Effect of lead additive on photoconductive properties of Se–Te chalcogenide films

Steady state and transient characteristics of photoconductivity have been studied in amorphous thin films of Se₈₅Te_15−xPb_x (x = 0, 2, 4 and 6). The studies of temperature dependence of photoconductivity show that photoconduction is a thermally activated process. The value of activation energy of photoconduction is, however, smaller as compared to activation energy in dark. The results of intensity dependence of steady state photoconductivity indicate that bimolecular recombination is predominant in these materials. The Se₈₅Te_15−xPb_x is found highly composition dependent as lead impurity drastically changes the conduction parameters. The incorporation of Pb impurity is found to affect the transient photoconductivity properties drastically. A spike is observed in the rise curve of photocurrent in undoped a-Se₈₅Te₁₅, which disappears in Pb doped samples. The lead incorporation is found to delay the onset time of recombination in the rise and decay of photocurrent which is attributed to the trapping of charge carriers in deep localized states produced by lead impurity. The photocurrent rise and decay is explained by the trap-controlled recombination model proposed by Iovu et al. and the dispersion parameter α of localized state energy distribution is determined from the experimental results.     

Effect of Cu additive on the electrical properties of Ge–Se alloy

Electrical measurements have been carried out on a-(Ge₂₀Se₈₀)_100−xCu_x (x = 0.0, 0.5, 1.0, 1.5 and 2.0 at.%) thin films. The dark conductivity (σ_d) and photoconductivity (σ_ph) measurements are done in the temperature range 252–349 K. The values of σ_d, σ_ph increase and dark activation energy (ΔE_d), photo activation energy (ΔE_ph) decrease as the concentration of Cu additive increases (up to 1.0 at.%). Photosensitivity (σ_ph/σ_d) increases and decay time constant (τ_d) decreases as the concentration of Cu increases (up to 1.0 at.%). The charge carrier concentration (n_σ) increases with Cu incorporation (up to 1.0 at.%). A reverse in the trend takes place in all these parameters as the Cu concentration is further increased (>1.0 at.%). These results are explained on the basis of change in the density of defect states present in the mobility gap of Ge–Se–Cu alloy.     

Photoelectronic and electrical properties of CuIn5S8 single crystals

To identify the impurity levels in CuIn₅S₈ single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50–460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent‐illumination intensity dependence (F) follows the law I_phαF^γ, with γ being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, τ_n, is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, τ_n decrease with decreasing illumination intensity. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical properties of a-Se85−xTe15Snx thin films

Se–Te alloys are an important system of chalcogenide glasses from application point of view. The incorporation of Sn additive alters the electrical properties of these alloys. The conductivity measurements have been done on the thin films of a-Se_85−xTe₁₅Sn_x (x = 0, 2, 4, 6 and 10 at.%) deposited using vacuum evaporation technique. Both dark (σ_d) and photoconductivity (σ_ph) show a maximum for x = 6 at.% of Sn, which, decreases on further Sn addition to the binary Se–Te alloy. The dark activation energy (ΔE_d) shows a minimum for x = 2 at.% of Sn, but increases on further Sn addition. There is a sharp decrease in photosensitivity (σ_ph/σ_d) on Sn addition to Se₈₅Te₁₅ alloy. The charge carrier concentration (n_σ) calculated with the help of dc conductivity measurements also show a maximum at x = 6 at.% of Sn. The results are explained on the basis of increase in the density of localized states present in the mobility gap on Sn incorporation.     

Photoelectrical properties of (Sb15As30Se55)100−xTex (0 ⩽ x ⩽ 12.5 at.%) thin films

This paper reports photoelectrical properties of (As₃₀Sb₁₅Se₅₅)_100?xTe_x amorphous chalcogenide films (0 ? x ? 12.5 at.%) through measurements of ‘steady state’ and ‘transient’ photocurrents. The composition dependence of the steady state photocurrent at room temperature shows that the photoconductivity increases while the photosensitivity decreases with increasing Te content. A study of photoconductivity of (As₃₀Sb₁₅Se₅₅)_100?xTe_x at different levels of light intensity reveals that, the photoconductivity increases exponentially with increase in light intensity. The Photocurrent (I_ph) when plotted against light intensity (G) follows a power law (I_ph = G^γ) the exponent γ for (As₃₀Sb₁₅Se₅₅)_100?xTe_x films has been found nearly 0.5 suggesting bimolecular recombination. The transient photoconductivity shows that the lifetime of the carrier decreases with increasing the light intensity. This decrease suggests that the photoconductivity mechanism in our samples was controlled by the transition trapping processes. The increase of Te content results in a monotonic decrease in the band gap and the free carrier life time of (As₃₀Sb₁₅Se₅₅)_100?xTe_x thin films. These results were interpreted on the basis of the chemical-bond approach.     

Study of anomalous behavior of steady state photoconductivity in highly crystallized undoped microcrystalline Si films

The photoconductivity (σ_ph) of highly crystallized dense undoped hydrogenated microcrystalline silicon (μc-Si:H) films was measured as a function of light illumination over a wide temperature range (∼15–325 K). A thermal quenching behavior in σ_ph was observed at ∼240 K. The photoconductivity exponent (γ) was found to be sublinear with γ as low as 0.13. A density of states (DOS) profile having a steep conduction band tail, and valence band tail with two distinct distributions was found to be necessary to understand the electronic transport behavior in the inherently heterogeneous μc-Si:H films.     

Improvement of the electrical properties of Se3Te1 thin films by In additions

The electronic and photoconductivity properties of semiconducting chalcogenide glasses have been largely stimulated by attractive micro-electronic device applications. The present paper aims to study the effect of In additions on the steady state and transient photoconductivity of amorphous In_x(Se₃Te₁)_100 ? x (0 ≤ x ≤ 10 at.%) chalcogenide films. It was found that, the Indium additions lead to the decrease of both the activation energies (ΔE_dc in the dark and ΔE_ph for the photoelectrical conduction) and the optical band gap E_g that improved the electrical properties of these films. The photoconductivity increases while photosensitivity changes from 8.73 to 7.18 with the increase of In content. The exponential dependence of photocurrent on the light intensity suggests that, the recombination mechanism in these films is due to bimolecular recombination. The transient photoconductivity measurements stated that, the carrier lifetime decreased by the increase of the light intensity and In content. The obtained results were discussed in terms of the width of localized states (Mott and Davis model) and the chemical-bond approach.     

The interpretation of the electric and optical properties of a-Si:H films produced by rf glow discharge through dark conductivity,photoconductivity and pulse controlled capacitance-voltage measurements

This paper deals with the interpretation of transport properties of amorphous silicon hydrogenated films (a-Si:H) through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements. a-Si:H films were produced by rf glow discharge coupled either inductively or capacitively to a 3% SiH₄/Ar mixture at different crossed electromagnetic static fields. The data concerned with the dark activation energy, photoactivation energy, variation of the density of localized states and photosensitivity, (σ_ph/σ_d)_25°C, of a-Si:H films can account for their optoelectronic properties which are strongly dependent on the deposition parameters. We also observed that crossed electromagnetic static fields applied during film formation influences hydrogen incorporation in a different manner than previously proposed.     

Electrical conductivity and photoconductivity of As2S3PbS glasses

Measurements of dc electrical conductivity and photoconductivity of various glassy compositions (x = 0.1?0.625) in (As₂S₃)_1?x(PbS)_x have been made. Experimental results of the temperature dependence of dc conductivity from room temperature to 200°C (which includes the glass transition temperature) are reported. All the compositions exhibit intrinsic conduction in the measured temperature range. Thermal activation energy, glass transition temperature and σ₀ for the compositions studied, were determined from the experimental data. The low value of $\text{σ}{}_0\text{(10?10}{}^{\mathrm{?2}}\text{Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$) in these semiconducting glasses is attributed to the greater participation of localized states in the conduction process.In the measurements of photoconductivity, the variation of photocurrent with temperature, photon energy, light intensity and electric field is observed. The recombination model has been involved to explain the results of photoconductivity. Both electrical and photoconductivity data support the presence of higher density of localized states in the x = 0.1 composition than in others.     

Transport property and structural characterization studies on (1 − x)[0.75AgI:0.25AgCl]:xTiO2 conducting composite electrolyte system

Transport property and structural investigation have been carried out on newly synthesized Ag⁺ ion conducting composite electrolyte system. The composite electrolyte system (1 − x)[0.75AgI:0.25AgCl]:xTiO₂, where 0 ? x ? 0.5 (in molar weight fraction) has been synthesized by melt quenching and annealing methods. The chemical compound TiO₂ (second phase dispersoid) dispersed in different compositions in a quenched (0.75AgI:0.25AgCl) mixed system/solid solution; this solid solution was used as a first phase host salt in place of AgI. The different preparation routes were adopted for the composite electrolyte system. Composition x = 0.1 exhibited highest conductivity at room temperature. The composite system 0.9[0.75AgI:0.25AgCl]:0.1TiO₂ was synthesized at different soaking times by melt quenching method. The system exhibited optimum conductivity at 20 min soaking time (σ_rt ≈ 1.4 × 10⁻³ S/cm). The ac conductivity has been measured from Z′-Z″ (Cole-Cole) complex impedance plots using impedance spectroscopic (IS) technique. The electrical conductivity as a function of temperature and frequency has been studied, and activation energy E_a, was calculated from Arrhenius plots for all compositions (0 ? x ? 0.5). The dc conductivity value has been evaluated from Log σ vs. log f plots. Structural characterization studies were carried out by X-ray diffraction (XRD) and differential thermal analysis (DSC) techniques.     

Crystal growth and luminescent properties of Pr-doped K(Y,Lu)3F10 single crystal for scintillator application

Pr1%:K(Y_1−xLu_x)₃F₁₀ (x=0, 0.2, 0.4) single crystals were grown by the μ-PD method. All the grown crystals were greenish and perfectly transparent without any inclusions or cracks. Radioluminescence spectra and decay kinetics of the Pr1%:K(Y,Lu)₃F₁₀ crystals were measured. Emission from the Pr³⁺ 5d–4f transition, peaking around 260 nm and of the decay time of around 22 ns were observed. The 5d–4f emission intensities of the Pr1%:K(Y,Lu)₃F₁₀ crystals were higher than that of the standard BGO scintillator.     

Signatures of an extended rigidity percolation in the photo-degradation behavior and the composition dependence of photo-response of Ge-Te-In glasses

Time dependent photocurrent measurements have been undertaken on bulk Ge₁₅Te_85−xIn_x (1 ? x ? 11) series of glasses. It is found that samples with x < 3 do not exhibit any photo-degradation whereas a decrease in photo-conductivity under illumination is observed in samples with x ? 3. Further, the photosensitivity of Ge₁₅Te_85−xIn_x glasses is found to reveal specific signatures at compositions x = 3 and 7. The observed composition dependent photo-degradation behavior and photo-response of these glasses have been understood on the basis of an extended rigidity percolation and its influence on network related properties.     

Erbium doped fluoride glass-ceramics waveguides fabricated by PVD

Transparent amorphous and glass-ceramics waveguides in the system ZrF₄-LaF₃-ErF₃-AlF₃ (ZELA) have been fabricated by physical vapor deposition (PVD). The ceramming process was studied by means of X-ray diffraction and transmission electron microscopy for different deposition temperatures. With increasing deposition temperature, formation of La_xEr_1−xF₃ nanocrystals with x ∼ 0.3 was observed. The decay curves of the ⁴I_13/2 level in the glass-ceramics with 14.5 mol% Er³⁺ gave evidence of the presence of erbium both in the amorphous matrix (τ = 8.6 ms) and in the crystal phase (τ = 2.2 ms). The decrease of lifetime was due to clustering of erbium incorporated in LaF₃ crystal lattice. No significant increase of attenuation loss was detected after waveguide cerammization (1.3 dB/cm at 1304 nm).     

Population dynamics of the F4 and H4 levels in highly-doped Tm:ZB(L)AN glasses

Population dynamics of the ³F₄ and ³H₄ levels in Tm³⁺ doped ZB(L)AN glasses was studied for Tm³⁺ concentrations from 0.5 to 12 mol%. Fluorescence waveforms from these levels were measured at 1.8 μm (³F₄) and 800 nm (³H₄) with both direct and indirect pumping. Decay from the ³F₄ level was found to be exponential with non-radiative decay rates proportional to the square of the Tm concentration. This indicated a process of energy migration by diffusion within the excited Tm³⁺ ions followed by quenching at sites to which the ions could migrate. The decay of the directly pumped ³H₄ level exhibited both exponential and non-exponential behavior depending on the concentration. For the lowest concentration (0.5 mol%) the decay was exponential, but at concentrations of 1, 2, 4 and 6 mol% the decay waveforms were distinctly non-exponential. The non-exponential waveforms could be fitted by the Yokota-Tanimoto model for diffusion of excited donors and dipole-dipole interactions with acceptors. This model produced values for C_DD and C_DA, the donor-donor and donor-acceptor energy transfer parameters, respectively. At the higher concentrations (8, 10, 12 mol%) the waveforms were exponential with decay rates from which the cross-relaxation parameter for the process ³H₄, ³H₆ → ³F₄, ³F₄ was obtained. When the ³F₄ level is pumped at 1660 nm, the decay of the ³H₄ level confirmed the influence of the up-conversion energy transfer process ³F₄, ³F₄ → ³H₄, ³H₆.     

Crystallization kinetics of Fe73.5−xMnxCu1Nb3Si13.5B9 (x = 0, 1, 3, 5, 7) amorphous alloys

In this study, we have investigated the effect of substituting Mn for Fe on the crystallization kinetics of amorphous Fe_73.5−xMn_xCu₁Nb₃Si_13.5B₉ (x = 1, 3, 5, 7) alloys. The samples were annealed at 550 °C and 600 °C for 1 h under an argon atmosphere. The X-ray diffraction analyses showed only a crystalline peak belonging to the α-Fe(Si) phase, with the grain size ranging from 12.2 nm for x = 0 to 16.7 nm for x = 7. The activation energies of the alloys were calculated using Kissinger, Ozawa and Augis-Bennett models based on differential thermal analysis data. The Avrami exponent n was calculated from the Johnson-Mehl-Avrami equation. The activation energy increased up to x = 3, then decreased with increasing Mn content. The values of the Avrami exponent showed that the crystallization is typical diffusion-controlled three-dimensional growth at a constant nucleation rate.     

Insulator-like electrical transport in structurally ordered Al65Cu20+xRu15−x (x = 1.5, 1.0, 0.5, 0.0 and −0.5) icosahedral quasicrystals

Low-temperature resistivities, in zero-field and 8 T field, and magnetoresistance have been measured down to 1.4-300 K for stable icosahedral quasicrystals Al₆₅Cu_20+xRu_15−x (x = 1.5, 1.0, 0.5, 0.0 and −0.5). The analysis of the magnetoresistance data shows an overwhelming presence of anti weak-localization effect (τ_so ∼ 10⁻¹² s). But the sample with x = −0.5 shows anomalous magnetoresistance and the anti weak-localization effect breaks down (τ_so to be 10⁻¹⁵ s). The in-field σ-T between 5 K and 20 K, for x = 1.0, 0.5, 0.0 and −0.5 samples, and between 1.4 K and 40 K for x = 1.5 sample, follow a power-law behavior with an exponent of 0.5 and above ∼30 K the exponent ranges from 1.17 to 1.58. The observed power-laws basically characterize the presence of critical regime of the metal-insulator (MI) transition, dominated by electron-electron and electron-phonon inelastic scattering events respectively. In samples with x = 1.0, 0.5, 0.0 and −0.5 the in field σ-T has been found to follow ln σ-vs-T^1/4 below 5 K, which indicates the presence of variable range hopping. The observed transport features indicate the occurrence of proximity of metal-insulator transition in these Al-Cu-Ru quasicrystal samples.     

Crystal/glass phase change in K1−xRbxSb5S8 (x = 0.25, 0.50, 0.75) studied through thermal analysis techniques

K_1−xRb_xSb₅S₈ (x = 0.25, 0.5, 0.75) is a well-defined single-phase system that undergoes a reversible phase-change. We determined the activation energy of glass transition and crystallization, respectively, for the three compositions using the Kissinger and Ozawa-Flynn-Wall equations. The results have shown that for K_0.25Rb_0.75Sb₅S₈ the crystallization mechanism could be interpreted in terms of a single-step reaction. For the other two compositions the glass-to-crystal transformation is a process of increasing mechanistic complexity with time and it involves simultaneously several different nucleation and growth events. The slope of the lines in the Avrami plots was observed to be independent of heating rate for K_0.25Rb_0.75Sb₅S₈ and the mean value of the activation energy was found to be 262 ± 6 kJ/mol. For the other two compositions, the slope varies with the heating rate. In the K_0.25Rb_0.75Sb₅S₈ glasses, bulk nucleation with three-dimensional crystal growth appears to dominate the phase-change process.     

The influences of cations on the properties of Y-Mg-Si-Al-O-N glasses

Two series (A and B series) of oxynitride glasses were prepared by melting batches at 1580 °C for 3 h under local CO reducing atmosphere in a Si-Mo-heated resistance furnace. Nominal compositions of A and B series glasses in equivalent percent (eq.%) are (28−x)Y:xMg:48Si:24Al:83O:17N and (28−x)Y:xMg:56Si:16Al:83O:17N (x = 0, 7, 14, 21), respectively. The influences of Mg/Y and Al/Si ratios on the properties such as glass transition temperature (T_g), crystallization temperature (T_C), knoop hardness (H), three-point bending strength (σ) and chemical durability in 20%HF were investigated. At the same time, the relationship between these properties and the structures of the glasses were discussed. At constant ratio Si-Al-O-N, T_g decreases nonlinearly but glass leaching ratio increases linearly with increasing Mg/Y ratio. However, H and σ increase first and then decrease as the Mg/Y ratio increases. When the Y/Mg/O/N ratio is constant, T_g decreases slightly but H and σ increase slightly as the Al/Si ratio increases.     

Energy transfer up-conversion in Tm-doped silica fiber

A study of the mechanisms responsible for the infra-red to near infra-red up-conversion in Tm³⁺-doped silica fibers is presented. Up-conversion luminescence was observed from the ³H₄ level of Tm³⁺ under 1586 nm pumping into the ³F₄ level. The quadratic dependence of the up-conversion luminescence at 800 nm on the 1800 nm luminescence from the ³F₄ level confirms that the ³H₄ level is populated by a two photon process. Two possible processes are proposed as mechanisms responsible for the up-conversion: excited state absorption and energy transfer up-conversion. The decay characteristics of the luminescence from the ³H₄ level were studied under direct and indirect pumping at 786 and 1586 nm, respectively. By comparing the decay waveforms to the solution of a simple set of rate equations, the energy transfer up-conversion process (³F₄, ³F₄ → ³H₄, ³H₆) was established at Tm₂O₃ concentrations greater than 200 ppm.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.