Preparation and characterization of transparent Eu doped Y2O3 aerogel monoliths, for application in luminescence

This paper focuses on a new sol-gel preparation method of Eu doped Y₂O₃ aerogels, for application in luminescence and their characterization. The preparation method is based on a sol-gel technique using metal salts, by controlling the hydrolysis of these precursors with an epoxide. The monoliths prepared in this manner are transparent in the visible radiation domain. They have a mesoporous texture, a specific surface area of ≈350 to 400 m² g⁻¹ and they are X-ray amorphous. The gel network could be clearly observed by Transmission Electron Microscopy and showed the presence of localized poorly crystalline nanodomains, with some Eu segregation. A first evaluation of the luminescence which they develop during crystallization, has been carried out as a function of the heat treatment schedule.     

Defect-induced luminescence in Co(II)-doped anatase TiO2 prepared by the sol-gel method

The defect luminescence properties of titania sol-gel materials doped with Co²⁺ ions are reported. The laser irradiation of Co-doped titania samples produces a fluorescence, which is reduced as the continuous irradiation time is increased. The fluorescence decay depends on irradiation time as a double exponential function; the characteristic times involved for the luminescence quenching are in the range of seconds. We have associated the suppression of luminescence to the effect of the local heating produced by the laser beam on the reduction of physical defects such as grain boundaries, surface states and chemical defects originating from oxygen vacancies.     

Structural and electrical characterization of ALCVD ZrO2 thin films on silicon

We report on the structural and electrical properties of ZrO₂ thin layers grown on Si by atomic layer chemical vapour deposition. Atomic force microscopy, X-ray diffraction, X-ray reflectivity and time-of-flight secondary ion mass spectrometry have been used to characterize as-grown and annealed samples. High frequency capacitance-voltage measurements have been performed to determine the capacitance of the gate dielectric stack. The ZrO₂ film is found to be polycrystalline. Electrical and structural data suggest a coherent picture of film modification upon annealing.     

Structural and optical properties of thin films prepared from surface modified ZrO2

This paper describes the preparation and characterization of ZrO₂ thin films deposited on silicon wafer by spin coating method. Nanocrystalline ZrO₂ was synthesized by hydrothermal method using zirconium (IV)-n-propoxide as a precursor material. Surface of the ZrO₂ particles was then modified with 2-acetoacetoxyethyl methacrylate used as a copolymer for coatings. The optical properties, nanostructure and surface morphology of the thin films prepared from surface modified ZrO₂ nanoparticles were examined by optical spectroscopy, X-ray diffraction and scanning electron microscopy, respectively. It was found that the films deposited on silicon wafer have crystalline structure of monoclinic (111) at temperature of 150 °C. It was observed that films depict very dense material that does not present any granular or columnar structure. It was found that optical transparency of thin ZrO₂ films distributed in the range of 30-40 percent in the spectral range 400-800 nm. Refractive index of ZrO₂ films were determined as functions of ZrO₂ content and it was found that the refractive index increases from 1.547 to 1.643 with increased ZrO₂ content.     

Preparation and characterization of ZrO2-SiO2 binary films for planar optical waveguides

ZrO₂-SiO₂ binary films for active optical waveguides were prepared by the sol-gel method with zirconium oxychloride and tetraethoxysilane as precursors. The main factors that influence the film thickness and refractive index have been found. The relationship between the film refractive index composition and heat treatment temperature has been determined. The continuous tuning of the thickness and refractive index of the thin films has also been achieved, which will open up new possibilities in the development of active optical waveguides.     

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.     

Cathodoluminescence of Ge, Si, and O implanted SiO2 layers and the role of mobile oxygen in defect transformations

Thermally grown SiO₂ layers of thickness d=500 nm have been implanted by Ge⁺, Si⁺, and O⁺ ions of energy 350, 150, and 100 keV, respectively, and a uniform implantation dose of D_i=5×10¹⁶ ions/cm². Thus the implantation profiles are expected with a concentration maximum of nearly 4 at.% at the half-depth d_m≅250 nm of the SiO₂ layers. After thermal annealing to 900 °C for 1 h in dry nitrogen or vacuum the typical violet luminescence band (λ=400 nm) of the Ge⁺ implanted centers is increased more than 200-fold and the Ge luminescent center depth profile is shifted from about 250 to 170 nm towards the surface as determined by cathodoluminescence (CL) depth profiling. Implanting oxygen increases the red band (λ=650 nm) but does not affect the blue band (λ=460 nm). Silicon surplus increases the amplitude of the blue (B) luminescence, but reduces the amplitude of the red (R) one. Studying the irradiation dose dependence of these blue and red bands we have established defect kinetics in SiO₂ including six main defects and precursors, including the non-bridging oxygen hole center for the red luminescence, the twofold-coordinated silicon as the oxygen deficient center ODC(2) for the blue luminescence and the mobile oxygen as the main transmitter between precursors and the radiation induced defects. The kinetics are described by a set of eight differential equations which predict the dose dependence of the CL.     

Structural investigation of SnO-B2O3 glasses by solid-state NMR and X-ray photoelectron spectroscopy

Local structure of the SnO-B₂O₃ glasses was investigated using several spectroscopic techniques. ¹¹B MAS-NMR spectra suggested that BO₄ tetrahedral units maximized at around the composition with 50 mol% SnO. The BO₄ units were still present at compositions with high SnO content (67 mol% SnO), suggesting that SnO acted not only as a network modifier but also as a network former. O1s photoelectron spectra revealed that the addition of small amounts of SnO formed non-bridging oxygens (NBO) (B-O?Sn) and the amounts of NBO increased with an increase in SnO content. ¹¹⁹Sn Mössbauer spectra indicated that Sn was present only as Sn(II) in the glasses. The structure of the SnO-B₂O₃ glasses was compared with that of conventional alkali borate glasses and lead borate glasses. The thermal and viscous properties of these glasses were discussed on the basis of the glass structure revealed in the present study.     

Sol-gel processing of TeO2-TiO2-PbO thin films

TeO₂-TiO₂-PbO thin films were prepared by sol-gel processing from tellurium(IV) isopropoxide precursor and their transmittance spectrum was measured, from which the refractive index was calculated. The hydrolysis of tellurium(IV) isopropoxide and the decomposition process of its hydrolysis product were investigated. The discrepancy between the observed hydrolysis behavior of tellurium(IV) isopropoxide and the partial charge model on the reactivity of metal alkoxides toward hydrolysis, being calculated with the Pauling electronegativity, is explained by a combination of the inductive and steric effects of isopropoxide groups and the electronic configuration of the tellurium atom with lone pair electrons.     

Structure and properties of Ge2.5PSx glasses

Ge_2.5PS_x glasses were studied with a combination of Raman spectroscopy, nuclear magnetic resonance, and neutron diffraction. From these experiments the distribution of bonding configurations was determined, and used to explain the compositional dependence of the index of refraction and the glass transition temperature. On reducing the sulfur content of these glasses below the stoichiometric amount, the sulfur deficit is accommodated by the progressive loss of the non-bridging sulfur of SPS_3/2 groups, followed by the conversion of the resultant PS_3/2 groups into species such as P₄S₃ characterized by P-P bonding. The presence of metal-metal bonds involving germanium, found in samples with the lowest sulfur content, was found to be the most important structural feature in determining the optical response.     

Novel carbon materials obtained by reactions of C60 fullerene with phosphorus at high temperature

C₆₀ fullerene reacted with phosphorus at high temperatures to graphitic materials with strongly differing properties. Several spectroscopic investigations as Raman, ESR, XPS and ³¹P-NMR as well as TEM and ESEM have shown that the structural order of the mostly micro-crystalline materials increased with increasing reaction temperatures and decreasing phosphorus content. At suitable preparation conditions carbon nanotubes are formed, which are disordered in most cases, but partly exhibit high structural order (single-wall nanotubes), too. The prepared materials are very hard, e.g. harder than silica, intensely coloured and electrically conductive. Their hardness decreased with rising phosphorus content, and their conductivity increased with decreasing phosphorus content.     

Local structure of LuBO3 prepared via sol-gel process and its transformation with temperature: B-NMR and L-edge XAS studies

The present work deals with the temperature effect on the stability range of LuBO₃ prepared by sol-gel synthesis. Structural modifications from vaterite to calcite form versus the thermal treatments have been measured by X-ray diffraction and infrared spectroscopy. Several samples derived from the xerogel annealed at 400, 800 and 1200 °C were studied by ¹¹B solid state NMR and at the lutetium L_I-L_III edges by X-ray absorption spectroscopy to determine the local atomic arrangement around the rare earth and the boron ions. The predominance of BO₄ groups and the eightfold coordination of lutetium atoms in the LuBO₃ xerogel in samples treated up to 800 °C indicate an evolution of the xerogel to vaterite form after thermal treatment instead of the expected calcite form as established for samples prepared by solid state reaction.     

Luminescence behavior of Er ions in glass-ceramics containing CaF2 nanocrystals

The upconversion luminescence and near infrared luminescence of the Er³⁺ ions in transparent oxyfluoride glass-ceramics containing CaF₂ nanocrystals have been investigated. The formation of CaF₂ nanocrystals in the glass-ceramics was confirmed by XRD. The oscillator strengths for several transitions of the Er³⁺ ions in the glass and glass-ceramics have been obtained and then the Judd-Ofelt parameters were calculated. The split near infrared emission peaks of the Er³⁺ ions in the glass-ceramics can be observed because the Er³⁺ ions have been incorporated into crystalline environment of the CaF₂ nanocrystals. The upconversion luminescence intensity of Er³⁺ ions in the glass-ceramics increased significantly with increasing heat treated time. The transition mechanism of the upconversion luminescence has been ascribed to a two-photon absorption process.     

Sol-gel preparation and optical properties of SiO2-Ta2O5 glass

Tantalum-doped silica glass was fabricated by the sol-gel process in order to obtain a glass with a high refractive index for optical use. A crack-free, clear glass rod was successfully prepared from a low-density gel and used as the core material for fabricating optical fibers. Transmission loss in the fabricated fibers was high, in the range of 10³-10⁴ dB/km, which may be caused by coloration due to the multivalency of tantalum; however, the loss was reduced by nearly one order of magnitude by heat treatment at 800 °C, that is, to 75 dB/km at a wavelength of 0.8 μm.     

Bridging, non-bridging and free (O) oxygen in Na2O-SiO2 glasses: An X-ray Photoelectron Spectroscopic (XPS) and Nuclear Magnetic Resonance (NMR) study

High resolution Na 1s, O 1s and Si 2p core level XPS spectra of six Na₂O-SiO₂ glasses ranging in composition from 100 to 45 mol % SiO₂ have been collected using the Kratos Ultra Axis instrument with its unique charge compensation system. The O 1s spectra for the glasses are well resolved so that bridging oxygen (BO, Si-O-Si) and non-bridging oxygen (NBO, Na-O-Si) signals can be accurately fitted and quantified without resorting to constraints or assumptions. The same samples were analysed by ²⁹Si MAS NMR to obtain Q-species abundances from which BO and NBO proportions were calculated. Similar BO:NBO ratios were obtained by both methods over the entire compositional range studied. They are also consistent with most previous XPS and NMR results for glasses containing more than ~ 65 mol % SiO₂. Our XPS and NMR experimental results, however, differ somewhat from previously published XPS and NMR results for glasses containing less than about 65 mol % SiO₂.Na is mobile in the X-ray beam and mobility causes BO:NBO ratios to increase with time of exposure. Na mobility here has been circumvented to yield reliable BO:NBO ratios of the glasses. The ratios are lower than previously reported in XPS studies and are similar to ratios obtained from our ²⁹Si MAS NMR results on the same glasses. The XPS and ²⁹Si MAS NMR results also indicate the presence of a third oxygen species in sodic glasses. As has been proposed for CaSiO₃ glass and for sodic and potassic glasses containing La, we suggest that O²⁻ is present in sodic glasses at small concentrations. The O²⁻ content correlates with increased soda content and may be associated with, and instrumental in development of, three dimensional percolation channels in the glasses. The XPS O 1s line width of the BO peak is broader than the NBO peak, indicating more than one contribution to the BO peak. As observed in crystalline Na metasilicate and Na disilicate, BO of Na-silicate glasses may be of two types, one arising from BO bridging two Si atoms, and the second BO signal arising from BO bonded not only to two Si atoms but also to Na.     

Structural investigations of copper doped B2O3-Bi2O3 glasses with high bismuth oxide content

Raman and infrared spectroscopy have been employed to investigate the 99.5%[xB₂O₃(1−x)Bi₂O₃]0.5%CuO glasses with different Bi/B nominal ratios (0.07?x?0.625) in order to obtain information about the competitive role of B₂O₃ and Bi₂O₃ in the formation of the glass network. The glass samples have been prepared by melting at 1100 °C and rapidly cooling at room temperature. In order to relax the structure, to improve the local order and to develop crystalline phases the glass samples were kept at 575 °C for 10 h. The influence of both Bi₂O₃ and CuO on the vitreous B₂O₃ network as well as the local order changes around bismuth and boron atoms in as prepared and heat treated samples was studied. Structural modifications occurring in heat treated samples compared to the untreated glasses have been observed.     

Structure and non-linear optical performance of TeO2-Nb2O5-ZnO glasses

The non-linear optical performance and structure of TeO₂-Nb₂O₅-ZnO glasses was investigated as a function of ZnO content. The third-order non-linear optical susceptibility (χ⁽³⁾) as measured by a Degenerate Four Wave Mixing (DFWM) method, initially increased with increasing ZnO content to about 8.2 × 10⁻¹³ esu for a glass containing 2.5 wt% ZnO, and then decreased to 5.9 × 10⁻¹³ esu as the ZnO content increased to 10 wt%. There was no noticeable change as the ZnO content increased from 10 to 15 wt%. The non-linear optical response time, which caused electron cloud deformation, was from 450 to 500 fs. The structure of these glasses as analyzed by Raman spectroscopy and FT-IR spectra, was affected by the addition of ZnO up to 5 wt%, when, it is believed, the Zn²⁺ ions occupied the interstitial positions in the glass network by replacing the Nb⁵⁺ ions. The replaced Nb⁵⁺ ions occupied the network forming positions as the Te⁴⁺ ions. Increasing ZnO > 5 wt% did not have any further effect on the glass structure.     

X-ray absorption and Raman characterizations of TeO2-Ga2O3 glasses

The thermodynamic properties of transparent glasses prepared in the TeO₂-Ga₂O₃ system were investigated by differential scanning calorimetry. The change of the thermal parameters as a function of the chemical composition is discussed. Raman and both Te L_III and Ga K edge X-ray absorption spectroscopies at room temperature were used to examine the short range order. Analyses of the spectra suggest that the addition of Ga₂O₃ content to the TeO₂ glass matrix induces the transformation of trigonal bipyramids (TeO₄E, E=lone electronic pair 5s² of Te) to trigonal pyramids (TeO₃E) with formation of Te-O-Ga bridging bonds. Furthermore, Ga K edge XANES and EXAFS studies show that Ga atoms exhibit both tetrahedral (GaO₄) and octahedral (GaO₆) environments.     

X-ray photoelectron spectroscopy studies of thin GexSb40−xS60 chalcogenide films

Thin Ge_xSb_40−xS₆₀ (x=5, 15, 20, 25 and 27) chalcogenide films have been investigated by X-ray photoelectron spectroscopy (XPS). X-ray photoelectron spectra show that there is a peculiarity in the relative intensity ratio of the Sb 4d photoelectron peak associated with Sb₂S₃ to the Sb 4d photoelectron peak associated Sb₂S₅ at an average co-ordination number Z of 2.65-2.67. After contamination and photo-oxidation layers were removed from the surface of the films, X-ray photoelectron spectra were measured again. It has been found that binding energies of the Ge 2p and Sb 3d_3/2 photoelectron peaks, which reflect the electronic structure at lower core energy levels, are independent of Z. However, the binding energies of the Ge 3d and Sb 4d photoelectron peaks are more sensitive to Z and have a discontinuity at Z=2.65.