Formation of spin-polarons in the ferromagnetic Kondo lattice model away from half-filling

Even though realistic one-dimensional experiments in the field of half-metallic semiconductors are not at hand yet, we are interested in the underlying fundamental physics. In this regard we study a one-dimensional ferromagnetic Kondo lattice model, a model in which a conduction band is coupled ferromagnetically to a background of localized d?moments with coupling constant J(H), and investigate the T?=?0 phase diagram as a function of the antiferromagnetic interaction J between the localized moments and the band-filling n, since it has been observed that doping of the compounds has led to formation of magnetic domains. We explore the spin-polaron formation by looking at the nearest-neighbour correlation functions in the spin and charge regimes for which we use the density matrix renormalization group method, which is a highly efficient method to investigate quasi-one-dimensional strongly correlated systems.     

Positive cross correlations in a three-terminal quantum dot with ferromagnetic contacts

We study current fluctuations in an interacting three-terminal quantum dot with ferromagnetic leads. For appropriately polarized contacts, the transport through the dot is governed by dynamical spin blockade, i.e., a spin-dependent bunching of tunneling events not present in the paramagnetic case. This leads, for instance, to positive zero-frequency cross correlations of the currents in the output leads even in the absence of spin accumulation on the dot. We include the influence of spin-flip scattering and identify favorable conditions for the experimental observation of this effect with respect to polarization of the contacts and tunneling rates.     

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin–orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.     

Spectroscopic measurement of spin-dependent resonant tunneling through a 3D disorder: the case of MnAs/GaAs/MnAs junctions

We propose an analytical model of spin-dependent resonant tunneling through a 3D assembly of localized states (spread out in energy and in space) in a barrier. An inhomogeneous distribution of localized states leads to resonant tunneling magnetoresistance inversion and asymmetric bias dependence as evidenced with a set of experiments with MnAs/GaAs(7-10 nm)/MnAs tunnel junctions. One of the key parameters of our theory is a dimensionless critical exponent beta scaling the typical extension of the localized states over the characteristic length scale of the spatial distribution function. Furthermore, we demonstrate, through experiments with localized states introduced preferentially in the middle of the barrier, the influence of an homogeneous distribution on the spin-dependent transport properties.     

Generation and manipulation of spin current via a hybrid four-terminal single-molecule junction

We present a new device which consists of a molecular quantum dot (MQD) attached to a normal-metal, two ferromagnetic (FM), and a superconducting leads. The spin-related Andreev reflection (AR) current and the spin-dependent single-particle tunneling current through the normal-metal terminal are obtained, and it is found that the spin current exhibits the transistor-like behavior. The joint effects of the coherent spin flip and the angle between magnetic moments of the two FM leads on the spin current are also studied, these results provide the possibility to manipulate the spin current with the system parameters.     

Triple Quantum Dot Molecule as a Spin-Splitter

We propose a spin-splitter composed of triple quantum dots that works due to the Coulomb blockade effect and the charge and spin biases applied on external electron source and drains. The spin biases are applied only on the two drains and give their spin-dependent chemical potentials, which act as the driving forces for electron spin-polarized transport. By tuning the biases and the dots＇ levels, spin-up and spin-down electrons can be simultaneously split or separated from the source into two different drains. We show that such a tunneling process is detectable in terms of the spin accumulations on the dots or the currents flowing through the external leads. The present device is quite simple and realizable within currently existing technologies.     

Pumped Spin-Current in Single Quantum Dot with Spin-Dependent Electron Temperature

Spin-dependent electron temperature effect on the spin pump in a single quantum dot connected to Normal and/or Ferromagnetic leads are investigated with the help of master equation method. Results show that spin heat accumulation breaks the tunneling rates balance at the thermal equilibrium state thus the charge current and the spin current are affected to some extent. Pure spin current can be obtained by adjusting pumping intensity or chemical potential of the lead. Spin heat accumulation of certain material can be detected by measuring the charge current strength in symmetric leads architectures. In practical devices, spin-dependent electron temperature effect is quite significant and our results should be useful in quantum information processing and spin Caloritronics.     

Spin-dependent recombination in GaAsN solid solutions

Room-temperature spin-dependent recombination in a series of GaAs_1?xN_x solid solutions (x = 2.1, 2.7, 3.4%) has been observed as manifested by a more than threefold decrease in intensity of the edge photoluminescence upon switching from circular to linear polarization of the exciting light or upon the application of a transverse magnetic field (～300 G). The interband absorption of the circularly polarized light is accompanied by the spin polarization of conduction electrons, which reaches 35% with an increase in the pumping level. The observed effects are explained in terms of the dynamic polarization of deep paramagnetic centers and the spin-dependent trapping of conduction electrons on these centers. The electron spin relaxation time, as estimated from the dependence of the edge photoluminescence depolarization in the transverse magnetic field (the Hanle effect) on the pumping intensity, is on the order of 1 ns. According to the adopted theory, the electron spin relaxation time in the presence of spin-dependent recombination is determined by a slow spin relaxation of localized electrons. The sign (positive) of the g factor of localized electrons has been experimentally determined from the direction of the magnetic-field-induced rotation of their average spin observed in the three GaAsN crystals studied.     

Critical dynamics of a localized moment system coupled to conduction electrons

We discuss the critical dynamics of a system of localized spins interacting with conduction electrons via an isotropic exchange coupling between the respective spin densities. It is shown that the elimination of the conduction electrons by an adiabatic approximation is not allowed for small wave vectors. The quantum mechanical Fokker-Planck equation derived in a previous paper is used to investigate the renormalization of the kinetic coefficients due to nonlinear mode coupling contributions.     

The Andreev tunneling behaviors in the FM/QD/SC system with intradot spin-flip scattering

The resonant behaviors of spin-dependent linear AR conductance, the spin-dependent AR current, the electron occupation number and spin accumulation in the QD are theoretically investigated in the FM/QD/SC system with intradot spin-flip scattering. The novel resonant behaviors of spin-dependent AR conductance versus Fermi energy are revealed, which are rather different from the AR conductance versus the dot's energy level case [Cao et al., Phys. Rev. B 70 (2004) 235341]. It is proved that the split of the resonant peak can be induced by the competition between the coupling strengths to the FM and SC leads, the intradot spin-flip scattering, and the gate voltage. The number, the widths, and the distance of the peaks could be controlled by tuning the relevant parameters. The resonance of AR current can take place only when the energy level of QD lines up with the right lead chemical potential and blows the left lead chemical potential. The magnitude of the resonant AR current depends on the number of resonant levels involved in the Andreev tunneling process. It is also proved that the spin-flip scattering can suppress the spin accumulation effectively, and induce the spin polarization of AR conductance and AR current simultaneously. The results make us understand better the fundamental in this system, and are useful for the design of spintronic devices.     

Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio.     

Collective spin tunneling in spinor Bose-Einstein condensates

We investigate a novel aspect of rotational tunneling of the macroscopic spin for multicomponent spinor Bose-Einstein condensate (BEC). The Lagrangian is deduced from the multi-component BEC system formalism, and is written in terms of spin coherent states. From the effective Hamiltonian for the collective spin, the tunneling rate is obtained through a functional integral of the spin variable. It is pointed out that the cooperative effect between the Zeeman energy and the anisotropic nature of the spin-dependent inter-atomic interaction plays a key role for occurrence of collective spin tunneling.     

Spinwellen in Ferromagneten mit indirektem Austausch

We consider a lattice of localized, ferromagnetically ordered spins, exchange-inter-acting with a simple conduction band and give a unified theory of the elementary spin excitations. Spinwaves of the Heisenberg-model type and collective spinwaves, characteristic of a Fermigas with repulsive interactions, are coupled and give rise to an acoustical branch of predominantly localized and an optical branch of predominantly collective character which should appear in the infrared. In its most idealized version the model needs only three parameter: effective massm ?, interband exchange energy \(\tilde J\) and effective electron-electron repulsion \(\tilde v\) to describe this entire spectrum.     

Magnetic friction in Ising spin systems

A new contribution to friction is predicted to occur in systems with magnetic correlations: Tangential relative motion of two Ising spin systems pumps energy into the magnetic degrees of freedom. This leads to a friction force proportional to the area of contact. The velocity and temperature dependence of this force are investigated. Magnetic friction is strongest near the critical temperature, below which the spin systems order spontaneously. Antiferromagnetic coupling leads to stronger friction than ferromagnetic coupling with the same exchange constant. The basic dissipation mechanism is explained. A surprising effect is observed in the ferromagnetically ordered phase: The relative motion can act like a heat pump cooling the spins in the vicinity of the friction surface.     

对称双势垒量子阱中自旋极化输运的时间特性

电子的隧穿时间是描述量子器件动态工作范围的重要指标. 本文考虑k³ Dresselhaus 自旋轨道耦合效应对系统哈密顿量的修正, 结合转移矩阵方法和龙格-库塔法来解含时薛定谔方程, 进而讨论了电子在非磁半导体对称双势垒结构中的透射系数及隧穿寿命等问题. 研究结果发现:由于k³ Dresselhaus 自旋轨道耦合效应使自旋简并消除, 并在时间域内得到了表达, 导致自旋向上和自旋向下电子的透射峰发生了自旋劈裂; 不同自旋取向的电子构建时间和隧穿寿命不同, 这是导致自旋极化的原因之一; 电子的自旋极化在时间上趋于稳定. 关键词： 自旋极化输运 透射系数 隧穿寿命 自旋极化率     

Controllable spin transport in dual-gated silicene

Based on the dual-gated silicene, we have evaluated theoretically the spin-dependent transport in lateral resonant tunneling structure. By aligning the completely valley-polarized beam with spin-resolved well state in concerned structure, large spin polarization can be expected owing to spin-dependent resonant tunneling mechanism. Under the gate electric field modulation, the forming quantum well state can be externally manipulated, triggering further the emergence of externally-controllable spin polarization. Importantly, integrating the considered structure with a proper valley-filter, which might be constructed from valley-contrasting physics as that in graphene valleytronics, completely-polarized spin beam can also be attained without the assistance of ferromagnetic component, providing thus some profitable strategies to develop nonmagnetic spintronic devices residing on silicene.     

Roles of nonequilibrium conduction electrons on the magnetization dynamics of ferromagnets

The mutual dependence of spin-dependent conduction and magnetization dynamics of ferromagnets provides the key mechanisms in various spin-dependent phenomena. We compute the response of the conduction electron spins in a spatial and time varying magnetization M(r,t) in the time-dependent semiclassical transport theory. We show that the induced nonequilibrium conduction spin density in turn generates four spin torques acting on the magnetization-with each torque playing a different role in magnetization dynamics. By comparing with recent theoretical models, we find that one of these torques which has not been previously identified is crucial to consistently interpreting experimental data on domain wall motion.     

The exchange interaction effect in the scanning tunneling spectroscopy of a two-orbital Anderson impurity on metallic surface

We investigate the scanning tunneling spectroscopy (STS) of a two-orbital Anderson impurity adsorbed on a metallic surface by using the numerical renormalization group (NRG) method. The density of state of magnetic impurity and the local conduction electron are calculated. We obtain the Fano resonance line shape in the STM conductance at zero temperature. For the impurity atom with antiferromagnetic inter-orbital exchange interaction and a spin singlet ground state, we show that a dip in the STM spectra around zero bias voltage regime and side peaks of spin excitation can be observed. The spin excitation energy is proportional to the exchange interaction strength. As the exchange interaction is ferromagnetic, the underscreened Kondo effect dominates the low energy properties of this system, and it gives rise to drastically different STM spectra as compared with the spin singlet case.     

Magnons coherent transmission and heat transport at ultrathin insulating ferromagnetic nanojunctions

A model calculation is presented for the magnons coherent transmission and corresponding heat transport at insulating magnetic nanojunctions. The system consists of a ferromagnetically ordered ultrathin insulating junction between two semi-infinite ferromagnetically ordered leads with ideally flat crystal interfaces. The ground state of the system is depicted by an exchange Hamiltonian neglecting smaller dipolar and anisotropy terms. The spin dynamics are analyzed using the equations of motion for the spin precession displacements, valid in the limit of low temperatures compared to an order-disorder transition temperature characteristic of the system. The coherent transmission and reflection spectra at the nanojunction boundary are calculated in the Landauer-Buttiker formalism using the matching theory, for all the magnons in the lead bulk, at arbitrary angles of incidence on the boundary, and for variable temperatures. The model calculations yield the thermal conductivity κ _m due to the magnons coherent transmission between the two leads maintained at slightly different temperatures. The model is general, and is applied in particular to the Fe/Gd/Fe system to calculate the coherent transmission of magnons and their thermal conductivity at the junction boundary, for different thicknesses of the Gd junction and its corresponding magnetic order. The calculated results elucidate the comparison between the heat transport from magnons with that in parallel channels from electrons and phonons, at the nanojunction boundary.     

Spin valve effect in a magnetic nanoelectromechanical shuttle

We study spin-dependent shuttle phenomena in a nanoelectromechanical single electron transistor (NEM-SET) with magnetic leads by considering the coupling between the transport of spin-polarized electrons and mechanical oscillations of the nanometer quantum dot. It is shown that there are two different bias-voltage thresholds for the shuttle instability in electronic transport through the NEM-SET, respectively, corresponding to parallel (P) and antiparallel (AP) magnetization alignments. In between the two thresholds, the electronic transport is in the shuttling regime for the P alignment but in the tunneling regime for the AP one, resulting in a very large spin valve effect.