Nanosized structural transformation and nonlinear optical properties of lithium niobium germanate glasses

Glass formation in Li₂O-Nb₂O₅-GeO₂ (LNG) system, the structure and crystallization behavior of glasses that have compositions near the ratio Li₂O/Nb₂O₅ ∼ 1 corresponding to stoichiometry of ferroelectric phase LiNbO₃ were examined by differential thermal analysis, X-ray diffraction, small-angle neutron scattering and second harmonic generation (SHG). LNG glasses were subjected to heat treatments at temperatures in the range between T_g and temperature of the first exothermic peak in order to initiate nonlinear optical activity by nanoheterogeneity formation. Transparent nanostructured glasses with second-order optical nonlinearity were obtained for compositions characterized by the Li₂O/Nb₂O₅ molar ratio ranging from 0.83 to 1.2 and GeO₂ 40-45 mol%. As prolonged heat treatments of nanostructured glasses result in crystallization of ferroelectric LiNbO₃ the origin of SHG in transparent LNG glasses is supposed to be connected predominantly with polarity of nanoheterogeneities formed at the initial stage of phase separation.     

Polyvinylidene fluoride-hexafluoropropylene (PVdF-HFP)-based composite polymer electrolyte containing LiPF3(CF3CF2)3

This paper describes the preparation and characterization of lithium fluoroalkylphosphate-containing composite polymer electrolyte based on a polyvinylidene fluoride-hexafluoropropylene (PVdF-HFP) matrix. A mixture of ethylene carbonate and diethyl carbonate was used as a plasticizing agent and nanoscopic Al₂O₃ as a filler. The membranes were characterized by ac impedance, SEM, DSC, FTIR and fluorescence. An electrolyte with 2.5 wt% Al₂O₃ exhibited a conductivity of 9.8 × 10⁻⁴ S cm⁻¹ at ambient temperature. It was found that filler contents above 2.5 wt% rendered the membranes less conducting.     

Thermal properties and crystallization of iron phosphate glasses containing up to 25 wt% additions of Si-, Al-, Na- and U-oxides

The thermal properties (expansion, T_g and T_SOFT.) of glasses, having 56-66% P₂O₅, 14.8-34.2% Fe₂O₃ and 2-25 wt% additions of SiO₂, Al₂O₃, Na₂O and UO₂, were comparatively estimated from dilatometric measurements in similar conditions. The T_g reversibility was clearly verified by varying the heating rates between 1 and 5 °C min⁻¹. From linear equations fits of the various glass properties as functions of the six components it is suggested the iron, sodium and uranium oxides decrease the thermal expansion (for 50 < T ? 300 °C), T_g and T_SOFT. From DTA/XRD analysis of three glasses it was confirmed the crystallization tendency decreased with increasing the UO₂ level in the glasses. Leaching test data for two compositions containing Na₂O suggest addition of UO₂ increases the chemical durability of the related glass. The roles of UO₂, Na₂O and Fe-oxide species as structural components of the glass network are discussed.     

Devitrification behavior and structure of Li2O-B2O3-Al2O3 composite gels from metal alkoxides

(30 − x/2)Li₂O·(70 − x/2)B₂O₃·xAl₂O₃(x = 0, 5 and 10) composite gels have been fabricated by the sol-gel method. LiOCH₃, B(OC₄H₉)₃, and Al(OC₄H₉)₃ were used as precursor for Li₂O, B₂O₃, and Al₂O₃, respectively. B(OC₄H₉)₃ and Al(OC₄H₉)₃ were hydrolyzed separately and then mixed. The crystallization behavior and structure of the gels upon thermal treatment temperatures between 150 and 550 °C are characterized on the basis of SEM, XRD and IR analyses. Xerogel with x = 0 exhibits non-crystal features, whereas crystalline phases are found in the xerogels with x = 5 and 10. The crystalline phases are not found with increasing heat treatment temperatures from 150 to 450 °C, but crystalline phases appear present at 550 °C. The xerogel with x = 0, subject to thermal treatment below 450 °C, is found to be still amorphous, and a 550 °C heat treatment leads its structure changing from glassy to crystalline.     

Phase separation and crystallization in the system SiO2-Al2O3-P2O5-B2O3-Na2O glasses

The phase separation and crystallization behavior in the system (80 − X)SiO₂ · X(Al₂O₃ + P₂O₅) · 5B₂O₃ · 15Na₂O (mol%) glasses was investigated. Glasses with X = 20 and 30 phase separated into two phases, one of which is rich in Al₂O₃-P₂O₅-SiO₂ and forms a continuous phase. Glasses containing a larger amount of Al₂O₃-P₂O₅ (X = 40 and 50) readily crystallize and precipitates tridymite type AlPO₄ crystals. It is estimated that the phase separation occurs forming continuous Al₂O₃-P₂O₅-SiO₂ phase at first, and then tridymite type AlPO₄ crystals precipitate and grow in this phase. Highly transparent glass-ceramics comparable to glass can be successfully obtained by controlling heat treatment precisely. The crystal size and percent crystallinity of these transparent glass-ceramics are 20-30 nm and about 50%, respectively.     

Studies of some mechanical and optical properties of: (70 − x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Specimens of the glassy system: (70 − x)TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by the melt-quenching. An ultrasonic pulse-echo technique was employed, at 5 MHz, for measuring: the ultrasonic attenuation, longitudinal and shear wave velocities, elastic moduli, Poisson ratio, Debye temperature and hardness of the present glasses. It is found that the gradual replacement of TeO₂ by Li₂O in the glass matrix up to 30 mol% leads to decrease the average crosslink density and rigidity of prepared samples which affects the properties, i.e., the hardness, ultrasonic wave velocities and elastic moduli are decreased, while the Poisson ratio and the ultrasonic attenuation are increased. Also, optical absorption spectra were recorded in the range, 200-800 nm for these glasses. The obtained results showed that a gradual shift in the fundamental absorption edge toward longer wavelengths occurred. Values of both of the optical energy gap, E_opt, and width tails, ΔE, are determined. It is observed that E_opt is decreased and ΔE increased with the increase of Li₂O in the glass matrix up to 30 mol%. The compositional dependences of the above properties are discussed and correlated to the structure of tested glasses.     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.     

Effect of fluorspar and alumina on the viscous flow of calcium silicate melts containing MgO

For the investigation of the effect of fluorspar and alumina on the viscous flow and the crystallization behavior of the silicate melts, the viscosity of the CaO-SiO₂-10 wt%MgO-CaF₂ (or -Al₂O₃) system was measured. The addition of CaF₂ decreased the crystallization temperature (T_CR) of the CaO-SiO₂-MgO-CaF₂ system, while the T_CR of the CaO-SiO₂-MgO-Al₂O₃ (wt%CaO/wt%SiO₂=1.0) system exhibited a minimum value at 10 wt% Al₂O₃. The activation energy was decreased in the CSMF system and vice versa in the CSMA system by addition of CaF₂ or Al₂O₃ in each system. From the relationship between the activation energy and the composition of the glasses, the following equation could be obtained. , where the B^total is the ratio of (wt%CaO + wt%CaF₂ + wt%MgO)/(wt%SiO₂ + wt%Al₂O₃). This means that CaO, CaF₂, and MgO would behave as a network modifier, while SiO₂ and Al₂O₃ behave as a network former in the glasses investigated.     

The effect of composition on spinel crystals equilibrium in low-silica high-level waste glasses

The liquidus temperature (T_L) and the equilibrium mass fraction of spinel were measured in the regions of low-silica (less than 42 mass% SiO₂) high-level waste borosilicate glasses within the spinel primary phase field as functions of glass composition. The components that varied, one at a time, were Al₂O₃, B₂O₃, Cr₂O₃, Fe₂O₃, Li₂O, MnO, Na₂O, NiO, SiO₂, and ZrO₂. In the low-silica region, Cr₂O₃ increased the T_L substantially less, and Li₂O and Na₂O decreased the T_L significantly less than in the region with 42-56 mass% SiO₂. The temperature at which the equilibrium mass fraction of spinel was 1 mass% was 25-64 °C below the T_L.     

Structure and thermal stability of (Zr0.6Al0.4)O1.8 thin film on strained SiGe layer

Zr_0.6Al_0.4O_1.8 dielectric films were deposited directly on strained SiGe substrates at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N₂ under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr_0.6Al_0.4O_1.8 film is about 900 °C, 400 °C higher than that of pure ZrO₂. The amorphous Zr_0.6Al_0.4O_1.8 film with a physical thickness of ∼12 nm and an amorphous interfacial layer (IL) with a physical thickness of ∼3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800 °C in the Zr_0.6Al_0.4O_1.8 film. The chemical composition of the Zr_0.6Al_0.4O_1.8 film has been studied using secondary ion mass spectroscopy (SIMS).     

Crystallization behavior and microstructure of powdered and bulk ZnO-Al2O3-SiO2 glass-ceramics

The crystallization behavior of glass with the composition: 55.6 mol% SiO₂, 22.8 mol% Al₂O₃, 17.7 mol% ZnO and 3.84 mol% of TiO₂ as nucleating agent and with different particle sizes has been studied by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and tranmission electron microscopy (TEM). In glass powders two crystalline phases: zinc-aluminosilicate s.s. with high-quartz structure, Zn_x/2Al_xSi_3−xO₆, (x varies dependent on heat-treatment temperature) and gahnite are formed. The ratio of these phases depends on particle sizes. In bulk glass, however, gahnite is the sole crystalline phase. The composition of initially formed zinc-aluminosilicate s.s. was determined by Rietveld refinement of XRD patterns to be Zn_0.69Al_1.38Si_1.62O₆. With temperature increase, the amount of zinc-aluminosilicate s.s decreased with simultaneous reduce of zinc and aluminum incorporated in the structure. Eventually at 1423 K almost pure high-quartz structure was formed. The activation energies of zinc-aluminosilicate s.s. and gahnite crystallization were determined by non-isothermal method to be 510 ± 18 and 344 ± 17 kJ mol⁻¹, respectively. The latter value matches well with those cited in literature for crystal growth of gahnite in similar glasses. That is attributed to the fact that the high-quartz structure acts as a precursor for gahnite crystallization.     

The glass transition temperature and infrared absorption spectra of: (70−x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Glasses of the system: (70−x) TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by melt quench technique. Dependencies of their glass transition temperatures (T_g) and infrared (IR) absorption spectra on composition were investigated. It is found that the gradual replacement of oxides, TeO₂ by Li₂O, decreases the glass transition temperature and increases the fragility of the glasses. Also, IR spectra revealed broad weak and strong absorption bands in the investigated range of wave numbers from 4000 to 400 cm⁻¹. These bands were assigned to their corresponding bond modes of vibration with relation to the glass structure.     

The comparative structure, properties, and ionic conductivity of LiI + Li2S + GeS2 glasses doped with Ga2S3 and La2S3

The well known and characterized fast ion conducting (FIC) LiI + Li₂S + GeS₂ glass-forming system has been further optimized for higher ionic conductivity and improved thermal and chemical stability required for next generation solid electrolyte applications by doping with Ga₂S₃ and La₂S₃. These trivalent dopants are expected to eliminate terminal and non-bridging sulfur (NBS) anions thereby increasing the network connectivity while at the same time increasing the Li⁺ ion conductivity by creating lower basicity [(Ga or La)S_4/2]⁻ anion sites. Consistent with the finding that the glass-forming range for the Ga₂S₃ doped compositions is larger than that for the La₂S₃ compositions, the addition of Ga₂S₃ is found to eliminate NBS units to create bridging sulfur (BS) units that not only gives an improvement to the thermal stability, but also maintains and in some cases increases the ionic conductivity. The compositions with the highest Ga₂S₃ content showed the highest T_gs of ∼325 °C. The addition of La₂S₃ to the base glasses, by comparison, is found to create NBS by forming high coordination octahedral LaS₆³⁻ sites, but yet still improved the chemical stability of the glass in dry air and retained its high ionic conductivity and thermal stability. Significantly, at comparable concentrations of Li₂S and Ga₂S₃ or La₂S₃, the La₂S₃-doped glasses showed the higher conductivities. The addition of the LiI to the glass compositions not only improved the glass-forming ability of the compositions, but also increased the ionic conductivity glasses. LiI concentrations from 0 to 40 mol% improved the conductivities of the Ga₂S₃ glasses from ∼10⁻⁵ to ∼10⁻³ (Ω cm)⁻¹ and of the La₂S₃ glasses from ∼10⁻⁴ to ∼10⁻³ (Ω cm)⁻¹ at room temperature. A maximum conductivity of ∼10⁻³ (Ω cm)⁻¹ at room temperature was observed for all of the glasses and this value is comparable to some of the best Li ion conductors in a sulfide glass system. Yet these new compositions are markedly more thermally and chemically stable than most Li⁺ ion conducting sulfide glasses. LiI additions decreased the T_gs and T_cs of the glasses, but increased the stability towards crystallization (T_c − T_g).     

Fabrication of a high lithium ion conducting lithium borosilicate glass

A lithium ion conducting glass, Li₂O-B₂O₃-SiO₂, is fabricated by the conventional melt and quenching technique from a mixture of Li₂CO₃, B₂O₃ and SiO₂ powders. It appears that B₂O₃ decreases the crystallization tendency of the Li₂O-SiO₂ binary glass, resulting in an expanded glass forming region in the Li₂O-B₂O₃-SiO₂ ternary glass. The maximum conductivity is 2 × 10^− 6 S cm^− 1 at 25 °C for the 50Li₂O-38B₂O₃-12SiO₂ glass sample. The observed high conductivity is due to the mixed former effect. The conductivity strongly depends on the Li₂O content, but not on K (SiO₂/B₂O₃) in the Li₂O-B₂O₃-SiO₂ ternary glass.     

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (1 1 1)

We present MOVPE-grown, high-quality Al_xGa_1−x N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of Al_xGa_1−xN was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best ω-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1¯ 0) reflection were achieved for a ∼1-μm-thick Al_0.1Ga_0.9N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1¯ 0) reflection of a ∼500-nm-thick Al_0.65Ga_0.35N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, Al_xGa_1−x N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations.     

Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition

High-quality zinc oxide (ZnO) films were successfully grown on ZnO-buffered a-plane sapphire (Al₂O₃ (1 1 2¯ 0)) substrates by controlling temperature for lateral growth using chemical bath deposition (CBD) at a low temperature of 60 °C. X-ray diffraction analysis and transmission electron microscopy micrographs showed that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. Rocking curves (ω-scans) of the (0 0 0 2) reflections showed a narrow peak with full width at half maximum value of 0.50° for the ZnO film. A reciprocal space map indicated that the lattice parameters of the ZnO film (a=0.3250 nm and c=0.5207 nm) were very close to those of the wurtzite-type ZnO. The ZnO film on the ZnO-buffered Al₂O₃ (1 1 2¯ 0) substrate exhibited n-type conduction, with a carrier concentration of 1.9×10¹⁹ cm⁻³ and high carrier mobility of 22.6 cm² V⁻¹ s⁻¹.     

Vitrification and crystallization in the system of K2O-B2O3-TiO2

The vitrification and crystallization behavior of melts produced at 1400 °C in the ternary system of K₂O-B₂O₃-TiO₂ is investigated. It is shown that there are two fields of compositions (indicated in mol%) which allow obtaining the glass-ceramic materials with continuous glassy matrix after the cooling of molten compositions. In the first field [TiO₂] = 25-57, [K₂O] = 30-50 and [B₂O₃] = 0-25, the glass-ceramics consisted of the potassium-titanium-borate glassy phase and different crystalline potassium titanates (K₄Ti₃O₈, K₂Ti₂O₅, K₂Ti₄O₉, K₂Ti₆O₁₃). The ratio of TiO₂:K₂O in the obtained titanates increases with [TiO₂] and [B₂O₃]. In the second field, [TiO₂] = 7-37, [K₂O] = 0-25 and [B₂O₃] = 52-93, the obtained glass-ceramics consisted of a similar vitreous phase, as mentioned above, and TiO₂ crystals. During the cooling of the melts, short whiskers-like crystals of anatase formed in the compositions with relatively low [TiO₂] and relatively high [K₂O], whereas long fiber-shaped crystals of rutile appeared with the compositions characterized with relatively high [TiO₂] and relatively low [K₂O]. The possible application of the obtained glass-ceramic materials as a source of fibrous TiO₂, for composite reinforcement, and as solid lubricants is discussed.     

Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga₂O₃ powder to GaN under an NH₃/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga₂O₃ starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800–1000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga₂O₃ crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga₂O₃ by NH₃ whereby nitridation of β-Ga₂O₃ proceeds via the intermediate vapor species Ga₂O(g).     

Quenched glasses in the systems of Li2O with Al2O3, Ga2O3 and Bi2O3

By rapid quenching in a twin roller apparatus, glass was found to occur widely in the systems of Li₂O with Al₂O₃, Ga₂O₃, Bi₂O₃ and in mixed systems. Examination of the resulting flakes by X-ray powder diffraction, differential thermal analysis, and capacitance data revealed the occurrence of glass, glass transitions, crystallization exotherms and the nature of some of the crystallization paths.The log ionic conductivity of the glasses was found to follow a linear relationship with the Li concentration. Evidence was observed for three new metastable crystalline phases, one in the Li₂OAl₂O₃ system and two in the Li₂OBi₂O₃ system. The latter system also showed evidence for the occurrence of two glasses at almost all compositions.     

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810 °C and near atmospheric pressure ∼0.14 MPa, have been investigated using low temperature X-band (∼9.5 GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025 mm³, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5 mm³) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the c-axis, with approximate g-values, g_∥=1.951 and g_⊥=1.948 and a peak-to-peak linewidth of∼4.0 G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality.