Thermal properties of a Nd:LuVO4 crystal

A Nd‐doped lutetium orthovanadate Nd:LuVO₄ crystal has been grown using a modified Czochralski method. The thermal properties of this crystal have been studied by measuring the thermal expansion, specific heat and thermal diffusivity. The thermal expansion coefficients are α₁₁ = 1.7 × 10^‐6, α₂₂ = 1.5 × 10^‐6 and α₃₃ = 9.1 × 10^‐6/K in the temperature range of 298–573 K along the three respective crystallographic axes. The specific heat is almost linear and increases from 0.442 to 0.498 Jg^‐1K^‐1 in the measured temperature range. The thermal diffusivity is anisotropic and decreases with increasing temperature from 295 to 548 K. At room temperature the calculated thermal conductivities κ₁₁ and κ₃₃ are 7.96 and 9.77 Wm^‐1K^‐1, respectively. These thermal parameters of Nd:LuVO₄ crystal have indicated that it is an excellent candidate laser material. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Determination of lattice parameters and thermal expansion of CuGe2P3 + 0.2 Ge3P4 at elevated temperatures

CuGe₂P₃ is a p‐type semiconductor with zincblende structure. Ge₃P₄ is soluble up to 35 mole% in CuGe₂P₃. Lattice parameters of CuGe₂P₃ + 0.2 Ge₃P₄ have been determined at elevated temperatures from room temperature to 873 K using the x‐ray diffraction profiles (111), (200), (220), (311), (222), (400), (331), (420), (422) and (511) obtained from high temperature diffractometer. It is found that the lattice parameter increases linearly from 0.53856 nm at RT to 0.54025 nm at 873 K. The data on lattice parameter is used and coefficient of lattice thermal expansion of CuGe₂P₃ +0.2 Ge₃P₄ was determined at different temperatures. It is found that the coefficient of thermal expansion of CuGe₂P₃ +0.2 Ge₃P₄ is 5.48 x 10^‐6 K^‐1 and is independent of temperature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermal Properties and Phase Transformation of 2 mol% Y2O3-PSZ Nanopowders Prepared by a Co-precipitation Process

Two mol% Y₂O₃-PSZ precursor powders for dental applications were synthesized using ZrOCl₂·8H₂O and Y(NO₃)₃·6H₂O by a co-precipitation process at pH 7 and 348 K for 2 h. The thermal properties and phase transformation of 2Y-PSZ nanocrystallite powder have been investigated using a thermogravimetric and difference scanning calorimeter (TG/DSC), Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy (TEM), selected area electron diffraction and dilatometric analysis. Two weaker broad exothermic peaks appear at around 618 and 718 K were explored in DSC results. The TG analysis shows that minor weight loss occurs from 298 to 348 K, followed by three major weight losses at 610, 630 and 773 K. Calcinated at 773 and 1273 K, the crystallized phases are composed of the major phase of tetragonal ZrO₂ and minor phase of monoclinic ZrO₂. TEM reveals that the tetragonal ZrO₂ with an average size of less than 20.0 nm is mainly aggregated into the secondary aggregates with a size of small than 30.0 nm. The sintering curve of the compact pellet has a significant shrinkage with a linear rate of 18.5% at about 1341 K. Maximum densification rate happened at 1473 K, demonstrating the good low temperature sinterability for dental applications.     

Temperature variation of the structural and thermal characteristics of YBa2Cu3O7−x in the range from 90 to 400 K

The X-ray studies of the tetragonal YBa₂Cu₃O_7−x compound are performed at different temperatures from 400 to 90 K and the temperature variation of the thermal expansion coefficients and the Debye characteristic temperature is determined. The anisotropy of thermal expansion is investigated. It is found that the two dynamical characteristics monotonously decrease with temperature lowering whereas for the superconducting orthorhombic modification their temperature dependences are anomalous. The mean thermal expansion coefficient as well as the overall Debye temperature for the tetragonal phase are smaller than those for the orthorhombic one.     

Thermal Expansion of Bismuth Triborate

Thermal expansion of the monoclinic nonlinear optical crystal BiB₃O₆ (bismuth triborate) was measured by dilatometry within the temperature range from 173 K to 573 K using single crystal samples of dimensions ∼7 x 7 x 8 mm³. The four independent tensor coefficients are given and the calculated loci of zero thermal expansion of BiB₃O₆ are related to the loci of phase matching for second harmonic generation. Characteristic features of the crystal structure are taken to discuss the marked anisotropy of thermal expansion of BiB₃O₆.     

In‐situ investigation of the temperature dependent structural phase transition in CuInSe2 by synchrotron radiation

The temperature dependent structural phase transition from the tetragonal chalcopyrite like structure to the cubic sphalerite like structure in CuInSe₂ was investigated by in‐situ high temperature synchrotron radiation X‐ray diffraction. The data were collected in 1K steps during heating and cooling cycles (rate 38 K/h). The Rietveld analysis of the diffractograms led us to determine the temperature dependence of the lattice parameters, including the tetragonal deformation, |1‐η|, and distortion |u‐¼| (η=c/2a, a and c are the tetragonal lattice constant; u is the anion x‐coordinate). The thermal expansion coefficients α_a and α_c of the tetragonal lattice constant which are related to the linear thermal expansion coefficient α_L were obtained, as were α_a of the cubic lattice constant, also α_u and α_η. The transition temperature is clearly identified via a strong anomaly in α_L. The temperature dependence of the anion position parameter was found to be rather weak, nearly α_u∼0, whereas α_η increases slightly. However, both increase strongly when approaching to within 10 K of the transition temperature (the critical region) and |1‐η| as well as |u‐¼| go to zero with |T‐T_trans|^0.2 approaching the phase transition. The cation occupancy values, derived from the Rietveld analysis, remain constant below the critical region. Close to the transition temperature, the number of electrons at the Cu site increases with a dercrease in the number of electrons at the In site with increasing temperature, indicating a Cu‐In anti site occupancy, which is assumed to be the driving force of the phase transition. At the transition temperature 67% of Cu⁺ were found to occupy the Me1 site with a corresponding 67% of In³⁺ at the Me2 site. Although full disorder is reached with 50%, this level seems to be high enough that the phase transition takes place. The order parameter of the phase transition, goes with |T‐T_trans|^β to zero with the critical exponent β=0.35(7) which is in good agreement to the critical exponent β=0.332 calculated for order‐disorder transitions according to the Ising model. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Transmission electron microscopy and Rutherford backscattering spectrometry studies of Ag2Te films formed from Ag‐Te thin film couples

Formation of Ag₂Te thin films from room temperature (300 K) solid state reaction of Ag and Te thin film couples is investigated. Rutherford Backscattering Spectrometry (RBS) studies confirmed the complete miscibility of the couples and the stoichiometry of the resulting Ag₂Te. Structural analysis by Transmission Electron Microscopy (TEM) showed a fine‐grained structure with monoclinic and orthorhombic phases. Annealing at high temperatures resulted in the growth of giant crystallites with monoclinic phase at random sites. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure and phase transition of single crystalline CsNH2SO3

Differential scanning calorimetry (DSC) and X‐ray diffraction measurements have been performed on cesium sulfamate CsNH₂SO₃ single crystal. Two distinct endothermic peaks in the DSC curves are observed at 330 and 436 K. It is pointed out that the peak at 330 K is attributed to the structural phase transition, and the other peak at 436 K is associated with the thermal decomposition of the crystal. The structures in room‐ and high‐temperasture phases are determined, and the space group of the sample crystal is found to change from monoclinic P 2₁/c to orthorhombic Pnma. The structure of the room‐temperature phase consists of two different types of N‐H···O hydrogen bond, but in the high‐temperature phase there is no specific hydrogen bond between the NSO₃ pseudo‐tetrahera. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Room,low, and high temperature dehydration and phase transitions of kernite in vacuum and in air

Kernite Na₂B₄O₆(OH)₂·3H₂O dehydration in air at high temperature and in vacuum at room temperature has been studied. It was found that kernite easily dehydrates forming a new phase‐I both on heating and in vacuum. The chemical formula Na₂B₄O₆(OH)₂·1.5H₂O of the new phase‐I has been estimated on the basis of thermogravity analysis. It is triclinic with the unit cell parameters a = 7.047(8), b = 8.76(1), c = 13.08(2) Å, α = 93.40(9), β = 95.32(9), γ = 90.28(9)° changing slightly on pressure reduction. Due to the relatively low temperature (353 K) and reversibility of the kernite ⟷ phase‐I transition an anion of the new phase‐I likely consists of the same chains [B₄O₆(OH)₂]^2– like in kernite structure. The high anisotropy of kernite thermal expansion was explained by approaching of NaO chains due to the initial removing of water molecules from kernite crystal structure. The behaviour of the new phase‐I at low temperatures in vacuum was also investigated. A formation of an additional new phase II has been detected at the temperature of 93 K. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermal expansion and structural properties of (CuAlTe2)1–x(CuAlSe2)x solid solutions

Investigations of the thermal expansion of (CuAlTe₂)_1–x(CuAlSe₂)_x solid solutions in the temperature range from 100 to 800 K have been carried out for the first time. It has been demonstrated that the thermal expansion coefficient α_L grows considerably in the temperature range from 100 to 300 K, whereas the temperature dependence above 300 K is rather weak. The isotherms of composition dependence of the thermal expansion coefficient α_L for 100, 293, 500 and 800 K were constructed, and it was found that linear relations could express them. The Debye temperatures θ_D , the average mean‐square dynamic displacements , the average root‐mean‐square amplitudes of thermal vibration RMS , the anion position parameter u using S. C. Abrahams & J. L. Bernstein (u_AB ) and J. E. Jaffe & A. Zunger (u_JZ ) models were calculated. The composition dependence of microhardness H using the phenomenological theory was also calculated, and it was discovered that this dependence has a non‐linear character with a maximum of 383 kg/mm² at x=0.67. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Physicochemical properties of the organometallic nonlinear optical crystal: MnHg(SCN)4(C3H8O2)

The growth morphology of MMTG (manganese mercury thiocyanate glycol monomethyl ether, MnHg(SCN)₄(C₃H₈O₂)) crystal was indexed according to the X‐ray powder diffraction spectroscopy. The density and Mohs hardness were determined at room temperature. The specific heat of the crystal is 458.6 J.mol^‐1K^‐1 at 300 K. The thermal expansion coefficient (TEC) along the a, b and c axis is a₁=6.89 × 10^‐5 K^‐1, a₂=6.78 × 10^‐5 K^‐1 and a₃=2.08 × 10^‐5 K^‐1, respectively. The sameness and difference of the TECs are interpreted on the basis of crystal structure. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure and thermal behaviour of (Rb,Cs)BSi2O6 solid solutions

The crystal chemistry of Rb‐Cs boroleucites has been studied by means of X‐ray powder diffraction at room and elevated temperatures. The cubic I‐43d → cubic Ia3d phase transition was investigated using a series of samples prepared by solid‐state reaction along the pseudobinary system RbBSi₂O₆ ‐ CsBSi₂O₆. The Rietveld refinement of the structures of Rb_1‐xCs_xBSi₂O₆ solid solutions (x = 0.2, 0.4, 0.6, 0.8) demonstrates that the solutions with a high Rb content crystallise in the cubic I‐43d space group, and the boroleucites with a considerable Cs content have Ia3d symmetry. Rb can substitute Cs in a wide range of compositions. Within a narrow range of x = 0.5 ‐ 0.6 immiscibility was revealed. Under Rb‐Cs substitution the cubic lattice parameter, the (Rb,Cs)‐O distances, and the angles between tetrahedra of the I‐43d phase change clearly, while those of the Ia3d phase change slightly. The HTXRD data shows that the I‐43d phase transforms into a Ia3d phase on heating analogously to a change of the composition. As the Cs content increases the transition temperature decreases. The low temperature I‐43d phase shows a higher thermal expansion than the high temperature Ia3d phase. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Plastic Deformation of Cesium Iodide Single Crystals at High Temperatures

The plastic deformation of CsI crystals of three crystallographic orientations 〈100〉. 〈110〉. and 〈111〉 at temperatures from 423 to 773 K (0.5 to 0.86T_m) and strain rates from 2 × 10⁻³ to 10⁻⁵ s⁻¹ is studied. Four-stage stres-strain curves were found, three stages being more and more distinct with an increase in temperature up to 623 K above which stage III prevails. For all the temperatures, strain rates and oreintations studied the superplasticity features (jerky flow, deformation localization, active dynamical recovery etc.) were observed. The thermal activatoin analysis has shown that the rate of high temperature deformation of CsI is controlled by dislocation climb limited in its turn by mobility of cation vacancies (quasiviscous creep).     

Thermal and Nonlinear Optical Properties of Ca4YO(BO3)3

Ca₄YO(BO₃)₃ (YCOB) crystals have been grown using the vertical Bridgman method. The thermal properties of YCOB were measured for the first time to our knowledge. The specific heat is 729.7 J/kg K at 373K. The average thermal expansion coefficients along the a, b and c axes are 9.9 × 10^‐6 /K, 8.2 × 10^‐6 /K and 12.8 × 10^‐6 /K, respectively, in the temperature range of 293‐1173 K. The thermal conductivities along the a, b and c axes are 1.83 W/mK, 1.72 W/mK and 2.17 W/mK at 373 K. The anisotropy in the measured thermal conductivities of YCOB is consistent with the experimental results of the thermal expansion. The SHG of a Nd: YAG laser was compared with that of a KDP crystal. The effective nonlinear coefficients (d_eff) of YCOB in type I phase matching directions of (θ, ϕ) = (66.3°, 143.5°) and (65.9°, 36.5°) were estimated to be 1.45 pm/V and 0.91 pm/V, respectively. The bulk damage threshold was observed as 85 GW/cm² for single pulse of a Nd:YAG laser with 10 ns pulseduration.     

Thermal and Laser Properties of Nd:YVO4 Crystal

Nd:YVO₄ crystal has been grown by Czochralski method. The data of thermal expansion and specific heat have been measured. The thermal expansion coefficients along a- and c-axis are a₁ = 2.2 x 10^-6 /K, and a₃ = 8.4 x 10^-6 /K respectively. The specific heat is 24.6 cal/mol x K at 330 K. The large anisotropy along c- and a-axis of thermal expansion coefficients is explained by the structure of YVO₄ crystal. 921 mW output laser at 1.06 mikrom has been obtained with a 3 mm x 3 mm x 1mm crystal sample when pumped by 1840 mW cw laser diode, and the slope efficiency is 55.5%.     

The effect of oxygen partial pressure on physical properties of nano‐crystalline silver oxide thin films deposited by RF magnetron sputtering

Nano‐crystalline silver oxide films were deposited on glass and silicon substrates held at room temperature by RF magnetron sputtering of silver target under different oxygen partial pressures. The influence of oxygen partial pressure on the structural, morphological, electrical and optical properties of deposited films was investigated. Varying oxygen partial pressure during the sputter deposition leads to changes of mixed phase of Ag₂O and Ag to a single phase of Ag₂O and to AgO. The X‐ray diffraction and X‐ray photoelectron spectroscopy results showed the formation of single phase Ag₂O with cubic structure at oxygen partial pressures of 2x10^‐2 Pa while the films deposited at higher oxygen partial pressure of 9x10^‐2 Pa showed the formation of single phase of AgO with monoclinic structure. Raman spectroscopic studies on the single phase Ag₂O showed the stretching vibration of Ag‐O bonds. Single‐phase Ag₂O films obtained at oxygen partial pressure of 2x10^‐2 Pa were nano‐crystalline with crystallite size of 20 nm and possessed an electrical resistivity of 5.2x10^‐3 Ωcm and optical band gap of 2.05 eV. The films deposited at higher oxygen partial pressure of 9x10^‐2 Pa were of AgO with electrical resistivity of 1.8x10^‐2 Ωcm and optical band gap of 2.13 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal data and some physical properties of Tl2InGaTe4 crystals

The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl₂InGaTe₄ crystals are reported for the first time. The X‐ray diffraction technique has revealed that Tl₂InGaTe₄ is a single phase crystal of tetragonal body‐centered structure belonging to the space group. A Debye temperature of 124 K is calculated from the results of the X‐ray data. The current‐voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n ‐type conduction with an electrical resistivity, electron density and Hall mobility of 2.49×10³ Ω cm, 4.76×10¹² cm^–3 and 527 cm²V^–1s^–1, respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,structure and thermal properties of CuAlxGa1‐xSe2 alloys

Ingots of the CuAl_xGa_1‐xSe₂ (0 ≤ x ≤ 1) alloys system were prepared by direct fusion of the stoichiometric mixture of the elements. The analysis of X‐ray Powder Diffraction data showed the presence of one single phase with chalcopyrite tetragonal structure at room temperature for all the studied compositions. The lattice parameters, a and c, and the bond lengths were calculated. The phase transition temperatures were obtained by the onset method from Differential Thermal Analysis measurements performed on samples sealed in evacuated quartz ampoules. Fusion or transition enthalpies were determined from the area of the corresponding DTA peak. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

GaSe single crystals grown by Bridgman method have been doped by ion implantation technique. The samples were bombarded in the direction parallel to c‐axis by Si ion beam of about 100 keV to doses of 1 × 10¹⁶ ions/cm² at room temperature. The effects of Si implantation with annealing at 500 and 600 °C on the electrical properties have been studied by measuring the temperature dependent conductivity and photoconductivity under different illumination intensities in the temperature range of 100–320 K. It is observed that Si implantation increases the room temperature conductivity 10⁻⁷ to 10⁻³ (Ω‐cm)⁻¹ depending on the post annealing temperature. The analysis of temperature dependent conductivity shows that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Annealing of the samples at and above 600 °C weakens the temperature dependence of the conductivity and photoconductivity. This indicates that annealing of the implanted samples activates Si‐atoms and increases structural deformations and stacking faults. The same behavior was observed from photoconductivity measurements. Hence, photocurrent‐illumination intensity dependence in the implanted samples obeys the power low I_pc ∝ Φⁿ with n between 1 and 2 which is an indication of continuous distribution of localized states in the band gap. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of annealing on structural,electrical and optical properties of AgGa(Se0.5S0.5)2 thin films deposited by using sintered stoichometric powder

The structural, electrical and optical properties of AgGa(Se_0.5S_0.5 )₂ thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450–600 °C. X‐ray diffraction (XRD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 ^oC with mixed binary phases of Ga₂Se₃, Ga₂S₃, ternary phase of AgGaS₂ and single phase of S. The compositional analysis with the energy dispersive X‐ray analysis (EDXA) revealed that the as‐grown film has different elemental composition with the percentage values of Ag, Ga, Se and S being 5.58, 27.76, 13.84 and 52.82 % than the evaporation source powder, and the detailed information about the stoichometry and the segregation mechanisms of the constituent elements in the structure have been obtained. The optical band gap values as a function of annealing temperature were calculated as 2.68, 2.85, 2.82, 2.83, and 2.81 eV for as‐grown, annealed at 450, 500, 550, and 600 °C samples, respectively. It was determined that these changes in the band gap are related with the structural changes with annealing. The temperature dependent conductivity measurements were carried out in the temperature range of 250‐430 K for all samples. The room temperature resistivity value of as‐grown film was found to be 0.7x10⁸ (Ω‐cm) and reduced to 0.9x10⁷ (Ω‐cm) following to the annealing. From the variation of electrical conductivity as a function of the ambient temperature, the activation energies at specific temperature intervals for each sample were evaluated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)