Quasi-direct optical transitions in Ge nanocrystals embedded in GeO<Subscript>2</Subscript> matrix

GeO₂ films with germanium nanocrystals (NCs) were deposited from supersaturated GeO vapor with subsequent dissociation on Ge:GeO₂. The films were studied using photoluminescence (PL), Raman scattering, IRspectroscopy techniques. Ge NCs in initial film have sizes about 6–8 nm and have no visible PL signal. The broad green-red PL peak was detected in Ge:GeO₂ films after thermal annealings. According to effective mass approach, maximum of PL signal from such relatively big Ge NCs should be in IR region. The experimentally observed PL signal is presumably originated due to quasi-direct L ₁-L ₃’ optical transitions “folded” in germanium NCs. The article is published in the original.     

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.     

Density functional study of low-lying isomers of SiO<Subscript>4</Subscript>, GeO<Subscript>4</Subscript> and CO<Subscript>4</Subscript>, and their relation to tetrahedral solid phases

In silica (SiO₂) and in most silicates, atomic associations exist with composition SiO₄ and a structure with four O atoms in tetrahedral coordination around the Si atom. A similar feature is observed in germania (GeO₂) and some solids containing Ge instead of Si, although the number of phases containing GeO₄ tetrahedra is smaller. In contrast, and in spite of the fact that C is in the same column of the periodic table as Si and Ge, CO₂ is a molecular solid, and crystalline and amorphous phases of CO₂ showing CO₄ tetrahedra are only obtained under extremely high pressures. We have investigated the relation between free SiO₄, GeO₄ and CO₄ clusters and the tetrahedral associations found in the solids mentioned above. The lowest energy structure of those three free clusters is planar, but they have near-tetrahedral and distorted-tetrahedral isomers. The promotion energy from the planar structure to the distorted tetrahedral is low in SiO₄, large in CO₄, and intermediate in GeO₄. This correlates with the facility to form tetrahedral associations in the solids.     

Absorption and photoluminescence properties of silver clusters in SiO<Subscript>2</Subscript> matrix

Absorption and luminescence properties of silver nanoclusters embedded in SiO₂ matrixes were studied experimentally. Thin SiO₂ films with different amount of silver were produced by co-deposition of Ag and SiO₂ onto the silica substrates in vacuum. The thus obtained films possess three peaks in absorption spectra at 297, 329 and 401 nm and two peaks in luminescence spectra at about 500 and 650 nm. We ascribed these spectral features to silver nanoclusters of different sizes that present in the film. Thermal annealing transforms both absorption and emission spectra of the films. Lager clusters that are formed after annealing possess one absorption band at 350–450 nm and one luminescence band at 510 nm. The luminescence was observed only in samples with the silver content of less than 2.2%. Quenching of the luminescence in samples with higher concentration of silver is due to the presence of larger particles with plasmonic properties.     

Photoluminescence of GeO<Subscript>2</Subscript> films containing germanium nanocrystals

Germanium nanocrystals were formed in a GeO₂ film during the process of germanium monoxide gas-phase deposition onto a sapphire substrate and studied by photoluminescence (PL) and Raman scattering spectroscopy. A PL peak in this heterosystem was observed in the visible region at room temperature. The sizes of Ge nanocrystals were estimated from the position of a Raman peak corresponding to scattering by localized optical phonons in germanium. The PL peak position calculated with allowance for the electron and hole size quantization in Ge nanocrystals coincides well with the experimentally observed position of this peak.     

Effect of the chemical state of silver on the luminescence properties of GeO<Subscript>2</Subscript>-Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ag films

A sol-gel method is used to prepare GeO₂-Eu₂O₃-Ag films in which the luminescence efficiency of Eu³⁺ ions during UV excitation is comparable to that in films activated by organic europium complexes. The luminescence spectra of these films are recorded, and the films are also studied using EPR and x-ray diffraction. The main origin of this effect is found to be complex Eu-Ag centers with a high quantum yield of the intracenter transfer of excitations to the rare-earth activator from silver ions and Ag _m ⁿ⁺ oligomer clusters located on the surface of silver nanoparticles.     

Anomalous temperature dependence of photoluminescence in GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films and GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/SiO<Subscript>2</Subscript> nano-heterostructures

The optical properties of GeO _x film and GeO _x /SiO₂ multilayer heterostructures (with thickness of GeO _x layers down to 1 nm) were studied with the use of Raman scattering and infrared spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeO _x and interface defects for the case of GeO _x /SiO₂ multilayer heterostructures. From analysis of temperature dependence of photoluminescence intensity, it was found that rate of nonradiative transitions in GeO _x film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of photoluminescence intensities for GeO _x /SiO₂ multilayer heterostructures.     

Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn₂GeO₄ has been formed with (2 2 0) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761 nm, which originate from the transition between oxygen vacancy () and Zn vacancies (V_Zn), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn₂GeO₄ from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn₂GeO₄:Mn.     

Oxidation mechanism of hydrogen-terminated Ge(1 0 0) surface

Control of the surface chemistry to prepare a robust termination on the Ge surface is crucial for the development of high-end Ge devices. In this study, oxidation of a H-terminated Ge surface was studied in air ambient and H₂O using a multiple internal reflection Fourier transform infrared spectroscopy (MIR FT-IR) technique. Ge surface treated in less diluted HF exhibited a stronger Ge-H peak intensity, and the surface was easily oxidized in the air ambient. Therefore, it is believed that the treatment of the Ge surface in highly diluted HF solution has an advantage in suppressing the oxidation of Ge in the air ambient. For the oxidation of Ge(1 0 0) surface in air ambient, the Ge surface is attacked by oxidizing agents to break Ge-H and Ge-Ge bonds, and the transition GeO_x layer is first formed, followed by a layer-by-layer GeO₂ formation with the increase in exposure time. When the H-terminated Ge surface was treated in H₂O, GeO_x was mainly formed, the thickness of the oxide layer was not changed with an increase in treatment time, and the Ge surface was maintained in a suboxide state, which exhibits a different oxidation mechanism from that in air ambient.     

磁控共溅射法制备的Zn2GeO4多晶薄膜结构及其光致发光研究

用射频磁控共溅射方法在不同温度的单晶硅基片上生长薄膜,然后在800℃真空环境下对薄膜进行退火处理,成功获得了结晶状态良好的Zn₂GeO₄多晶薄膜.利用X射线衍射(XRD),X射线光电子能谱(XPS)和原子力显微镜(AFM)对薄膜进行了结构、成分和形貌分析,研究了基片温度对三者的影响. 结果显示,当基片温度升高到400℃以上时,薄膜中的Zn₂GeO₄晶粒在(220)方向上显示出了明显的择优取向. 当基片温度在500—600℃范围内,有利于GeO₂结晶相的形成. XPS显示薄膜中存在着Zn₂GeO₄,GeO₂,GeO,ZnO四种化合态. 同时,随着基片温度的升高,晶粒尺寸增大且薄膜表面趋于平整. 薄膜的光致发光在绿光带存在中心波长为530和550nm两个峰,应该归因于主体材料Zn₂GeO₄中两个不同的Ge²⁺的发光中心. 关键词： 射频磁控溅射 2GeO₄')" href="#">Zn₂GeO₄ 荧光体     

Scanning-probe-induced local decomposition of solid germanium monoxide films: The nano-pattering of germanium

The possibility of forming the Ge-based wires with the nanoscale’s lateral resolution using the local modification of GeO_(sol) films by a scanning probe microscope was demonstrated for the first time. The property of the solid germanium monoxide films, namely, their metastability, was used to decompose the GeO film on Ge and GeO₂ by running the high-density electric current under the probe of the atomic force microscope.     

Ultrafast transient photoinduced absorption in Ge core and Ge/GeO<Subscript>2</Subscript> core/shell nanoparticles: effect of interface passivation

Transient photoinduced absorption in Ge core and Ge/GeO₂ core/shell nanoparticles (NPs) has been studied in visible spectral range. Two distinctive relaxation processes were observed: the fast relaxation with lifetime of several picoseconds corresponds to the carriers transfer from the excitation region to the surrounding interface or defect-related states, and the slow relaxation (tens of picoseconds) is correlated with the carriers through the interface-related states toward the indirect lowest energy states. Time-resolved studies show that the passivation of GeO₂ shell significantly reduces the density of interface state and suppresses the rate of carrier trapping in Ge/GeO₂ core/shell structure, which provides an alternative method to modulate the optical properties in NPs.     

First principles study of electronic and structural properties of the Ge/GeO2 interface

The electronic and structural properties of the Ge/GeO₂ interface are addressed through a density functional simulation scheme which includes the use of hybrid functionals for achieving accurate band gaps, band offsets and defect levels. The present work discusses the germanium dangling bond levels, the thermodynamics of GeO_x, the stability of the oxygen vacancy across Ge/HfO₂ interfaces, the atomic structure of GeO_x, electron and hole trapping in GeO_x, and the band alignment at the Ge/GeO₂ interface.     

Synthesis and properties of barium ferrigermanate Ba<Subscript>2</Subscript>Fe<Subscript>2</Subscript>GeO<Subscript>7</Subscript>

The magnetic susceptibility and specific heat of single crystals of the Ba₂Fe₂GeO₇ barium ferrigermanate are investigated. It is revealed that the temperature dependence of the magnetic susceptibility exhibits a kink at a temperature T = 8.5 K. The number of nonequivalent positions of Fe³⁺ ions and their occupancies are determined using Mössbauer spectroscopy. It is shown that the Fe³⁺ ions located in tetrahedral positions T2 are ordered incompletely, which is inconsistent with the results obtained previously. An assumption is made regarding the possible ground magnetic state of the Ba₂Fe₂GeO₇ compound.     

Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO₂ thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can be controlled in the range of 3–6 nm by variation of the annealing parameters. Using a combination of transmission electron microscopy and Raman-scattering spectroscopy, the nanoclusters were shown to be crystalline. However, photoluminescence measurements showed no light emission that could be definitively correlated to the presence of the nanoclusters. PACS 61.82.Rx; 78.67.Bf; 81.07.Bc     

Nondestructive investigation of interface states in high‐k oxide films on Ge substrate using X‐ray absorption spectroscopy

The unoccupied electronic structures of 5 nm thick high permittivity (k) oxides (HfO₂, ZrO₂, and Al₂O₃) and SiO₂ films on Ge substrates were examined using O K‐edge X‐ray absorption spectroscopy. Comparative studies with those on Si substrates showed contrasts in the conduction bands, which should be due to the formation of interface states. In the Al₂O₃ and SiO₂ films, GeO₂ layers are formed at the interface and they suppress in part the formation of detrimental germanate phases. In contrast, in the HfO₂ and ZrO₂ films, no signature of the Ge‐oxide phase is observed but some germanate phases are expected to prevail, suggesting a degradation of the gate oxide characteristics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Determination of the charge state of chromium in Cr:Bi<Subscript>12</Subscript>GeO<Subscript>20</Subscript> single crystals by spectral luminescence methods

The valence state and structural localization of Cr ions in Cr:Bi₁₂GeO₂₀ single crystals grown by the Czochralski method in air and annealed in argon or UV-irradiated have been determined in the spectral luminescence study. It is established that chromium is in the state of tetrahedrally coordinated Cr⁴⁺ ions in the samples studied. Octahedrally coordinated Cr²⁺ and Cr³⁺ ions and tetrahedrally coordinated Cr⁵⁺ ions were not revealed.     

Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on Ge substrate

HfO₂ films are deposited by atomic layer deposition (ALD) using tetrakis ethylmethylamino hafnium (TEMAH) as the hafnium precursor, while O₃ or H₂O is used as the oxygen precursor. After annealing at 500℃ in nitrogen, the thickness of Ge oxide's interfacial layer decreases, and the presence of GeO is observed at the H₂O-based HfO₂ interface due to GeO volatilization, while it is not observed for the O₃-based HfO₂. The difference is attributed to the residue hydroxyl groups or H₂O molecules in H₂O-based HfO₂ hydrolyzing GeO₂ and forming GeO, whereas GeO is only formed by the typical reaction mechanism between GeO₂ and the Ge substrate for O₃-based HfO₂ after annealing. The volatilization of GeO deteriorates the characteristics of the high-κ films after annealing, which has effects on the variation of valence band offset and the C–V characteristics of HfO₂/Ge after annealing. The results are confirmed by X-ray photoelectron spectroscopy (XPS) and electrical measurements.     

Interactions of germanium atoms with silica surfaces

GeH₄ is thermally cracked over a hot filament depositing 0.7-15 ML Ge onto 2-7 nm SiO₂/Si(1 0 0) at substrate temperatures of 300-970 K. Ge bonding changes are analyzed during annealing with X-ray photoelectron spectroscopy. Ge, GeH_x, GeO, and GeO₂ desorption is monitored through temperature programmed desorption in the temperature range 300-1000 K. Low temperature desorption features are attributed to GeO and GeH₄. No GeO₂ desorption is observed, but GeO₂ decomposition to Ge through high temperature pathways is seen above 750 K. Germanium oxidization results from Ge etching of the oxide substrate. With these results, explanations for the failure of conventional chemical vapor deposition to produce Ge nanocrystals on SiO₂ surfaces are proposed.     

The Influence of the V<Subscript>2</Subscript>O<Subscript>5</Subscript> · GeO<Subscript>2</Subscript> Glass Phase on the Properties of AgI Nanolayers

Using X-ray phase analysis and impedance monitoring, it was shown that for a nanolayered structure, softened glass (V₂O₅ · GeO₂) can take an imprint from AgI lattice and retain it while being cooled to temperatures below Tg.