Synthesis of ZnO nanostructures composed of nanosheets with controllable morphologies

ZnO nanostructures composed of nanosheets have been synthesized by a facile low temperature reaction of Zn(OH)₂ and NaOH without the aid of any organic molecular templates. The influences of the reaction parameters, such as the concentrations of Zn(NO₃)₂, reaction temperatures, and reaction time on the morphologies of ZnO have been investigated. The thickness of ZnO nanosheets can be adjusted from 10–20 nm to 30–40 nm by altering the reaction temperatures from 80 °C to 180 °C. ZnO nanosheets are single crystals and the growth direction is perpendicular to [1100]. A possible gradual nucleation – rapid growth formation mechanism of ZnO nanosheets is proposed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of substrate temperature on the properties of electron beam evaporated ZnSe films

ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 °C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co‐efficient (10⁴ cm^‐1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39 – 2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm^‐1, 246.7 cm^‐1and 204.5 cm^‐1which are attributable to 2TA LO phonon and TO phonon respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical, electrical and luminescence properties of electron beam evaporated CdSe:In films

CdSe:In films were prepared by electron beam evaporation technique using CdSe and In₂Se₃ (purity ∼99.9%) pellets. The crystal structure of the films with and without Indium, measured by X‐ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks. X‐ray photoelectron spectroscopy (XPS) studies indicated binding energies corresponding to 54 eV (Se3d_5/2), 444 eV (In 3d_5/2), 411 eV (Cd 3d_3/2), (Cd 3d_5/2). Atomic force microscope (AFM) studies indicated a uniform surface.The grain size decreases with increase of In doping. A decrease in the band gap was observed with increase of dopant concentration. Resistivity of the films is in the range of 10^‐3 Ωcm. Carrier density was in the range of 10²¹ cm^‐3 for the films. The photolumineasenec spectra (PL) spectra indicated three peaks. The peak intensity decreases as the Indium concentration increases. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Geometrical aspects of solid solution separation by evaporation‐condensation driven in a closed system by a small temperature difference

Evaporation‐condensation driven in a closed system by a small temperature difference has demonstrated its ability to deliver semiconducting IV‐VI and II‐VI solid solution crystals of highest compositional uniformity. Geometrical aspects of solution component distribution emerging in the crystals grown in the near equilibrium evaporation/condensation systems are considered in this paper. The conclusion is drawn that no increase in the range of compositional variations with increase in the crystal size is to be anticipated. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films

ZnTe thin films were deposited onto well‐cleaned glass substrates kept at different temperatures (Ts = 303, 373 and 423 K), by vacuum evaporation method under the pressure of 10^–5 Torr. The thickness of the film was measured by quartz crystal monitor and verified by the multiple beam interferometer method. The structural characterization was made using X‐ray diffractometer with filtered CuKα radiation. The grain sizes of the microcrystallines in films increases with increase in substrate temperature. The strain (ε), grain size (D) and dislocation density (δ) was calculated and results are discussed based on substrate temperature. Optical behaviour of the film was analyzed from transmittance spectra in the visible region (400–800 nm). The optical transition in ZnTe films is direct and allowed type. The optical band gap energy shows an inverse dependence on substrate temperature and thickness. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Atomic force microscopy studies on surface morphologies of CdHg(SCN)4 crystals grown in solutions containing excessive amount of Cd(II) cations

Surface morphologies of CdHg(SCN)₄ (CMTC) crystals grown from solutions with excessive amount of Cd(II) cations (5%, 20% and 50% in molar ratio) have been investigated by atomic force microscopy (AFM). [Cd(SCN)_n]^2‐n (n ≤ 4) complex anions formed by addition of excessive Cd(II) cations in the solutions have been found to act either as growth units or impurities during CMTC crystal growth. On the prismatic faces, incorporation of [Cd(SCN)_n]^2‐n (n ≤ 4) complex anions as growth units leads to the formation of well‐oriented protuberance trains at the step fronts, named as “locally anisotropic crystal growth”. These protuberances become fewer, less distinct and nearly disappeared with the increase of excessive Cd(II) cations in the solutions. The pyramidal face, however, varies from regular 2D nucleation growth at a low concentration of Cd(II) to much rougher growth surfaces at high concentrations, exhibiting typical surface morphologies where crystal growth is completely inhibited by impurities. Observations in this experiment provide a new picture of crystal growth.     

Structural,optical, and electrical properties of electron beam evaporated CdSe thin films

CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm^‐1 and 625 cm^‐1respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

TEM,chemical etching and FTIR characterization of ZnTe grown by physical vapor transport

ZnTe ingots were obtained by the physical transport method, using an in‐house designed and built tubular furnace. The growth of ZnTe subsequently to the growth of a seed of this material allowed obtaining an ingot formed by only one large and single crystalline grain. TEM was used for the characterization of the as‐grown ZnTe single crystal ingots and commercial single‐crystalline wafers of the same material but grown by a higher temperature and more expensive technique, the Bridgman method. Both materials show very good crystalline microstructure, although some stacking faults were found in the commercial one. The infrared transmittance spectra of both materials were measured by FTIR and some differences, most likely due to differences in raw materials and growth methods, were found. The effectiveness and convenience of several chemical etchants to obtain the dislocation density and the minimal misorientation between adjacent subgrains in the as‐grown ZnTe wafers were checked. It has been found as the most advantageous the chemical solution that does not produce over‐etching. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of as‐grown ZnO crystals can be changed in a controlled way by an adequate combination of different growth conditions such as graphite covering of inner ampoule walls, thermal difference between source material and crystallization zone and additional gas (composition and pressure). In this frame some post‐growth annealing processes can be avoided reducing the time and cost of processes. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Controlled growth of ZnO torch‐like nanostructure arrays

Single‐crystal ZnO torch‐like nanostructure arrays were synthesized using a simple two‐step pressure controlled thermal evaporation method without any catalyst. The nanostructures had a hierarchical morphology, with well‐hexagonal faceted holders and needle‐like flames on them. The diameter of each single flame was about 20–40nm at the base and 10nm at the tip. Both the holders and flames were found to grow along the [0001] direction. The morphology of the structures could be effectively controlled by varying the growth temperature and vacuum pressure. The experimental results and analysis provided easy strategies to control the morphology of nanostructures and also enhanced the understanding of the growth mechanism. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

An improved prediction model of morphological modifications of organic crystals induced by additives

Additives have a great effect on the crystal morphology of organic compounds. The molecular modeling techniques were applied to predict the morphological modifications induced by additives. Besides molecular modeling software additionally some simulation approaches are needed. The build‐in and the surface docking approaches were applied to some host‐additive‐systems. It will be presented here that the suitability of these two approaches depends on the degree of anisotropy of the intermolecular bonding of the host substance. A procedure on how to choose an appropriate prediction approach for the individual crystal systems on investigation is suggested.     

Optical and magnetic properties of Nd‐doped ZnO nanoparticles

Nd‐doped ZnO nanoparticles with different concentration were synthesized by sol‐gel method. The structures, magnetic and optical properties of as‐synthesized nanorods were investigated. X‐ray diffraction (XRD) and x‐ray photoelectron spectroscopy (XPS) results demonstrated that Nd ions were incorporated into ZnO lattice; but Zn_1‐xNd_xO nanoparticles with Nd concentration of x = 0.05 showed Nd₂O₃ phase, so the saturation concentration of Nd in Zn_1‐xNd_xO is less than 5 at%. Vibrating sample magnetometer (VSM) measurements indicated that Nd doped ZnO possessed dilute ferromagnetis behaviour at room temperature. Photoluminescence spectroscopy (PL) showed that Nd ions doping induced a red slight shift and decrease in UV emission with increase of Nd concentration.     

A direct suppression of green band emission of ZnO particles by adjusting the volume fraction of ethanol in reaction solutions

ZnO particles were successfully prepared by one step CTAB‐assisted hydrothermal method with different volume fraction of ethanol‐water mixture solution. The formed thorn‐ball like ZnO particles have an average size of 1 ∼ 2 μm in diameter. XRD result shows a hexagonal wurtzite structure and higher crystallinity. Room‐temperature photoluminescence shows a strong and dominated peak at ∼383 nm with a green emission at ∼510 nm. The intensity ratio between the UV and green emission increased from 1.31 to 7.53 when the volume fraction of ethanol was changed from 0% to 50%, which shows a direct suppression of structural defects just by adjusting the ethanol fraction in reaction solutions. The possible growth and luminescence mechanisms for thorn‐ball like ZnO particles are discussed.     

Multimode phonon structure of Be‐containing II ‐ VI mixed crystals determined by IR spectroscopic ellipsometry

Spectroscopic ellipsometry in the infrared spectral range 250‐5000 cm^‐1 is used for analysis of the dielectric response of Zn_1‐x‐yBe_xMg_ySe and Zn_1‐x‐yBe_xMn_ySe crystals grown by a high‐pressure Bridgman method. Ellipsometric spectra display features in the spectral range 390‐500 cm^‐1 associated with BeSe‐type phonon modes. In the optical spectra of Zn_1‐x‐yBe_xMg_ySe crystals both BeSe‐type and MgSe‐type lattice absorption bands are detected. The MgSe‐like modes are located at approximately 300 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three and one or two classical damped oscillators corresponding to the BeSe‐like and the MgSe‐like transverse‐optical phonon modes, respectively. The frequencies of longitudinal‐optical phonons have been derived from the dielectric loss functions. A red‐shift of the BeSe‐like phonons frequencies with a mean rate 0.42 cm^‐1 (0.50 cm^‐1) per mole percent of Mg (Mn) incorporated to the alloy has been found for examined concentration range x, y ≤ 0.25. A noticeable damping the intensities of BeSe‐type modes with increasing fraction of Mg and Mn dopant is observed in comparison to the strengths of BeSe‐type modes in Zn_1‐xBe_xSe crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Comment on “Debye temperature and melting point of II‐VI and III‐V semiconductors” [Cryst. Res. Technol. 45, No. 9, 920–924 (2010)]

In the present work, we have readjusted some empirical parameters obtained by Kumar et al. in their work which contains some numerical errors.     

Synthesis and characterization of inorganic‐organic ZnS(aminopropane)n composite materials

The main goal of our work was the synthesis and characterization of ZnS(aminopropane)_n hybrid inorganic‐organic layered materials. The basic material of our investigation was ZnS(1,3‐dap)_1/2, (where dap denotes diaminopropane). Its crystal structure has been solved by X‐ray powder diffraction methods. This layered compound was prepared using 1,3‐diaminepropane, zinc sulphate (ZnSO₄) and tioacetamide (CH₃CSNH₂). We have also tried to obtain and characterize other materials: ZnS(1‐ap) and ZnS(1,2‐dap), where ap denotes aminopropane. But in these last two cases diffraction patterns were of much poorer quality, which prevented a full structural survey; thus we cannot directly prove that hybrid lamellar materials were obtained. All compounds were studied using X‐ray diffraction, chemical analysis, UV‐vis spectroscopy and scanning electron microscopy. Additionally, using X‐ray diffraction as a function of temperature, we obtained information about structural changes of obtained composite materials under temperature treatment. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Debye temperature and melting point of II‐VI and III‐V semiconductors

In this paper, simple relations are proposed for the calculation of Debye temperature θ_D and melting point T_mof II‐VI and III‐V zincblende semiconductors. Six relations are proposed to calculate the value of θ_D. Out of these six relations, two are based on plasmon energy data and the others on molecular weight, melting point, ionicity and energy gap. Three simple relations are proposed to calculate the value of T_m. They are based on plasmon energy, molecular weight and ionicity of the semiconductors. The average percentage deviation of all nine equations was calculated. In all cases, except one, it was estimated between 3.34 to 17.42 % for θ_D and between 2.37 to 10.45 % for T_m. However, in earlier correlations, it was reported between 10.59 to 33.38% for θ_D and 6.96 to 14.95% for T_m. The lower percentage deviation shows a significant improvement over the empirical relations proposed by earlier workers. The calculated values of θ_D and T_m from all equations are in good agreement with the available experimental values and the values reported by different workers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical and photoconductive properties of electron beam evaporated CdSxSe1‐x films

CdS_xSe_1‐x films were deposited by the electron beam evaporation technique on glass substrates at different temperatures in the range 30 – 300 °C using the laboratory synthesized powders of different composition. The films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the concentration of CdS increased. The root‐mean‐roughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the composition of the films shifted towards CdS side. The conductivity varies from 30 Ωcm^‐1 to 480 Ωcm^‐1 as the ‘x’ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Determination of the phase diagram for the crystallization of L‐asparaginase II by a turbidity technique

Phase diagrams including the metastable zone width for the L‐asparaginase II from Escherichia coli with both PEG₆₀₀₀ and ethanol as a precipitant agent were determined, respectively. A turbidity technique giving results of nucleation and solubility limits in hours rather than in days was introduced. For the first time such data necessary for designing and controlling of crystallization processes of L‐asparaginase II are presented. Since the catalytical activity is an important parameter for L‐asparaginase II as an enzyme, a new type of phase diagram plotting the enzymatic activity as a function of temperature was established as well. Additionally, the crystalline L‐asparaginase II crystals with different shapes that formed in PEG₆₀₀₀ and ethanol, respectively, were also investigated by X‐ray Powder Diffraction (XRPD).     

Determination of the phase diagram for the crystallization of L‐asparaginase II by a turbidity technique ‐ part II. ‐MPD and crystallography studies‐

The phase diagram for the crystallization of L‐asparaginase II including the metastable zone width (MZW), in the presence of PEG₆₀₀₀ and ethanol, respectively, has been studied by an online turbidity technique out of the crystallization in solution (see part I of this work 1 ). Here this paper describes a further investigation on constructing a phase diagram including MZW for the crystallization of L‐asparaginase II with a different precipitant agent of 2‐methyl‐2, 4‐pentandiol (MPD). Along with the phase diagram, the single crystal X‐ray data were successfully collected at 100K from a crystal formed in the presence of 26% (v/v) MPD. The crystals indicate an orthorhombic form and belong to the space group of P2₁2₁2₁ with the unit cell parameters a = 93.9, b = 125.77, c = 151.75Å. The crystal diffracted up to a resolution of 2.88 Å.