the transverse magnetoresistance in aluminium single crystals were determined from measurements on standing helicon waves, in the three main crystallographic directions [100], [110] and [111]. The magnetic fields ranged from 1 to 7T and the temperature from 4.2 to 20 K. A Legendy-type theory with parameters adapted to the separation of the satellites as measured at high fields gave good fittings over the whole field range. The Hall coefficients, determined in this work, decrease with magnetic field as mentioned in earlier publications, but are generally lower than those published previously for comparable field ranges.The transverse magnetoresistance as a function of temperature was determined from a continuous recording of the helicon response at resonance. The temperature dependent part of the resistivity varies according to a T³ law for all fields. The field dependence is close to linear, but indications of quadratic and saturation behaviour are also present.     

Longitudinal magnetoresistance in zero-gap CdxHg1−xTe at low temperatures

The longitudinal magnetoresistance Δ?₆(H)/?₀ is studied experimentally in gapless solid solutions Cd_xHg_1?xTe (0 < x < 0.15) for temperatures 1.3–15 K and the electron concentrations n ～ 10¹⁵ cm^?3. The temperature and the magnetic field dependences of the observed negative longitudinal magnetoresistance are explained by the resonant nature of electron scattering by an acceptor level. The quantitative analysis of the $\text{Δ?6(H)}\text{?}{}_0$ field dependence for weak magnetic fields under strong carrier degeneracy makes it possible to evaluate parameters of the acceptor level involved.     

Magnetic phase transition in ɛ-In x Fe2 − x O3 nanowires

This paper reports on a study of magnetic properties of ordered arrays of ?-In _x Fe_{2 ? x} O₃ (x = 0.24) nanowires possessing a high room-temperature coercive force of 6 kOe. Lowering the temperature below 190 K brings about a sharp decrease of the coercive force and magnetization of nanowires driven by the magnetic phase transition from the ferrimagnetic into antiferromagnetic phase. The transition is accompanied by a decrease of the magnetic anisotropy constant, which accounts for the anomalous frequency dependence of the position of the maximum in the temperature dependence of dynamic magnetic susceptibility. In the low-temperature phase, a spin-flop transition in the magnetic field of 28 kOe has been observed at T = 2 K. Lines related to the high-temperature hard-magnetic and low-temperature phases have been identified in electron spin resonance spectra of the nanowires. A line lying near zero magnetic field and evolving from the nonresonant signal related to the microwave magnetoresistance of the sample has also been detected.     

Clear experimental evidence for boundary and impurity scattering related crossover field scales in GaAs/AlGaAs split-gate wires

We study the magnetic field dependence of the correlation field ΔB_cand amplitude δgof the conductance fluctuations, observed in the low temperature magnetoresistance of GaAs/AlGaAs split-gate wires. Near zero field, universality of quantum interference is retained and the magnetoresistance shows universal conductance fluctuations. At high magnetic fields, although the discrete Landau level quantization becomes resolved. ΔB_cand δgare found to increase linearly with magnetic field, with a slope which depends upon the nature of electron scatterings in the wire.     

Anomalous electrical properties of Si/Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> heterostructures with an electron transport channel in Si layers

The electrical properties of elastically stressed FET-like Si/Si_{1 ? x} Ge _x layered heterostructures (x < 0.2) with a modulated dopant concentration are studied. It is presumed that the amplitude of a narrow (～6-nm-thick) potential well in the Si layer corresponds to the amplitude of a fluctuation potential giving rise to nanoscale inhomogeneities in the Si channel. The structures in question undergo a phase transition from the insulating to metallic behavior as the electron density in the Si channel is varied. In a magnetic field, the structures with metallic conductivity have negative magnetoresistance (NMR) for both the longitudinal and transverse directions of the applied magnetic field with respect to the transport current passing through the structure. Investigating the dependence of NMR on the magnetic field strength showed that the main contribution to NMR is due to weak localization. Peculiar properties are also found in electrical measurements of the diode characteristics of the structures in question. In particular, the capacitance-voltage characteristics of these structures show well-defined resonance features, possibly related to one-and quasi-zero-dimensional inclusions existing in addition to two-dimensional charge carriers in the inhomogeneous two-dimensional film.     

Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB₁₂ (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8–35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler’s rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB₁₂. In the magnetic dodecaborides HoB₁₂, ErB₁₂, and TmB₁₂, three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB₁₂ is observed at T > 25 K; in the range T _N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T < T _N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB₁₂. It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB₁₂ and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation.     

Structure-Dependent Magnetoresistance in the Zn<Subscript>0.1</Subscript>Cd<Subscript>0.9</Subscript>GeAs<Subscript>2</Subscript> + MnAs Hybrid Nanocomposite

The effect of high pressure on electron transport and on the field dependence of the transverse magnetoresistance has been studied in a hybrid nanocomposite based on the Zn0.1Cd0.9GeAs2 matrix and MnAs clusters. A record high negative magnetoresistance of ~74% is formed near a pressure-induced structural transition (P≈ 3.5 GPa). The considered scattering mechanisms include both the contribution from MnAs clusters at relatively low pressures (up to 0.7 GPa) and spin-dependent scattering by localized magnetic moments in the Mn-substituted structure of the matrix in the region of the structural transition. The presence of the positive magnetoresistance region associated with the two-band transport model in the high-pressure phase, as well as the large negative magnetoresistance, is described in the framework of the semiempirical Khosla–Fischer expression.     

Magnetotransport in core-shell Fe–Fe oxide nanostructures

Magnetic and magnetotransport measurements were performed on gas-phase synthesized Fe nanoparticles subjected to surface oxidation and cold consolidation. Two samples were investigated with α-Fe volume fraction of 0.15 and 0.60. The sample with smaller metallic fraction is below the percolation threshold for metallic conduction and the conduction mechanism is dominated by thermally activated processes across the oxide. In this case, by lowering the temperature, an increase of the negative magnetoresistance is observed up to 5% at 50 K in a magnetic field of 70 kOe. The magnetoresistance dependence on the sample magnetization, temperature and sample composition is discussed considering the magnetic correlations present in these nanostrucuterd systems.     

Effect of inhomogeneity on magnetic, magnetocaloric, and magnetotransport properties of La0.6Pr0.1Ca0.3MnO3 single crystal

The effect of magnetic inhomogeneity on magnetic, magnetocaloric, and transport properties of the colossal magnetoresistance manganites with first order ferromagnetic-to-paramagnetic phase transition is studied. The experiments were performed on the single-crystalline samples of La_0.6Pr_0.1Ca_0.3MnO₃. The inhomogeneity is described by the Curie temperature distribution function, which is found from the magnetization data. The temperature dependence of the magnetic field induced change in the entropy is shown to be determined by the distribution function and the shift of the transition temperature in a magnetic field. Similarly, magnetoresistance in the transition region is determined by the resistivity at H=0 and the shift of the transition temperature. The maximum entropy change as well as maximum magnetoresistance can be achieved in the magnetic field of order δT_C/B_M where δT_C is the transition width and B_M is the rate of change of the Curie temperature with magnetic field.Our approach to analysis of the effects of inhomogeneity is general and therefore can be used for all compounds with the first order magnetic phase transition.     

Angular studies of the magnetoresistance in the density wave state of the quasi-two-dimensional purple bronze KMo<Subscript>6</Subscript>O<Subscript>17</Subscript>

The purple molybdenum bronze KMo₆O₁₇ is a quasi-two-dimensional compound which shows a Peierls transition towards a commensurate metallic charge density wave (CDW) state. High magnetic field measurements have revealed several transitions at low temperature and have provided an unusual phase diagram “temperature-magnetic field”. Angular studies of the interlayer magnetoresistance are now reported. The results suggest that the orbital coupling of the magnetic field to the CDW is the most likely mechanism for the field induced transitions. The angular dependence of the magnetoresistance is discussed on the basis of a warped quasi-cylindrical Fermi surface and provides information on the geometry of the Fermi surface in the low temperature density wave state.