Efficient frequency upconversion emission in Er-doped novel strontium lead bismuth glass

Er³⁺-doped strontium lead bismuth glass for developing upconversion lasers has been fabricated and characterized. The Judd-Ofelt intensity parameters Ω_t (t = 2, 4, 6), calculated based on the experimental absorption spectrum and Judd-Ofelt theory, were found to be Ω₂ = 2.95 × 10⁻²⁰, Ω₄ = 0.91 × 10⁻²⁰, and Ω₆ = 0.36 × 10⁻²⁰ cm². Under 975 nm excitation, intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions ²H_11/2 → ⁴I_15/2, ⁴S_3/2 → ⁴I_15/2, and ⁴F_9/2 → ⁴I_15/2, respectively, were observed. The upconversion mechanisms are discussed based on the energy matching and quadratic dependence on excitation power, and the dominant mechanisms are excited state absorption and energy transfer upconversion for the green and red emissions. The long-lived ⁴I_11/2 level is supposed to serve as the intermediate state responsible for the upconversion processes.     

Preparation,crystal structure,spectrographic characterization,thermal and third order nonlinear optical properties of benzyltriethylamine bis(2-thioxo-1,3-dithiole-4,5-dithiolato)nickel(III)

The preparation and crystal structure of a novel nonlinear optical organometallic crystal, benzyltriethylamine bis(2-thioxo-1,3-dithiole-4,5-dithiolato)nickel(III) (BTEANDT), are described. The crystal was characterized by elemental analyses, infrared and X-ray powder diffraction spectroscopy, thermal analysis and optical absorption. The third order nonlinear optical properties of crystal were investigated by using the Z-scan technique at 1064 nm with 20 ps. A self-focusing effect and a saturable absorption were observed. The nonlinear refraction coefficient (n₂) and the nonlinear absorption coefficient (β) have been found to be 7.311×10⁻¹⁸ m²/W and −6.064×10⁻¹¹ m/W when the on-axis irradiance at focus (I₀) is 3.025 GW/cm². The relationship between β and I₀ was studied, which has revealed that the former is proportional to the latter. The result has been explained with the theory of absorption cross-section.     

Chemically assisted vapour transport for bulk ZnO crystal growth

A chemically assisted vapour phase transport (CVT) method is proposed for the growth of bulk ZnO crystals. Thermodynamic computations have confirmed the possibility of using CO as a sublimation activator for enhancing the sublimation rate of the feed material in a large range of pressures (10⁻³ to 1 atm) and temperatures (800–1200 °C). Growth runs in a specific and patented design yielded single ZnO crystals up to 46 mm in diameter and 8 mm in thickness, with growth rates up to 400 μm/h. These values are compatible with an industrial production rate. N type ZnO crystals (μ=182 cm²/(V s) and n=7 10¹⁵ cm⁻³) obtained by this CVT method (Chemical Vapour Transport) present a high level of purity (10–30 times better than hydrothermal ZnO crystals), which may be an advantage for obtaining p-type doped layers ([Li] and [Al] <10⁺¹⁵ cm⁻³). Structural (HR-XRD), defect density (EPD), electrical (Hall measurements) and optical (photoluminescence) properties are presented.     

Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition

High-quality zinc oxide (ZnO) films were successfully grown on ZnO-buffered a-plane sapphire (Al₂O₃ (1 1 2¯ 0)) substrates by controlling temperature for lateral growth using chemical bath deposition (CBD) at a low temperature of 60 °C. X-ray diffraction analysis and transmission electron microscopy micrographs showed that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. Rocking curves (ω-scans) of the (0 0 0 2) reflections showed a narrow peak with full width at half maximum value of 0.50° for the ZnO film. A reciprocal space map indicated that the lattice parameters of the ZnO film (a=0.3250 nm and c=0.5207 nm) were very close to those of the wurtzite-type ZnO. The ZnO film on the ZnO-buffered Al₂O₃ (1 1 2¯ 0) substrate exhibited n-type conduction, with a carrier concentration of 1.9×10¹⁹ cm⁻³ and high carrier mobility of 22.6 cm² V⁻¹ s⁻¹.     

Generation and annealing of defects in virgin fused silica (type III) upon ArF laser irradiation: Transmission measurements and kinetic model

The transmission of ArF laser pulses in virgin fused silica (type III) samples changes during N = 10⁶ pulses at an incoming fluence H_in = 5 mJ cm⁻² pulse⁻¹. The related absorption is determined by the pulse energy absorption coefficient α(N, H_in) using a modified Beer’s law, yielding initial values α_ini around 0.005 cm⁻¹, a maximum α_max ? 0.02 cm⁻¹ at N = 10³-10⁴ and stationary values 0.0045 cm⁻¹ ? α_end ? 0.0094 cm⁻¹ after N ≈ 6 × 10⁵ pulses. The development α(N, H_in = const.) is simulated by a rate equation model assuming a pulse number dependent E′ center density E′(N). E′(N) is determined by a dynamic equilibrium between E′ center generation and annealing. Generation occurs photolytically from the precursors ODC II and unstable SiH structures upon single photon absorption and from strained SiO bonds via two-photon excitation. Annealing in the dark periods between the laser pulses is dominated by the reaction of E′ with H₂ present in the SiO₂ network. The development α(N, H_in = const.) is observed for the very first sample irradiation only (virgin state). The values α_end are not accessible by simple spectrophotometer measurements.     

Luminescence of borogermanate glasses activated by Er and Yb ions

Glasses of the 25Ln₂O₃-25B₂O₃-50GeO₂ composition (mol%) where Ln = (1 − x − y) La, xEr, yYb, with an addition of Al₂O₃ have been obtained and their luminescent characteristics examined. Probabilities of spontaneous emission, peak sections of the induced radiation and quantum yields of luminescence corresponding to the ²F_5/2 → ²F_7/2 transition of Yb³⁺ ions and the ⁴I_13/2 → ⁴I_15/2 transition of Er³⁺ ions have been defined. Quantum yield of Yb³⁺ luminescence for glasses with low Yb₂O₃ concentration reaches values closed to 100%. The luminescence spectrum of Er³⁺ ions exhibits a broad peak at about 1530 nm with effective width more than 80 nm when excited by irradiation at λ = 977 nm. Spontaneous emission probability and peak stimulated radiation section for Er³⁺ luminescence band ⁴I_13/2 → ⁴I_15/2 were determined to be equal to 175 s⁻¹ and 4.9 × 10⁻²¹ cm² respectively. Effective quenching of both rare-earth activators by oscillations with ν ≈ 2630 and 2270 cm⁻¹ was found. These oscillators, most likely, represent OH-groups connected by a hydrogen bond with non-bridging oxygen atoms in the borogermanate matrix.     

Optical properties of and concentration quenching in Bi2O3-B2O3-Ga2O3 glasses

Er₂O₃-doped Bi₂O₃-B₂O₃-Ga₂O₃ glasses were prepared by the conventional melt-quenching method, and the Er³⁺:⁴I_13/2 → ⁴I_15/2 fluorescence properties are studied for different Er³⁺ concentrations. when the Er₂O₃ concentration increases from 0.03 to 3.0 mol%, the measured lifetime of Er³⁺:⁴I_13/2 level decrease from 2.24 to 0.9 m s, and from 0.25 to 0.20 m s for the Er³⁺:⁴I_11/2 level. The fast energy migration among Er³⁺ ions cause the reduction of lifetime of the ⁴I_13/2 level, whereas the change in the ⁴I_11/2 level is mainly due to a cooperative upconversion process (⁴I_11/2, ⁴I_11/2) → (⁴F_7/2, ⁴I_15/2). Based on the dipole-dipole interaction theory, the interaction parameter, C_Er,Er, for the migration rate of Er³⁺:⁴I_13/2 ↔ ⁴I_13/2 was calculated to be 32 × 10⁻⁴⁰ cm⁶ s⁻¹.     

Optical properties of Cr ion in lithium metasilicate Li2O · SiO2 transparent glass-ceramics

The optical properties of Cr³⁺ ions in lithium metasilicate (Li₂O · SiO₂) transparent glass-ceramics were investigated. The main crystalline phase precipitated was the lithium metasilicate (Li₂O · SiO₂) crystal. The percent crystallinity and crystalline size were ranging 65-75% and 20-35 nm, respectively. The color changes drastically to deep pink from emerald green upon crystallization. New and strong absorption bands appeared and the absorption intensity increases by about 10 times that in glass. These new absorption bands are found to be derived from Cr³⁺ ions in octahedral sites in the lithium metasilicate crystal lattice. Cr³⁺ ions substitute for three Li⁺ ions and occupy the distorted octahedral site between single [SiO₄]_n chains of lithium metasilicate crystal. The ligand field parameters can be estimated: 10Dq = 13 088 cm⁻¹, B = 453 cm⁻¹, Dq/B = 2.89 and C = 2036 cm⁻¹. The near-infrared luminescence centered at 1250 nm was not detected in the deep pink glass-ceramics unlike emerald green glass.     

Selective crystallization of amorphous silicon thin film by a CW green laser

A simple and effective method for selective CW laser crystallization of a-Si (CLC) without pre-patterning of a-Si has been reported. By using a metallic shadow mask instead of a photolithographic process, we can reduce the process steps and time compared with a conventional CLC process. It shows very high performance – mobility of 173 cm²/s, I_off of ∼10⁻¹³ A @ V_d = −5 V, I_on/I_off of >10⁸ – as a p-channel poly-Si TFT even without any pre-/post-treatment to improve TFT characteristics such as plasma hydrogenation.     

Spectroscopic properties of Er-doped Na2O-Sb2O3-B2O3-SiO2 glasses

Spectroscopic properties of Er³⁺-doped Na₂O-Sb₂O₃-B₂O₃-SiO₂ glasses have been investigated for developing 1.5-μm broadband fiber amplifiers. An intense 1.5-μm near infrared emission with a broad full width at half maximum (FWHM) of 88 nm has been obtained for Er³⁺-doped 5Na₂O-20Sb₂O₃-35B₂O₃-40SiO₂ glass upon excitation with a 980 nm laser diode. The obtained emission cross-section of the ⁴I_13/2 → ⁴I_15/2 transition and the lifetime of the ⁴I_13/2 level of Er³⁺ ions are 6.8 × 10⁻²¹ cm² and 0.36 ms, respectively. It is noted that the product of the emission cross-section and the FWHM of the glass, σ_e × FWHM, is as great as 598.4 × 10⁻²¹ cm² nm, which is comparable or higher than that of Er³⁺-doped bismuth-based and tellurite-based glasses. These special optical properties encourage in identifying them as important materials for potential applications in high performance optics and optical communication networks.     

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

This work assesses the relative effectiveness of four techniques to reduce the defect density in heteroepitaxial nonpolar a-plane GaN films grown on r-plane sapphire by metalorganic vapour phase epitaxy (MOVPE). The defect reduction techniques studied were: 3D–2D growth, SiN_x interlayers, ScN interlayers and epitaxial lateral overgrowth (ELOG). Plan-view transmission electron microscopy (TEM) showed that the GaN layer grown in a 2D fashion had a dislocation and basal-plane stacking fault (BSF) density of (1.9±0.2)×10¹¹ cm⁻² and (1.1±0.9)×10⁶ cm⁻¹, respectively. The dislocation and BSF densities were reduced by all methods compared to this 2D-grown layer (used as a seed layer for the interlayer and ELOG methods). The greatest reduction was achieved in the (0 0 0 1) wing of the ELOG sample, where the dislocation density was <1×10⁶ cm⁻² and BSF density was (2.0±0.7)×10⁴ cm⁻¹. Of the in-situ techniques, SiN_x interlayers were most effective: the interlayer with the highest surface coverage that was studied reduced the BSF density to (4.0±0.2)×10⁵ cm⁻¹ and the dislocation density was lowered by over two orders of magnitude to (3.5±0.2)×10⁸ cm⁻².     

FTIR, XRD and ac impedance spectroscopic study on PVA based polymer electrolyte doped with NH4X (X = Cl, Br, I)

The present study focuses on characterizing PVA: NH₄X (X = Cl, Br, I) proton conducting polymer electrolyte prepared by solution casting technique using XRD, FTIR and ac impedance spectroscopic studies. The XRD patterns of all the prepared polymer electrolytes reveal the amorphous nature of the films. The FTIR spectroscopic study indicates the detailed interaction of PVA with proton. From ac impedance spectroscopic studies, it has been found that PVA doped with NH₄I have high ionic conductivity (2.5 × 10⁻³S cm⁻¹) than PVA doped with NH₄Br (5.7 × 10⁻⁴S cm⁻¹) and NH₄Cl (1.0 × 10⁻⁵S cm⁻¹) polymer electrolytes. This is due to the large anionic size and low lattice energy of NH₄I (in comparison with NH₄Br and NH₄Cl).The temperature dependence of ionic conductivity for all the PVA: NH₄X (X = Cl, Br, I) polymer films obey Arrhenius equation. Ionic transference number measured has been found to be in the range of 0.93-0.96 for all the polymer electrolytes proving that the total conductivity is mainly due to ions.     

Erbium doped fluoride glass-ceramics waveguides fabricated by PVD

Transparent amorphous and glass-ceramics waveguides in the system ZrF₄-LaF₃-ErF₃-AlF₃ (ZELA) have been fabricated by physical vapor deposition (PVD). The ceramming process was studied by means of X-ray diffraction and transmission electron microscopy for different deposition temperatures. With increasing deposition temperature, formation of La_xEr_1−xF₃ nanocrystals with x ∼ 0.3 was observed. The decay curves of the ⁴I_13/2 level in the glass-ceramics with 14.5 mol% Er³⁺ gave evidence of the presence of erbium both in the amorphous matrix (τ = 8.6 ms) and in the crystal phase (τ = 2.2 ms). The decrease of lifetime was due to clustering of erbium incorporated in LaF₃ crystal lattice. No significant increase of attenuation loss was detected after waveguide cerammization (1.3 dB/cm at 1304 nm).     

Properties of Ge-doped,high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

We investigated the properties of Ge-doped, high-quality bulk GaN crystals with Ge concentrations up to 2.4×10¹⁹ cm⁻³. The Ge-doped crystals were fabricated by hydride vapor phase epitaxy with GeCl₄ as the dopant source. Cathodoluminescence imaging revealed no increase in the dislocation density at even the highest Ge concentration, with values as low as 3.4×10⁶ cm⁻². The carrier concentration, as determined by Hall measurement, was almost identical to the combined concentration of Ge and unintentionally incorporated Si. The electron mobilities were 260 and 146 cm² V⁻¹ s⁻¹ for n=3.3×10¹⁸ and 3.35×10¹⁹ cm⁻³, respectively; these values are markedly larger than those reported in the past for Ge-doped GaN thin films. The optical absorption coefficient was quite small below the band gap energy; it slightly increased with increase in Ge concentration. Thermal conductivity, estimated by the laser-flash method, was virtually independent of Ge concentration, maintaining an excellent value around 2.0 W cm⁻¹ K⁻¹. Thermal expansion coefficients along the a- and m-axes were approximately constant at 5.0×10⁻⁶ K⁻¹ in the measured doping concentration range.     

Spectroscopic properties of Er-doped xGeO2-(80 − x)TeO2-10ZnO-10BaO glasses

Erbium-doped glasses with composition xGeO₂-(80 − x)TeO₂-10ZnO-10BaO were prepared by melt-quenching technique. The phonon sideband spectra and the optical absorption band edges for the host matrix were confirmed by means of the spectral measurements. Standard Judd-Ofelt calculations have been completed to these glasses. The dependence of up-conversion and infrared emission under 980 nm excitation on the glass composition was studied. The quantum efficiencies for the ⁴I_13/2 → ⁴I_15/2 transition of trivalent erbium in the glasses were estimated.     

Underlying reverse current mechanisms in a-Si:H p-i-n solar cell and compact SPICE modeling

The defect states in bulk of i-layer and at p⁺/i interface have been studied by using dark reverse current-voltage (J-V) measurements. The dark reverse current as a function of voltage has been analyzed on the basis of thermal generation of the carriers from mid-gap states in i-layer. Based on its behavior the thermal generation mechanism has been divided into two types. Thermal generation at lower bias (<5 V) shows V^1/2 behavior, whereas at higher bias follows an exponential dependence of voltage (>5 V). This was explained using a thermal generation zone at lower bias, which is a source of reverse currents, and its evolution towards p⁺/i interface with increasing voltage. The analytical result has shown that at lower reverse bias (V < 5 V) the defect states in the bulk of i-layer and at higher bias (V ∼ 25 V) the defect states at p⁺/i interface are contributing to the reverse currents. Reverse bias annealing (RBA) treatment which has been performed on these cells shows that a reduction of defect states more in the i-region near to the p⁺-layer and at p⁺/i interface as compared to the deep regions in bulk of i-layer. The calculated defect state density (DOS) is varying from its intrinsic value of 2.4 × 10¹⁷ cm⁻³ in the bulk of the i-layer up to 2.1 × 10¹⁹ cm⁻³ near and at p⁺/i interface. These values decrease to 7.1 × 10¹⁶ cm⁻³ and 2.7 × 10¹⁷ cm⁻³, respectively, in the samples annealed under reverse bias at 2 V. The bias dependent leakage current behavior has been modeled and implemented in simulation program with integrated circuit emphasis (SPICE) using simple circuit elements based on voltage controlled current sources (VCCS). Simulated and measured reverse leakage current characteristics are in reasonable agreement.     

Thermodynamics of the Cu/Cu-redox equilibrium in soda-silicate and soda-lime-silicate melts

The thermodynamics of the redox equilibrium of Cu⁺/Cu²⁺ were determined by square-wave voltammetry in glass melts with the base mol% compositions x Na₂O · (100 − x) SiO₂ (x = 15, 20, 26 and 33) and (26 − x) Na₂O · x CaO · 74 SiO₂ (x = 0, 5, 10 and 15) doped with 1 mol% CuO in the temperature range from 850 to 1150 °C. All recorded voltammograms showed two maxima attributed to the reductions of Cu²⁺ to Cu⁺ and Cu⁺ to metallic copper. Both peaks are shifted to smaller potentials with decreasing temperature. With increasing melt basicity, the [Cu⁺]/[Cu²⁺]-ratio first increases, and remains constant for optical basicities >0.56. The effect of composition on the redox equilibrium is explained by the incorporation of both Cu⁺ and Cu²⁺ in octahedral coordination into the melt structure.     

Stark splitting of the ground state of Er in fluorozirconate glass at low temperature

Optical properties of Er³⁺-doped ZBLAN glass matrix have been studied by luminescence spectroscopy under 488 nm excitation. The spectrum of the ⁴S_3/2⁴I_15/2 transition, carried out at temperature T = 2 K, shows a new line in the lowest energy region. This new line, centered at 17 996 cm⁻¹, was attributed to the lower transition between the Stark components of the ⁴S_3/2⁴I_15/2 transition. Measurements from T = 2 K to room temperature show the disappearance of this new line. From the results we estimate the splitting of 415 cm⁻¹ for the ground state and 100 cm⁻¹ for the ⁴S_3/2 excited multiplet. The experimental result allows us to assign the positions of the eight Stark components of the ground state multiplet of the Er³⁺ in the ZBLAN glass matrix.     

Degradation of nickel (86 MeV) ion irradiated polystyrene

Samples of polystyrene films were irradiated under vacuum at room temperature with ⁵⁸Ni⁷⁺ (86 MeV) ion with fluences ranging from 1 × 10¹¹ to 1 × 10¹³ ions cm⁻². Ion induced structural modifications were studied by means of atomic force microscopy atomic force microscopy (AFM), X-ray diffraction (XRD), UV-visible absorption spectroscopy (UV-Vis) and Fourier transform infrared spectroscopy (FTIR) techniques. Atomic force microscopy shows that the root mean square (RMS) roughness of the irradiated polystyrene surface increases with the increment of ion fluence. XRD analysis reveals that in addition to the increase of amorphization of polymer with the increase of ion fluence there is also an increase of ordering (to a small extent) in some of the micro-domains. These results have further been supported by the study of optical and chemical analysis. The analysis of present study shows that the increase of full width at half maximum (FWHM) of first peak of XRD spectra, decrease of optical band gap and the formation of new alkyne group may be attributed to the increase of amorphization of polystyrene. Similarly, sharpening of second X-ray diffraction peak, decrease of Urbach’s energy and increase in the absorbance ratio of I₁₂₂₂/I₁₁₈₃ may be owed to the increase of ordering in some domains.     

Ge and Ga K-edge EXAFS analyses on the structure of Ge-Ga-S-CsBr glasses

The local structure of Ge and Ga ions in (1 − x)(Ge_0.25Ga_0.10S_0.65)-xCsBr glasses (x = 0.00, 0.05, 0.10 and 0.12) were investigated using extended X-ray absorption fine structure (EXAFS) spectroscopy. CsBr formed [GaS_3/2Br]⁻ structural units in glass while Ge ions remained in GeS_4/2 tetrahedra, unaffected by CsBr addition. Rare-earth ions can be surrounded by Br ions only when CsBr/Ga ratio in glass became larger than unity.