Mg2+对Fe∶LiNbO3晶体光折变响应时间的影响

在 Fe∶Li Nb O3 中掺进 3 mol%和 6mol% Mg O,生长了 Mg∶Fe∶L i Nb O3 晶体 .测试了 Mg∶Fe∶Li Nb O3 晶体抗光致散射能力、衍射效率、响应时间和光电导 .推导响应时间与光电导之间的关系 .在 Fe∶Li Nb O3 晶体中掺进 6mol%的 Mg2 + ,它的抗光致散射能力比Fe∶L i Nb O3 晶体提高一个数量级 ,响应速度比 Fe∶Li Nb O3 晶体提高四倍     

Tb、Fe双掺LiNbO3晶体的生长及其光折变效应的研究

用提拉法从熔体中生长出Tb、Fe双掺LiNbO₃晶体,用二波耦合方法测试了晶体的指数增益系数、衍射效率和响应时间。Tb:Fe:LiNbO₃薄晶片中,由于光爬行作用,使得晶体的指数增益系数和衍射效率大大增强,掺入Tb后晶体的光电导值增大,响应时间缩短。     

LiNbO3:Fe晶体中光写入阵列平面光波导的实验实现

采用两束相干平行光形成的干涉光场辐照LiNbO₃: Fe晶体,通过光折变效应在晶体中写入了阵列平面光波导.分别采用马赫-曾德干涉仪光路和光栅衍射法测量了阵列平面光波导的横向折射率分布和周期,并对所写入的阵列平面光波导进行了初步的导光测试.实验结果表明,用这种方法写入阵列平面光波导简便可行.     

Mg2+对Ce:Fe:LiNbO3晶体光折变性能的作用和影响

在Ce(0.1wt%):Fe(0.08wt%):LN中掺进摩尔分数为（0.2%,0.4%,0.6%）的MgO,采用提拉法生长Mg:Ce:Fe:LN晶体.测试晶体的吸收光谱,Mg:Ce:Fe:LN晶体的吸收边相对Ce:Fe:LiNbO3晶体发生紫移,Mg(6%):Ce:Fe:LN晶体OH－吸收峰移到3 532 cm－1,研究OH－吸收峰移动机理.以二波耦合光路测试Mg:Ce:Fe:LN晶体的指数增益系数和响应时间,发现Mg:Ce:Fe:LN晶片厚度减小时指数增益系数显著增加.首次采用光爬行效应解释指数增益系数增加机理.     

掺锌LiNbO3晶体的生长及其光学性能

在LiNbO₃中掺进3mol%、5mol%、7mol%ZnO生长Zn:LiNbO₃晶体.测试Zn:LiNbO₃晶体的吸收光谱,研究Zn:LiNbO₃晶体吸收边紫移的机制.测试Zn:LiNbO₃晶体的红外光谱,研究Zn(7mol%):LiNbO₃晶体OH 吸收峰由3484cm^-1移到3530cm^-1的机制.测试Zn:LiNbO₃晶体倍频转换效率和相位匹配温度,研究Zn:LiNbO₃晶体倍频转换效率增强的机制.     

Mg:Fe:LiNbO3晶体的生长及光学性能研究

在Fe:LiNbO₃中掺进MgO和Fe₂O₃以提拉技术生长Mg:Fe:LiNbO₃晶体.对晶体进行极化和还原处理.测试晶体的吸收光谱,Mg:Fe:LiNbO₃晶体吸收边相对Fe:LiNbO₃晶体发生紫移.测试晶体的红外光谱,Mg:(5 mol%)Fe:LiNbO₃晶体OH^-吸收峰由Fe:LiNbO₃晶体的3482 cm^-1移到3534 cm^-1.采用锂空位模型阐述Mg:Fe:LiNbO₃晶体,吸收边和OH-吸收峰移动的机理.测试晶体的抗光致散射能力.Mg:(5 mol%)Fe:LiNbO₃晶体抗光致散射能力比Fe:LiNbO₃晶体提高一个数量级以上.测试晶体的衍射效率和响应时间.Mg:Fe:LiNbO₃晶体响应速度比Fe:LiNbO₃晶体提高四倍.     

Zn:Fe:LiNbO3晶体全息存储性能研究

以提拉法生长Zn(1mol%):Fe:LiNbO3, Zn(4mol%):Fe:LiNbO3,Zn(7mol%):Fe:LiNbO3晶体.Zn:Fe:LiNbO3晶体随着Zn2+浓度的增加,抗光致散射能力增加,Zn(7mol%):Fe:LiNbO3晶体抗光致散射能力比Fe:LiNbO3晶体提高两个数量级以上.测试了Zn:Fe:LiNbO3晶体衍射效率、响应时间.以Zn(7mol%):Fe:LiNbO3晶体作为存储元件,Zn(4mol%):Fe:LiNbO3晶体作为位相共轭镜,进行全息关联存储试验.试验结果显示出成像质量好、图像清晰完整、噪音小等优点.研究了Zn:Fe:LiNbO3晶体全息存储性能增强的机理.Zn(4mol%):Fe:LiNbO3晶体具有全息存储性能最佳的综合指标.     

Mg2+对Ce∶Fe∶LiNbO3晶体光折变性能的作用和影响

在Ce(0.1wt%)∶Fe(0.08wt%)∶LN中掺进摩尔分数为(0.2%,0.4%,0.6%)的MgO,采用提拉法生长Mg∶Ce∶Fe∶LN晶体.测试晶体的吸收光谱,Mg∶Ce∶Fe∶LN晶体的吸收边相对Ce∶Fe∶LiNbO3晶体发生紫移,Mg(6%)∶Ce∶Fe∶LN晶体OH-吸收峰移到3 532 cm-1,研究OH吸收峰移动机理.以二波耦合光路测试Mg∶Ce∶Fe∶LN晶体的指数增益系数和响应时间,发现Mg∶Ce∶Fe∶LN晶片厚度减小时指数增益系数显著增加.首次采用光爬行效应解释指数增益系数增加机理.     

LiNbO3:Fe晶体中光写入波导时折射率的变化规律

研究了利用光辐照法制作光折变波导时LiNbO3:Fe晶体中折射率变化的规律.分别采用波长为6328nm和532nm的寻常偏振和非常偏振的细激光束和片状激光束，在LiNbO3:Fe晶体中进行了写入波导实验.研究表明，制作波导的写入光宜采用寻常偏振光.在利用由光束辐照LiNbO3:Fe晶体形成的正折射率变化区域作为波导结构时，必须严格控制辐照时间.否则，由于长时间光辐照会带来较强的噪音栅以及折射率变化区域会发生扩展，而难以形成优 质波导.利用片光在“三明治”方式辐照下，以小曝光量制作波导时，可以避免噪音栅的 关键词： 光致折射率变化 光折变波导 光辐照法 LiNbO3:Fe晶体     

m线法研究掺杂LiNbO3晶体波导基片的光损伤

采用m线法研究了掺杂LiNbO₃晶体波导基片的光损伤,发现抗光损伤能力依次为Mg:LiNbO₃、LiNbO₃、Fe:LiNbO₃(氧化),Fe:LiNbO₃(还原).对于同样材料,质子交换光波导的抗光损伤能力高于钛扩散光波导。     

Preparation and holographic storage properties of tri-doped Mg:Mn:Fe:LiNbO3 crystals

Doping MgO, MnO and Fe₂O₃ in LiNbO₃ crystals, tri-doped Mg:Mn:Fe:LiNbO₃ single crystals were prepared by the conventional Czochralski method. The UV-vis absorption spectra were measured and the shift mechanism of absorption edge was also investigated in this paper. In Mg:Mn:Fe:LiNbO₃ crystal, Mn and Fe locate at the deep level and the shallow level, respectively. The two-photon holographic storage is realized in Mg:Mn:Fe:LiNbO₃ crystals by using He-Ne laser as the light source and ultraviolet as the gating light. The results indicated that the recording time can be significantly reduced for introducing Mg²⁺ in the Mg:Mn:Fe:LiNbO₃ crystal.     

Growth and optical properties of Mg, Fe Co-doped LiTaO3 crystal

Mg, Fe double-doped LiTaO₃ and LiNbO₃ crystals have been grown by Czochralski method. The optical properties were measured by two-beam coupling experiments and transmitted facula distortion method. The results showed that the photorefractive response speed of Mg:Fe:LiTaO₃ was about three times faster than that of Fe:LiTaO₃, whereas the photo-damage resistance was two orders of magnitude higher than that of Fe:LiTaO₃. In this paper, site occupation mechanism of impurities was also discussed to explain the high photo-damage resistance and fast response speed in Mg:Fe:LiTaO₃ crystal.     

Structure and optical damage resistance of Zn:Mn:Fe:LiNbO3 crystals

The new non-volatile holographic storage materials, Zn:Mn:Fe:LiNbO₃ crystals, were prepared by Czochralski technique. Their microstructure was measured and analyzed by infrared (IR) transmission spectra. The optical damage resistance of Zn:Mn:Fe:LiNbO₃ crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of ZnO is over a threshold concentration. Its value in Zn(7.0 mol%):Mn:Fe:LiNbO₃ crystal is about three orders of magnitude higher that in Mn:Fe:LiNbO₃ crystal. The photoinduced birefringence change was measured by the Sénarmont's method. It decreased with ZnO concentration increasing. The dependence of the defects on the optical damage resistance was discussed.     

Spectroscopic analysis of Er transition in Mg/Er-codoped LiNbO3 crystal

We present a Judd-Ofelt spectroscopic analysis on the Mg/Er-codoped congruent lithium niobate (LiNbO₃) crystals. The Judd-Ofelt model is applied to the room temperature unpolarized absorption intensities of Er³⁺ ions on eleven transition bands to determine their intensity parameters: Ω₂=2.36×10⁻²⁰ cm², Ω₄=0.76×10⁻²⁰ cm², Ω₆=0.30×10⁻²⁰ cm² in Er:LiNbO₃ crystal heavily codoped with MgO. The radiative lifetime of ²H_9/2 becomes longer when MgO is added into Er:LiNbO₃ crystal. The experimental lifetimes are obtained using microsecond time-resolved spectra at 400 nm femtosecond pulse excitation to predict radiative quantum efficiency. Combining higher radiative quantum efficiency with longer radiative lifetime, we conclude that Mg/Er-codoped LiNbO₃ crystals are more suitable than Er: LiNbO₃ ones in laser materials.     

BaTiO3晶体自抽运相位共轭特性研究

研究了多种Rh:BaTiO₃和Ce:BaTiO₃晶体样品的受激背向光折变散射自抽运相位共轭特性和响应时间特性.结果表明,入射光与晶体a面或b面法线的夹角较大时,自抽运相位共轭光有更高的反射率、更快响应时间.利用前向二波耦合特性和相向二波耦合特性对实验现象给予合理的解释.实验结果表明,多数Ce:BaTiO₃晶体比Rh:BaTiO₃晶体的共轭光反射率高. 关键词： 钛酸钡晶体 二波耦合 自抽运相位共轭 响应时间     

Study of near-infrared nonvolatile two-center holographic recording in LiNbO3:Fe:Rh crystal

The near-infrared nonvolatile holographic recording has been realized in a doubly doped LiNbO₃:Fe:Rh crystal by the traditional two-center holographic recording scheme, for the first time. The recording performance of this crystal has been investigated by recording with 633 nm red light, 752 nm red light and 799 nm near-infrared light and sensitizing with 405 nm purple light. The experimental results show that, co-doped with Fe and Rh, the near-infrared absorption and the photovoltaic coefficient of shallow trap Fe are enhanced in this LiNbO₃:Fe:Rh crystal, compared with other doubly doped LiNbO₃ crystals such as LiNbO₃:Fe:Mn. It is also found that the sensitizing light intensity affects the near-infrared recording sensitivity in a different way than two-center holographic recording with shorter wavelength, and the origin of experimental results is analyzed.     

A STUDY ON THE RAMAN SPECTRUM OF THE LiNbO3-DOPED Mg CRYSTAL AT LOW TEMPERATURE

The Raman Spectra of LiNbO₃:MgO (6.7 mol%) at both low temperature and room temperature were studied. The results showed that the crystal structure has changed little after doping Mg^{+ +}. At room temperature the lattice distorted a little, which caused the appearance of coupling phenomenon of some individual scattering peaks. As the temperature decreased, the coupling reduced gradually.     

Defect structure and optical damage resistance of Hf:Fe:LiNbO3 crystals

A series of Hf:Fe:LiNbO₃ crystals were grown by the Czochralski technique with various doping concentrations of HfO₂. Their defect structures were analyzed by the UV-visible absorption spectra and infrared absorption spectra. The optical damage resistance of Hf:Fe:LiNbO₃ crystals was measured by the photo-induced birefringence change and the transmitted light spot distortion method. The results show that the optical damage resistance ability of Hf:Fe:LiNbO₃ crystals enhances remarkably with the HfO₂ concentration increasing when the HfO₂ concentration is lower than its threshold concentration (4 mol%). However, when the HfO₂ concentration exceeds its threshold concentration, the optical damage resistance ability of the crystals returns to decrease. This unusual behavior is explained by using the photovoltaic field produced in the crystals.