Photoluminescence of GeO<Subscript>2</Subscript> films containing germanium nanocrystals

Germanium nanocrystals were formed in a GeO₂ film during the process of germanium monoxide gas-phase deposition onto a sapphire substrate and studied by photoluminescence (PL) and Raman scattering spectroscopy. A PL peak in this heterosystem was observed in the visible region at room temperature. The sizes of Ge nanocrystals were estimated from the position of a Raman peak corresponding to scattering by localized optical phonons in germanium. The PL peak position calculated with allowance for the electron and hole size quantization in Ge nanocrystals coincides well with the experimentally observed position of this peak.     

The refractive index of homogeneous SiO<Subscript>2</Subscript> thin films

The effect of the through-thickness inhomogeneity of SiO₂ films on their refractive index is studied. The SiO₂ films, deposited by tetraethoxysilane pyrolysis on plane-parallel oriented crystalline quartz substrates and on silicon plates, were etched layer-by-layer in Pliskin’s solution. The refractive index and the geometric thickness of films were calculated from the measured ellipsometric angles after each etching. The determination errors of the refractive indices as functions of the film thickness, which result from the measurement errors of the polarization angles and substrate parameters, are numerically analyzed. For SiO₂ films thicker than 20nm, no effect of inhomogeneity is found. The refractive indices of thinner films were observed to depend on the thickness. The reasons for such dependences are discussed.     

Quasi-direct optical transitions in Ge nanocrystals embedded in GeO<Subscript>2</Subscript> matrix

GeO₂ films with germanium nanocrystals (NCs) were deposited from supersaturated GeO vapor with subsequent dissociation on Ge:GeO₂. The films were studied using photoluminescence (PL), Raman scattering, IRspectroscopy techniques. Ge NCs in initial film have sizes about 6–8 nm and have no visible PL signal. The broad green-red PL peak was detected in Ge:GeO₂ films after thermal annealings. According to effective mass approach, maximum of PL signal from such relatively big Ge NCs should be in IR region. The experimentally observed PL signal is presumably originated due to quasi-direct L ₁-L ₃’ optical transitions “folded” in germanium NCs. The article is published in the original.     

Effect of the chemical state of silver on the luminescence properties of GeO<Subscript>2</Subscript>-Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ag films

A sol-gel method is used to prepare GeO₂-Eu₂O₃-Ag films in which the luminescence efficiency of Eu³⁺ ions during UV excitation is comparable to that in films activated by organic europium complexes. The luminescence spectra of these films are recorded, and the films are also studied using EPR and x-ray diffraction. The main origin of this effect is found to be complex Eu-Ag centers with a high quantum yield of the intracenter transfer of excitations to the rare-earth activator from silver ions and Ag _m ⁿ⁺ oligomer clusters located on the surface of silver nanoparticles.     

Synthesis and properties of barium ferrigermanate Ba<Subscript>2</Subscript>Fe<Subscript>2</Subscript>GeO<Subscript>7</Subscript>

The magnetic susceptibility and specific heat of single crystals of the Ba₂Fe₂GeO₇ barium ferrigermanate are investigated. It is revealed that the temperature dependence of the magnetic susceptibility exhibits a kink at a temperature T = 8.5 K. The number of nonequivalent positions of Fe³⁺ ions and their occupancies are determined using Mössbauer spectroscopy. It is shown that the Fe³⁺ ions located in tetrahedral positions T2 are ordered incompletely, which is inconsistent with the results obtained previously. An assumption is made regarding the possible ground magnetic state of the Ba₂Fe₂GeO₇ compound.     

Anomalous temperature dependence of photoluminescence in GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films and GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/SiO<Subscript>2</Subscript> nano-heterostructures

The optical properties of GeO _x film and GeO _x /SiO₂ multilayer heterostructures (with thickness of GeO _x layers down to 1 nm) were studied with the use of Raman scattering and infrared spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeO _x and interface defects for the case of GeO _x /SiO₂ multilayer heterostructures. From analysis of temperature dependence of photoluminescence intensity, it was found that rate of nonradiative transitions in GeO _x film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of photoluminescence intensities for GeO _x /SiO₂ multilayer heterostructures.     

Characterization of the nonlinear refractive index of the laser crystal Yb:KGd(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

We present results of the characterization of the nonlinear refractive index of the laser crystal Yb:KGd(WO₄)₂ using a z-scan technique over the 800–1600 nm wavelength range. Based on our experimental and theoretical results we conclude that Yb:KGW crystal is a good candidate for efficient Kerr-lens mode locking. PACS 42.65.An; 42.65.Hw; 42.55.Rz; 42.65.Re     

High-temperature heat capacity of oxides in the GeO<Subscript>2</Subscript>-PbO system

Data on the heat capacity of Pb₃GeO₅, Pb₅Ge₃O₁₁, PbGeO₃, and PbGe₃O₇ oxides over a wide range of temperatures have been obtained.     

Interaction of dyes with Ag<Subscript>2</Subscript>S nanoclusters adsorbed on AgBr microcrystals

The photoexcitation relaxation is considered in a system consisting of a molecular and J-aggregated dye adsorbed on the surface of silver sulfide nanosized clusters (nanoclusters) placed on AgBr microc-rystals. It is found that the photoexcitation in the region of the dye absorption relaxes not only via the fluorescence, but also via the phosphorescence of nanoclusters. It is shown that, depending on the dye, the phosphorescence of nanoclusters is most efficiently excited in the absorption region of either molecular or J-aggregated states of dyes. It is assumed that this difference is caused by different nature of the adsorption of dyes on the nanocluster surface and by different interactions between the photoexcited states of dye molecules and J aggregates. These results can find wide applications in various fields of nanophotonics and allow one to both control the photoexcitation relaxation processes in nanocluster-dye systems and to observe new manifestations of these processes.     

Preparation and investigation of composite SiO<Subscript>2</Subscript>-TiO<Subscript>2</Subscript> films

SiO₂-TiO₂ films [Si:Ti = 1:(0.06–2.3)] are obtained by the sol-gel method. The structural and photoluminescent properties of the films and powders heat-treated at different temperatures are studied. It is shown that after 700°C the composite consists of TiO₂ crystallites that are structurally similar to anatase and distributed in an amorphous SiO₂ matrix. The photoluminescence spectra have maxima at 450–500 nm. The photoluminescence intensity depends on the treatment temperature and TiO₂ content. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 357–361, May–June, 2007.     

Study of the dynamics and mechanisms of deformation of thin chalcogenide As(Ge)<Subscript>2</Subscript>Se<Subscript>3</Subscript> films by nanoindentation

The mechanical properties of As₂Se₃ and Ge₂Se₃ thin films have been studied by the method of quasi-static nonoindentation. The mechanisms of formation and recovery of the indentations in the studied materials have been analyzed under conditions of their local loading. It has been revealed that the deformation mechanism of the chalcogenide films changes in going from As₂Se₃ to Ge₂Se₃. It has been found that, during deformation of the As₂Se₃ film under the indenter, the accumulation of plastic deformation prevails, and, for the Ge₂Se₃ film, the substantial mechanism is the relaxation of its deformation.     

Photoacoustic spectroscopy of thin films of As<Subscript>2</Subscript>S<Subscript>3</Subscript>, As<Subscript>2</Subscript>Se<Subscript>3</Subscript> and GeSe<Subscript>2</Subscript>

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As₂S₃, As₂Se₃ and GeSe₂ exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As₂S₃ (thickness 100 μm and 80 μm), As₂Se₃ (thickness 100 μm and 80 μm) and GeSe₂ (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.      

Effects of LaNiO<Subscript>3</Subscript> on the structures and properties of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films

SrBi₂Ta₂O₉(SBT)/LaNiO₃(LNO)/Si and SBT/Pt/TiO₂/SiO₂/Si multilayers were fabricated by pulsed laser deposition. With Pt top electrodes, the measured remanent polarization (2P_r) of Pt/SBT/LNO/Si and Pt/SBT/Pt/TiO₂/SiO₂/Si capacitors was 6.5 C/cm² and 5.2 C/cm², respectively. Using LNO as both bottom electrodes and buffer layers, enhanced non-c-axis crystalline SBT films were induced, which resulted in a 2P_r greater than that of the Pt/SBT/Pt/TiO₂/SiO₂/Si capacitor. The hysteresis loop of the Pt/SBT/LNO/Si capacitor showed a great external-field-dependent horizontal shift. Using an electron-injection model, this dependence was addressed. The fatigue-free property of the Pt/SBT/LNO/Si capacitor was experimentally established, in that the non-volatile polarization decreased by less than 5% of the initial value after 1.44×10⁹ switching cycles . PACS 77.84.Dy; 68.65.+g     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

Baric changes in refractive indices of K<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> crystals

The influence of uniaxial pressure applied along the principal crystallophysical directions on the dispersion and temperature dependences of the refractive indices n _i of K₂ZnCl₄ crystals has been investigated. The n _i values are found to be fairly sensitive to uniaxial pressure, whereas an uniaxial stress does not change the behavior of the dispersion and temperature dependences of n _i . The baric changes in n _i have been studied. The electronic polarizability α _i , refractions R, and parameters of UV oscillators (λ_0i , B _1i ) of mechanically deformed K₂ZnCl₄ crystals have been calculated. The contributions of UV and IR oscillators to n _i (λ) have been estimated for different temperatures, spectral regions, and stresses. A significant baric shift of the points of the paraelectric phase-incommensurate phase-commensurate phase transitions to different temperature ranges, depending on the direction of pressure application, is found; this shift is due to the effect of uniaxial stress on the K₂ZnCl₄ crystal structure.     

Giant magnetorefractive effect in La<Subscript>0.7</Subscript>Ca<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> films

Complex experimental investigations of the structural, optical, and magneto-optical properties (magnetotransmission, magnetoreflection, and transversal Kerr effect, as well as the magnetoresistance, of La_0.7Ca_0.3MnO₃ epitaxial films indicate that magnetoreflection and magnetotransmission in manganite films can reach giant values and depend strongly on the magnetic and charge homogeneity of the films, their thickness, and spectral range under investigation. It has been shown that the optical enhancement of the magnetorefractive effect occurs in thin films as compared to manganite crystals. In the region of the minimum of the reflectance near the first phonon band, the resonance-like magnetorefractive effect has been observed, which is accompanied by change of the sign of the magnetoreflection. A model based on the theory of the magnetorefractive effect has been proposed to qualitatively explain this behavior.     

Self-assembling of Ge quantum dots in the CaF<Subscript>2</Subscript>/Ge/CaF<Subscript>2</Subscript>/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

A CaF₂/Ge/CaF₂/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam epitaxy. A negative differential conductivity and conductivity oscillations caused by resonant hole tunneling were observed at room temperature. The energy spacing between the levels in quantum dots, as determined from the oscillation period, is 40–50 meV depending on the Ge dot size.     

Photoaccumulating film systems based on TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript> and TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript>:V<Subscript>2</Subscript>O<Subscript>5</Subscript> nanoheterostructures

The thin-film photocatalysts TiO₂/MoO₃ and TiO₂/MoO₃:V₂O₅ obtained by a combination of sol–gel and sintering techniques were studied using the photooxidation of probing dyes, EPR spectroscopy, X-ray diffraction analysis, and electron microscopy. It was shown that due to charge accumulation caused by UV irradiation, these photocatalysts retain their oxidative activity and ability for self-sterilization in the dark for a long time after irradiation was terminated (up to 5 h for TiO₂/MoO₃:V₂O₅).     

Annealing study of electrodeposited CuInSe<Subscript>2</Subscript> and CuInS<Subscript>2</Subscript> thin films

In this study CuInSe₂ and CuInS₂ thin films were prepared onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis. The annealing effects on electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe₂/CuInS₂ showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. Mott–Schottky measurements were used to assess the conductivity type of the films and their carrier concentration. The prepared samples underwent an etching process to remove the binary accumulated Cu_2?x(Se,S) phases shown in FESEM pictures. This etching process has shown a noticeable decrease in both, the flat band potential, V_fb (V), and the number of acceptors, N_A (cm^?3) in selenized CuInSe₂ and sulfurized CuInS₂ samples.