A low silica, barium borate glass-ceramic for use as seals in planar SOFCs

A low silica, barium borate glass-ceramic for use as seals in planar SOFCs containing 64 mol%BaO, 3 mol%Al₂O₃ and 3 mol%SiO₂ was studied. Coefficient of thermal expansion (CTE) between 275-550 °C, glass transition temperature (T_g), and dilatometric softening point (T_s) of the parent glass were 11.9 × 10⁻⁶ °C⁻¹, 552 °C, and 558 °C, respectively. Glass-ceramic was produced by devitrification heat treatment at 800 °C for 100 h. It was found that nucleation heat treatment, seeding by 3 wt%ZrO₂ as glass-composite and pulverization affected the amount, size and distribution of crystalline phases. SEM-EDS and XRD results revealed that crystalline phases presented in the devitrified glass-ceramic were barium aluminate (BaAl₂O₄), barium aluminosilicate (BaAl₂Si₂O₈) possibly with boron associated in its crystal structure, and barium zirconate (BaZrO₃). CTE of the devitrified glass-ceramic was in the range of (10.1-13.0) × 10⁻⁶ °C⁻¹. Good adhesion was obtained both in the cases of glass and devitrified glass-ceramic with YSZ and AISI430 stainless steel. Interfacial phenomena between these components were discussed.     

One master curve for self-diffusion of one atom in different glass-forming liquids

Self-diffusion of a single atom α in glass-forming liquids, A_xB_yC_z ?, is studied from a unified point of view based on the mean-field theory (MFT) proposed recently by the present author, where α ∈ {A, B, C,...} and x + y + z + cdots = 100. Several experimental data and simulation results available at present are then analyzed consistently with the aid of MFT. Thus, it is shown that there exists a master curve for the long-time self-diffusion coefficient D_S^L(α)of α atom, even though atom α belongs to any different multicomponent glass-forming liquids. This suggests that if a whole data set for D_S^L(α) in a simple glass-forming liquid is once found, only one data point for α atom in any other complex glass-forming liquids is enough to predict a whole control parameter dependence of D_S^L(α) for each α atom belonging to those liquids.     

Arrhenius model for high-temperature glass-viscosity with a constant pre-exponential factor

A simplified form of the Arrhenius equation, ln η = A + B(x)/T, where η is the viscosity, T the temperature, x the composition vector, and A and B the Arrhenius coefficients, was fitted to glass-viscosity data for the processing temperature range (the range at which the viscosity is within 1-10³ Pa s) while setting A = constant and treating B(x) as a linear function of mass fractions of major components. Fitting the Arrhenius equation to over 550 viscosity data of commercial silicate glasses and approximately 1000 viscosity data of glasses for nuclear-waste glasses resulted in the A values of −11.35 and −11.48, respectively. The fraction of the variability (R²) value ranged from 0.92 to 0.99 for commercial glasses and was 0.98 for waste glasses. The Arrhenius models estimate viscosities for melts of commercial glasses containing 42-84 mass% SiO₂ within the temperature range of 1100-1550 °C and viscosity range of 5-400 Pa s and for waste glasses containing 32-60 mass% SiO₂ within the temperature range of 850-1450 °C and viscosity range of 0.4-250 Pa s.     

Thermo-optic properties of B2O3 doped Li2O-Al2O3-SiO2 glass-ceramics

Reduction in the temperature coefficient of the optical path length, dS/dT of Li₂O-Al₂O₃-SiO₂ glass-ceramics with near-zero thermal expansion coefficient was attempted using control of the temperature coefficient of electronic polarizability, ?, and the thermal expansion coefficient, α. The dS/dT value of 2.6 mol% B₂O₃-doped glass-ceramic was 12.5  × 10⁻⁶/°C, which was 0.9 ×  10⁻⁶/°C smaller than that of B₂O₃-free glass-ceramic. On the other hand, reduction in dS/dT through B₂O₃ doping was not confirmed in precursor glasses. Results showed that reduction in dS/dT of the glass-ceramic through B₂O₃ doping is caused by the reduction in ?. The reduction in ? from B₂O₃ doping was probably attributable to numerical reduction in non-bridging oxide ions with larger ? value by the concentration of boron ions in the residual glass phase. In addition, application of hydrostatic pressure during crystallization was effective to inhibit precipitation of β-spodumene solid solution, which thereby decreases dS/dT. The dS/dT value of B₂O₃-doped glass-ceramic crystallized under 196 MPa was 11.7 ×  10⁻⁶/°C. That value was slightly larger than that of silica glass. The α value of this glass-ceramic was smaller than that of silica glass.     

Role of the poly-dispersity and the dipolar interaction in magnetic nanoparticle systems: Monte Carlo study

In this paper, roles of the poly-dispersity and the dipolar interaction in frozen ferrofluid are studied by Monte Carlo method. A sample containing the uniaxial anisotropy and the random orientation is used to investigate. The temperature dependence of the coercivity is calculated to consider the magnetic phase transition under the influence of the dipolar interaction. We show that in the poly-dispersity and interacting sample, the temperature dependence of coercive field does not follow the classical expression, H_C/H_A = 0.48[1 − (T/T_B)^½]. We find that the transition temperature, which separates the anti-ferromagnetic and ferromagnetic states of strongly interacting sample, is not unique and it strongly depends on the variation of concentration. We also discuss about the concentration dependence of the coercivity at the different size distributions. At the finite temperature, the curve expresses a cusp which is due to the competition between the blocking and super-paramagnetic state at the low concentration. Therefore, we can see that the poly-dispersity also contributes to the complexity of magnetic phase of frozen ferrofluids.     

Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications

A comparative study of cathodoluminescence ultraviolet photon yields and decay times of large area GaN and zinc oxide (ZnO) layers grown for scintillator applications by metalorganic vapor phase epitaxy is presented. Silicon-doped GaN and non-intentionally-doped ZnO yield up to 1.4±0.2 photons/kVe⁻ and 1.3±0.2 photons/kVe^– at room-temperature, respectively. For GaN the decay times scatter between 0.4 and 0.9 ns, and for ZnO between 2.5 and 3.0 ns. The GaN and the ZnO absorption coefficients, α, internal efficiencies, η_i, and radiative constants, B, are determined. The characteristics of thin-film scintillators based on these materials are compared with commercially available granular scintillators.     

Ionic conduction, diffusion and glass transition in 0.2[XNa2O · (1−X)Rb2O] · 0.8B2O3

We have investigated the ionic transport in the 0.2[XNa₂O · (1−X)Rb₂O] · 0.8B₂O₃ mixed-alkali system with X=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 in the glassy and the undercooled-liquid state by means of impedance spectroscopy and tracer diffusion experiments. The calorimetric glass-transition temperature T_g obtained by differential scanning calorimetry shows a minimum with composition. The composition dependence of the electrical conductivity below T_g exhibits a minimum, as well. These deviations from an ‘ideal’ linear mixing rule are usually denoted as mixed-alkali effect. The dc conductivities times temperature σ_dc×T follow the Arrhenius law in the range below and above T_g, respectively. The glass transition appears as a kink in the Arrhenius presentation of σ_dc×T. Below the glass-transition temperature the onset frequency ν_on of the conductivity dispersion has an Arrhenius-like temperature dependence. According to ‘Summerfield scaling’ the activation enthalpies of σ_dc×T and ν_on are expected to be the same. This is indeed observed but only for the single-alkali compositions. The activation enthalpies of σ_dc×T as a function of composition show a classical mixed-alkali maximum, however the activation enthalpies of the onset frequencies as a function of composition exhibit a nearly constant behavior in contrast to the expectation from Summerfield scaling. The tracer diffusion measurements reveal a major difference in diffusion of ⁸⁶Rb and ²²Na in mixed-alkali glasses. A diffusivity crossover of tracer diffusion coefficients of ²²Na and ⁸⁶Rb occurs near X=0.2. By comparison of tracer and conductivity diffusivities the Haven ratio is deduced which shows a maximum near the conductivity minimum composition.     

Optical properties of Cr ion in lithium metasilicate Li2O · SiO2 transparent glass-ceramics

The optical properties of Cr³⁺ ions in lithium metasilicate (Li₂O · SiO₂) transparent glass-ceramics were investigated. The main crystalline phase precipitated was the lithium metasilicate (Li₂O · SiO₂) crystal. The percent crystallinity and crystalline size were ranging 65-75% and 20-35 nm, respectively. The color changes drastically to deep pink from emerald green upon crystallization. New and strong absorption bands appeared and the absorption intensity increases by about 10 times that in glass. These new absorption bands are found to be derived from Cr³⁺ ions in octahedral sites in the lithium metasilicate crystal lattice. Cr³⁺ ions substitute for three Li⁺ ions and occupy the distorted octahedral site between single [SiO₄]_n chains of lithium metasilicate crystal. The ligand field parameters can be estimated: 10Dq = 13 088 cm⁻¹, B = 453 cm⁻¹, Dq/B = 2.89 and C = 2036 cm⁻¹. The near-infrared luminescence centered at 1250 nm was not detected in the deep pink glass-ceramics unlike emerald green glass.     

Interatomic force constants in AIIBIVCV2 chalcopyrite compounds

Force constants of the A^II C^V and B^IV C^V bonds in the A^IIB^IVC^V₂ compounds with chalcopyrite structure are estimated from experimental lattice vibration data using a simplified version of the Keating model. It is shown that the force constants depend exponentially on the bond length. The parameters of this relation are practically the same as those found for the A^IV A^IV, A^III B^V and A^II B^VI bonds in the elemental semiconductors and binary compounds and for the B^III C^VI bond in the A^IB^IIIC^VI₂ semiconductors.     

Crystal growth of KInO2 from a hydroxide flux

Single crystals of KInO₂ were obtained from a reactive potassium hydroxide flux at 700 °C. KInO₂ crystallizes in the R-3m crystal system with a=3.2998(10) Å, c=18.322(10) Å and V=172.78(12) Å³. The crystal structure is isotypic with that of α-NaFeO₂ and consists of the (1 1 1) layers being occupied alternately by KO₆ and InO₆ octahedra. Three different AInO₂ structure types are discussed.     

Description of chemical ordering in amorphous alloys

Partial coordination numbers $\text{Z}{}_{\mathrm{ij}}{}^1$ for a chemically disordered binary amorphous alloy A_XAB_XB are obtained in terms of total coordination numbers Z_i and average coordination numbers 〈Z〉 $\text{Z}{}_{\mathrm{ij}}{}^1\text{=x}{}_{\mathrm{j}}\text{Z}{}_{\mathrm{i}}\text{Z}{}_{\mathrm{j}}\text{/〈Z〉}$. Departures from complete chemical disorder are characterized by a short-range order coefficient with η_AB^max=x_BZ_B/x_AZ_A for X_BZ_B<x_AZ_A and η_AB^max=x_AZ_A/x_BZ_B for x_BZ_B>x_AZ_A.For complete chemical disorder ν_AB⁰ = 0; for complete chemical order, i.e. with chemical preference for AB nearest neighbor pairs, ν_AB⁰ = 1. For departures from chemical disorder associated with clustering, i.e. chemical preference against AB nearest neighbor pairs, ν_AB⁰ < 0. Experimental results for several amorphous alloys are used to demonstrate the usefulness of these results. A more precise calculation of η_AB^max is necessary to compare the degree of ordering in the metal-metalloid and metal-metal alloys.     

Thermal properties and crystallization of iron phosphate glasses containing up to 25 wt% additions of Si-, Al-, Na- and U-oxides

The thermal properties (expansion, T_g and T_SOFT.) of glasses, having 56-66% P₂O₅, 14.8-34.2% Fe₂O₃ and 2-25 wt% additions of SiO₂, Al₂O₃, Na₂O and UO₂, were comparatively estimated from dilatometric measurements in similar conditions. The T_g reversibility was clearly verified by varying the heating rates between 1 and 5 °C min⁻¹. From linear equations fits of the various glass properties as functions of the six components it is suggested the iron, sodium and uranium oxides decrease the thermal expansion (for 50 < T ? 300 °C), T_g and T_SOFT. From DTA/XRD analysis of three glasses it was confirmed the crystallization tendency decreased with increasing the UO₂ level in the glasses. Leaching test data for two compositions containing Na₂O suggest addition of UO₂ increases the chemical durability of the related glass. The roles of UO₂, Na₂O and Fe-oxide species as structural components of the glass network are discussed.     

Thermodynamical miscibility in 0.8[xB2O3-(1 − x)P2O5]-0.2K2O glasses

The thermodynamical miscibility in 0.8[xB₂O₃-(1 − x)P₂O₅]-0.2K₂O glasses has been studied by measuring the glass transition temperature and the mixing enthalpy. Measurements have been performed by differential scanning calorimeter and hydrofluoric acid solution calorimetry at 298 K. The enthalpies of mixing are significantly negative over the whole range of composition. The results are discussed in terms of intermolecular associations.     

Production of CN(BΣ) state from dissociative excitation reaction of BrCN with microwave discharge flow of Ar

The mechanism of the dissociative excitation reaction of BrCN with the microwave discharge flow of Ar was investigated based on the CN(B²Σ⁺-X²Σ⁺) emission-spectroscopic and the electrostatic-probe measurements. By passing Ar and BrCN through P₂O₅, the contamination of H₂O molecules into the reaction region was reduced to ≈30%, being confirmed by monitoring the reduction of the OH(A²Σ⁺-X²Π) emission intensity. The variation of the CN(B²Σ⁺-X²Σ⁺) emission intensity on the pressure of Ar, P_Ar, of 0.1-0.3 Torr was compared with that of the density of electrons whose kinetic energy was lower than the ionization energy of BrCN, 11.9 eV. The dissociation of BrCN was found to proceed predominantly via the charge transfer from Ar⁺ followed by the BrCN⁺ − e⁻ recombination. When the contamination of H₂O molecules in the reaction region was not reduced, the dissociation via the energy transfer from metastable Ar atoms became significant. The present study shows that the contamination of H₂O molecules in the reaction system makes significant effect onto the gas-phase plasma process.     

In situ gravimetric monitoring of surface reactions between sapphire and NH3

Surface reactions between a (0 0 0 1) C-plane sapphire and NH₃, with He as an inert carrier gas, were investigated at high temperatures over 1200 °C using the in situ gravimetric monitoring method. Although the sapphire substrate was stable up to 1400 °C under a He atmosphere, decomposition started to occur at 1300 °C under a 0.1 atm NH₃+He and the decomposition rates were found to be lower than those in 0.1 atm H₂+He at each temperature. These results imply that sapphire can be decomposed by NH₃ and/or hydrogen generated by the decomposition of NH₃ over 1300 °C. The decomposition rate in NH₃+He was decreased with increase in NH₃ flow time, and the decomposition rate became constant after 60 min of NH₃ flow. Moreover, the activation energy for sapphire decomposition before 60 min of NH₃ flow was different from that after 60 min of NH₃ flow time, which indicates that the surface reaction between sapphire and NH₃ and/or hydrogen generated from NH₃ changes depending on the time of NH₃ flow. The dependence of the surface reactions and rate-limiting reactions between sapphire and NH₃ on the time of NH₃ flow is discussed.     

Low-temperature RPCVD of Si,SiGe alloy,and Si1−yCy films on Si substrates using trisilane (Silcore)

Si homo-epitaxial growth by low-temperature reduced pressure chemical vapor deposition (RPCVD) using trisilane (Si₃H₈) has been investigated. The CVD growth of Si films from trisilane and silane on Si substrates are compared at temperatures between 500 and 950 °C. It is demonstrated that trisilane efficiency increases versus silane's one as the surface temperature decreases. Si epilayers from trisilane, with low surface roughness, are achieved at 600 and 550 °C with a growth rate equal to 12.4 and 4.3 nm min⁻¹, respectively. It is also shown that Si_1−xGe_x layers can be deposited using trisilane chemistry.     

Theoretical studies of the spin Hamiltonian parameters and the local structures for the tetragonal Cu centers in the LKB glasses

The spin Hamiltonian parameters (g factors g_∥, g_⊥ and the hyperfine structure constants A_∥, A_⊥) for the Cu²⁺ centers in the lithium potassium borate (LKB) glasses xLi₂O·(30 − x)·K₂O·70B₂O₃ (0 ≤ x ≤ 25) were theoretically studied using the high-order perturbation formulas of these parameters for a 3d⁹ ion in a tetragonally elongated octahedron. The [CuO₆]¹⁰⁻ clusters in the LKB glasses are found to suffer the relative elongations of about 3% along the tetragonal axis due to the Jahn-Teller effect. The concentration dependences of the g factors are illustrated by the approximately linear decrease of the cubic field parameter Dq as well as the increases of the covalency factor N and the relative elongation ratio ρ due to the slight expansion of the cell volume or bond lengths with increasing the Li₂O concentration x. Meanwhile, the slow non-linear increases of the hyperfine structure constants are described as the rough exponential increase of the core polarization constant κ with x due to the increase of the tetragonality of the systems. The theoretical spin Hamiltonian parameters and their concentration dependences show good agreement with the experimental data. To evaluate validity and applicability of the present theoretical model and formulas, the EPR results of the Cu²⁺ centers in similar lithium sodium borate (LNB) xLi₂O·(30 − x)·Na₂O·70B₂O₃ (5 ≤ x ≤ 25 mol%) glasses are also analyzed and compared with those in the LKB systems using the uniform model and formulas.     

Growth of Nd-doped YVO4 single crystals along 〈1 0 0〉tetra by the anisotropic heating floating zone method

Nd-doped YVO₄ single crystals were grown along 〈1 0 0〉_tetra by the anisotropic heating floating zone (AHFZ) method. The relationship between the lamp power ratio (P_C/P_A) and the aspect ratio (c/a-axis diameter, D_C/D_A) of the grown crystals was investigated. D_C/D_A increased from 1.01 to 1.52 with increasing P_C/P_A from 0.7 to 1.5. The crystals grown by the AHFZ method developed a cylindrical shape with decreasing P_C/P_A, whereas those grown by a conventional FZ method developed an elliptical cylinder shape.     

Vacancy formation enthalpies in AIBIIIC chalcopyrite semiconductors

Formation enthalpies ΔH_v of single vacancies in all A^IB^IIIC₂^VI chalcopyrite structure compounds are estimated using the macroscopic cavity model. A comparison with atomic sublimation enthalpies ΔH_sub of the B^III and C^VI atoms derived from existing partial vapour pressure data shows that within the accuracy of this data and the theoretical calculations the relation ΔH_v ⪆ ΔH_sub is fulfilled as expected from general considerations.