HfO2顶层多层介质膜脉宽压缩光栅的Piranha溶液清洗

为了提高HfO2顶层多层介质膜脉宽压缩光栅（PCG）的抗激光损伤性能,使用Piranha溶液（浓硫酸和双氧水的混合液）清洗PCG去除其制作工艺和使用过程中残留在表面的污染物,包括CHF3作为工作气体对HfO2进行反应离子束刻蚀生成的碳氟化合物及金属氟化物。对Piranha溶液的清洗温度、组成成分、清洗时间、清洗遍数等参数进行了系统研究,用扫描电子显微镜（SEM）观察清洗前后的PCG表面形貌,用X射线光电子能谱仪（XPS）检测清洗前后PCG表面的元素成分及其原子分数的变化,并分析了各残留污染物的去除机理。实验结果表明：Piranha溶液能有效去除PCG表面污染物,而且清洗温度越高,清洗遍数越多,对PCG表面残留污染物的去除效果越显著。在90 ℃下60 min有效活性时间内,使用浓硫酸和双氧水体积比为2∶1的Piranha溶液清洗3遍以上,PCG表面残留的F元素的原子分数接近0.1%（XPS的分辨极限）,达到良好的清洗效果。     

飞秒激光用多层介质膜脉宽压缩光栅的设计

以薄膜光学的干涉理论和衍射光学的傅里叶模式理论为基础，给出了0.8μm飞秒激光器用多层介质膜脉宽压缩光栅的理论设计；设计采用H3L(HL)^9H0.5L2.4H的多层介质膜为基底，当刻蚀后表面浮雕结构的占宽比为0.35，线密度为1480线/mm，槽深为0.2μm，顶层HfO₂的剩余厚度为0.15μm时，对于Littrow角度(36.7°)和TE波模式入射的衍射光栅其-1级衍射效率达到95％以上. 关键词： 飞秒激光 脉宽压缩光栅 多层介质膜     

提高多层介质膜脉宽压缩光栅阈值的清洗方法

采用HPM溶液（盐酸、双氧水和去离子水的混合液）结合氧等离子体对多层介质膜脉宽压缩光栅进行清洗研究。用X射线光电子能谱检测光栅表面的元素成分及其原子含量的变化。实验结果表明,氧等离子体处理能有效去除光栅表面残留光刻胶和碳氟化合物; 再经HPM溶液清洗,反应离子束刻蚀和氧等离子体处理过程产生的金属污染物被进一步去除。经过上述清洗工艺处理后,光栅一级衍射效率仍保持在95%以上,光栅表面激光诱导损伤阈值达到1.6 J/cm2 (1053 nm, 10 ps)。实验结果说明了氧等离子体和HPM溶液相结合能有效清洗多层介质膜脉宽压缩光栅,并显著提高光栅损伤阈值。     

HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀

多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求,首先利用考夫曼型离子束刻蚀机开展了HfO₂顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF₃混合气体作为工作气体进行离子束刻蚀实验,获得了优化的离子源工作参数. 结果表明,与纯Ar离子束刻蚀相比,Ar和CHF₃混合气体离子束刻蚀时的HfO₂/光刻胶的选择比大. HfO₂的离子束刻蚀过程中再沉积效应明显,导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性,及时清洗离子源和更换灯丝,可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO₂顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致,为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考. 关键词： 光栅 多层介质膜 离子束刻蚀     

多层介质膜脉宽压缩光栅的严格矢量分析

用于展宽和压缩激光脉冲的多层膜脉宽压缩光栅是由多层介质高反膜和位于其顶层的浮雕光栅构成。以设计的高反射多层膜为基础,利用傅里叶模式理论分析了其衍射场分布,给出了TE波自准直角入射的使用条件下,多层介质膜脉宽压缩光栅衍射效率的表达式。以-1级衍射效率为评价函数,分别讨论了HfO2和SiO2为顶层材料时,多层膜脉宽压缩光栅-1级衍射效率高于0.95的光栅结构参量范围。结果表明,在该条件下,选择HfO2为顶层材料时,光栅结构参量有较大的取值范围。给出了优化的光栅结构参量,并分析了光栅制作误差及其使用条件的宽容度,对光栅制作工艺和使用具有一定的指导意义。     

脉宽压缩光栅用的多层膜设计和性能分析

应用于啁啾脉冲放大技术中的脉宽压缩光栅是基于多层膜作为基底,利用全息干涉技术和离子束技术刻蚀而成。脉宽压缩光栅的衍射效率和抗激光损伤阈值一方面依赖于光栅结构的设计,另一方面很大程度上取决于作为基底的多层膜的设计。给出了以413.1nm作为写入波长,1053nm作为使用波长的多层介质光栅膜的设计,样品在ZZS-800F型真空镀膜机上采用电子束蒸发方式沉积而成,并给出了膜系结构对光学性能影响因素的详细分析,结果表明膜系H3L(H2L)9H0.5L2.03H满足光栅膜的指标。给出了样品光学特性测试,其使用波长处的透射率<0.5%,写入波长处的透射率>90%,测试表明样品满足设计要求且实验结果和理论设计符合得很好。     

软X射线多层膜及多层膜光栅的研究进展

对目前的几种软Ｘ射线光学元件的性能作了简要的阐述和分析。综合介绍了多层膜作为软Ｘ射线光学元件的新进展。同时对多层膜光栅这种新型软Ｘ射线光学元件的原理、性能、制作工艺进行了详细的说明。     

多层膜闪耀光栅衍射的运动学研究

用 X射线运动学理论对软 X射线多层膜闪耀光栅的衍射特性进行了详细的研究 ,得到了衍射规律的一般表达式 ,讨论了产生衍射极大值的条件、光谱特性 ,不同于光栅和多层膜的色散特性。以及用作软 X射线单色器的一般性问题。发现只要选择合适的光栅参数 ,便可以将衍射光的大部分能量集中到某一个非零衍射级上。     

脉宽压缩光栅用多层膜制备和性能测试

给出了以413 nm作为写入波长,1053 nm作为使用波长的多层介质光栅膜的设计,计算表明膜系H3L(H2L)^9H0.5L2.03H满足光栅膜的要求.最后给出了制备得到的样品光学特性测试,结果表明在使用波长和曝光波长处满足设计要求,其抗激光损伤阈值在光正入射和51.2°入射时分别为14.14 J/cm2和9.32 J/cm2,膜系的应力表现为压应力.     

软X射线多层膜光栅的衍射特性

用X射线运动学理论对软X射线多层膜光栅的衍射特性进行了研究。发现其衍射规律与多层膜的布拉格衍射和普通光栅衍射有本质的区别,可将衍射能量集中于某一衍射级上,同时它又保持了多层膜的高反射率和光栅的高分辨本领等优良特性。     

Design and properties analysis of multi-layer dielectric used in pulse compressor gratings

Used in chirped-pulse amplification system and based on multi-layer thin film stack, pulse compressor gratings (PCG) are etched by ion-beam and holographic techniques. Diffraction efficiency and laser-induced damage threshold rely on the structural parameters of gratings. On the other hand, they depend greatly on the design of multi-layer. A theoretic design is given for dielectric multi-layer, which is exposed at 413.1 nm and used at 1053 nm. The influences of coating design on optical characters are described in detail. The analysis shows that a coating stack of H3L (H2L)9H0.5L2.01H meets the specifications of PCG well. And there is good agreement of transmission between experimental and the theoretic design.     

Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

N-type 4H-SiC (0 0 0 1) surfaces were cleaned by low temperature hydrogen plasma in electronic cyclotron resonance (ECR) microware plasma system. The effects of the hydrogen plasma treatment (HPT) on the structure, chemical and electronic properties of surfaces were characterized by in situ reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). The RHEED results indicate that the structures of the films are strongly dependent on the treatment temperature and time. Significant improvements in quality of 4H-SiC films can be obtained with the temperature ranging from 200 °C to 700 °C for an appropriate treatment period. The XPS results show that the surface oxygen is greatly reduced and the carbon contamination is completely removed from the 4H-SiC surfaces. The hydrogenated SiC surfaces exhibit an unprecedented stability against oxidation in the air. The surface Fermi level moves toward the conduction band in 4H-SiC after the treatment indicating an unpinning Fermi level with the density of surfaces states as low as 8.09 × 10¹⁰ cm⁻² eV⁻¹.     

Formation of 10-30 nm SiO2/Si structure with a uniform thickness at ∼120 °C by nitric acid oxidation method

Silicon dioxide (SiO₂) layers with a thickness more than 10 nm can be formed at ∼120 °C by direct Si oxidation with nitric acid (HNO₃). Si is initially immersed in 40 wt.% HNO₃ at the boiling temperature of 108 °C, which forms a ∼1 nm SiO₂ layer, and the immersion is continued after reaching the azeotropic point (i.e., 68 wt.% HNO₃ at 121 °C), resulting in an increase in the SiO₂ thickness. The nitric acid oxidation rates are the same for (1 1 1) and (1 0 0) orientations, and n-type and p-type Si wafers. The oxidation rate is constant at least up to 15 nm SiO₂ thickness (i.e., 1.5 nm/h for single crystalline Si and 3.4 nm/h for polycrystalline Si (poly-Si)), indicating that the interfacial reaction is the rate-determining step. SiO₂ layers with a uniform thickness are formed even on a rough surface of poly-Si thin film.     

Effect of complexing agent on the properties of electrochemically deposited Cu2ZnSnS4 (CZTS) thin films

The Cu₂ZnSnS₄ (CZTS) thin films have been electrochemically deposited on Mo-coated glass substrate from weak acidic medium (pH 4.5-5) at room temperature. The effect of complexing agent (tri-sodium citrate) on the structural, morphological and compositional properties of CZTS thin films has been investigated. The as-deposited and annealed thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM),EDAX and X-ray photoelectron spectroscopy (XPS) techniques for their structural, morphological, compositional and chemical properties, respectively. XRD studies reveal that the amorphous nature of as-deposited thin film changes into polycrystalline with kesterite crystal structure after annealing in Ar atmosphere. The film prepared without complexing agent showed well-covered surface morphology on the substrate with some cracks on the surface of the film whereas those prepared using complexing agent, exhibited uneven and slightly porous and some overgrown particles on the surface of the films. After annealing, morphology changes into the flat grains, uniformly distributed over the entire surface of the substrate. The EDAX and XPS study reveals that the films deposited using 0.2 M tri-sodium citrate are nearly stoichiometric.