纳米硅(nc-Si:H )/晶体硅(c-Si)异质结太阳电池的数值模拟分析

运用美国宾州大学发展的AMPS程序模拟分析了n-型纳米硅（n+-nc-Si:H）/p-型晶体硅(p-c-Si)异质结太阳电池的光伏特性.分析表明，界面缺陷态是决定电池性能的关键因素，显著影响电池的开路电压（VOC）和填充因子（FF），而电池的光谱响应或短路电流密度（JSC）对缓冲层的厚度较为敏感.对不同能带补偿（bandgap offset）的情况所进行的模拟分析表明，随着ΔEc的增大，由于界面态所带来的开路电压和填充因子的减小逐渐被消除，当ΔEc达到05eV左右时界面态的影响几乎完全被掩盖.界面层的其他能带结构特征对器件性能的影响还有待进一步研究.最后计算得到了这种电池理想情况下（无界面态、有背面场、正背面反射率分别为0和1）的理论极限效率ηmax=3117% (AM15，100mW/cm2，040—110μm波段).     

The reason of degradation in electrical properties of ZnO:Al thin films annealed with various post-annealing temperature

ZnO:Al (AZO) thin films were deposited on glass substrates by RF magnetron sputtering at room temperature and post-annealed in rapid thermal annealing (RTA) system. The effect of post-annealing temperature on the structural, optical, and electrical properties was investigated. As the post-annealing temperature increased, electrical conductivity is deteriorated due to a decrease in the mobility or carrier concentration, gradually. According to X-ray photoelectron spectroscopy (XPS) analysis, the behavior of mobility and carrier concentration is attributed to increase the O₂ absorption on film surface, which act as rising the barrier potential at the low post-annealing temperature (200 °C) and reducing the density of donor-like defects at the high post-annealing temperature (400 °C). In case of post-annealing, the minimization of O₂ absorption is a very important factor to obtain better electrical properties.     

Study of the effects of unsupervised over‐the counter whitening products on dental enamel using μ‐Raman and μ‐EDXRF spectroscopies

The purpose of this in vitro study was to assess whether the mineralization degree and elemental content in tooth enamel are altered when bleaching the teeth with two different over‐the‐counter bleaching gels, exceeding the recommendations of the manufacturer. In order to perform this evaluation, 12 healthy teeth were used, six samples were treated with Teeth Whitening Home Kit, and the other six samples were treated with WHITE! (Bingo‐UK) bought in online shopping sites, for the period of 39 days. The pH of each product and the elemental content of each sample, before and after, were obtained by energy dispersive X‐ray spectrometry and phosphate (PO₄^3‐) profile was evaluated with Raman spectroscopy. Data was analyzed accordingly to a pre‐established plan with a mixed‐model ANOVA for repeated measures, significance was set at 5%. Both products were markedly acidic and below enamel critical level of 5.5. Moreover, seven days after treatment, demineralization was significant, wherein at the end of the study the degree of demineralization seems to be permanent. Copyright © 2015 John Wiley & Sons, Ltd.     

The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering

Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes' coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2?wt% Al₂O₃. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300?°C.     

Investigation on antireflection coatings for Al:ZnO in silicon thin-film solar cells

We numerically investigate the role of antireflection (AR) coatings, composed of SiO₂ and/or ZnO, in suppression of interfacial reflections in the presence of the transparent conducting oxide, Al-doped ZnO (AZO). Three structures are simulated: (a) AR coatings in organic light-emitting diodes (OLEDs) and flat panel displays, (b) AR coating located between the glass and the AZO, and (c) same as the case b except the involvement of another AR coating between the AZO and the amorphous silicon layers. The weighted average transmittance according to the AM1.5 solar spectrum, the photovoltaic transmittance (T_pv), suggests that there is no evident difference between the structures a and b, especially when the layer number of AR coatings is less than three. An effective way to improve T_pv is presented in the structure c, where T_pv is increased from 73.54% to 76.32% with a three-layered AR coating located between AZO and a-Si. It implies that the suppression of interfacial reflections, resulting from the considerable mismatch of refractive indices at the interface of AZO and a-Si, would benefit the efficiency improvement of silicon thin-film solar cells.     

Very thin,highly‐conductive ZnO:Al front electrode on textured glass as substrate for thin‐film silicon solar cells

A very thin (250 nm), highly conductive (annealed), non‐texturized DC‐sputtered aluminum‐doped zinc oxide layer (ZnO:Al) deposited on a textured glass is used as substrate for thin‐film silicon solar cells. Compared to the classical approach, where wet‐chemically texturized ZnO:Al on planar glass is used, this approach allows a reduction in the as‐deposited ZnO:Al thickness of almost 70% while at the same time, thanks to the good light trapping capability of the glass texture the efficiency of the cells was maintained at the high level of 10.9%.

     

Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications

Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800 nm in thickness were deposited on soda-lime glass substrates keeping at 473 K under 0.4 Pa working pressure, 150 W power, 100 μs duty time, 5 μs pulse reverse time, 10 kHz pulse frequency and 95% duty cycle. The as-deposited AZO thin films has resistivity of 6.39 × 10⁻⁴ Ω cm measured at room temperature with average visible optical transmittance, T_total of 81.9% under which the carrier concentration and mobility were 1.95 × 10²¹ cm⁻³ and 5.02 cm² V⁻¹ s⁻¹, respectively. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, 33% KOH, to conform light scattering properties. The resultant films etched in 0.5% HCl solution for 30 s exhibited high T_total = 78.4% with haze value, H_T = 0.1 and good electrical properties, ρ = 8.5 × 10⁻⁴ Ω cm while those etched in 5% oxalic acid for 150 s had desirable H_T = 0.2 and relatively low electrical resistivity, ρ = 7.9 × 10⁻⁴ Ω cm. However, the visible transmittance, T_total was declined to 72.1%.     

Metal-oxide-semiconductor field effect transistor using ‘oxidizedμc-Si/ultrathin oxide’ gate structure

The metal-oxide-semiconductor (MOS) field effect transistor (FET) using ‘oxidized μ c-Si/ultrathin oxide’ gate structure was studied. It was found that this structure shows negative differential resistance behavior, which can be explained by the Coulomb blockade effect of trapped carriers and immediate tunneling into and tunneling out with gate bias variation. The requirements for the device with this structure showing negative differential resistance behavior are based on very weak resistive coupling between floating gate and channel. They are the thinness of the tunnel oxide film, the thickness ratio of the upper oxidized film and the tunnel oxide, and the channel threshold voltage. MOSFET with this gate structure is proposed as a new negative differential resistance device.     

Output properties of 1.57 μm intracavity pumped optical parametric oscillator

A 1.57 μm eye-safe laser is realized by placing a KTP crystal into a diode-end-pumped, acousto-optically (AO) Q-switched Nd:YVO4 laser. For the first time, the 1.06 μm pumping laser with a concave–concave cavity is used to lower the threshold of the intracavity-pumped optical parametric oscillator (IPOPO). The pumping threshold and output characteristics of the OPO are analyzed by changing repetition rate of the AO Q-switch and output mirrors with different transmissivity at 1.57 μm. The results show that the pumping threshold will decrease with the lower output transmissivity and the lower repetition rate, but the narrower output pulse width can be obtained with the higher output transmissivity.     

Efficient diode-pumped Nd:YVO4 continuous-wave laser at 1.34 μm

We report a high-power continuous-wave(cw) diode-pumped efficient 1.34 μm Nd:YVO₄ laser. The laser properties of a low Nd³⁺-doped concentration of the Nd:YVO₄ crystal operating at 1.34 μm formed with a simple plane-concave cavity have been demonstrated. With the incident pump power of 22 W, an output power of 8.24 W was obtained, giving an optical conversion efficiency of 37.5% and slope efficiency of 40%. The thermal effects of cw end-pumped solid-state lasers were studied.     

STEM-study of 1.3 μm InAs/InGaAs quantum dot structures

We investigated InAs-Dots-in-a-well structures emitting near 1.3 μm by bright field and Z-contrast mode in a scanning transmission electron microscope. The chemically sensitive Z-contrast mode is found to give direct information on the actual position of the InAs-Dots inside the embedding well, while the bright field mode monitors the strain fields. Comparing a series of structures, we found that the most symmetric design is realized by an nominally asymmetric growth. These symmetric structures exhibit the best performance with respect to photoluminescence spectra and laser threshold current density.     

cis‐substituted tetraethynylporphyrin derivatives for small molecule organic solar cells

A 5,10‐Bis(phenylethynyl)‐15,20‐bis(triisopropylsilylethynyl)porphyrin (cis‐TIPSTEP) was synthesized by using phenylethynyl dipyrromethane and triisopropylsilylpropynal through scrambling of the ethynyl substituents. X‐ray crystallographic structures of cis‐TIPSTEP, 5‐phenylethynyl‐10,15,20‐tris(triisopropylsilylethynyl)porphyrin, and 5,10,15,20‐tetrakis(triisopropylsilylethynyl)porphyrin were determined in order to study the packing structure; cis‐TIPSTEP exhibited good π‐overlap and parallel π‐stacking structures. 5,10‐Bis(phenylethynyl)‐15,20‐bis(triisopropylsilylethynyl)porphyrinato magnesium (II) (Mg‐cis‐TIPSTEP) was synthesized for the use in small molecule organic solar cells, which gave power conversion efficiency of 1.5% with short‐circuit current density of 4.5 mA/cm², open‐circuit voltage of 0.83 V, and fill factor of 0.39. Copyright © 2013 John Wiley & Sons, Ltd.     

Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

Phosphorous-doped hydrogenated nanocrystalline silicon oxide(n-nc-SiO_x:H) films are prepared via radio frequency plasma enhanced chemical vapor deposition(RF-PECVD). Increasing deposition power during n-nc-SiO_x:H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO_x:H film. In addition,in 20 s interval before increasing the deposition power, high density small grains are formed in amorphous SiO_x matrix with higher crystalline volume fraction(I_c) and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO_x:H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO_x back reflector, with a constant power used in deposition process,the sample with gradient power SiO_x back reflector can enhance the total short-circuit current density(Jsc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively.     

CH3NH3PbI3/poly‐3‐hexylthiophen perovskite mesoscopic solar cells: Performance enhancement by Li‐assisted hole conduction

To address if the non‐triphenylamine derivative hole transporting materials such as P3HT (poly‐3‐hexylthiophene) could also exhibit high device efficiency in mesoscopic MAPbI₃ perovskite solar cells, we examined the effect of Li‐TFSI (Li‐bis(trifluoromethanesulfonyl) imide) and t‐BP (4‐tert‐butylpyridine) additives added in P3HT on device performance. Unlike the triphenylamine HTMs, the P3HT thiophene HTM without amine moiety was not doped by the additives but its conductivity was significantly improved by the Li‐TFSI/t‐BP mediated additional hole conduction. By inclusion of Li‐TFSI/t‐BP additive, we could fabricate more efficient mesoscopic MAPbI₃ perovskite solar cells with smaller hysteresis with respect to scan direction due to Li mediated additional hole conduction. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Signal intensity enhancement of μ-LIF by using ultra-thin laser sheet illumination and aqueous mixture with ethanol/methanol for micro-channel applications

Measurement of concentration distributions of suspended particles in a micro-channel is one of the most crucial necessities in the area of Lab-on-a-chip to be used for various bio-chemical applications. One most feasible way to measure the concentration field in the micro-channel is using μ-LIF (micro-scale laser-induced fluorescence) method. However, an accurate concentration field at a given cross-plane in a micro-channel has not been successfully achieved so far due to various limitations in the light illumination and fluorescence signal detection. The present study demonstrates a novel method to provide an ultra-thin laser sheet beam having 5 μm thickness using a micro-focus laser line generator. The laser sheet beam illuminates an exact plane of concentration measurement field to increase the signal-to-noise ratio and considerably reduce the depth uncertainty.Nile Blue A was used as fluorescent dye for the present LIF measurement. The enhancement of the fluorescent intensity signals was performed by a solvent mixture of water (95%) and ethanol (EtOH)/methanol (MeOH) (5%) mixture. To reduce the rms errors resulting from the CCD electronic noise and other sources, an expansion of grid size was attempted from 1×1 to 3×3 or 5×5 pixel data windows and the pertinent signal-to-noise level has been noticeably increased accordingly.     

High temperature (T>300 K) light emitting diodes for 8–12 μm spectral range

Contrary to conventional light emitting diodes for visible and very near infrared utilizing interband (ω>E_g) luminescence, the longer infrared emitting diodes (LIREDs) we describe here utilize intraband (ω<E_g) electron transitions and emit beyond the fundamental absorption range of the material used. Made of indirect band gap semiconductors (like Ge, Si) and, therefore, free from the Auger recombination impact, LIREDs efficiently operate at higher temperatures (T>300 K) in the longer wavelength atmospheric window (8–12 μm). Electrically modulated power emitted is comparable to that for black body sources whereas shorter rise–fall times are due to recombination processes (200 μs) and not dependent on pixel thermal mass and thermal conduction. LIREDs can be made of different semiconductor structures provided the controllable modulation of free carrier concentration in the device base is achieved. The main parameters of Ge based LIREDs under injection mode are reported.     

Assessment of bone calcium and phosphorus content using micro X‐ray fluorescence spectrometry (μ‐EDXRF): effects of long‐term cadmium poisoning

This study assesses whether the concentrations of biologically important elements in bones are altered by long‐term consumption of cadmium (Cd)‐contaminated water. Heavy metal poisoning has significant impact on humans, and pollutants such as Cd are often found at high concentrations in waterways. Twelve Sprague Dawley rats consumed water with 50 p.p.m. Cd (Cd group), and another 12 consumed normal water (control group). Six subjects from each group were sacrificed after 2 weeks and the others after 4 weeks. Spectra were acquired from the femur by using the EDAX Eagle III micro‐XRF setup, and quantitative calculations were performed by using the fundamental parameter method to determine the concentrations of elements. A bone calcium/phosphorus concentration ratio (Ca/P) of 2.07 ± 0.001 is observed in the spectra from control subjects after 2 weeks and 2.07 ± 0.001 after 4 weeks. In Cd subjects, Ca/P after 2 weeks is 2.04 ± 0.001 and after 4 weeks is 1.97 ± 0.003. Statistically significant differences are obtained when comparing controls with Cd subjects at both time points and when comparing Cd subjects at both time points. Cadmium poisoning significantly affects bone Ca and P concentrations, increasing the likelihood of osteoporosis and other bone diseases. Copyright © 2016 John Wiley & Sons, Ltd.     

Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO₂ and investigated their electrical properties using the light current–voltage (I–V) curve and Suns-V_oc measurements. The light I–V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-V_oc measurements showed that the bias-dependence of the light I–V curves did not originate from the recombination in the SiO₂/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I–V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J_sc and fill factor in n-type based Si heterojunction solar cells.     

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Quantitative evaluation method for electroluminescence images of a‐Si:H thin‐film solar modules

This work presents a method for extracting the absolute local junction voltage of a‐Si:H thin‐film solar cells and modules from electroluminescence (EL) images. It is shown that the electroluminescent emission of a‐Si:H devices follows a diode law with a radiative ideality factor n_r larger than one. We introduce an evaluation method that allows us to determine the absolute local junction voltage in cases of n_r > 1, while existing approaches rely on the assumption of n_r = 1. Furthermore, we find that the experimentally determined values of n_r vary from sample to sample. It is also explained why the derived radiative ideality factor is influenced by the spectral sensitivity of the camera system used in the experiment. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)