Heterodyne performance of a quasioptical Schottky diode detector: Theoretical and experimental results

A detailed theoretical and experimental study of the heterodyne performance of a quasioptical Schottky diode detector is presented. The experimental results have been obtained by mixing the radiation from a FIR laser with the output of a 67–73 GHz Klystron. The heterodyne signal variation versus various parameters and its relation to the special case of two lasers mixing are described. The mixer characteristics are a NEP value of 2×10^–19W/Hz and a detector bandwidth of at least 9 GHz. Experimental evidence of harmonics generation of submillimetric frequencies at the diode junction is also presented.     

Low frequency characteristics of a quasioptical Schottky diode detector part I: Theory

A theoretical study is made of saturation effects of FIR point contacts Schottky diodes when used in the envelope detection mode of operation. A model is described that fits experimental results for radiation wavelength ranging from microwaves down to FIR wavelengths. This model permits the prediction of saturation levels throughout this range.     

Low frequency characteristics of a quasioptical schottky diode detector. Part III: Higher order theory

A higher order theoretical model is presented to describe the behaviour of FIR point contact Schottky diodes for high signal levels and/or high bias currents. This model includes non-linear perturbation on the voltage induced at the Schottky junction. Its fit to experimental results in case of envelope detection is also discussed and compared to the fit determined with our previous non-perturbation theory.     

New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

A new GaN Schottky barrier diode employing a trench structure, which is proposed and fabricated, successfully decreases a forward voltage drop without sacrificing any other electric characteristics. The trench is located in the middle of Schottky contact during a mesa etch. The Schottky metal of Pt/Mo/Ti/Au is e-gun evaporated on the 300 nm-deep trench as well as the surface of the proposed GaN Schottky barrier diode. The trench forms the vertical Au Schottky contact and lateral Pt Schottky contact due to the evaporation sequence of Schottky metal. The forward voltage drops of the proposed diode and conventional one are 0.73 V and 1.25 V respectively because the metal work function (5.15 eV) of the vertical Au Schottky contact is considerably less than that of the lateral Pt Schottky contact (5.65 eV). The proposed diode exhibits the low on-resistance of 1.58 mΩ cm² while the conventional one exhibits 8.20 mΩ cm² due to the decrease of a forward voltage drop.     

The study of the target emissivity and detection using a superconducting detector in the submillimeter wave region

This paper researches mainly the radiation characteristics of the target and detecting techniques by superconducting detector in the submillimeter wave(SMMW) region. The calculation of transition wavelength(TW) between Planck and Rayleigh-Jeans is given out. The experiment of detecting different targets is finished by use of superconducting detector possessing high performances. Through the experiments in paper we can select and determine the wave bands of SMMW detecting and imaging system. The many novel theoretical analyses and experimental results are expressed in Figs and tables of the paper. Finally, a part of calculating results and experimental datum detected by a superconducting detector in SMMW regions are given in this paper.     

太赫兹GaAs肖特基混频二极管高频特性分析

在太赫兹波段,存在几种新的高频效应会限制混频二极管的高频特性.应用热电子发射理论和隧道理论,研究了外延层肖特基二极管的高频特性,并以截止频率为品质因数对二极管进行优化设计.研究表明,当二极管工作频率大于等离子频率时,二极管相当于一个电容,失去了混频性能;提高基底掺杂浓度可以减小基底等离子共振效应;外延层等离子频率非常重要并且在研究外延层等离子共振效应时必须考虑传输时间效应;减小阳极直径、减小外延层厚度、提高外延层掺杂浓度可以提高二极管的工作频率.这对太赫兹波段室温混频器件的研制具有重要的参考价值.     

Calculation of current–voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode

In this study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (II) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current–voltage (I–V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N_ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I–V characteristics range from 2.15 × 10¹³ cm⁻² eV⁻¹ at (E_c − 0.66) eV to 5.56 × 10¹² cm⁻² eV⁻¹ at (E_c − 0.84) eV.     

Sub-Hertz frequency stabilization of a commercial diode laser

We report ultra-stable locking of a commercially available extended cavity diode laser to a vibration-insensitive, high finesse Fabry-Perot cavity. A servo bandwidth of 2 MHz is demonstrated. The individual frequency stability of the diode laser after locking is independently measured with a three-cornered-hat method. The resulting Allan deviation reaches a level of 3 × 10^− 15 at 1 s, even without vibration isolation of the reference cavity.     

Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

In this paper,a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated.The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures,which can be achieved without increasing the process difficulty.The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios,and that by using the semi-SJ structure,specific on-resistance can be reduced without decreasing the softness factor.It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.     

Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

In this paper, a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.     

CSRm束流径向和轴向振荡的耦合

介绍了由于磁铁的安装误差和螺线管的存在而造成的束流径向和轴向的耦合，以及耦合对束流稳定的影响。结合CSRm结构的典型参数分析得出:二极磁铁和四极磁铁在纵向角安装偏差为-0.5~0.5 mrad；有螺线管存在的情况下，工作点落在和共振线时，将导致束流不稳定而大量损失，落在差共振线时，束流稳定。通过模拟计算发现:螺线管产生的耦合远大于磁铁的纵向角安装偏差产生的耦合。     

Edge termination study and fabrication of a 4Hben SiC junction barrier Schottky diode

The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm². A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm² under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm².     

Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.     

Synthesis of n-type boron phosphide films and formation of Schottky diode: Al/n-BP/Sb

Phosphorous rich BP in thin film form was deposited onto fused silica substrates by co-evaporating boron (99.99%) and phosphorous (99.995%) from a tantalum boat and indirectly heated alumina crucible, respectively. Schottky diode structures for n-type BP (Al/n-BP/Sb) were fabricated out of these films. Corresponding current-voltage and capacitance-voltage characteristics of the Schottky diodes were recorded and analyzed in the light of the existing theories.     

Modeling of a millimeter wave planar Schottky diode using both improved equivalent circuit model and 3D-EM model

In this paper, a planar Schottky varistor diode is studied and modeled by equivalent circuit method and three dimensional full wave electromagnetic (3D-EM) method, respectively. The diode's equivalent circuit is extracted from millimeter-wave small-signal S-parameter measurements. Since the package of the diode influences the electromagnetic field distribution at millimeter and sub-millimeter wavelengths, a 3D-EM model and an improved equivalent circuit model is applied to describe the field precisely. The simulated results of equivalent circuit, improved equivalent circuit and 3D-EM model are compared with the measured results. In addition, the effects caused by silver paste conductive adhesive are considered in 3D-EM model and improved equivalent circuit model. The results show that both the 3D-EM model and improved equivalent circuit model have good S-parameter consistency with measured results.     

利用外腔改善半导体激光器列阵的远场特性

采用一个由快轴准直透镜和一个高反射率平面镜组成的简单外腔,在腔长为几个cm时实现了半导体激光器列阵中部分单元的锁相运行;DLA远场出现了3个瓣,每瓣发散角为10 mrad左右,对比度为50%;通过控制部分单元的输出,可以抑制旁瓣的能量.     

Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.     

Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes(SBDs) fabricated on the silicon substrate are investigated. The breakdown voltage(BV) of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the postbreakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm2.     

Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature

We investigated the passivation effects of hydrogen gas on the Au/n-GaAs Schottky barrier diodes in a wide temperature range. Reference diodes were prepared by evaporating barrier metal on semiconductor wafers un-annealed in N₂ gas atmosphere. The other diodes were made by evaporating barrier metal on n-GaAs semiconductor substrates annealed in H₂ atmosphere. Then, electrical measurements of all diodes were carried out by using closed-cycle Helium cryostat by steps of 20 K in the temperature range of 80-300 K in dark. The basic diode parameters such as ideality factor and barrier height were consequently extracted from electrical measurements. It was seen that ideality factors increased and barrier heights decreased with the decreasing temperature. The case was attributed to barrier inhomogeneity at the metal/semiconductor interface. Barrier heights of the diodes made from samples annealed in H₂ gas atmosphere were smaller than those of reference diodes at low temperatures. Here, it was ascribed to the fact that hydrogen atoms passivated dangling bonds on semiconductor surface in accordance with former studies.