Dielectric study and ac conductivity of iron sodium silicate glasses

A series of glasses with formula (SiO₂)_0.7−x(Na₂O)_0.3(Fe₂O₃)_x with ( 0.0 ≤ x ≤ 0.20) were prepared and studied by means of AC measurements in the frequency range 20 kHz to 13 MHz at room temperature. The study of frequency dependence of both dielectric constant ε' and dielectric loss ε" showed a decrease of both quantities with increasing frequency. The results have been explained on the basis of frequency assistance of electron hopping besides electron polarization. From the Cole-Cole diagram the values of the static dielectric constant ε_s, infinity dielectric constant ε_∞, macroscopic time constant τ, and molecular time constant τ_m are calculated for the studied amorphous samples. The frequency dependence of the ac conductivity obeys a power relation, that is σ_ac (ω) = Α ω^s. The obtained values of the constant s lie in the range of 0.7 ≤ s ≤ 1 in agreement with the theoretical value which confirms the simple quantum mechanical tunneling (QMT) model. The increase in ac conductivity with iron concentration is likely to arise due to structural changes occurring in the glass network. The structure of a glass with similar composition was published and showed clustering of Fe²⁺ and Fe³⁺ ions which favor electron hopping and provide pathways for charge transport.     

Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx:H/p-Si structure

Admittance (Y_m) versus applied gate bias (V_G) on MIS structure (Cr/a-SiNx:H/p-Si) was measured as a function of frequency (mHz-MHz)/temperature (77-400 K) as parameters to investigate minority carrier behavior. Strong frequency dispersion in measured capacitance at inverting gate bias (positive biases for p-type silicon substrate) and low frequency behavior in capacitance-voltage (C-V) curves under high measuring frequencies (above kHz) at 300-400 K temperature interval are reported. This phenomenon is interpreted via lateral hopping conductivity of self-inversion charges beyond the gate inside a-SiNx:H film near interface as generation mechanism of minorities with a lower activation energy (0.11 eV) rather than prevailing mechanisms of much higher activation energies (namely, generation-recombination and diffusion).     

Johari-Goldstein relaxation as the origin of the excess wing observed in metallic glasses

Measurements of the shear loss modulus G″ of amorphous Zr₆₅Al_7.5Cu_27.5 at 5.4 kHz were reported by Rösner, Samwer and Lunkenheimer. They observed that the measured G″ are in excess of the contribution from the α-relaxation, indicating the existence of an ‘excess wing’ in amorphous metals like that found in molecular glass-formers. They speculated that the excess wing found in amorphous metal is due to the presence of an unresolved Johari-Goldstein (JG) secondary relaxation. In this work, the coupling model is used to calculate the temperature T_JG at which the JG relaxation frequency coincides with the experimental frequency of the isochronal measurement. The location of T_JG is well within the temperature range where the excess wing of Zr₆₅Al_7.5Cu_27.5 appears at 5.4 kHz. Hence, the result supports the assertion of Rösner et al. that the excess wing found in the metallic glass originates from the intrinsic JG relaxation.     

The dielectric behavior of a thermoelectric treated B2O3-Li2O-Nb2O5 glass

A transparent glass with the composition 60B₂O₃-30Li₂O-10Nb₂O₅ (mol%) was prepared by the melt-quenching technique. Glass-ceramics, containing LiNbO₃ ferroelectric crystallites, were obtained by heat-treatment (HT) above 500 °C, with and without the presence of an external electric field. The dielectric properties of the glass and glass-ceramic were investigated, as a function of temperature (270-315 K), in the 10 mHz-32 MHz frequency range. The presence of an external electric field, during the heating process, improves the formation of LiNbO₃ crystallites. The rise of the treatment temperature and the applied field, during the heat-treatment, leads to a decrease in the dc electric conductivity (σ_dc), indicating a decrease of the charge carriers number. The dielectric permittivity (ε′) values (300 K;1 kHz) are between 16.25 and 18.83, with the exception of the 550 °C HT sample that presents a ε′ value of 11.25. An electric equivalent circuit composed by an R in parallel with a CPE element was used to adjust the dielectric data. The results reflect the important role carried out by the heat-treatment and the electric field during the HT in the electric properties of glass-ceramics.     

Determination of mechanical, electrical and thermal properties of the Sn―Bi―Zn ternary alloy

The development of lead-free solders has emerged as one of the key issues in the electronics packaging industries. Sn―Zn―Bi eutectic alloy has been considered as one of the lead-free solder materials that can replace the toxic Pb―Sn eutectic solder without increasing soldering temperature. This study investigates the effect of temperature gradient and growth rate on the mechanical, electrical and thermal properties of the Sn―Zn―Bi eutectic alloy. Sn-23 wt.% Bi-5 wt.% Zn alloy was directionally solidified upward with different growth rates (V = 8.3-478.6 μm/s) at a constant temperature gradient (G = 3.99 K/mm) and with different temperature gradients (G = 1.78-3.99 K/mm) at a constant growth rate (V = 8.3 μm/s) in the Bridgman-type growth apparatus. The microhardness (HV), tensile stress (σ_t) and compressive stress (σ_c) were measured from directionally solidified samples. The dependency of the HV, σ_t and σ_c for directionally solidified Sn-23 wt.% Bi-5 wt.% Zn alloy on the solidification parameters (G, V) were investigated and the relationships between them were obtained by using regression analysis. According to present results, HV, σ_t and σ_c of directionally solidified Sn-23 wt.% Bi-5 wt.% Zn alloy increase with increasing G and V. Variations of electrical resistivity (ρ) for cast samples with the temperature in the range of 300-420 K were also measured by using a standard dc four-point probe technique. The enthalpy of fusion (ΔH) and specific heat (C_p) for same alloy was also determined by means of differential scanning calorimeter (DSC) from heating trace during the transformation from eutectic liquid to eutectic solid.     

Electrical conductivity studies in single and mixed alkali doped cobalt-borate glasses

The glasses of the type (Li₂O)_x-(CoO)_0.2-(B₂O₃)_0.8−x and (Li₂O)_0.2-(K₂O)_x-(CoO)_0.2-(B₂O₃)_0.6−x were prepared by melt quench technique and their non-crystallinity has been established by XRD studies. The glasses were investigated for room temperature density and dc electrical conductivity in the temperature range 300-550 K. Molar volumes were estimated from density data. Composition dependence of density and molar volume in both the sets of glasses has been discussed. Conductivity data has been analyzed in the light of Mott’s Small Polaron Hopping (SPH) Model and activation energies were determined. Variation of conductivity and activation energy with Li₂O content in single alkali glasses indicated change over conduction mechanism from predominantly electronic to ionic, at 0.4 mole fraction of Li₂O. In mixed alkali glasses, the conductivity has passed through minimum and activation energy has passed through maximum at x = 0.2. This has been attributed to the mixed alkali effect. It is for the first time that a change over of predominant conduction mechanism in lithium-cobalt-borate glasses and mixed alkali effect in lithium-potassium-cobalt-borate glasses has been observed. Various physical and polaron hopping parameters such as polaron hopping distance, polaron radius, polaron binding energy, polaron band width, polaron coupling constant, effective dielectric constant, density of states at Fermi level have been determined and discussed.     

Spectroscopic and dielectric properties of a lithia-containing glass

Glass of the composition 65SiO₂-20CaO-15Li₂O (mol %) was prepared and subjected to heat treatment. The obtained samples were characterized before and after heat treatment by DTA, TG, XRD, SEM, IR and dielectric spectroscopy. DTA showed an endothermic peak at 954 °C, accompanied by a pronounced change in the microstructure, as revealed by SEM. XRD showed that metasilicate predominates on heat treatment at 726 °C, while on heat treatment at 726 °C, then at 954 °C, disilicate crystallizes as the main phase. The IR spectra of the heat-treated glasses revealed that the vibrations of O-H groups are drastically decreased, while those due to non-bridging oxygens Si-O⁻ are increased. The dielectric constant (ε′), the loss tangent (tan δ) and the ac conductivity (σ_ac) for the prepared glasses were investigated before and after heat treatment over a moderately wide range of frequency and temperature. The activation energy of the dielectric relaxation process was found to depend on the techniques of sample preparation. A drop of dielectric constant values was observed for the heat-treated sample, which can be attributed to the ordering of the induced crystalline phases. The conductivity behavior suggests a hopping mechanism responsible for conduction.     

Investigation on dielectric relaxations of PVP-NH4SCN polymer electrolyte

Poly (N-vinyl pyrrolidone) (PVP) and ammonium thiocyanate (NH₄SCN) based polymer films with different compositions have been prepared by solution casting technique. The amorphous nature of the polymer electrolytes has been confirmed by XRD analysis. The FTIR analysis confirms the complex formation of the polymer with the salt. The conductivity analysis shows that the 20 mol% ammonium thiocyanate doped polymer electrolyte has high ionic conductivity and it has been found to be 1.7 × 10⁻⁴ S cm⁻¹, at room temperature. From the admittance plot, the activation energy has been found to be low for 20 mol% salt doped polymer electrolyte. The dielectric behavior has been analyzed using dielectric permittivity (ε^∗), dissipation factor (tan δ) and electric modulus (M^∗) of the samples.     

Molecular orientation and dielectric anisotropy properties of 4-cyano-4′-n-heptylbiphenyl-TiO2 liquid crystal composite

The molecular orientation and the dielectric anisotropy of the nematic liquid crystal (LC) 4-cyano-4′-n-heptylbiphenyl (7CB) and of TiO₂-doped 7CB have been investigated. The dielectric properties of the LCs exhibit a relaxation peak that shifts to lower frequencies with increasing voltages. The relaxation frequencies of 7CB and 7CB/TiO₂ liquid crystals were calculated and found to decrease as the bias voltage increases. This is attributed to molecular reorientation. The dielectric anisotropy of the LCs changes from the positive type to negative type and the static electric permittivity and dielectric anisotropy values were found to be lower for the 7CB/TiO₂ system.     

Electrical characterisation of SrTiO3/Si interfaces

Deposition of SrTiO₃ (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (D_it) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of D_it between 2×10¹¹ and 3.5×10¹² eV⁻¹ cm⁻² while the higher temperature deposited samples had a higher D_it ranging between 1×10¹¹ and 1×10¹³ eV⁻¹ cm⁻². The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry.     

Investigation of near constant loss contribution to conductivity in lithium bismo-silicate glasses

Glasses having compositions 20Li₂O · (80 − x)Bi₂O₃ · xSiO₂ (x = 55, 60, 65, 70 mol%) were investigated using impedance spectroscopy in the frequency range from 20 Hz to 1 MHz and in the temperature range from 543 to 663 K. The ac and dc conductivities, activation energy of the dc conductivity and relaxation frequency are extracted from the impedance spectra. The increase in conductivity with increase in SiO₂ content is attributed to the change in the structural units of bismuth. Both electric modulus and the conductivity formalism have been employed to study the relaxation dynamics of charge carriers in these glasses. A single ‘master curve’ for normalized plots of all the modulus isotherms observed for a given composition indicates the temperature independence of the dynamic processes for ions in these glasses. Similar values of activation energy for dc conduction and for conductivity relaxation time indicates that the ions overcome same energy barrier while conducting and relaxing. The observed conductivity spectra follows power law with exponent ‘s’ which increases regularly with frequency and approaches unity at higher frequencies. Near constant losses (NCL) characterize this linearly dependent region of conductivity spectra. A deviation from ‘super curve’ for various isotherms of conductivity spectra was also observed in high frequency region and at low temperatures, which supports the existence of different dynamic processes like NCL in addition to the ion hopping processes in the investigated glass system.     

Thermal and electric transport properties of (60−x)V2O5–xAs2O3–20Fe2O3–10CaO–10Li2O unconventional glassy system

This paper presents the results of kinematical studies of glass transition and crystallization in the unconventional glassy system (60?x)V₂O₅–xAs₂O₃–20Fe₂O₃–10CaO–10Li₂O (x = 0, 10, 20, 30, 40 mol%) using differential scanning calorimetry (DSC). The glass transition temperatures (T_g), the onset crystallization temperatures (T_c), and the peak temperatures of crystallization (T_p) were found to be dependent on the compositions and the heating rates. From the dependence on heating rates of (T_g) and (T_p) the activation energy for glass transition (E_g) and the activation energy for crystallization (E_c) are calculated. The thermal stability of (60?x)V₂O₅–xAs₂O₃–20Fe₂O₃–10CaO–10Li₂O was evaluated in term of, criteria ΔT = T_c ? T_g. All the results confirm that the thermal stability increase with increasing As₂O₃ contents. From the electric–dielectric measurements it was found that, σ_dc, σ_ac(ω) and θ_D/2 decrease with increasing As₂O₃ contents. It is also observed that the dielectric constant (ε₁(ω)) and the loss factor (tan δ) decrease with increasing As₂O₃ contents in this glass system.     

Underlying reverse current mechanisms in a-Si:H p-i-n solar cell and compact SPICE modeling

The defect states in bulk of i-layer and at p⁺/i interface have been studied by using dark reverse current-voltage (J-V) measurements. The dark reverse current as a function of voltage has been analyzed on the basis of thermal generation of the carriers from mid-gap states in i-layer. Based on its behavior the thermal generation mechanism has been divided into two types. Thermal generation at lower bias (<5 V) shows V^1/2 behavior, whereas at higher bias follows an exponential dependence of voltage (>5 V). This was explained using a thermal generation zone at lower bias, which is a source of reverse currents, and its evolution towards p⁺/i interface with increasing voltage. The analytical result has shown that at lower reverse bias (V < 5 V) the defect states in the bulk of i-layer and at higher bias (V ∼ 25 V) the defect states at p⁺/i interface are contributing to the reverse currents. Reverse bias annealing (RBA) treatment which has been performed on these cells shows that a reduction of defect states more in the i-region near to the p⁺-layer and at p⁺/i interface as compared to the deep regions in bulk of i-layer. The calculated defect state density (DOS) is varying from its intrinsic value of 2.4 × 10¹⁷ cm⁻³ in the bulk of the i-layer up to 2.1 × 10¹⁹ cm⁻³ near and at p⁺/i interface. These values decrease to 7.1 × 10¹⁶ cm⁻³ and 2.7 × 10¹⁷ cm⁻³, respectively, in the samples annealed under reverse bias at 2 V. The bias dependent leakage current behavior has been modeled and implemented in simulation program with integrated circuit emphasis (SPICE) using simple circuit elements based on voltage controlled current sources (VCCS). Simulated and measured reverse leakage current characteristics are in reasonable agreement.     

Electrical conductivity and dielectric relaxation in non-crystalline films of tungsten trioxide

Amorphous tungsten trioxide (a-WO₃) thin films were prepared by thermal evaporation technique. The electrical conductivity and dielectric properties of the prepared films have been investigated in the frequency range from 100 Hz to 100 kHz and in the temperature range 293–393 K. In spite of the absence of the dielectric loss peaks, application of the dielectric modulus formulism gives a simple method for evaluating the activation energy of the dielectric relaxation. The frequency dependence of σ(ω) follows the Jonscher’s universal dynamic law with the relation σ(ω) = σ_dc + Aω^s, where s is the frequency exponent. The conductivity in the direct regime, σ_dc, is described by the small polaron model. The electrical conductivity and dielectric properties show that Hunt’s model is well adapted to a-WO₃ films.     

Deposition of mechanically hard amorphous carbon nitride films from decomposition of BrCN. Effects of substrate cooling and pulsed rf-bias voltage

Mechanically hard amorphous carbon nitride films were formed by applying a combination of radio frequency (RF) bias voltage to the substrate and the chemical vapor deposition process using the decomposition reaction of BrCN with the microwave discharge flow of Ar. Cooling water was circulated inside the substrate stage. The maximum hardness was (17 ± 1) GPa for the film prepared under the negative RF bias voltage, −V_RF, of 30 V. This hardness was nearly twice that of the film prepared without cooling, suggesting that substrate cooling was effective for suppressing the relaxation of the internal stress of the film due to the temperature rise during the application of the RF bias voltage. Under the continuous operation of the RF bias voltage, films cannot be formed for −V_RF > 40 V because of the sputtering by the bombardment of energetic Ar⁺. Then, the RF bias voltage was applied with a pulsed operation. By using this operation films were prepared in the range of −V_RF = 40-100 V. The hardness, (36 ± 10) GPa, was obtained for the film obtained under the conditions of −V_RF = 100 V, the pulse period of 1000 s, and the pulse-on time of 800 s. The observed hardness scattered largely for the different observation points within this film; a single observation point in that film showed the maximum hardness of 46 GPa. According to the IR spectra of the films, the three-dimensional C-N network structure was developed.     

Ac conductivity and dielectric relaxation in ionically conducting soda-lime-silicate glasses

The frequency dependent conductivity and dielectric relaxation of alkali ions in some soda-lime-silicate (Na₂O-CaO-SiO₂) glasses are investigated over a frequency range from 50 Hz to 1 MHz and in a temperature range from room temperature to 603 K by using alternating current impedance spectroscopy. The conductivity isotherms show a transition from frequency independent dc region to dispersive region where the conductivity continuously increases with increasing frequency. The electric modulus representation has been used to provide comparative analysis of the ion transport properties in these glasses. The scaling behavior of imaginary part of electric modulus indicates that all dynamical processes occurring at different frequencies give the same activation energy.     

Debye type dielectric relaxation in carbon nano-balls’ and 4-DMAABCA acid doped E7 coded nematic liquid crystal

The electrical properties of carbon nano-balls’ and 4-dimethylaminoazobenzene-2′-carboxylic acid doped dispersed nematic liquid crystal composite were investigated by impedance spectroscopy technique. The conductivity and capacitance were measured in the frequency range 100 kHz-1 MHz and temperature range 300-380 K. The loss peak was observed in the dielectric loss spectra and was identified as nearly-Debye type relaxation. Cole-Cole plots have been used to describe the characteristic changes of electrical properties in mentioned temperature interval. The sample presents monodispersive relaxation behavior with a relaxation time of ∼10⁻⁷ s. The relaxation process is attributed to the dipolar rotation of the long molecular axis and the activation energy is found to be 0.097 eV.     

Tunneling in sub-5 nm La2O3 films deposited by E-beam evaporation

We investigate the leakage current in ultrathin (sub-5 nm) La₂O₃ dielectric films deposited on n-Si (1 0 0) substrates by electron-beam evaporation and annealed in situ in ultra-high vacuum conditions. We show that simple tunneling models both for the direct and Fowler-Nordheim conduction regimes can accurately reproduce the measured current-voltage characteristics over a wide voltage range. In the latter regime, it is shown the importance of considering the series resistance effect to account for the shape of the characteristics. We propose a method to obtain the series resistance’s value based on the linearization of the Fowler-Nordheim plot. Some experimental features in combination with an exploratory analysis of the fitting parameters seem to indicate that the current flow through the structure is mostly localized, which is attributed to the existence of thickness non-uniformities in the oxide layer. In addition, we show that the application of electrical stress creates traps or defects within the insulator that leads to a progressive increase of the leakage current and to a change of the dominant conduction mechanism at the lowest biases.     

Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Dielectric layer containing CoSi₂ nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp₂ and NH₃ plasma mixed with SiH₄ without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi₂ nanocrystal. The gate stack composed of dielectric layer containing CoSi₂ nanocrystals with ALD HfO₂ capping layer together with Ru metal gate was analyzed by capacitance–voltage (C–V) measurement. Large hysteresis of C–V curves indicated charge trap effects of CoSi₂ nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.     

Electronic relaxation in zinc iron phosphate glasses

The electrical and dielectric properties of 10ZnO-30Fe₂O₃-60P₂O₅ (mol%) glasses, melted at different temperatures were measured by impedance spectroscopy in the frequency range from 0.01 Hz to 3 MHz and over the temperature range from 303 to 473 K. It was shown that the dc conductivity strongly depends on the Fe(II)/[Fe(II) + Fe(III)] ratio. With increasing Fe(II) ion content from 17% to 37% in these glasses, the dc conductivity increases. Procedure of scaling conductivity data measured at various temperatures into a single master curve is given. The conductivity of the present glasses is made of conduction and conduction-related polarization of the polaron hopping between Fe(II) and Fe(III), both governed by the same relaxation time, τ. The high frequency dispersion in electrical conductivity arises from the distribution in τ caused by the disordered glass structure. The evolution of the complex permittivity as a function of frequency and temperature was investigated. At low frequency the dispersion was investigated in terms of dielectric loss. The thermal activated relaxation mechanism dominates the observed relaxation behavior. The relationship between relaxation parameters and electrical conductivity indicates the electronic conductivity controlled by polaron hopping between iron ions.