液氢、液氘冲击压缩特性的理论计算

用液体微扰变分理论,计算了液氢,液氘冲击压缩曲线-计算结果与Nellis实验相一致-计算所得冲击温度比Holmes的实验值明显偏高-对冲击压缩曲线与实验一致,以及冲击温度的计算值明显偏高于实验结果的原因进行了分析- 关键词：     

液氘单次冲击压缩的QMC模拟研究

液氢在较宽压力与温度范围内具有复杂的物理特性,须从分子层面构建精确模型开展探索研究。利用电子-核耦合的CEIMC法模拟液氘单次冲击实验,分析了液氘冲击特性,当压力达50.3GPa时液氘具有最大压缩率4.48,在110GPa冲击压力附近未发现有压缩率急剧增大的迹象。选用合适的Al基板材料模型,建立了液氘单次压缩状态与实验条件间的关系,总结了单次冲击实验规律。得到的状态方程与现有动高压实验结果一致,也与经修正后的100GPa以上压力的Omega激光实验值吻合,说明采用基于共振价键理论的波函数后,CEIMC法可应用于液氘的冲击模拟。     

利用整形激光脉冲压缩薄膜靶得到中子源

研究了整形激光脉冲对冰冻氘氚靶的压缩。通过数值分析,发现利用分步激光产生的系列激波压缩氘氚靶可以获得较高密度和较低温度的等离子体靶。初始激光强度的选取将影响到压缩后的等离子体密度,继而影响到产生中子的数量。通过调节初始激光强度可以使压缩后的氘氚靶温度处在反应率比较高的范围内,从而得到优化结果。当初始归一化激光振幅为0.5,最终为32时,压缩后的氘氚靶密度可达到18416倍的临界密度,温度达到16 keV,每焦耳入射激光能量可得到109个中子,这个中子产额比现有其他方法所得到的中子产额大4个数量级。     

金属冲击温度的辐射法测量问题

 金属的冲击温度及熔化温度测量对构建其完全状态方程具有重要意义。简要综述了用于金属冲击温度及熔化温度辐射法测量的一维热传导理想界面模型和非理想界面模型,并着重对模型中明示或隐含的关键假定的合理性、影响金属冲击温度与熔化温度结果的主要因素进行了分析、讨论,以期对实验数据有一个合理的评估。还讨论了求解理想和非理想界面模型一维热传导方程界面温度时所隐含的冲击压缩下热导率不随温度而变、冲击压缩下金属样品/窗口界面辐射的灰体假定,以及窗口材料的透明性、非理想界面模型中表观界面温度的修正、动载条件下金属高压熔化温度的测量、界面的非Flourier热传导等问题。分析结果表明,目前采用辐射法测量大致可以得到冲击温度,在发生熔化的情况下可获得熔化温度,但离精密测量的要求还有较大差距。     

冲击温度测量中辐射度的数值模拟

 考虑窗口不透明性、界面发射率和热传导等因素对冲击温度测量中辐射度的影响，认为在冲击压缩下窗口不透明性的增大是导致辐射度随时间变化的重要因素。用流体动力学方程、辐射输运方程并计及热传导数值模拟了辐射度，得到了与实验一致的结果。     

稠密氦气物态方程研究

用二级氢气炮作为冲击压缩加载工具和多通道瞬态辐射高温计作为主要测量系统,测量了冲击压缩氦气等离子体的光辐亮度历史（初始温度293K,初始压力为1.2MPa）。根据实测记录信号波形的有关特征量,计算得到了氦等离子体的Hugoniot物态方程（含冲击温度）。结果发现：实测Hugoniot物态方程可用Saha方程加Debye-Huckel修正物理模型解释。     

40-60GPa冲击加载下蓝宝石发光机理研究

利用轻气炮平面波加载技术结合多通道辐射高温计技术以及瞬态光谱技术,在40-60GPa压力区间同时获得了蓝宝石冲击发光的时间分辨光谱和连续波长分布光谱．结果表明,在该压缩区间蓝宝石发光光谱的波长分布具有普朗克灰体分布特征,是一种典型的热辐射现象．辐射色温与该压力区间蓝宝石熔化温度接近,支持剪切带发光观点,认为剪切带的形成可能与蓝宝石单晶的位错和缺陷有关．对冲击压缩蓝宝石的剪切带发光温度接近熔化温度的观点,用一维塑性流的热方程给出了合理的解释．     

氢及氘的宽区物态方程研究进展

氢是自然界最丰富的元素,是天体物理和惯性约束聚变（ICF）研究的重要对象。简要综述了国内外氢及氘宽区物态方程研究进展,特别评述了OMEGA激光装置上的最新冲击压缩 实验和理论模型的对比分析情况。在以往数据分析评估基础上,利用改进的化学自由能模型、第一原理数值模拟结果及多参数物态方程模型,构建了氢的宽区物态方程,适用温度、密度范围分别为20～108 K,10?7～2000 g/cm3。与已有多类实验如冲击压缩实验、静高压等温线实验、声速等实验结果对比表明,新构建的氢宽区物态方程具有较高的置信度,为天体物理、惯性约束聚变、国际热核实验堆等工程物理设计提供高精度的支撑数据。氢宽区物态方程的构建及验证方法亦可适用于其同位素氘,该方法构建的氘宽区物态方程与2019年最新发表的主雨贡纽、二次冲击雨贡纽数据的吻合程度明显优于当前国外模型。指出了未来研究需要关注的状态区域。     

神光Ⅲ激光装置直接驱动内爆靶产生的连续谱X光源

激光驱动的内爆靶通过轫致辐射过程可以产生覆盖1—100 keV能区的小尺寸、短脉冲和高亮度的光滑连续谱X光源,可用于高密度等离子体的点投影照相和吸收谱诊断等.本文对30—180 k J输出能量的神光Ⅲ激光装置直接驱动氘氚冷冻靶产生的连续谱X光源辐射特性进行了模拟研究,为优化内爆光源提供物理基础.采用了美国OMEGA激光装置和美国国家点火装置(NIF)使用的定标率来给出不同驱动能量时的靶参数和激光脉冲参数.研究发现,内爆靶丸在停滞阶段瞬时的密度和温度剧增可以产生尺寸约100μm、发光时间约150 ps的X光脉冲;X光辐射主要产生于被压缩的氘氚冰壳层内侧、而不是中心的高温气体热斑区;等离子体的自吸收可以显著降低1—3 keV的较低能区的X光发射,但对更高能区没有影响;X光辐射主要集中在30 keV的较低能区,氘氚聚变反应可以增强30 keV的硬X光辐射、但对30 keV的较软的X光辐射没有明显贡献.     

轻气炮加载下蓝宝石的辐射光谱特性

冲击压缩过程中透明晶体的发光现象与材料的微观损伤及其结构变化密切相关,利用轻气炮加载结合多通道辐射高温计以及ICCD瞬态光谱测量系统,在400~800nm的可见光波段获得了蓝宝石晶体的发光光谱;研究表明蓝宝石的冲击发光呈典型的热辐射特征,其热辐射温度与该压力下蓝宝石的熔化温度之间存在明显的关联性。最后,结合辐射温度和光谱分布形态研究了蓝宝石剪切带发光的机理。     

Shock compression of deuterium near 100 GPa pressures

The shock-compression curve (Hugoniot) of D2 near 100 GPa pressures (1 Mbar) has been contro-versial because the two published measurements have limiting compressions of fourfold and sixfold. Our purpose is to examine published experimental results to decide which, if either, is probably correct. The published Hugoniot data of low-Z diatomic molecules have a universal behavior. The deuterium data of Knudson et al. (fourfold limiting compression) have this universal behavior, which suggests that Knudson et al. are correct and shows that deuterium behaves as other low-Z elements at high tem-peratures. In D2, H2, N2, CO, and O2, dissociation completes and average kinetic energy dominates average potential energy above approximately 60 GPa. Below approximately 30 GPa, D2, H2, N2, CO, and O2 are diatomic. D2 dissociation is accompanied by a temperature-driven nonmetal-metal transition at approximately 50 GPa.     

Hydrogen interaction with EUVL-relevant optical materials

Mo/Si multilayer mirrors were exposed to deuterium ions with well-defined energies in order to gain insight into the effects of Extreme UV light driven plasma generation on reflective elements in commercial lithography equipment. Post-irradiation analysis by Rutherford Backscattering Spectrometry showed erosion of both Mo and Si layers for the highest energy 50 eV/D and exposure time 5.4 × 10⁴ s. Nuclear Reaction Analysis revealed detectable deuterium retention for energies ⩾25 eV/D. Surface analysis by X-ray Photoelectron Spectroscopy showed erosion of the first Si layer for energies ⩾5 eV/D. Inferences on the spatial distribution of trapped deuterium are made on the basis of available data regarding deuterium retention in the materials in question.     

Investigation of the accumulation of deuterium in carbon-deuterium films from the T-10 tokamak

This paper reports the experimental data obtained on the chemical composition of homogeneous carbon films codeposited with deuterium in the T-10 tokamak, the deuterium distribution over the thickness of the films, and the dependence of the ratio between the atomic concentrations of deuterium and carbon (D/C) on the annealing temperature. The experimental data obtained are compared with the results of similar investigations of carbon-hydrogen films formed in the TFTR tokamak.     

Depth profiling of D implanted into Ti at different temperatures

Depth proliles of 6.6 keV D⁺ implanted into titanium in the temperature range between 140 K and 500 K have been studied using the D(³He, α) H nuclear reaction.

At 140 K the trapped amount is close to 100% at low doses and reaches saturation at about 2 × 10¹⁸D/cm², whereas at room temperature no saturation could be reached up to 2 × 10¹⁹ D/cm². At higher temperatures the amount decreases until no deuterium could be detected in the surface layer above 500 K.

The depth profiles are strongly dependent on temperature. At 140 K the deuterium is found in a surface layer of about 2000 Å with a maximum ratio of deuterium to metal atoms of 2.5. At room temperature a hydride layer of TiD^1.8, forms. The thickness of the hydride layer depends on deuterium dose and extends to 1.5 μm at 2 × 10¹⁹ D/cm². At higher temperatures the atom concentrations are lower and the deuterium seems to diffuse deeply into the bulk.

These results are discussed in terms of diffusion of deuterium i n Ti and titanium hydride.     

Deuterium depth distribution study in Yb

The deuterium depth distribution for a 20 keV/D D_3~+beam implanted into ytterbium(Yb) at a temperature between 300 and 340 K was studied using the D(d,p)T reaction.By analyzing the proton yields,the deuterium depth distribution from the front surface to 500 nm depth was found.The results indicate that an equilibrium deuterium distribution region from the front surface to a depth approximately equal to the mean range of implanted deuterons was formed in Yb during the implantation.The deduced deuterium concentration in the equilibrium deuterium distribution region was D/Yb = 22%.     

�ļ����׼Ƶĺ�뮷ֱ�����ʵ��

利用一套四极质谱气体分析与测试系统,开展MicroVision Plus四极质谱计的氦(He)、氘(D2)分辨性能实验。分别向分析室送入He和D2,记录质谱图,得到质量刻度和分辨率等信息。He+峰位为(4.0022±0.0006)amu;D2+峰位为(4.0246±0.0006)amu。在10-6～10-4Pa的分压范围,观察到He和D2的分辨率随其分压强的增大而减小。在10-7Pa-m3-s-1的He漏孔条件下,调节D2送气量,He+/D2+分压峰值比在10-1量级可以分辨出He。     

The effect of a nitrogen-rich surface layer on the sub-surface deuterium (hydrogen) concentration distribution in titanium

Deuterium and nitrogen depth profiles in Ti with modified surfaces have been measured with Auger electron spectroscopy, secondary ion mass spectroscopy, and D(³He,p)⁴He nuclear reaction analysis. Nitrogen-rich surfaces layers of varying thicknesses were created on Ti by exposure to N₂ gas at 650°C. Deuterium loading was performed by exposure to 1 Torr of D₂ gas at 500°C. The deuterium distribution was influenced by nitrogen in the near-surface regions of all samples. Specifically, deuterium solubility was suppressed in surface regions of high (greater than 1%) nitrogen concentration. The deuterium solubility also remained low within the first few microns, well beyond the region of high nitrogen concentration. This effect is attributed to internal elastic stresses imposed by the non-deuterium absorbing nitrogen-rich layer on the Ti. These stresses prohibit the volume expansion associated with deuterium absorption. We estimate stresses on the order of 3–4 GPa are required to suppress the deuterium solubility to the values observed. The deuterium absorption kinetics were observed to depend systematically on the thickness of the nitrogen-rich layer. This is consistent with limited solubility near the surface or a surface poisoning effect influencing the overall deuterium diffusion from the gas phase into the Ti bulk.     

Effect of carbon on accumulation of deuterium in beryllium irradiated with stationary plasma

Beryllium targets placed in the PLAST beam-plasma discharge facility were irradiated with a flux of stationary deuterium (D) plasma with a deuterium ion energy of 200 eV and plasma flux density of 3 × 10²⁰ m^?2 s^?1 at temperatures of 370 and 670 K. The irradiation doses varied from 5 × 10²¹ to 10²⁴ m^?2. To heat the target and to ionize impurities near its surface the target was irradiated with an electron beam. The deuterium concentration at the target center exceeds its concentration at the periphery by a factor of more than two under all irradiation conditions. The target center was enriched with carbon up to 16–24 at %, as compared to 4–6 at % at the target periphery. The [D]: [Be] atomic concentration ratios at the target center were equal to 0.054 and 0.036 against 0.024 and 0.016 at the periphery at temperatures of 370 and 670 K, respectively. It has been found that these ratios depend on the concentration of carbon atoms which trapped deuterium atoms.     

基于温度梯度的ICF冷冻靶均化技术研究

惯性约束聚变(ICF)冷冻靶中氘氘(D2)、氘氚(DT)等燃料冰层在靶丸中的分布由靶丸所处的温度场决定。在氘氘冷冻靶中,垂直温度梯度引起的气-液界面张力梯度可以抵消重力作用,使氘氘液体在靶丸内均匀分布;然后在氘氘的三相点附近缓慢降温,可以实现燃料冰层的均化。在氘氘冷冻靶均化实验系统上,采用温度梯度结合制冷速率与制冷过程控制的方法,实现了1mm直径、30μm壁厚的辉光放电聚合物(GDP)靶丸中氘氘冰层的均化,对背光阴影图像中亮环位置进行分析表明:氘氘冰层的平均厚度为185.56μm,均匀度为80.2%,模数-功率谱曲线中模数2~100对应的内表面粗糙度为2.26μm。     

The impact of ionic contribution to dielectric permittivity in 11CB liquid crystal and its colloids with BaTiO3 nanoparticles

The European Physical Journal E - Coexistence curves in mixtures of limited miscibility with the lower critical consolute temperature (LCT), of 3-picoline with deuterium oxide (D2O), and D2O/H2O...