Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping(below 30 K) and nearest-neighbor hopping(above 30 K).The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source–drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K.     

Shot-noise signatures of 0.7 structure and spin in a quantum point contact

We report simultaneous measurement of shot noise and dc transport in a quantum point contact as a function of source-drain bias, gate voltage, and in-plane magnetic field. Shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement.     

准弹道输运纳米MOSFET散粒噪声的抑制研究

目前研究准弹道输运纳米MOSFET散粒噪声的抑制时, 采取了完全不考虑其抑制, 或只强调抑制的存在而并未给出抑制公式的方式进行研究. 本文基于Navid模型推导了准弹道输运纳米MOSFET散粒噪声, 并得到了其在费米作用、库仑作用和二者共同作用三种情形下的抑制因子. 在此基础上, 对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究. 两者共同作用的抑制因子随源漏电压和栅极电压变化特性与文献中给出的实验结论相符合, 从而对实验上得到两者共同作用下的抑制因子随源漏电压和栅极电压的变化特性给出了理论解释.     

Weber blockade theory of magnetoresistance oscillations in superconducting strips

Recent experiments on the conductance of thin, narrow superconducting strips have found periodic fluctuations, as a function of the perpendicular magnetic field, with a period corresponding to approximately two flux quanta per strip area [A. Johansson et al., Phys. Rev. Lett. 95, 116805 (2005)]. We argue that the low-energy degrees of freedom responsible for dissipation correspond to vortex motion. Using vortex-charge duality, we show that the superconducting strip behaves as the dual of a quantum dot, with the vortices, magnetic field, and bias current respectively playing the roles of the electrons, gate voltage, and source-drain voltage. In the bias-current versus magnetic-field plane, the strip conductance displays regions of small vortex conductance (i.e., small electrical resistance) that we term "Weber blockade" diamonds, which are dual to Coulomb blockade diamonds in quantum dots.     

Voltage-induced metal-insulator transition in polythiophene field-effect transistors

We have extensively studied the carrier transport in regio-regular polythiophene field-effect transistors (FETs) from room temperature to 4.2 K. At low temperatures, Zabrodskii plots (dlnsigma/dlnT) demonstrate that the gate voltage and source-drain voltage combine to induce the insulator-to-metal transition at a carrier density of 5x10(12) cm-2. The carrier transport in the insulating regime is well described by phonon assisted hopping in a disordered Fermi glass with Coulomb interaction between the hopping charge carrier and the opposite charge left behind, as described by Efros and Shklovskii.     

Individual,attractive defect centers in the SiO2-Si interface of μm-sized MOSFETs

In a micron-sized p-channel MOSFET, the alternate capture and emission of holes into a Coulomb-attractive defect center is analyzed by the random telegraph signal in the source-drain current. Anomalous switching is observed with a high channel conductance when the defect center is occupied, and a low channel conductance after re-emission. The rate constants show an inverse symmetry for capture and emission. The measured results are interpreted by a tunneling transfer of a hole bound in the channel at the attractive center to the defect center 2.4 nm deep in the oxide and vice versa. The energy offset of the two stable configurations can be linearly varied by the gate voltage. An excited state 40 meV above the ground state is observed for the defect level. The anomalous switching is caused by a mobility change rather than by a change in mobile charge carrier density. The tunneling transfer for Coulomb-attractive centers differs from the transfer observed for Coulomb-repulsive centers where activated emission is reported.     

Single-photon detection mechanism in a quantum dot transistor

We study the transport mechanisms in a quantum dot MODFET by tuning the localization induced by charge stored on the quantum dots with light. The temperature dependence of the resistivity of a macroscopic sample reveals a hopping transport when the dots contain an excess of electrons. The resistance of a mesoscopic sample however, which is capable of detecting single photons, exhibits a much weaker dependence upon temperature. This points towards source-drain tunnelling as a transport mechanism and is confirmed by a statistical analysis of the single-photon-induced conductance steps. The complexity of the conducting paths increases as the average hopping length reduces.     

Tunability of the Kondo effect in an asymmetrically tunnel coupled quantum dot

The transport properties of a single quantum dot were measured at low temperature in a regime of strong asymmetric tunnel coupling to leads. By tuning this asymmetry, the two parameters of the Kondo effect in a quantum dot, the Kondo temperature and the zero-bias zero-temperature conductance, were independently controlled. A careful analysis of the Coulomb energies and of the tunnel couplings was performed. It allowed an estimate of the Kondo temperature independently of its value obtained via the temperature dependence of the conductance. Both are in good agreement. We finally compared our experimental data with an exact solution of the Kondo problem which provides the dependence of the differential conductance on temperature and source-drain voltage. Theoretical expectations fit quite well our experimental data in the equilibrium and out-of-equilibrium regimes.     

Tunable noise cross correlations in a double quantum dot

We report measurements of the cross correlation between temporal current fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and source-drain bias. We find good agreement with the data by including an interdot Coulomb interaction in a sequential-tunneling model.     

Suppression of the unconventional metallic behavior by gate voltage in MWNT device

We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration, which allowed us to perform systematic inspection of the low-temperature transport properties against gate voltage. Power-law behaviors in temperature and bias-dependent conductance, disappeared when a high gate voltage was applied, and conductance became temperature- and bias independent. This indicates a gate-induced transformation from the unconventional to the normal metallic states in MWNT.     

Charge transfer from ammonia physisorbed on nanotubes

We report the use of nanotube field-effect transistor devices for chemical sensing in a conducting liquid environment. Detection of ammonia occurs through the shift of the gate voltage dependence of the source-drain current. We attribute this shift to charge transfer from adsorbed ammonia molecules, with the amount of charge estimated to be as small as 40 electrons for the smallest shift detected. Using the concentration dependence of the response as an adsorption isotherm, we are able to measure the amount of charge transfer to be 0.04 electron per ammonia molecule.     

Charge and spin currents tunnelling through a toroidal carbon nanotube side-coupled with a quantum dot

We have investigated the mesoscopic transport through the system with a quantum dot (QD) side-coupled to a toroidal carbon nanotube (TCN) in the presence of spin-flip effect. The coupled QD contributes to the mesoscopic transport significantly through adjusting the gate voltage and Zeeman field applied to the QD. The compound TCN-QD microstructure is related to the separate subsystems, the applied external magnetic fields, as well as the combination of subsystems. The spin current component I_z^s is independent on time, while the spin current components I_x^s and I_y^s evolve with time sinusoidally. The rotating magnetic field induces novel levels due to the spin splitting and photon absorption procedures. The suppression and enhancement of resonant peaks, and semiconductor-metal phase transition are observed by studying the differential conductance through tuning the source-drain bias and photon energy. The magnetic flux induces Aharonov-Bohm oscillation, and it controls the tunnelling behavior due to adjusting the flux. The Fano type of multi-resonant behaviors are displayed in the conductance structures by adjusting the gate voltage V_g and the Zeeman field applied to the QD.     

Out of equilibrium Anderson model: Conductance and Kondo temperature

We calculate the conductance through a quantum dot weakly coupled to metallic contacts by means of the Keldysh out of equilibrium formalism. We model the quantum dot with the SU(2) Anderson model and consider the limit of infinite Coulomb repulsion. The interacting system is solved with the numerical diagrammatic Non-Crossing Approximation (NCA) and the conductance is obtained as a function of temperature and gate voltage from differential conductance (dI/dV) curves. We discuss the results in comparison with those from the linear response approach which can be performed directly in equilibrium conditions. Comparison shows that out of equilibrium results are in good agreement with the ones from linear response supporting reliability of the method employed. The last discussion becomes relevant when dealing with general transport models through interacting regions. We also analyze the evolution of conductance vs gate voltage with temperature. While at high temperatures the conductance is peaked, when the Fermi energy coincides with the localized level it presents a plateau at low temperatures as a consequence of the Kondo effect. We discuss different ways to determine Kondo's temperature.     

Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted channel with corrugated interfaces

Transport properties of a novel quasi-ballistic quantum wire field-effect transistor are studied experimentally and then discussed in relation to a theory for dirty Tomonaga–Luttinger (T–L) liquids. The sample was prepared by constricting lithographically an epitaxially grown In_0.1Ga_0.9As/GaAs quantum well channel, whose bottom interface is corrugated by a quasi-periodic array of multi-atomic steps of 20 nm in periodicity. A quasi-one-dimensional channel of about 200 nm in metallurgical width and in length was formed and its conductance parallel to the steps was measured at temperatures between 4 and 0.3 K as a function of gate voltage. Plateau-like structures substantially lower than 2e²/h were observed. The conductance at each gate voltage decreases sensitively as temperature lowers until it gets nearly constant below a critical temperature. These tendencies are found to be qualitatively consistent with the theory of Ogata and Fukuyama for dirty T–L liquids. The temperature dependence above the critical temperature is found to fit quantitatively with the formula of Ogata and Fukuyama, if the parameters are suitably chosen.     

Fano versus Kondo resonances in a multilevel "semiopen" quantum dot

Linear conductance across a large quantum dot via a single level epsilon(0) with large hybridization to the contacts is strongly sensitive to quasibound states localized in the dot and weakly coupled to epsilon(0). The conductance oscillates with the gate voltage due to interference of the Fano type. At low temperature and Coulomb blockade, Kondo correlations damp the oscillations on an extended range of gate voltage values, by freezing the occupancy of the epsilon(0) level itself. As a consequence, the antiresonances of Fano origin are washed out. The results are in good correspondence with experimental data for a large quantum dot in the semiopen regime.     

Nonlinear conductance of long quantum wires at a conductance plateau transition: where does the voltage drop?

We calculate the linear and nonlinear conductance of spinless fermions in clean, long quantum wires, where short-ranged interactions lead locally to equilibration. Close to the quantum phase transition, where the conductance jumps from zero to one conductance quantum, the conductance obtains a universal form governed by the ratios of temperature, bias voltage, and gate voltage. Asymptotic analytic results are compared to solutions of a Boltzmann equation which includes the effects of three-particle scattering. Surprisingly, we find that for long wires the voltage predominantly drops close to one end of the quantum wire due to a thermoelectric effect.     

太赫兹互补金属氧化物半导体场效应管探测器理论模型中扩散效应研究

针对基于经典动力学理论传统模型中忽略扩散效应的问题,通过对基于玻尔兹曼理论的场效应管传输线模型的理论分析,建立了包含扩散效应的太赫兹互补金属氧化物半导体(CMOS)场效应管探测器理论模型,研究扩散效应对场效应管电导及响应度的影响.同时,将此模型与忽略了扩散效应的传统模型进行了对比仿真模拟,给出了两种模型下的电流响应度随温度及频率变化的差别.依据仿真结果,并结合3σ原则明确了场效应管传输线模型中扩散部分省略的依据和条件.研究结果表明:扩散部分引起的响应度差异大小主要由场效应管的工作温度及工作频率决定.其中工作频率起主要作用,温度变化对差异大小影响较为微弱;而对于工作频率而言,当场效应管工作频率小于1 THz时,模型中的扩散部分可以忽略不计;而当工作频率大于1 THz时,扩散部分不可省略,此时场效应管模型需同时包含漂移、散射及扩散三个物理过程.本文的研究结果为太赫兹CMOS场效应管理论模型的精确建立及模拟提供了理论支持.     

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

The effect of high overdrive voltage on the positive bias temperature instability(PBTI)trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT)with LPCVD-SiNx gate dielectric.A higher overdrive voltage is more effective to accelerate the electrons trapping process,resulting in a unique trapping behavior,i.e.,a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence.Combining the degradation of electrical parameters with the frequency–conductance measurements,the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time,new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.     

Electronic transport in fullerene C20 bridge assisted by molecular vibrations

The effect of molecular vibrations on electronic transport is investigated with the smallest fullerene C20 bridge, utilizing the Keldysh nonequilibrium Green's function techniques combined with the tight-binding molecular-dynamics method. Large discontinuous steps appear in the differential conductance when the applied bias voltage matches particular vibrational energies. The magnitude of the step is found to vary considerably with the vibrational mode and to depend on the local electronic states besides the strength of electron-vibration coupling. On the basis of this finding, a novel way to control the molecular motion by adjusting the gate voltage is proposed.     

Quantum interference effect in few-layered transition metal dichalcogenide

Van der Waals layered transition metal dichalcogenides (TMDCs), as atomically flat two-dimensional materials, have been studied extensively in both fundamental science and application fields in recent years. The reduced-dimensional properties of TMDCs not only provide a route for the fabricating of efficient field effect transistors and optoelectronic devices but also suggest the possibility of the devices that utilize quantum coherency. In this work, we characterize the electron transport properties of ReS₂, one of the TMDCs, at both room temperature and low temperature. Of particular note, we measured strong quantum conductance oscillations as a function of the gate voltages and source-drain voltages at reduced temperature, which is evidence of quantum coherent transport. This work unambiguously establishes ReS₂ as a promising candidate for future quantum materials.