掺铒氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiOx:H),离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和1.76时,分别对应77K和室温测量时最强的1.54μm光致发光.从15到250K的变温实验显示出三个不同的强度与温度变化关系,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区,并对实验现象进行了解释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250K,光致发光强度减弱约1/2.     

掺饵氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiO_{x∶H),离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和 1.76时,分别对应77Ｋ和室温测量时最强的1.54μm光致发光.从15到250Ｋ的变温实验显示 出三个不同的强度与温度变化关系,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个 复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区,并对实验现象进行了解 释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250Ｋ,光致发光强度减弱约1/2. 关键词： 铒 光致发光 氧含量}     

飞秒激光中高能质子的产生与加速的研究

为了探索飞秒激光与固体靶相互作用中高能质子的产生和加速机制,在超短超强激光装置“SILEX-I”上进行了飞秒激光与平面固体薄膜Cu靶的相互作用中高能质子空间分布、能谱和产额的实验研究。实验采用固体核径迹探测器CR39和Thomson离子谱仪相结合的方式,在固体靶背表面法线方向测量了质子空间分布、能谱和产额。实验结果表明：质子沿着靶背法线方向发射,质子空间分布呈圆环状,存在一定的立体角;质子在一定能量处出现截断;截断能量的大小与靶厚度有关。经分析,高能离子的产生和加速是多种作用机制共同作用的结果,其中静电场中的TNSA加速机制则占主导地位。     

飞秒激光中高能质子的产生与加速的研究

为了探索飞秒激光与固体靶相互作用中高能质子的产生和加速机制,在超短超强激光装置“SILEX-I”上进行了飞秒激光与平面固体薄膜Cu靶的相互作用中高能质子空间分布、能谱和产额的实验研究。实验采用固体核径迹探测器CR39和Thomson离子谱仪相结合的方式,在固体靶背表面法线方向测量了质子空间分布、能谱和产额。实验结果表明：质子沿着靶背法线方向发射,质子空间分布呈圆环状,存在一定的立体角;质子在一定能量处出现截断;截断能量的大小与靶厚度有关。经分析,高能离子的产生和加速是多种作用机制共同作用的结果,其中静电场中的TNSA加速机制则占主导地位。     

神光Ⅱ升级装置激光加速质子照相初步实验研究

在神光Ⅱ升级装置上开展了首轮激光加速质子对间接驱动快点火靶内爆过程的照相实验研究。通过激光与靶参数的优化,获得了能量高于18 MeV的质子束。通过静态客体的照相,获得了优于20 m的高空间分辨网格图像,为开展时间分辨的啁啾质子照相奠定了基础。开展了质子动态照相实验,获得了内爆压缩晚期的质子照相图像。实验发现内爆区域质子照相图像存在大量排空现象。内爆压缩区域不足以阻挡如此大范围质子束,证明了其中存在电磁场使得质子向外排开。动态照相的质子能量较低,分析是ns激光打靶过程产生的X射线及等离子体对质子加速存在影响。后续实验中需要进一步优化靶的屏蔽设计。     

高能质子单粒子翻转效应的模拟计算

在分析质子与硅反应的基础上,提出质子单粒子翻转截面理论计算模型,建立了模拟计算方法.计算得到了不同能量的高能质子在存储单元的灵敏区内沉积的能量.指出高能质子主要通过与硅反应产生的重离子在存储单元灵敏区内沉积能量,产生电荷,导致单粒子效应,得到了单粒子翻转截面与质子能量以及随临界电荷变化的关系.并将计算得到的单粒子翻转截面与实验数据进行了比较.     

氧、硼、磷掺杂对氢化非晶硅中铒1.54μm发光的作用

利用等离子体增强化学气相淀积(PECVD)技术生长氧、硼、磷掺杂的氢化非晶硅薄膜.在室温下注入铒离子后研究三种掺杂元素对铒离子发光的作用.室温下观察到很强的光致发光现象.氧的引入并且和铒离子形成发光中心,提高了铒离子的发光强度.退火实验表明氧、硼、磷的掺杂补偿了材料中的缺陷,提高了氢的逃逸温度,改善材料的热稳定性,使材料的退火温度因掺杂元素的加入而提高,铒的发光得到增强.讨论了铒离子的发光机制.     

基于带电粒子活化法开展的SGⅡ-U皮秒激光质子加速实验研究

基于带电粒子活化测谱方法在SGⅡ-U装置上开展了皮秒激光靶背鞘场机制质子加速实验研究,对靶参数进行了优化.利用带电粒子活化测谱方法测量了相同激光条件、不同Cu薄膜靶厚度情况下靶背鞘场加速质子的最高截止能量、角分布、总产额以及激光能量到质子的转化效率等关键参数.实验发现,SGⅡ-U皮秒激光靶背鞘场加速机制的最佳Cu薄膜靶厚度为10 μm,对应质子最高能量接近40 MeV,质子（>4 MeV）总产额约4×10¹²个,激光能量到质子的转化效率约2%.薄膜靶更厚或者更薄都会降低加速质子的最高截止能量;当靶厚减薄至1 μm时,皮秒激光的预脉冲开始对靶背鞘场产生显著影响,质子最高截止能量急剧下降,高能质子束斑呈现空心结构;而当靶厚增加至35 μm时,虽然质子束的能量有所降低,但是质子束斑的均匀性更好.     

高能γ谱仪

联合原子核研究所100亿电子伏同步稳相加速器,除产生高能质子束、π介子束和K介子束外,还产生高能γ量子束。它们主要是高能质子与内靶原子核作用时产生的π°介子的衰变产物。在实验室坐标系中,在和加速质子方向成0°角的方向上,从内靶上飞出的γ量子的最大能量达到几十亿电子伏。测量这些γ量子的角分布和能谱就可以了解高能核子—核子碰撞产生π°介子的机构。为了准备进行这类物理实验,我们安装了一台     

超短激光与金薄膜靶相互作用产生的质子能谱

在能量11 mJ、波长744 nm、脉宽120 fs、功率密度61016 W/cm2的超短脉冲装置上,开展了超短脉冲激光与2.1 m和5.0 m金薄膜靶相互作用产生质子束的实验研究。利用Thomson谱仪测量了产生的质子能谱,发现利用2.1 m金薄膜靶时,质子能谱由于质子源数量不足而在74 keV附近出现单能峰,5.0 m的金薄膜靶产生的质子计数和能谱均比2.1 m的金薄膜靶产生的低,主要原因是超热电子穿过薄膜靶时出现的能量损失和几何倾斜降低了电子回流所致。     

Growth and hydrogenation of ultra-thin Mg films on Mo(1 1 1)

The growth and hydrogenation of ultra-thin magnesium overlayers have been investigated on a Mo(1 1 1) single crystal substrate. For increasing magnesium coverages we observe intermediate stages in the TPD and LEISS profiles, which illustrate the transition from one monolayer to multilayer growth. Hydrogen cannot be adsorbed on magnesium films under UHV conditions. However, when evaporating Mg in a hydrogen background, a hydrogen overlayer is seen to adsorb at the Mg surface, due to the catalytic interaction with the Mo(1 1 1) substrate and subsequent spill-over. We show that two monolayers of Mg are necessary to sustain this purely adsorbed state. Using predissociated hydrogen we show that the hydride formation is self-stabilizing and the hydride only decomposes at a temperature where a considerable desorption of magnesium occurs.     

Structure transformations and hydrogen storage properties of co-sputtered MgNi films

The quantity of accommodated and distribution profiles of hydrogen in 1.5-μm thick co-sputtered MgNi films after uptake of hydrogen at 800 kPa pressure within the temperature range 200-250 °C during 1 h, 3 h, 6 h and 72 h are measured. The occurring phase changes are followed by X-ray diffraction measurements at room temperature. We conclude that the hydrogenation process involves two stages: (i) the fast nucleation of the initial Mg₂NiH₄ layer near the substrate interface and (ii) the slow random nucleation of the same phase within the remaining part of the film. The growth of the initial hydride layer may be blocked by the surface oxide barrier layer formed during hydrogenation. We find that hydrogen-induced structural transformations are correlated with oxygen contamination and modify hydrogen storage properties.     

Kinetics of Hydrogenation and Variations in Resistance of Vanadium Thin Films Treated in Atomic Hydrogen Flow

Methods of nuclear reactions, x-ray diffraction analysis, transmission electron and nuclear microscopy were used to investigate the mechanism of hydrogenation of thin vanadium films in their treatment in a flow consisting of a mixture of molecular and atomic hydrogen. It has been shown that the main component penetrating into the metal from the gas phase is atomic hydrogen. At a gas pressure of 10^–2 Pa and room temperature, the dissolution of particles which, in the gas phase, are in molecular form, occurs at a much lower rate. It has been established that the (initially high) rate of variation of the hydrogen concentration in the film decreases during hydrogenation and gradually approaches zero. As this takes place, the hydrogen concentration in vanadium reaches its limiting value equal to about 42.5 at. %. A mathematical model of the hydrogenation of a vanadium film is proposed which describes experimental results based on the relaxation dependence of the hydrogen concentration on hydrogenation time. Comparative analysis of the variations in hydrogen concentration in a film and in film resistance is performed. It has been established that the dependence of the resistance on hydrogen concentration for a thin film hydrogenated in a flow of atomic hydrogen differs from the similar dependence for a bulk material hydrogenated in the atmosphere of molecular hydrogen under the conditions of thermodynamic equilibrium. The features of the behavior of the resistance of a thin film on hydrogenation time revealed experimentally are caused, as in the case of a bulk material, by the formation of the phase of vanadium hydride in the film. The possibility of using vanadium thin films for measuring absolute values of the atomic hydrogen flow density is discussed.     

Hydrogenation of Pd-capped Mg thin films prepared by DC magnetron sputtering

Structural and optical properties of pure Mg thin film coated with Pd have been investigated. Pd-capped Mg thin films had been prepared by DC magnetron sputtering. This work presents an ex situ study on hydrogenation and dehydrogenation kinetics of Pd/Mg films at different conditions using XRD, AFM and optical spectrophotometer. We have succeeded to load thin films of Mg to MgH₂ at normal temperature and normal pressure of hydrogen gas. In hydrogenation, α-MgH₂ phase of magnesium hydride was observed in hydrogenated films at 200 °C and γ-MgH₂ at 250 °C respectively. The desorption kinetics in vacuum also revealed the phase transformation α-MgH₂ to γ-MgH₂. A reflectance change was observed in hydrogenated films in comparison of as deposited thin film. Hydrogenated (H loaded) samples were observed partially transparent in comparison of as deposited.     

Light-induced metal-insulator transition in a switchable mirror

Rare earth hydride films can be converted reversibly from metallic mirrors to insulating windows simply by changing the surrounding hydrogen gas pressure at room temperature. At low temperatures, in situ doping is not possible in this way as hydrogen cannot diffuse. However, our finding of persistent photoconductivity under ultraviolet illumination offers an attractive possibility to tune yttrium hydride through the T = 0 metal-insulator transition. Conductivity and Hall measurements are used to determine critical exponents. The unusually large value for the product of the static and dynamical critical exponents appears to signify the important role played by electron-electron interactions.     

Hydrogenation properties of catalyzed and non-catalyzed magnesium films

The hydrogenation properties of 400 Å thick magnesium films, grown under ultra-high vacuum conditions, have been studied under conditions relevant for hydrogen storage, i.e., elevated temperatures and pressures. The hydrogen uptake of films modified by deposition of platinum on the magnesium surface was also investigated. A realistic hydrogen storage system is modeled by studying the combined effect on hydrogen sorption by a platinum catalyst and magnesium oxide, the latter a common impurity in magnesium-based hydrogen storage systems. Magnesium and platinum are found to inter-diffuse readily at room temperature. However, a partially oxidized magnesium layer stabilizes platinum on the surface, while still being permeable to hydrogen.     

Decomposition of lithium amide and imide films on nickel

Thin films of lithium hydride, lithium amide and lithium imide were grown from lithium and ammonia under controlled conditions in an ultra high vacuum chamber. By making thin films instead of bulk or powder samples, it was possible to study the stability and the release of hydrogen without influence of transport phenomena. Surprisingly, lithium amide and lithium imide were seen to decompose at higher temperatures than lithium hydride. Furthermore, it was seen that hydrogen reversibly could be removed by heat treatment and subsequently refilled.     

Fabrication processing effects on the microstructure and morphology of erbium film

The effect of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200°C have (002) preferred orientation, and the films deposited at 450°C have a mixed (100) and (101) texture, due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of the substrate-film couple.     

Fabrication processing effects on microstructure and morphology of erbium film

The effects of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by the electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200 ℃ have (002) preferred orientation, and the films deposited at 450 ℃ have mixed (100) and (101) texture, which are due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with the increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling down to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of substrate--film couple.     

A high-resolution core-level study of Ni-catalyzed absorption and desorption of hydrogen in Mg-films

Ultra-thin magnesium and magnesium-nickel films grown on Mo(1 1 0) under ultra-high vacuum (UHV) conditions are hydrogenated at room temperature with atomic H and studied by high-resolution core-level photoelectron spectroscopy (PES). For the Mg-film a layer of hydride is formed at the Mg/Mo interface and a sub-mono layer of hydride is formed at the surface, while an intermediate region remained non-hydrogenated. For the Mg-Ni-film a thick layer of surface hydride was detected, showing that Ni enhances formation of Mg-hydride at the surface. During the heat-up of the hydrogenated Mg-Ni-film hydrogen desorption started at 400 K.