Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

Growth of tin oxide thin films using molecular beam epitaxy in a pyrolyzed nitrogen dioxide atmosphere on a titanium dioxide (1 1 0) substrate was investigated using X-ray photoelectron spectroscopy (XPS), electron diffraction, and atomic force microscopy (AFM). Properties of deposited films were studied for their dependence on substrate temperature and oxidation gas pressure. Analyses using XPS data revealed that tin atoms were fully oxidized to Sn⁴⁺ and SnO₂ films were grown epitaxially in deposition conditions of substrate temperatures of 627 K or higher and NO₂ pressure greater than 3×10⁻³ Pa. At a substrate temperature of 773 K, a smooth surface with atomic steps was visible in the SnO₂ films, but above or below this temperature, fine grains with crystal facets or porous structures appeared. At pressures of 8×10⁻⁴ to 3×10⁻⁴ Pa, the randomly oriented SnO phase was dominantly grown. Further decreasing the pressure, the Sn metal phase, which was epitaxially crystallized at less than 500 K, was also grown.     

The glass transition temperature and infrared absorption spectra of: (70−x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Glasses of the system: (70−x) TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by melt quench technique. Dependencies of their glass transition temperatures (T_g) and infrared (IR) absorption spectra on composition were investigated. It is found that the gradual replacement of oxides, TeO₂ by Li₂O, decreases the glass transition temperature and increases the fragility of the glasses. Also, IR spectra revealed broad weak and strong absorption bands in the investigated range of wave numbers from 4000 to 400 cm⁻¹. These bands were assigned to their corresponding bond modes of vibration with relation to the glass structure.     

Preparation and characterization of new fluorotellurite glasses for photonics application

Glasses based on (85 − x)TeO₂-xZnF₂-12PbO-3Nb₂O₅ (x = 0-40) system have been studied for the first time for fabricating mid-infrared optical fiber lasers. The thermal and optical properties including UV-Vis, Raman as well as FTIR spectra are reported. It is demonstrated that increasing the ZnF₂ concentration to 30 mol% significantly increased the thermal stability of the glass. Adding ZnF₂ also reduced the hydroxyl (OH) content of the glass resulting in lower optical absorption in the mid-infrared region, which is crucial for infrared laser applications. The glass absorption cut-off edge near 400 nm blue-shifts with increasing ZnF₂ addition. Raman spectra show a depolymerization of the glass network with increasing transformation of TeO₃₊₁ to TeO₃ structures.     

Compositional dependence of the optical properties of amorphous Sb2Se3−xSx thin films

Thin films of Sb₂Se_3−xS_x solid solutions (x = 0, 1, 2, and 3) were deposited by thermal evaporation of presynthesized materials on glass substrates held at room temperature. The films compositions were confirmed by using energy dispersive analysis of X-rays (EDAX). X-ray diffraction studies revealed that all the as-deposited films as well as those annealed at T_a < 423 K have amorphous phase. The optical constants (n, k) and the thickness (t) of the films were determined from optical transmittance data, in the spectral range 500-2500 nm, using the Swanepoel method. The dispersion parameters were determined from the analysis of the refractive index. An analysis of the optical absorption spectra revealed an Urbach’s tail in the low absorption region, while in the high absorption region an indirect band gap characterizes the films with different compositions. It was found that the optical band gap energy increases quadratically as the S content increases.     

Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering

To improve the properties of polycrystalline Ge thin films, which are a candidate material for the bottom cells of low cost monolithic tandem solar cells, ∼300 nm in situ hydrogenated Ge (Ge:H) thin films were deposited on silicon nitride coated glass by radio-frequency magnetron sputtering. The films were sputtered in a mixture of 15 sccm argon and 10 sccm hydrogen at a variety of low substrate temperatures (T_s)≤450 °C. Structural and optical properties of the Ge:H thin films were measured and compared to those of non-hydrogenated Ge thin films deduced in our previous work. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increase in T_s. It is found that the introduction of hydrogen gas benefits the structural properties of the polycrystalline Ge film, sputtered at 450 °C, although the onset crystallization temperature is ∼90 °C higher than in those sputtered without hydrogen. Compared with non-hydrogenated Ge thin films, hydrogen incorporated in the films leads to broadened band gaps of the films sputtered at different T_s.     

Decrease in dielectric loss of CaCu3Ti4O12 by the addition of TeO2

CaCu₃Ti₄O₁₂ (CCTO) has challenged for the last few years the scientific community due to its large dielectric constant, which is almost temperature and frequency independent, from 100 K to 400 K and from 1 kHz to 1 MHz, respectively. This makes the material desirable for many electronic applications. However, the dissipation factor is very large, with tan δ values, at room temperature and 1 kHz, higher than 0.1.In our work we report how the addition of TeO₂ lowers the dielectric loss and, although there is a decrease of dielectric constant of doped samples relatively to the undoped one, high dielectric constant values are still being reached. The sample of doped CCTO with 1.5% of TeO₂ by weight, presents, at room temperature and 60 kHz, a large dielectric constant, over 3000, and a dissipation factor around 0.09, which represents a decrease on tan δ over 30% relatively to the CCTO undoped sample. Two relaxation processes were identified for all the samples, one at MHz region and the other one at low frequency region (< 1 kHz). DC bias voltage was applied up to 40 V and a strong dc bias influence on the low frequency region was observed both at dielectric and impedance responses of the undoped sample, which was much weaker than the dc bias effects on the 4% Te doped sample.Dielectric measurements will be discussed and correlated with the samples' microstructure, supported on internal barrier layer capacitance (IBLC) and surface barrier layer capacitance (SBLC) models.     

Electrical conductivity of NbN-SiO2 films obtained by ammonolysis of Nb2O5-SiO2 sol-gel derived coatings

The studies of electrical conductivity of NbN-SiO₂ films are reported. To obtain these films, sol-gel derived xNb₂O₅-(100 − x)SiO₂ (where x = 100, 90, 80, 70, 60, 50 mol%) coatings were nitrided at 1200 °C. The nitridation process leads to the formation of some disordered structures, with NbN metallic grains dispersed in insulating SiO₂ matrix. The structure of the samples was studied using X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical conductivity was measured with the conventional four-terminal method in the temperature range from 5 to 280 K. The superconducting transition was not observed even for the sample that does not contain silica. All the samples exhibit negative temperature coefficient of resistivity. The results of conductivity versus temperature may be described on the grounds of a model proposed for a weakly disordered system.     

Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis

This study investigated the effect of the substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO₂ films prepared by a spray deposition method. The films were deposited at various substrate temperatures ranging from 300-500 °C in steps of 50 °C and characterized by different optical and structural techniques. X-ray diffraction studies showed that the crystallite size and preferential growth directions of the films were dependent on the substrate temperature. These studies also indicated that the films were amorphous at 300 °C and polycrystalline at the other substrate temperatures used. Infrared and visible spectroscopic studies revealed that a strong vibration band, characteristic of the SnO₂ stretching mode, was present around 630 cm⁻¹ and that the optical transmittance in the visible region varied over the range 75-95% with substrate temperature, respectively. The films deposited at 400 °C exhibited the highest electrical conductivity property.     

The effect of PbF2 content on the microstructure and upconversion luminescence of Er-doped SiO2-PbF2-PbO glass ceramics

The Er³⁺ doped transparent oxyfluoride glass ceramics were obtained by appropriate heat treatment of the precursor glasses with composition (mol%) 50SiO₂-xPbF₂-(50 − x)PbO-0.5ErF₃. The microstructure and optical properties of the glasses and glass ceramics were determined by differential scanning calorimetry (DSC), X-ray diffraction (XRD), absorption spectra and luminescence spectra. The intensity of upconversion luminescence significantly increased in glass ceramics compared to that in precursor glass. The emission bands centered around 660 nm (⁴F_9/2 → ⁴I_15/2) and 410 nm (²H_9/2 → ⁴I_15/2) were simultaneously observed in glass ceramics but cannot be seen in the corresponding precursor glass. The influence of different PbF₂ content on the microstructure and upconversion luminescence of the samples was analyzed in detail. The results indicated that with the increase of PbF₂ content, the Ω₂ was almost the same and the ratios of red to green upconversion luminescence decreased in glass ceramics.     

Crystallization kinetics of the tungsten-tellurite glasses

The crystallization kinetics of the (1 − x)TeO₂-xWO₃ (where x = 0.10, 0.15, and 0.20, in molar ratio) glass system was studied by non-isothermal methods using differential scanning calorimetry (DSC), X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. DSC measurements were performed at different heating rates to study crystallization kinetics of the first crystallization reactions of the glasses. XRD analysis of tungsten-tellurite glasses heat-treated above the first crystallization temperatures revealed that the first crystallization peaks attributed to the α-TeO₂ and γ-TeO₂ crystalline phases for 0.90TeO₂-0.10WO₃ and 0.85TeO₂-0.15WO₃ samples and α-TeO₂ and WO₃ crystalline phases for the 0.80TeO₂-0.20WO₃ sample. Avrami constants, n, calculated from Ozawa equation, were found between 1.14 and 1.44. The activation energies, E_A, for the first crystallization reactions were determined by using the modified Kissinger equation as 379 kJ/mol, 288.1 kJ/mol and 228.8 kJ/mol, for 0.90TeO₂-0.10WO₃, 0.85TeO₂-0.15WO₃ and 0.80TeO₂-0.20WO₃ glasses, respectively.     

Studies of some mechanical and optical properties of: (70 − x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Specimens of the glassy system: (70 − x)TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by the melt-quenching. An ultrasonic pulse-echo technique was employed, at 5 MHz, for measuring: the ultrasonic attenuation, longitudinal and shear wave velocities, elastic moduli, Poisson ratio, Debye temperature and hardness of the present glasses. It is found that the gradual replacement of TeO₂ by Li₂O in the glass matrix up to 30 mol% leads to decrease the average crosslink density and rigidity of prepared samples which affects the properties, i.e., the hardness, ultrasonic wave velocities and elastic moduli are decreased, while the Poisson ratio and the ultrasonic attenuation are increased. Also, optical absorption spectra were recorded in the range, 200-800 nm for these glasses. The obtained results showed that a gradual shift in the fundamental absorption edge toward longer wavelengths occurred. Values of both of the optical energy gap, E_opt, and width tails, ΔE, are determined. It is observed that E_opt is decreased and ΔE increased with the increase of Li₂O in the glass matrix up to 30 mol%. The compositional dependences of the above properties are discussed and correlated to the structure of tested glasses.     

Microstructure and optical properties of (Pb,Ca)TiO3 films grown on Si(1 0 0) substrates by a simple sol-gel process

Amorphous and polycrystalline (Pb_0.76Ca_0.24)TiO₃ (PCT) thin films deposited on an Si(1 0 0) substrate have been prepared by a simple sol-gel process. The microstructure and surface morphologies of the thin films have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The polycrystalline PCT film on the Si(1 0 0) substrate has a tetragonal perovskite structure with grain size from 60 to 110 nm. AFM reveals smooth surfaces and root mean square (rms) roughness of 0.17 and 4.4 nm for amorphous and polycrystalline films, respectively. The refractive index n and extinction coefficient k of the amorphous and polycrystalline thin films was obtained by spectroscopic ellipsometry as a function of the photon energy in the range from 2.0 to 5.4 eV. The maximum n and direct bandgap energies of amorphous and polycrystalline thin films were 2.66 and 4.11 eV, 2.64 and 3.84 eV, respectively.     

1H-1,2,3-triazole,a promising precursor for chemical vapor deposition of hydrogenated carbon nitride

Well-crystallized hydrogenated carbon nitride thin films have been prepared by microwave plasma enhanced chemical vapor deposition (MWPECVD). 1H-1,2,3-triazole+N₂ and Si (1 0 0) were used as precursor and substrate, respectively. Substrate temperature during the deposition was recorded to be 850 °C. The synthesized samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photo-electron spectroscopy (XPS) analyses. The plasma compositions were checked by optical emission spectroscopy (OES). XRD observation strongly suggests that the films contain polycrystalline carbon nitride with graphitic structure of (1 0 0), (0 0 2), (2 0 0) and (0 0 4). XPS peak quantification reveals that the atomic ratio of the materials C:N:O:Si is 32:41:18:9. X-ray photo-electron peak deconvolution shows that the most dominant peak of C (1s) and N (1s) narrow scans correspond to sp² hybrid structure of C₃N₄. These observations indicate that 1H-1,2,3-triazole favors the formation of hydrogenated carbon nitride with graphitic phase by CVD method and thus is in good agreement with XRD results. SEM of surface and OES of plasma also support the formation of polycrystalline carbon nitride films from 1H-1,2,3-triazole+N₂ by CVD.     

The effects of annealing on non-polar (1 1 2¯ 0) a-plane GaN films

Non-polar a-plane (1 1 2¯ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070 °C. Most dislocations were partial dislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were randomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1] direction and aligned perpendicular to the film–substrate interface throughout their length, although the total dislocation density remained unchanged. These changes were accompanied by broadening of the symmetric X-ray diffraction 1 1 2¯ 0 ω-scan widths. The mechanism of movement was identified as dislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice parameter measurements) and evidenced by macroscopic slip bands observed on the sample surface. There was also an increase in the density of unintentionally n-type doped electrically conductive inclined features present at the film–substrate interface (as observed in cross-section using scanning capacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic stacking faults. These data suggest that annealing processes performed close to film growth temperatures can affect both the microstructure and the electrical properties of non-polar GaN films.     

Remark on the optical gap in ZnO-Bi2O3-TeO2 glasses

Four ZnO-Bi₂O₃-TeO₂ glasses were prepared from high purity (4N5) oxides. From measurements of the optical transmission on very thin bulk samples the optical gap was determined at around 3.55 eV for the glasses studied. The temperature dependence of the optical gap was also determined from the room temperature close up to 500 K. Preliminary Raman scattering measurements indicate that with a decrease in TeO₂ content, TeO₄ trigonal bipyramid transformation proceeds into TeO₃ trigonal pyramids.     

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

This paper presents a study of the transition between amorphous and crystalline phases of SiC films deposited on Si(1 0 0) substrate using H₃SiCH₃ as a single precursor by a conventional low-pressure chemical vapor deposition method in a hot-wall reactor. The microstructure of SiC, characterized by X-ray diffraction and high-resolution transmission electron microscopy, is found to vary with substrate temperature and H₃SiCH₃ pressure. The grain size decreases with increasing MS pressure at a given temperature and also decreases with reducing temperature at a given MS pressure. The deposition rates are exponentially dependent on the substrate temperature with the activation energy of around 2.6 eV. The hydrogen compositional concentration in the deposited SiC films, determined by secondary ion mass spectrometry depth profiling, is only 2.9% in the nanocrystalline SiC but more than 10% in the amorphous SiC, decreasing greatly with increasing deposition temperature. No hydride bonds are detected by Fourier transform infrared spectroscopy measurements. The chemical order of the deposited SiC films improves with increasing deposition temperature.     

Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

We report on the epitaxial growth of the intrinsic ferromagnetic semiconductor GdN on Si (1 1 1) substrates buffered by a thick AlN layer, forming a heteroepitaxial system with promise for spintronics. Growth is achieved by depositing Gd in the presence of unactivated N₂ gas, demonstrating a reactivity at the surface that is sufficient to grow near stoichiometric GdN only when the N₂:Gd flux ratio is at least 100. Reflection high-energy electron diffraction and X-ray diffraction show fully (1 1 1)-oriented epitaxial GdN films. The epitaxial quality of the films is assessed by Rutherford backscattering spectroscopy carried out in random and channelling conditions. Magnetic measurements exhibit a Curie temperature at 65 K and saturation magnetisation of 7 μ_B/Gd in agreement with previous bulk and thin-film data. Hall effect and resistance data establish that the films are heavily doped semiconductors, suggesting that up to 1% of the N sites are vacant.     

Spectroscopic properties of Er-doped xGeO2-(80 − x)TeO2-10ZnO-10BaO glasses

Erbium-doped glasses with composition xGeO₂-(80 − x)TeO₂-10ZnO-10BaO were prepared by melt-quenching technique. The phonon sideband spectra and the optical absorption band edges for the host matrix were confirmed by means of the spectral measurements. Standard Judd-Ofelt calculations have been completed to these glasses. The dependence of up-conversion and infrared emission under 980 nm excitation on the glass composition was studied. The quantum efficiencies for the ⁴I_13/2 → ⁴I_15/2 transition of trivalent erbium in the glasses were estimated.     

Controlling metal–insulator transition in the hetero-epitaxial VO2/TiO2 bilayer grown on Al2O3

Hetero-epitaxial VO₂/TiO₂ bilayers were synthesized on Al₂O₃ substrates by using pulsed laser deposition, and their physical properties with the changes of oxygen pressure and the substrate orientation were investigated. A metal–insulator transition of the VO₂ was observed only in a narrow oxygen pressure range of 5–20 mTorr. As the oxygen pressure increased, X-ray diffraction peak for the (2 0 0)VO₂ shifted to a lower 2θ position, while the metal–insulator transition temperature (T_MI) decreased by ∼7 K. On the other hand, T_MI was largely varied with substrate orientation. The (2 0 0)VO₂/TiO₂ on the c-plane sapphire showed the highest T_MI of about 350 K, while the (0 0 2)VO₂/TiO₂ on the m-plane sapphire displayed the lowest T_MI of about 310 K. The (1 0 1)VO₂/TiO₂ on the r-plane and the a-plane exhibited T_MI∼340 and 330 K, respectively. The observed variations of T_MI with the oxygen pressure and substrate orientation were presumably due to the change in oxygen content of the VO₂ layer and/or in lattice strain.     

Deposition of mechanically hard amorphous carbon nitride films from decomposition of BrCN. Effects of substrate cooling and pulsed rf-bias voltage

Mechanically hard amorphous carbon nitride films were formed by applying a combination of radio frequency (RF) bias voltage to the substrate and the chemical vapor deposition process using the decomposition reaction of BrCN with the microwave discharge flow of Ar. Cooling water was circulated inside the substrate stage. The maximum hardness was (17 ± 1) GPa for the film prepared under the negative RF bias voltage, −V_RF, of 30 V. This hardness was nearly twice that of the film prepared without cooling, suggesting that substrate cooling was effective for suppressing the relaxation of the internal stress of the film due to the temperature rise during the application of the RF bias voltage. Under the continuous operation of the RF bias voltage, films cannot be formed for −V_RF > 40 V because of the sputtering by the bombardment of energetic Ar⁺. Then, the RF bias voltage was applied with a pulsed operation. By using this operation films were prepared in the range of −V_RF = 40-100 V. The hardness, (36 ± 10) GPa, was obtained for the film obtained under the conditions of −V_RF = 100 V, the pulse period of 1000 s, and the pulse-on time of 800 s. The observed hardness scattered largely for the different observation points within this film; a single observation point in that film showed the maximum hardness of 46 GPa. According to the IR spectra of the films, the three-dimensional C-N network structure was developed.