Magnetic properties of single crystalline Zn1−xCoxO thin films

We report on the magnetic properties of single crystalline thin films of Zn_1−xCo_xO (x=0.003–0.14) grown by plasma-assisted molecular beam epitaxy. In order to understand the role of intermediate charge carriers in the magnetic properties of this material two types of films were fabricated, with and without Ga-codoping. Magnetic measurements were made between 2 and 300 K in fields up to 5 T with a Quantum Design SQUID magnetometer. We found that all the tested films exhibit paramagnetic behavior following the Curie–Weiss law, χ=C/(T−θ), with negative Curie–Weiss temperatures and that this behavior holds even under strong n-doping. We show that the magnetization data, M(H), in function of the Co content provide additional evidence in favor of the antiferromagnetic Co–Co interaction in this material. We also observe that these data exhibit an ‘easy plane’ magnetic anisotropy for all the studied Co concentrations. Finally, we develop a simple cluster model, in order to describe the magnetic properties of ZnCoO, which is found to be in good agreement with our experiments.     

Tetrahedral versus octahedral Mn site coordination in wurtzite and rocksalt Zn1−xMnxO investigated by means of XAS experiments under high pressure

We present the results of x-ray absorption measurements carried out in Zn_1−xMn_xO thin films under high pressure. The Mn environment remains essentially the same for nominal Mn concentrations given by x=0.05, 0.1, 0.15 and 0.25. Both the XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine Structure) indicate that Mn occupies the Zn site, being surrounded by four oxygen atoms at 2.02±0.01 Å. The substitutional hypothesis is reinforced by comparing the differences between the ambient (wurtzite) and high pressure (rocksalt) spectra, which correspond to tetrahedral and octahedral Mn environments.     

Optical-field profiles in InxGa1−xN -MQW laser structures

In this paper, we calculated the optical fields for In_xGa_1−xN-multiquantum well (MQW) laser structures. Two different optical cavities are compared, the conventional step separate confinement heterostructure (Step) and a graded-index (GRIN) structure with a parabolic variation of the Al content in the Al_xGa_1−xN guide layers. A comparison is made regarding the confinement factor, near- and far-field patterns. An anomalous behavior for the confinement factor is observed in the structure, and it can be eliminated by choosing an appropriated combination of the layer’s thicknesses forming the waveguide. For Al_xGa_1−xN, an improved expression for the refractive index is presented, which shows better agreement with experimental data than previously reported expressions.     

Optical band gap and optical constants in a-Se80Te20−xPbx thin films

The optical constants (absorption coefficient, refractive index, extention coefficient, real and imaginary part of dielectric constant) have been studied for a-Se₈₀Te_20−xPb_x (where x = 0, 2, 6, 10) thin films as a function of photon energy in the wave length range (500–1000 nm). It has been found that the optical band gap increases while the refractive index and the extinction coefficient (k) decreases on incorporation of lead in Se–Te system. The value of absorption coefficient (α) and the extinction coefficient (k) increases, while the value of refractive index (n) decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level.     

Zn1−xMnxO : A typical member of the II-VI:Mn DMS family

ZnO:Mn thin films are grown by MOCVD technique. Mn(x) varies in 0<x<0.44 range. Vegrad’s law has been verified for the lattice parameters. EPR measurements prove the substitution incorporation of Mn²⁺ on zinc sites. The behavior of EPR line-width regarding temperature is discussed. All ZnO:Mn layers show antiferromagnetic interaction and a effective exchange constant. Observation of excitons, giant Zeeman effect, and trace of the Brillouin function is evidence for high quality of the crystal lattice and of substitutional incorporation of manganese ions in place of Zn, as Mn²⁺.     

A spectroscopic ellipsometric investigation of new critical points of Zn1−xMnxS epilayers

Zn_1−xMn_xS epilayers were grown on GaAs (1 0 0) substrates by hot-wall epitaxy. X-ray diffraction (XRD) patterns revealed that all the epilayers have a zincblende structure. The optical properties were investigated using spectroscopic ellipsometry at 300 K from 3.0 to 8.5 eV. The obtained data were analyzed for determining the critical points of pseudodielectric function spectra, (E) = ₁(E) + i₂(E), such as E₀, E₀ + Δ₀, and E₁, and three E₂ (Σ, Δ, Γ) structures at a lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The observation of new peaks, as well as the shifting and broadening of the critical points of Zn_1−xMn_xS epilayers, were investigated as a function of Mn composition by ellipsometric measurements for the first time. The characteristics of the peaks changed with increasing Mn composition. In particular, four new peaks were observed between 4.0 and 8.0 eV for Zn_1−xMn_xS epilayers, and their characteristics were investigated in this study.     

Crystal structure of YBa2Cu3O7−x thin films prepared by pulsed laser deposition with substrate bias voltage

The crystal structure of YBa₂Cu₃O_7−x thin films has been investigated by cross-section transmission electron microscopy. The samples were deposited on MgO (100) substrates at 670°C with substrate bias voltages of ±300 V. For the unbiased case, c-axis, a-axis and (103) oriented domains normal to the substrate surface were observed. In this film, the c-axis oriented domains are dominant, but the crystal often exhibits a longer c-lattice constant than that of the YBa₂Cu₃O_7−x system, so extra cationic layers are inserted in the YBa₂Cu₃O_7−x intrinsic stacking sequence. For the case of −300 V, rotated domains were dominant in the entire film; however, c-axis oriented domains also grow from the substrate surface. Small-angle semicoherent grain boundaries between them were observed. In the case of +300 V, all the grains show c-axis oriented YBa₂Cu₃O_7−x. The degree of preferential orientation of the grains is reduced at negative bias voltage of −300 V and the structure defects are reduced by applying a positive bias of +300 V.     

Electronic structure of Ga1−xCrxN investigated by photoemission spectroscopy

We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga_0.937Cr_0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.     

Vanadium-Al2O3 nanostructured thin films prepared by pulsed laser deposition: Optical switching

The formation and optical response of VO_x nanoparticles embedded in amorphous aluminium oxide (Al₂O₃) thin films by pulsed laser deposition is studied. The thin films have been grown by alternate laser ablation of V and Al₂O₃ targets, which has resulted in a multilayer structure with embedded nanoparticles. The V content has been varied by changing the number of pulses on the V target. It is found that VO_x nanoparticles with dimensions around 5 nm have been formed. The structural analysis shows that the vanadium nanoparticles are oxidized, although probably there is not a unique oxide phase for each sample. The films show a different optical response depending on their vanadium content. Optical switching as a function of temperature has been observed for the two films with the highest vanadium content, at transition temperatures of about −20 °C and 315 °C thus suggesting the presence of nanoparticles with compositions V₄O₇ and V₂O₅, respectively.     

Characterization of Ce1−xZrxO2 thin films prepared by pyrolytic spray technique

It was demonstrated that spray pyrolysis can be used to prepare Ce_1−xZr_xO₂ thin films with x between 0 and 1. The composition of these films was determined by electron probe microanalysis (EPMA), and the crystalline structure by X-ray diffraction (XRD) and Raman spectroscopy (RS). Cyclic voltammetry (CV) was performed in an electrolyte of propylene carbonate with 1 M LiClO₄. Films with high Zr content were incapable of charge exchange of Li⁺ ions. In the contrast, films with high Ce content were found to be able to insert/extract large charge densities of Li⁺ ions. They also remained transparent during Li⁺ intercalation.     

Optical properties of Cd1−xZnxTe thin films fabricated through sputtering of compound semiconductors

Cd_1−xZn_xTe thin film fabrication is necessary for its photovoltaic and imaging applications in large scale. Thermally annealed and thereby interdiffused r.f. sputtered multilayers comprising of CdTe and ZnTe have been utilized here for the fabrication of Cd_1−xZn_xTe thin films. Photoluminescence and change of resistance of the multilayer under illumination were studied using different annealing temperatures and varying number of repetitions. It was found that three number of repetitions annealed at 300 °C exhibited the best results.     

脉冲激光沉积法制备的Ni1-xFexO稀磁半导体的结构和磁性研究

利用脉冲激光沉积方法制备出了具有室温铁磁性的Ni_1-xFe_xO(x=0.02,0.05)稀磁半导体.X射线衍射(XRD)结果表明Ni_1-xFe_xO的晶体结构为NaCl结构,并且在Fe含量较高的Ni_0.95Fe_0.05O中出现了少量的α-Fe₂O₃物相.X射线吸收近 关键词： 1-xFe_xO')" href="#">Ni_1-xFe_xO XANES 脉冲激光沉积方法     

Fabrication and vacuum annealing of transparent conductive Ga-doped Zn0.9Mg0.1O thin films prepared by pulsed laser deposition technique

In this study, highly transparent conductive Ga-doped Zn_0.9Mg_0.1O (ZMO:Ga) thin films have been deposited on glass substrates by pulsed laser deposition (PLD) technique. The effects of substrate temperature and post-deposition vacuum annealing on structural, electrical and optical properties of ZMO:Ga thin films were investigated. The properties of the films have been characterized through Hall effect, double beam spectrophotometer and X-ray diffraction. The experimental results show that the electrical resistivity of film deposited at 200 °C is 8.12 × 10⁻⁴ Ω cm, and can be further decreased to 4.74 × 10⁻⁴ Ω cm with post-deposition annealing at 400 °C for 2 h under 3 × 10⁻³ Pa. In the meantime, its band gap energy can be increased to 3.90 eV from 3.83 eV. The annealing process leads to improvement of (0 0 2) orientation, wider band gap, increased carrier concentration and blue-shift of absorption edge in the transmission spectra of ZMO:Ga thin films.     

Characterization by electrolyte electroreflectance and X-ray photoelectron spectroscopy of amorphous Ni59Nb40Pt1−xSnx alloys and their activation by HF solutions

The influence of chemical etching with HF on the nature of the surface of amorphous Ni₅₉Nb₄₀Pt_1−xSn_x alloys has been studied in situ by electrolyte electroreflectance (EER) and ex situ by X-ray photoelectron spectroscopy (XPS). The EER spectrum of the untreated alloy in 0.5 M H₂SO₄ shows a bipolar band, which disappears after the HF treatment yielding a structureless EER spectrum similar to that of Pt, but reappears after several hours in the 0.5 M H₂SO₄ electrolyte. This process of dissolution by HF of an oxide species and its reappearance after a few hours cannot be followed by XPS, since the time interval between sample withdrawal from the electrolyte and actual measurement is of a few hours as well. XPS spectra showed the presence of metallic Nb before and after the HF treatment, and that niobium pentoxide was the main species in the as-quenched alloy, but that after treatment with HF it became a minor component, the main one being NbO. The main effect of the HF treatment is to produce a platinum enrichment of the surface, as unequivocally determined by cyclic voltammetry, XPS and EER. After Ar sputtering for 9 min the XPS spectrum of the untreated alloy showed metallic Nb only, while in the HF-treated alloy the peaks of metallic Nb were swamped by those of NbO and some Nb₂O₅. We interpret this difference as being due to the formation by the HF attack of a porous Nb film which becomes oxidized in the electrolyte and/or during transfer to the spectrometer, and so thick that it is not eliminated by Ar sputtering for 9 min.     

Structural and optical properties of Ba(Ti1−x,Nix)O3 thin films prepared by sol–gel process

Ba(Ti_1−x,Ni_x)O₃ thin films were prepared on fused quartz substrates by a sol–gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that Ni-doping has an obvious effect on the energy band structure. The energy gap of Ba(Ti_1−x,Ni_x)O₃ decreased linearly with the increase of Ni concentration. It indicates that the adjusting of band gap can be achieved by controlling the Ni-doping content accurately in Ba(Ti_1−x,Ni_x)O₃ thin films. This has potential application in devices based on ferroelectric thin films.     

X-ray diffraction characterization of MBE grown Pr1−xSrxMnO3 thin films on NGO(1 1 0)

Oxygen plasma-assisted molecular beam epitaxial (MBE) growth of Pr_1−xSr_xMnO₃ (PSMO) thin films has been carried out on NdGaO₃(1 1 0) (NGO) substrates. The growth parameters have been optimized to realize 2D layer-by-layer growth. XRD results of the epilayers show that the PSMO/NGO(1 1 0) thin films are of high crystal quality, as clear diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PSMO(1 1 0)//NGO(1 1 0), i.e., the c-axis being parallel to the surface. Both single scans (ω scan, 2θ/ω scan) and 2-axis reciprocal space mapping (RSM) were performed in an effort to assess the crystal structure, crystalline quality, surface and interface properties of the epitaxial layers. High temperature annealing effects on lattice structure and crystal quality have been studied and discussed. Transport property measurement of the PSMO thin film samples has been carried out and main features discussed.     

Structure, morphology and optical properties of SiO2−x thin films prepared by plasma-assisted pulsed laser deposition

The amorphous silicon oxide SiO_2−x thin films were prepared by the plasma-assisted pulsed laser deposition (PLD) method. X-ray diffraction spectrometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-VIS-NIR scanning spectrophotometry and ellipsometry were used to characterize the crystallinity, microscopic morphology and optical properties of obtained thin films. The influences of substrate temperatures, oxygen partial pressures and oxygen plasma assistance on the compositions of silicon oxide (SiO_2−x) thin films were investigated. Results show that the deposited thin films are amorphous and have high surface quality. Stoichiometric silicon dioxide (SiO₂) thin film can be obtained at elevated temperature of 200 °C in an oxygen plasma-assisted atmosphere. Using normal incidence transmittance, a novel and simple method has been proposed to evaluate the value of x in transparent SiO_2−x thin films on a non-absorbing flat substrate.     

Argon ion stimulated conversion between CFx (x = 0–3) chemical states and fluorine depletion in fluorocarbon films studied by X-ray photoelectron spectroscopy

Surface chemical composition of fluorocarbon films deposited onto indium-tin-oxide (ITO) substrates was modified by 2.0 keV Ar⁺ irradiation with doses of up to 2.6×10¹³ ions/cm². The effect of ion irradiation on the chemical composition and bonding configuration of the upper-surface and sub-surface regions were monitored by high-resolution angle-resolved X-ray photoelectron spectroscopy (AR-XPS). It was found that the as-deposited films compose of a distribution of CF, CF₂, CF₃ and C–C chemical states. C 1s line-shape analysis of XPS spectra measured at grazing and normal emission angles shows that as a result of the irradiation, the population of the CF₃ and CF₂ chemical states were preferentially depleted from the film’s surface resulting in an increased population of the CF and C–C chemical states in the upper-surface region of the film. It is suggested that low energy ion irradiation can be used to chemically modify the surface of fluorocarbon films.     

Photocurrent in superconducting YBa2Cu3O7−x films induced by an infrared free electron laser

Since the discovery of high-temperature cuprate superconductors, there has been much intensive study about the mechanism of them. However, identifying the dynamical mechanism behind them remains one of the great challenges in condensed matter physics. We investigated the high-temperature YBa₂Cu₃O_7−x superconducting films by using a free electron laser (FEL). The method is a type of photoelectron spectroscopy called a free electron laser internal photoemission. The spectrum of the photocurrent induced by FEL was measured in the case of 15 K and 100 K. We estimated the superconductive gap energy of YBa₂Cu₃O_7−x by comparing the photocurrent spectrum of the superconductive state with that of non-superconductive state.