Effects of meniscus on the directional growth of potassium niobate single crystals

The study of meniscus effects on the directional growth of single crystals of potassium niobate (KNbO₃) with a [110]_pc oriented seed by the top-seeded-solution-growth technique has been described. The directional growth of KNbO₃ single crystals has been illustrated for different crystallographic orientations of the crystal. Experimental results show that the shape of the solution flux meniscus, which is determined by a number of growth parameters, has a significant effect on growth rates on different 100_pc, 010_pc and 001_pc type surfaces. Findings based on this work enable one to select a dominant growth direction and hence to engineer the geometrical shaping of resultant KNbO₃ single crystals through careful control of growth parameters. Maximum crystal dimensions for the grown KNbO₃ along [100]_pc and [001]_pc achieved in this work are 34.0 and 31.2 mm, respectively.     

Improved growth of PbI2 single crystals

The phase equilibrium and the crystallization process of lead iodide (PbI₂) melt have been primarily investigated according to the lead–iodine phase diagram. It is found that the iodine evaporation and the segregated lead deposition are the two important factors that affect the PbI₂ crystal quality. The new method of Pulling U-type quartz growth ampoule has been made to impede the decomposition of PbI₂ and the vaporization and condensation of iodine. An orange and translucent PbI₂ single crystal of large size was obtained by the improved growth method, i.e. U-type ampoule pulling. Resistivity of the as-grown crystal is up to 4×10¹¹ Ω cm, and IR transmission is up to 45% in the region from 7800 to 450 cm⁻¹. Therefore, the improved growth method is a promising convenient new method for the growth of high quality PbI₂ crystals.     

Ambient-condition growth of superconducting YBa2Cu4O8 single crystals using KOH flux

YBa₂Cu₄O₈ is a stoichiometric oxide superconductor of T_c80 K. Unlike YBa₂Cu₃O_7−δ, this compound is free from oxygen vacancy or twin formation and does not have any microscopic disorder in the crystal. Doping with Ca raises its T_c to 90 K. The compound is a promising superconductor for technological application. Up to now, single crystals have not been grown without using specialized apparatus with extremely high oxygen pressure up to 3000 bar and at over 1100 °C due to the limited range of reaction kinetics of the compound. This fact has delayed the progress in the study of its physical properties and potential applications. We present here a simple growth method using KOH as flux that acts effectively for obtaining high-quality single crystals in air/oxygen at the temperature as low as 550 °C. As-grown crystals can readily be separated from the flux and exhibit a perfect orthorhombic morphology with sizes up to 0.7×0.4×0.2 mm³. Our results are reproducible and suggest that the crystals can be grown using a conventional flux method under ambient condition.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Phase diagram of the SrS–Ga2S3 system and its application to the single-crystal growth of SrGa2S4

Ce-doped SrGa₂S₄ compound is expected as a new host material of blue EL devices. However, the basic properties of bulk single crystals have not been fully clarified, since this compound has been mostly synthesized in the form of polycrystals or thin films. Here, we firstly present the pseudo-binary phase diagram of the SrS–Ga₂S₃ system constructed in accordance with our DTA data for single-crystal growth of SrGa₂S₄. It is shown that SrGa₂S₄ compound has a congruent melting point and a eutectic reaction in the side of excess of Ga₂S₃ concentration. On the basis of the phase diagram, single crystals of SrGa₂S₄ are grown using Ga₂S₃ as a self-flux in a horizontal Bridgman furnace. Colorless and transparent crystals having a typical size 2×2×2 mm³ are obtained.     

Characteristic crystal growth from amorphous WO3 film by vacuum heating

Selective growth of WO₂, W and WO_3−x crystals from amorphous WO₃ film by vacuum heating at 400–900°C was clarified. The grown WO_3−x crystals were incommensurate structure based on crystallographic share structure. The growth process of WO₂ crystal in the amorphous film was directly observed at high temperature in the electron microscope. The growth front of the WO₂ crystal consumes WO₃ microcrystallites with various orientations. The growth speed of the WO₂ depended on WO₃ microcrystallites orientation. The origin of the wavy growth front of WO₂ was due to an orientation dependence of the WO₃ microcrystallites.     

Growth and properties of Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals directly from melt

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by a modified Bridgman method directly from melt using an allomeric Pb[(Mg_1/3Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal as a seed. X-ray diffraction (XRD) measurement confirmed that the as-grown PZNT91/9 single crystals are of pure perovskite structure. Electrical properties and thermal stabilization of PZNT91/9 crystals grown directly from melt exhibit different characters from those of PZNT91/9 crystals grown from flux, although segregation and the variation of chemical composition are not seriously confirmed by X-ray fluorescence analysis (XPS). The [0 0 1]-oriented PZNT91/9 crystals cut from the middle part of the as-grown crystal boules exhibit broad dielectric-response peaks at around 105 °C, accompanied by apparent frequency dispersion. The values of piezoelectric constant d₃₃, remnant polarization P_r, and induced strain are about 1800–2200 pC/N, 38.8 μC/cm², and 0.3%, respectively, indicating that the quality of PZNT crystals grown directly from melt can be comparable to those of PZNT91/9 single crystals grown from flux. However, further work deserves attention to improve the dielectric properties of PZNT crystals grown directly from melt. Such unusual characterizations of dielectric properties of PZNT crystals grown directly from melt are considered as correlating with defects, microinhomogeneities, and polar regions.     

Synthesis, growth and characterization of a new laser upconversion crystal Ba2ErCl7

A modified method to synthesize the new laser upconversion material Ba₂ErCl₇ using Er₂O₃, BaCl₂ 2H₂O and NH₄CI is reported for the first time in this paper. Single crystals up to 5–8mm in diameter and 10–20 mm in length have been grown by Czochralski method. The transmittance spectra of Ba₂ErCl₇ single crystal has first been measured by using an HITACHI U-3500 spectrophotometer. There are three intense absorption peaks ⁴I_9/2⁴I_11/2 and ⁴I_13/2 in the infrared range which can be excited by 803nm, 980nm and 1.5μm laser diodes (LDs), respectively. The cut-off wavelength of the crystal is 230mn. Intense green luminescence can be observed when the crystal is pumped by a ED at 803nm. The formation of the defects is also discussed.     

Flux growth of PbMg1/3Ta2/3O3 single crystals

Single crystals of PbMg_1/3Ta_2/3O₃ (PMT) were grown by the flux method. The PbO–Pb₃O₄–B₂O₃ system was used as a solvent. Transparent and light yellow PMT single crystals of rectangular shape and dimensions up to 10×6×4 mm³ were obtained. For the applied growth conditions only, the crystals of the perovskite structure were grown. X-ray diffraction tests showed that at room temperature PMT exhibits cubic symmetry with lattice parameter a=4.042(1) Å. Dielectric studies pointed to relaxor properties of PMT. The characteristic broad and frequency-dependent maximum of dielectric permittivity was observed at 179.7 K (1 kHz).     

Growth, phase transitions and properties of Li2Ti3O7 crystals

Metastable crystals of Li₂Ti₃O₇ of dimensions up to a diameter of 20 mm and a length of 20 mm have been grown by the Czochralski method from oriented seeds. The effects of seed orientation, growth atmosphere and dopant on crystal growth have been studied. Phase transition processes in the crystals and the H phase structure have been measured. Optical and acoustic properties of the crystals have also been determined.     

Growth and spectroscopic properties of Er single doped and Er–Yb co-doped YAl3(BO3)4 crystals

Er³⁺-doped and Er³⁺–Yb³⁺ co-doped yttrium aluminum borate (YAB) single crystals have been grown by the top-seeded solution growth method using a new flux system, namely NaF–MoO₃–B₂O₃. The Er³⁺ concentrations were 1.3 mol% for both single doped and co-doped crystals and the Yb³⁺ concentration in the Er³⁺–Yb³⁺ co-doped crystal was 20.0 mol% in the raw materials. The distribution coefficients of Er³⁺ single doped and Er³⁺–Yb³⁺ co-doped crystals were measured. The polarized absorption and fluorescence spectra of Er³⁺–Yb³⁺ co-doped crystal were recorded and compared with those of Er³⁺ single doped crystal. The results demonstrate that Er³⁺–Yb³⁺ co-doped YAB crystal is a potential candidate for 1.55 μm laser materials.     

Single-crystal growth of sulphospinel CuIr2S4 from Bi solution

Single crystals of a sulphospinel CuIr₂S₄ have been grown from bismuth solution by a slow cooling method for the first time. The grown crystals have a maximum edge of about 1 mm in size and a mirror-like shining surface. Optimum growth conditions are fairly strict. The specific weight of starting materials for the crystal growth is found to be 0.30 g of CuIr₂S₄ and 10.0 g of Bi in order to obtain good quality crystals. The starting and finishing temperatures for the slow cooling step in the temperature control are 1000 and 500°C. The pertinent cooling rate is 2°C/h. Since the volume of bismuth itself expands in the transition from liquid phase to solid phase, a simple method of separation of the grown crystals from the liquid solution will be proposed for avoiding the mechanical damages to the grown crystals. The single crystals have the normal-spinel structure of the lattice constant a=9.849 Å at room temperature. A step-like anomaly in the susceptibility of the single crystals, corresponding to the metal–insulator transition in the resistivity, occurs much sharply than in the powder specimen.     

Czochralski grown Ga2O3 crystals

We report on the successful growth of β-Ga₂O₃ single crystals using the Czochralski method. Model calculations show that the gas phase consists of Ga₂O, GaO or Ga independent of the ratio of oxygen and Ar or N₂. We find that for growing single crystals the evaporation has to be suppressed by a finite amount of oxygen. A CO₂/Ar gas atmosphere was found to meet this requirement.     

Crystal growth of KTiOPO4 isomorphs from tungstate and molybdate fluxes

Large inclusion-free crystal of KTiOPO₄, RbTiOPO₄, KTiOAsO₄ and RbTiOAsO₄ have been grown from the tungstate and molybdate fluxes. In this paper, we report the typical growth parameters, the solubilities, and the heats of solution (δH_sol) for these crystals, and briefly comment on their optical quality. In addition to being nonvolatile and of low viscosity, the tungstate and the molybdate fluxes also have significantly faster dissolution kinetics than the pure phosphate or arsenate self-flux. This makes them especially versatile for the exploratory crystal growth of the KTP isomorphs and their solid solutions. Using these fluxes, single crystal boules of up to 2.5×3×5 cm³ have been grown from a 250 ml melt. We have also observed a modification in the crystal growth habit, which in the case of KTiOAsO₄, results in the formation of stable, singular {111} faces.     

Controlled growth of Ti4O7 crystals by chemical transport reactions

Ti₄O₇ is a striking example of the difficulties involved in the simultaneous control of crystal growth and composition. In this respect, the usual back-transport step must be avoided because it results to the formation of mixed phases. However, an appropriate H₂ heat treatment can reduce these mixed crystals into single phase single crystals. This result is ascertained by accurate and sensitive physical methods. Finally suitable pulling transport experiments lead to the growth of centimeter long crystals.     

Large-size β-Ga2O3 single crystals and wafers

Large-size single crystals of β-Ga₂O₃ with 1 inc in diameter have been grown by the floating zone technique. The stable growth conditions have been determined by the examination of the crystal structure. Wafers have been cut and fine polished in the (1 0 0), (0 1 0) and (0 0 1) planes. These were highly transparent in the visible and near UV, as well as electrically conductive, indicating the potential use of β-Ga₂O₃ as a substrate for optoelectic devices operating in the visible/near UV and with vertical current flow.     

Growth of pure and RE-doped Y2O3 single crystals by LHPG technique

High-quality and crack-free Y₂O₃ single crystals containing low concentrations of Tm³⁺, Tb³⁺ and Yb³⁺ were obtained. The crystals were grown in the form of monocrystalline fibers by using a floating zone method with laser heating (laser-heated pedestal growth).     

Growth of pyroxene-type MnGeO3 and (Mn,Mg)GeO3 crystals by the floating-zone method

Pyroxene-type solid–solution crystals of (Mn_1−xMg_x)GeO₃ with x=0.06, 0.10 and 0.20 have been grown by the floating-zone method. The end member crystal of MnGeO₃ is broken into small pieces by the orthorhombic-to-monoclonic phase transition during cooling after growth. On the other hand, the solid–solution crystals keep the orthorhombic structure between the melting points and room temperature and no crack is formed. The unit cell volumes are significantly decreased with an increase in Mg content.     

Environmental SEM investigation on surface defects in 0.92Pb(Zn1/3Nb2/3)O3–0.08PbTiO3 single crystal

In this paper, the technique of environmental scanning electron microscopy (ESEM) has been employed to investigate the surface defects of the (1 1 1) appearing face in 0.92Pb(Zn_1/3Nb_2/3)O₃–0.08PbTiO₃ (PZN–8%PT) crystals. From the ESEM images, we succeeded in observing and studying the growth hillocks and etch pits, low-angle grain boundaries, and sub-grain boundaries in (1 1 1) face, which were related to the generation of dislocation and stacking faults, respectively. On the other hand, an image of a unique multi-layer lamellar structure and fine step structure obtained in the (1 1 1) face reveals that the dominant fast growth mechanism of PZN–8%PT crystal grown by the flux method is a sub-step mechanism, unlike the screw dislocation growth mechanism.     

Top-seeded solution growth of LiB3O5

We report on the top-seeded solution growth of LiB₃O₅ from an excess B₂O₃ solution. Parameters investigated include the Li₂O/B₂O₃ ratio, rotation rate, pulling rate, cooling rate, and seed direction. With careful control of the above parameters, we have grown clear crystals of 25 × 30 × 20 mm in size. Selected nonlinear optical properties of these crystals are reported. Observations concerning the occurrence of unstable growth (inclusions, hopper growth) are discussed, and methods to eliminate the unstable growth are suggested.