具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

MgO/Pt界面对增强Co/Ni多层膜垂直磁各向异性及热稳定性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层和MgO/Pt双底层的Co/Ni多层膜样品, 通过反常霍尔效应研究了不同MgO厚度和退火温度对样品垂直磁各向异性(perpendicular magnetic anisotropy, PMA)的影响. 随着底层中MgO厚度的逐渐增加, 样品的矫顽力也随之增强, 霍尔电阻变化不大; 对样品进行退火处理后发现, 单纯Pt底层的Co/Ni多层膜随着退火温度的升高, 霍尔电阻逐渐降低, 矫顽力则迅速降低, 热稳定性较差; 而当MgO/Pt双底层的样品在200 ℃退火后矫顽力大幅增加, 霍尔电阻略微有所减小, 更高的退火温度使得Co和Ni合金化, 导致多层膜的PMA特征减弱.     

Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)n/FeMn多层膜.研究结果表明,多层膜的垂直交换偏置场Hex和反铁磁层厚度的关系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期数的增加,垂直交换偏置场Hex相应减小,并且与铁磁层的调制周期数近似成反比关系.(Pt/Co)3/FeMn的垂直交换偏置场Hex已经达到22.3kA/m.为了进一步提高Hex,在Co/FeMn的界面插入Pt层,当Pt层厚度为0.4nm时,Hex达到最大值39.8kA/m.     

Pt97.4Mn2.6/Co多层膜的磁性与磁光性质研究

用磁控溅射法制备了Mn含量一定、不同PtMn层厚度的Pt97.4Mn2.6/Co磁性多层膜系列,通过x射线衍射对该多层膜系列进行结构分析;测定了不同PtMn层厚度系列样品的磁滞回线、有效垂直各向异性,分析了饱和磁化强度和有效垂直各向异性变化的原因;通过测定该多层膜体系的克尔谱,分析了一定波长下克尔角随PtMn层厚度变化的规律.认为克尔角的变化是由于界面的合金化以及原子的极化减小所致.     

Pt974Mn26/Co多层膜的磁性与磁光性质研究

用磁控溅射法制备了Mn含量一定、不同PtMn层厚度的Pt974Mn26/Co磁性多层膜系列，通过x射线衍射对该多层膜系列进行结构分析；测定了不同PtMn层厚度系列样品的磁滞回线、有效垂直各向异性，分析了饱和磁化强度和有效垂直各向异性变化的原因；通过测定该多层膜体系的克尔谱，分析了一定波长下克尔角随PtMn层厚度变化的规律.认为克尔角的变化是由于界面的合金化以及原子的极化减小所致. 关键词： 多层膜 磁性 磁光     

Ag和Ti底层对[Fe/Pt]n多层膜有序化的影响

利用磁控溅射的方法，在热玻璃基片上制备了以Ag，Ti，Cu，Cr，Pt和Ta为底层的［Fe/Pt］_n多层膜，后经不同温度真空热处理，得到L1₀有序结构的FePt 薄膜（L1₀-FePt）.实验结果表明，以Ag和Ti为底层，通过采用基片加温，同时 利用［Fe/Pt］_n多层膜结构，可以促进FePt薄膜的有序化过程，使FePt-L1_０有序化温度从500℃降低到350℃.在较高的温度下退火，以Ag为底层对薄膜的磁性 能影响较小，而以Ti为底层在高于500℃退火后，矫顽力明显下降.在400℃退火20min后，以 Ag和Ti为底层的样品平行膜面的矫顽力分别达到597kA/m和645kA/m，剩磁比分别达到0.81和 0.94，为将来FePt-L1_０有序相合金薄膜用于未来超高密度磁记录介质打下基础. 关键词： ０-FePt薄膜')" href="#">L1_０-FePt薄膜 有序化温度 底层 多层膜结构     

磁性多层膜CoFeB/Ni的垂直磁各向异性研究

应用磁控溅射法在玻璃基片上制备了以Pt为底层的CoFeB/Ni多层膜结构样品,通过测试样品的反常霍尔效应研究多层膜的垂直磁各向异性(perpendicular magnetic anisotropy,PMA),对影响多层膜垂直磁各向异性的各因素进行了调制.实验结果表明,多层膜的底层厚度、周期层中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要影响.通过对样品各参数的逐步调制,最终获得了具有良好PMA的CoFeB/Ni多层膜最佳样品Pt(4)/[CoFeB(0.4)/Ni(0.3)]_3/Pt(1.0).经测试计算,该样品的各向异性常数K_(eff)为2.2×10~6erg/cm~3(1 erg/cm~3=10~(-1)J/m~3),具有良好的PMA性能,样品总厚度为7.1 nm,完全满足制备垂直磁结构材料的厚度要求,可进一步研究其在器件中的集成与应用.     

Scattering of conduction electrons in Fe(t x , Å)/Cr(10 Å) superlattices with ultrathin iron layers

IR magnetoreflection spectra, diagonal σ _xx and off-diagonal σ _xy components of the effective optical conductivity tensor, and magnetic properties of Fe(t _x , Å)/Cr(10 Å) superlattices have been studied. The abrupt decrease in the amplitude of dissipative function ?ωImσ _xy (ω) (ω is the cyclic frequency of light wave) in the superlattices with ultrathin Fe layers (t _Fe = 3.2, 2.6, 2.1 Å) has been analyzed. It has been found that the magnetorefractive effect in nanostructures with ultrathin iron layers is due to scattering of conduction electrons by magnetic interfacial layers formed in the Cr matrix with complete consumption of deposited iron atoms. The parameters of the interfacial scattering of electrons in the spin-up (└) and spin-down (┌) conduction channels have been discussed.     

Hopping conduction in the Landau level tails in GaAs-AlxGa1-xAs heterostructures at low temperatures

We have investigated the temperature dependence of the transverse conductivity σ_xx in the two-dimensional Shubnikov—de Haas oscillation minima in GaAs-Al_xGa_1-xAs heterostructures at temperatures between 10mK and 1 K. We found that for σ_xx ? σ_xx (max), where σ_xx (max) is the conductivity in the corresponding oscillation maxima, the results agree qualitatively with a theory recently published by Ono, predicting $\text{σ}{}_{\mathrm{xx}}\text{∝ (1/T) exp - (T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$, but are not consistent with the estimated T₀-values.     

Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields

We report the results of an experimental study of the magnetoresistance ρ_xx and ρ_xy in two samples of p‐Si/SiGe with low carrier concentrations p = 8.2 × 10¹⁰ cm^‐2 and p = 2 × 10¹¹ cm^‐2. The research was performed in the temperature range of 0.3–2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two‐dimensional (2D) channel plane. The large in‐plane magnetoresistance can be explained by the influence of the in‐plane magnetic field on the orbital motion of the charge carriers in the quasi‐2D system. The measurements of ρ_xx and ρ_xy in the tilted magnetic field showed that the anomaly in ρ_xx, observed at filling factor ν = 3/2 is practically nonexistent in the conductivity σ_xx. The anomaly in σ_xx at ν = 2 might be explained by overlapping of the levels with different spins 0 ↑ and 1 ↓ when the tilt angle of the applied magnetic field is changed. The dependence of g‐factor g^*(Θ)/g^*(0⁰) on the tilt angle Θ was determined.     

Magnetization reversal and domains structures in (Co/Ni/Co/Pt) multilayers

Multilayers of [Co/Ni(t_Ni)/Co/Pt]_×4 are investigated for different Ni insertion layer thicknesses. The resulting magnetic properties and magnetic domain structures are compared with [Co/Ni]_×8 multilayers. As determined by magneto-optical Kerr effect microscopy and a vibrating sample magnetometer measurements, all multilayers exhibited a perpendicular magnetic anisotropy. It is found that the nucleation field and magnetic coercivity of [Co/Ni(t)/Co/Pt]_×4 multilayers are lower than (Co/Ni)_×8 and decreased with Ni thickness. Magnetization decay measurements reveal that these multilayers did not show an exponential decay behavior as was observed in rare earth transition metal alloys. Very narrow wires will remain stables for several hours even with an applied magnetic field closer to the coercivity. Insertion of very thin Ni in (Co/Pt) multilayers offers a good way to optimize the magnetic properties of the material and adjust the domain size for nanowire-based devices.     

Electrode reaction at Pt,O2(g)/stabilized zirconia interfaces. Part I: Theoretical consideration of reaction model

This study aims to make clear the reaction kinetics at Pt, O₂(g)/zirconia electrodes in the oxygen partial pressure, P_O2, of ∼ 10⁻⁴ − 1 atm at ∼ 400–∼800°C. By a critical review on the preceding studies, problems were pointed out in the application of the Langmuir adsorption isotherm to the P_O2 dependence of electrode conductance, in the assumption of electric double layer at the electrode interface, and of the inconsistency between the recent reaction model of surface diffusion controlled kinetics and the absolute rate theory. It was shown that the charge transfer kinetics cannot be the rate determining step (RDS) of the electrode reaction. The possible RDS was concluded to be either (i) dissociative adsorption of oxygen molecules on the Pt surface or (ii) surface diffusion of O_ad atoms on the Pt surface to the Pt/zirconia contact. The diffusion of O_ad atoms on the Pt surface was considered to be proportional to θ(1−θ)(∂μ_O/∂x), where θ is the occupancy of O_ad atoms on Pt and μ_O is the oxygen chemical potential on the Pt surface. The rate equation, current-potential relationship, and the electrode conductivity, σ_E, were calculated for the cases the RDS is (i) and (ii), respectively. By comparing the calculated σ_E versus log P_O2 relationship with the reported ones, it was shown that the RDS is (i) for T ≲ 500°C and is (ii) for T ≳ 600°C. In the former case, σ_E is essentially constant irrespective to P_O2, and in the latter case, σ_E maximum appears on the σ_E versus log P_O2 relations.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.     

Superionic transitions and conductivity anisotropy in Na4.6FeP2O8.6F0.4 single crystals

The cation conductivity in the directions parallel (σ_‖[001]) and perpendicular (σ_⊥[001]) to the [001] crystallographic direction of Na_4.6FeP₂O_8.6F_0.4 single crystals has been investigated at 293–734 K. The specific features of the ionic conductivity have been studied near two phase transitions at T _{tr, 1} ～ 450 K and T _{tr, 2} ～ 545 K. At T = T _{tr, 1}, the activation enthalpy for the dependences σ_‖[001](T) and σ_⊥[001](T) decreases from 0.45 ± 0.01 to 0.33 ± 0.02 eV, and the σ_‖[001](T) curve has a jump of the ionic conductivity by a factor of almost two at T = T _{tr, 2}; the jump is related to a manifestation of commensurate modulation of the crystal structure. In the Na_4.6FeP₂O_8.6F_0.4 crystals, the ionic transport is anisotropic with the ratio σ_‖[001]/σ_⊥[001] = 7.7, 5.2, and 6.6 at 293 K (T < T _{tr, 1}), 500 K (T _{tr, 1} < T < T _{tr, 2}), and 700 K (T < T _{tr, 2}), respectively. The mechanism of cation conductivity in the Na_4.6FeP₂O_8.6F_0.4 crystals is discussed.     

(Pt3Co)1-xNix合金薄膜的结构、磁性和磁光特性研究

采用直流溅射的方法,在Pt₃Co合金靶上加贴Ni片,把（Pt₃Co)_1-xNi_x合金薄膜中非磁性原子与磁性原子的比率从3：1调制到1：1.通过高角X射线衍射谱和磁性的研究,发现<111>织构至少在0.33—0.50的Ni成分范围内不是引起垂直磁各向异性的主要原因.在此基础上研究了(Pt₃Co)_1-xNi_x合金薄膜的磁光特性.研究表明,适量Ni合金化（x=0.43)可以获得较低的(Pt₃Co)_1-xNi_x合金薄膜居里温度,同时保持较高的垂直磁各向异性、较大的矫顽力和蓝波长下较高的Kerr转角,从而为PtCoNi合金薄膜的实用化提供了实验参考. 关键词：     

Li2Mo2O6多晶材料的结构与电性能的研究

本文用固相反应烧结制备出Li₂Mo₂O₆多晶材料。经X射线分析、红外光谱和电子顺磁共振谱(EPR)的研究,确定了它的结构是Li₂Mo₂O₄和MoO₂两个晶相组成的烧结体。钼离子以四价状态存在于MoO₂晶相结构中。采用交流阻抗谱分析了晶界与温度变化的相关性。测得了样品的ln(σ_总T)-1/T 曲线是由两段直线和一段曲线所组成;总电导率化能σ_27℃=1.36×10^-3(Ω·cm)^-1,σ_115℃=1.49×10^-3(Ω·cm)^-1,σ_300℃=9.71×10^-3(Ω·cm)^-1,σ_370℃=2.42×10^-3(Ω·cm)^-1;电导活化能E₁=0.043eV,E₂=0.235eV,E_平均=0.76eV。采用维格纳极化电池法测得电子电导率σ_e,σ_e27℃=2.240×10^-5(Ω·cm)^-1,σ_e300℃=4.476×10^-3(Ω·cm)^-1。实验证明,室温下材料为固体电解质,300℃附近为良好的离子与电子混合导体。 关键词：     

Thermal conductivity of fluids with steeply repulsive potentials

We consider the thermal conductivity of steeply repulsive inverse power fluids (SRP) in which the particles interact with a pair potential, φ(r) = ε(σ/r)ⁿ. The time correlation function for the heat flux, C_λ(t), and the time average, C_λ(0) are calculated numerically by molecular dynamics simulations, and accurate expressions for these are also derived for the SRP fluid. We show, by molecular dynamics simulations, that close to the hard-sphere limit this time correlation function has the same analytic form as for the shear and pressure correlation functions for the shear and bulk viscosity, i.e. C_λ(t)/C_λ(0) = 1 ?T* (nt*)² + 0((nt*)⁴), where T* = k _B T/ε, is the reduced temperature, k _B is Boltzmann's constant and t* = (ε/σ²)^1/2 t is the reduced time. The thermal conductivity for the limiting case of hard spheres is numerically very close to that given by the traditional Enskog relation. At low densities the normalized relaxation times are typically largest for the thermal conductivity, followed by shear and then bulk viscosity. Close to the maximum fluid density, the latter two increase rapidly with density (especially for the shear) but continue a monotonic decline for the thermal conductivity. This reflects the relative insensitivity of the thermal conductivity to the approach to the fluid-solid phase boundary.