基于铈钆共掺杂YAG单晶荧光片的高光效白光LED

为了满足高功率白光发光二极管(Light-Emitting Diode,LED)对荧光体的高性能要求,对白光LED用Cex Gd:YAG单晶荧光材料的制备和光学、电学、热学特性进行了研究.采用提拉法生长了CexGd:YAG(x=0.02,0.04,0.06,0.08)单晶,并借助于X射线衍射(XRD)、吸收光谱、发射光谱等对晶体的光谱特性进行了表征,同时也测试分析了相对荧光强度随温度的变化关系、基于不同Ce3+浓度Cex Gd:YAG单晶的白光LED性能参数.结果表明Cex Gd:YAG单晶在450 nm的蓝光激发下,产生一个500～650 nm的宽峰发射,在100℃高温下,其荧光光强比商用荧光体粉末高出10;.当Ce3+浓度为6;时,采用Cex Gd:YAG单晶荧光片的白光LED光效高达153 lm/W,是Ce:YAG和树脂荧光材料白光LED的两倍多.Cex Gd:YAG单晶荧光片,具有更高更稳定的荧光光强,制作的白光LED光效有明显提升,有望成为新型的商用荧光体.     

Effect of lattice oxygen on optical absorption, radiation hardness and thermally stimulated luminescence of BaF2 crystal

The influence of the presence of BaO impurity on the optical absorption, radiation hardness and thermally stimulated luminescence of BaF₂ has been investigated. The presence of oxygen impurity gives rise to three absorption bands in the UV region, peaking around 220, 280 and 335 nm. Further, the impurity is found to be detrimental to crystal hardness against ionizing radiations. The thermally stimulated luminescence (TSL) has been studied from gamma-irradiated crystals containing different fractions of BaO impurity. Four prominent glow peaks around 100°C (peak I), 150°C (peak II), 220°C (peak III) and 290°C (peak IV) are observed for crystals containing BaO impurity concentrations lower than 0.5% (by wt). For crystals containing higher impurity concentrations, two additional peaks around 75°C and 260°C are also observed. The kinetics of TSL emission is observed to be of first order, implying that the absorption and the emission centers responsible for TSL are the same. The normalized TSL output for peak I is found to vary linearly with the concentration of oxide impurity. This fact can be utilized to detect the presence of minute amounts of oxygen in BaF₂ lattice, which is crucial to the growth of crystals exhibiting high radiation hardness.     

钨酸铅闪烁晶体的双掺杂性能研究

本文采用坩埚下降法生长出了PbWO4:(F,Er)晶体和PbWO4:(F,Nd)晶体,并且对此两种晶体透过性能和闪烁发光性能进行了测试分析.透过光谱结果显示,PbWO4:(F,Er)晶体和PbWO4∶(F,Nd)晶体在350 nm至700nm范围内的透过率比纯的钨酸铅均有较大的提高.紫外激发发射光谱测试结果表明,通过双掺杂可以提高钨酸铅晶体闪烁发光的强度,并且PbWO4:(F,Er)双掺杂晶体在波长为527 nm处和546 nm处均形成了较强的发光峰.通过对掺杂晶体进行XRD分析可知,阴阳离子的同时掺入并未引起钨酸铅晶体结构的明显改变.     

Luminescence of crystals of divalent tungstates

Crystals of divalent tungstates are characterized by two main luminescence spectral ranges: a short-wavelength (blue) luminescence band in the range 390–420 nm and a group (often two groups) of longer wavelength (green) bands in the range 480–520 nm. For crystals of calcium, strontium, barium, cadmium, magnesium, zinc, and lead tungstates, it is shown that the wavelength corresponding to the maximum of the blue luminescence band (λ_max) correlates with the melting temperature (T_m) of these compounds. The position of the blue luminescence band is the same (in the range 510–530 nm) for crystals with different divalent cations. Annealing in vacuum and electron irradiation decrease the intensity of both blue and green luminescence bands but do not change the ratio of their maximum intensities. This circumstance suggests that vacancies serve as luminescence quenchers to a greater extent rather than facilitate the formation of emission centers responsible for a particular luminescence band.     

Thermally Stimulated Luminescence of Montmorillonite Clay

X-ray excited luminescence (XL) spectra of montmorillonite clay at RT showed a broad emission band around 380 nm with two shoulders at 340, 450 nm eitherside two sharp peaks and two shoulders are seen at 465, 487, and 548, 576 nm, respectively. The 548 and 576 nm peaks enhanced their intensity at LNT. Whereas thermally stimulated luminescence (TSL) revealed an intense glow peak at 355 K and a weak shoulder around 400 K. Room temperature annealing studies indicated that the 355 K glow peak is not as stable as 400 K shoulder which turns out to be a peak on RT annealing. The X-ray excited luminescence has been attributed to radiative recombination of electrons with holes which are associated with SiO^3-₄, AlO^4-₄ radicals and divalent impurities available in the naturally available clay. TSL is also understood on similar lines. Glow peak reactions are proposed tentatively and their trap parameters have been calculated.     

Ho~(3+)/Yb~(3+)∶8YSZ纳米粉体制备及发光性能研究

通过化学共沉淀法制备Ho~(3+)/Yb~(3+)共掺杂的氧化钇稳定的氧化锆(8YSZ)纳米粉体。研究了煅烧温度对Ho~(3+)/Yb~(3+)共掺杂8YSZ纳米粉体荧光光谱和上转换发光性能的影响。结果表明:在448 nm波长激发光激发下,Ho~(3+)/Yb~(3+)∶8YSZ纳米粉体有一个549 nm的绿光发射峰,随着煅烧温度的升高,Ho~(3+)/Yb~(3+)∶8YSZ纳米粉体的荧光强度先升高后降低。980 nm波长激光激发下,Ho~(3+)/Yb~(3+)∶8YSZ纳米粉体在450~750 nm范围内有一个中心波长在539 nm的绿光发射峰和一个中心波长在650 nm的红光发射峰,随着煅烧温度的升高,纳米粉体的颗粒尺寸增大的同时,其上转换发光强度也逐渐增大。     

掺杂抑制氟化钡晶体慢闪烁成分研究进展

高能物理强度前沿装置、飞行时间技术正电子发射断层扫描、超高频辐射成像和正电子湮灭寿命谱分析等应用对闪烁体的时间响应提出了更高的要求,发展超快衰减闪烁体已成为研究热点之一。氟化钡晶体是一种具有亚纳秒级快闪烁成分的独特无机闪烁体,但其衰减时间约0.6 μs的慢闪烁发光成分会在高计数率应用时引起严重的信号堆积。作为一种抑制慢闪烁成分的有效途径,氟化钡晶体慢闪烁成分抑制的掺杂研究在过去三十年受到持续关注。本文回顾了掺杂抑制氟化钡晶体慢闪烁成分的研究历史,提出了掺杂元素选择的基本原则,重点介绍稀土金属(La、Y、Lu和Sc)、碱土金属(Mg、Sr)、过渡金属(Cd)和碱金属(K)等掺杂的慢闪烁成分抑制特性、内在机理和应用研究情况,并展望了所面临的挑战与机遇。     

InSeI单晶的制备及其结构与性能研究

利用化学气相传输法(CVT)制备了InSeI单晶。该晶体为黄色的针状物,晶体较脆。在室温下进行X射线衍射分析发现,其属于四方晶系,晶胞参数为a=b=1.864 3(5) nm,c=1.012 0(3) nm,V=3.517 2 nm³,空间群为I4₁/a。紫外可见光吸收光谱、光致发光光谱等结果显示该晶体的禁带宽度是2.48 eV,在一定波段光的激发下,InSeI单晶在600 nm左右有较宽的发射峰,表明该晶体的发光方式为缺陷态发光。介电温谱表明InSeI单晶在440 K时其四方相的结构发生了相变。     

Broad near‐infrared fluorescence properties of Nd‐doped PbClF crystals

Nd‐doped PbClF crystals were grown with modified Bridgman method. Broad and flat emission band at 1.0 μm was observed. The FWHM value of 0.0091 wt.% Nd³⁺‐doped PbClF crystal at 1064 nm reached up to 30 nm with the peak emission cross‐section of 1.05×10^‐19 cm². All the results indicated that Nd‐doped PbClF crystal should be a promising tunable and ultrafast laser material. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Flux on thermoluminescence in Flux-grown BaFCl crystals

BaFCl crystals have been grown using BaF₂ and BaCl₂ by flux technique. Glow curves, optical absorption, and TL emission spectra of x/r — irradiated crystals are studied. The results have been compared with those BaFCl crystals grown from NaF flux so as to study the effects of flux on these properties. It is found that crystals grown from BaF₂ flux are relatively purer. An additional TL glow peak at 460 K, an optical absorption band at 775 nm and TL emission band at 485 nm have been obtained in the presently grown crystals. The additional glow peak, optical absorption band have been attributed to F(¯F) aggregate centers, whereas the 485 nm TL emission band to impurity centers.     

Eu3+离子注入β-Ga2O3单晶的应力变化和发光性质研究

采用离子注入法制备了不同剂量的β-Ga₂O₃:Eu³⁺样品,并在空气中进行了退火处理,成功实现了Eu³⁺的光学激活。通过拉曼和X射线衍射表征了β-Ga₂O₃晶体随Eu³⁺注入剂量的应力变化趋势,发现随着Eu³⁺剂量的增加,晶格应力先增加后减少,并对其内在机理进行了分析。利用阴极荧光光谱对晶体的发光性质进行了表征,主要观察到峰值位于380 nm附近、宽的缺陷发光峰以及峰值位于591 nm、597 nm和613 nm的Eu³⁺发光峰。通过高斯拟合发现,该380 nm发光峰主要由360 nm、398 nm和442 nm三个子峰构成,分别与自陷激子和施主-受主对有关。此外,Eu³⁺发光峰位置与强度受到基质局域晶体场的影响。     

The Excitation Wavelength Dependence of Adenine Cation Single Crystal Luminescence

The excitation wavelength dependence of luminescence measured in adenine cation crystals at 77 K is reported. The observed variations of all the luminescence parameters exhibit a marked correlation with a changing penetration depth of the excitation light. The alterations of luminescence intensity, vibronic structure of emission spectra, emission polarization and phosphorescence decay were attributed mainly to a variable contribution of the emission from local excited states which correspond to a different trap ensembles in the crystal bulk and near the surface, respectively.     

Structural and optical response of 2‐Mercaptoethonal capped CdS nanocrystals to Fe3+ ions

Cadmium sulfide (CdS) semiconductor nanocrystals (NCs) doped with Fe³⁺ have been synthesized via a solution‐based method utilizing dopant concentrations of (0–5%) and employing 2‐mercaptoehonal as a capping agent. X‐ray diffraction (XRD) results showed that the undoped CdS NCs are in mixed phase of cubic and hexagonal, where as the doped CdS NCs are in hexagonal phase. The crystallite size was increased from ∼1.2 nm to ∼2 nm. Diffuse reflectance spectroscopy studies (DRS) reveals that the band gap energy was decreased with Fe doping and it lies in the range of 2.58 ‐ 2.88 eV. Photoluminescence (PL) spectra of undoped CdS NCs show a strong green emission peak centered at 530 nm and a weak red emission shoulder positioned at 580 nm. After doping all the luminescence intensity was highly quenched and the green emission peak was shifted to orange region (580 nm), but the position of weak red emission shoulder was unaltered with doping. FTIR studies revealed that the NCs were sterically stabilized by 2‐mercaptoethanol. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Sm3+掺杂天然钠长石(NaAlSi3O8)荧光粉的发光性质研究

采用高温固相法以天然钠长石为基质,Sm3+为激活剂,制备了Sm3+掺杂天然钠长石的光致发光材料.用X射线衍射(XRD)研究了掺杂Sm3+离子对天然钠长石结构进行研究.在室温下测量了光致发光谱并找出了稀土离子的最佳掺杂浓度.样品在402nm激发下有很强的发射带;与近紫外LED芯片匹配,在402nm近紫外光激发下NaAlSi3O8:Sm3+的发射光谱由4个峰组成,发射峰值分别位于569nm、601nm、648nm、713nm.随着Sm3+掺量的增加,样品发光强度先增强后减弱,当Sm3+掺量为0.06mol时发光强度达到最大,浓度猝灭机理为电偶极-电偶极相互作用.分析了不同Sm3+掺杂浓度样品的荧光衰减时间.NaAlSi3O8:Sm3+的色坐标基本不变,位于橙红色区域.     

阴离子掺杂钨酸铅晶体的生长与发光性能研究

本文报道了阴离子F~-, Cl~-, I~- 和S~(2-)掺杂的PbWO_4晶体的生长与发光性能.通过对掺杂PbWO_4晶体的X射线粉末衍射、紫外可见区的透过光谱、光致激发、光产额和发光衰减特性进行了测试表征,结果表明:F~-掺杂能使PbWO_4晶体在短波方向的透过率明显提高,显著提高PbWO_4晶体的发光强度,但增加的发光强度主要来自于慢发光的贡献.而随着掺杂阴离子半径和电荷数的增加,PbWO_4晶体的发光强度逐渐降低,并且PbWO_4晶体吸收截止边逐渐向长波方向移动.     

Continuous preparation of decorated nano zinc oxide organic sols with intense luminescence

A sort of decorated nano ZnO organic sols have been successively prepared by pulsed laser ablation at the interface of ZnO target and a flowing liquid containing polymers. It is found that the decorated nano ZnO ethanol sols, the decorated nano ZnO-PS (polystyrene) cyclohexane sols and the decorated nano ZnO-PMMA (polymethyl methacrylate) ethyl butyrate sols all have strong fluorescence emission at 329 nm and 411 nm, 308 nm and 317 nm, and at 330 nm and 400 nm, respectively. The results show the decorating for nano ZnO will intensely affect their luminescence, and the wavelength and intensity of luminescence can be adjusted or controlled by the different decoration.     

无序激光晶体及其超快激光研究进展

激光是受激辐射的光放大,所辐射的波长取决于增益介质中关键电子的能级结构,特别是其最外层电子的状态决定了可能实现的激光特性.激光发展60年来,激光晶体作为激光的重要激活材料,推动了激光技术的进步和普及,是一个研究历史长而又异常活跃的研究领域.当前,超短超强脉冲激光在加工、医疗、国防等关系国计民生的领域有重要需求,适合超短...     

表面活性剂对水热法合成ZnS:Cu,Al纳米晶光致发光特性的影响

采用水热法直接合成了ZnS∶Cu,Al纳米荧光粉,并且系统研究了加入表面活性剂在不同S/Zn下,清洗样品和不清洗样品的结晶性、傅立叶红外光谱(FT-IR)及光致发光(PL)光谱.XRD和TEM测试结果表明:合成纳米晶为纯立方相结构,球形纳米晶尺寸约15 nm, 尺寸分布窄,分散性好.未清洗样品的结晶性比清洗样品的好,且加入表面活性剂和未清洗都导致粒径增大,影响纳米材料的表面态.改变[S~(2-)]/[Zn~(2+)]物质的量比、清洗和加入表面活性剂都会影响材料的PL强度.这说明其发光机理为紫外光激发材料表面的发光中心,即PL强度决定于纳米材料的表面态.     

Infrared photoluminescence from TlGaS2 layered single crystals

Photolimuniscence (PL) spectra of TlGaS₂ layered crystals were studied in the wavelength region 500‐1400 nm and in the temperature range 15‐115 K. We observed three broad bands centered at 568 nm (A‐band), 718 nm (B‐band) and 1102 nm (C‐band) in the PL spectrum. The observed bands have half‐widths of 0.221, 0.258 and 0.067 eV for A‐, B‐, and C‐bands, respectively. The increase of the emission band half‐width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm^‐2. The proposed energy‐level diagram allows us to interpret the recombination processes in TlGaS₂ crystals. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

白光发光二极管用CaAl2B2O7:Eu3+微晶的发光性质

利用高温固相法合成了CaAl2B2O7:Eu3+微晶.X射线衍射分析表明我们得到了纯相的CaAl2B2O7基质.样品在近紫外光和蓝光激发下能发出红光.发射光谱的主峰位于614nm,对应于Eu3+的5D0→7F2跃迁.激发光谱中两个主峰位于401nm和471nm,分别与紫外和蓝光LED相匹配.并研究了电荷补偿剂和Eu3+的浓度对样品发光强度的影响.所有掺入电荷补偿剂(Li+,Na+和K+)样品的发光强度都比没有掺入电荷补偿剂的样品高.其中掺入Li+的样品的发光强度最高.Eu3+的最佳浓度为6;.CaAl2B2O7:Eu3+是一种有应用前景的白光LED用红色荧光粉.