Rapid One‐Step Synthesis and Compaction of High‐Performance n‐Type Mg3Sb2 Thermoelectrics

n‐type Mg₃Sb₂‐based compounds have emerged as a promising class of low‐cost thermoelectric materials due to their extraordinary performance at low and intermediate temperatures. However, so far, high thermoelectric performance has merely been reported in n‐type Mg₃Sb₂‐Mg₃Bi₂ alloys with a large amount of Bi. Moreover, current synthesis methods of n‐type Mg₃Sb₂ bulk thermoelectrics involve multi‐step processes that are time‐ and energy‐consuming. Herein, we report a fast and straightforward approach to fabricate n‐type Mg₃Sb₂ thermoelectrics using spark plasma sintering, which combines the synthesis and compaction in one step. Using this method, we achieve a high thermoelectric figure of merit zT of about 0.4–1.5 at 300–725 K in n‐type (Sc, Te)‐co‐doped Mg₃Sb₂ without alloying with Mg₃Bi₂. In comparison with the currently reported synthesis methods, the complexity, process time, and cost of our method are significantly reduced. This work demonstrates a simple, low‐cost route for the potential large‐scale production of n‐type Mg₃Sb₂ thermoelectrics.     

Rapid One-Step Synthesis and Compaction of High-Performance n-Type Mg3Sb2 Thermoelectrics

n-type Mg₃Sb₂-based compounds have emerged as a promising class of low-cost thermoelectric materials due to their extraordinary performance at low and intermediate temperatures. However, so far, high thermoelectric performance has merely been reported in n-type Mg₃Sb₂-Mg₃Bi₂ alloys with a large amount of Bi. Moreover, current synthesis methods of n-type Mg₃Sb₂ bulk thermoelectrics involve multi-step processes that are time- and energy-consuming. Herein, we report a fast and straightforward approach to fabricate n-type Mg₃Sb₂ thermoelectrics using spark plasma sintering, which combines the synthesis and compaction in one step. Using this method, we achieve a high thermoelectric figure of merit zT of about 0.4–1.5 at 300–725 K in n-type (Sc, Te)-co-doped Mg₃Sb₂ without alloying with Mg₃Bi₂. In comparison with the currently reported synthesis methods, the complexity, process time, and cost of our method are significantly reduced. This work demonstrates a simple, low-cost route for the potential large-scale production of n-type Mg₃Sb₂ thermoelectrics.     

One-step conversion of Mg2Si into hydrogen-terminated porous silicon nanostructures

A simple, fast, and low-cost acid-treatment method is proposed for the conversion of magnesium silicide (Mg₂Si) into hydrogen-terminated mesoporous silicon nanostructured material (M-pSi). The formation of porosity in M-pSi is attributed to the generation of gas species during the acid treatment, providing a large number of active sites. The adsorption and the photocatalytic performances of M-pSi toward the degradation of methyl orange are investigated. It is found that the mesoporous Si material exhibits an unusual and high photocatalytic ability toward the dye degradation in acidic conditions, outperforming the performance of commercially available Si nanoparticles. This unusual photocatalytic performance is related to the presence of hydrogen-terminated silicon nanostructures with a high surface area of 203 m²/g. The article proposes an alternative way of producing porous silicon materials with enhanced photocatalytic activity.     

镁热还原气相法白炭黑制备纳米硅及其电化学性能

以气相法白炭黑(FS)为Si前驱体,通过镁热还原工艺和对获得的NPs-Si进行SiOx和C复合包覆,制备出NPs-Si@SiOx@C纳米复合结构,将其用作锂电池负极进行电化学性能测试。研究结果表明:镁热还原过程分两步进行,即SiO_2与Mg先生成Mg2Si中间相,Mg2Si继续与SiO_2反应生成Si的反应路径;根据此规律镁热还原气相法白炭黑的Si转化率达87.9%。电化学性能测试中NPs-Si@SiOx@C负极在2.0 A·g-1的电流密度下有1 300 mAh·g-1的容量平台,1 000次循环后的放电比容量为964.2mAh·g-1,容量保持率达75%。     

Thermoelectricity Generation and Electron–Magnon Scattering in a Natural Chalcopyrite Mineral from a Deep‐Sea Hydrothermal Vent

Current high‐performance thermoelectric materials require elaborate doping and synthesis procedures, particularly in regard to the artificial structure, and the underlying thermoelectric mechanisms are still poorly understood. Here, we report that a natural chalcopyrite mineral, Cu_1+xFe_1?xS₂, obtained from a deep‐sea hydrothermal vent can directly generate thermoelectricity. The resistivity displayed an excellent semiconducting character, and a large thermoelectric power and high power factor were found in the low x region. Notably, electron–magnon scattering and a large effective mass was detected in this region, thus suggesting that the strong coupling of doped carriers and antiferromagnetic spins resulted in the natural enhancement of thermoelectric properties during mineralization reactions. The present findings demonstrate the feasibility of thermoelectric energy generation and electron/hole carrier modulation with natural materials that are abundant in the Earth’s crust.     

Achieving band convergence by tuning the bonding ionicity in n-type Mg3Sb2

Identifying strategies for beneficial band engineering is crucial for the optimization of thermoelectric (TE) materials. In this study, we demonstrate the beneficial effects of ionic dopants on n-type Mg₃Sb₂. Using the band-resolved projected crystal orbital Hamilton population, the covalent characters of the bonding between Mg atoms at different sites are observed. By partially substituting the Mg at the octahedral sites with more ionic dopants, such as Ca and Yb, the conduction band minimum (CBM) of Mg₃Sb₂ is altered to be more anisotropic with an enhanced band degeneracy of 7. The CBM density of states of doped Mg₃Sb₂ with these dopants is significantly enlarged by band engineering. The improved Seebeck coefficients and power factors, together with the reduced lattice thermal conductivities, imply that the partial introduction of more ionic dopants in Mg₃Sb₂ is a general solution for its n-type TE performance. © 2019 Wiley Periodicals, Inc.     

Highly Porous Thermoelectric Nanocomposites with Low Thermal Conductivity and High Figure of Merit from Large‐Scale Solution‐Synthesized Bi2Te2.5Se0.5 Hollow Nanostructures

To enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ ) and excellent figure of merit (z T ). Herein we report a scalable (ca. 11.0 g per batch) and low‐temperature colloidal processing route for Bi₂Te_2.5Se_0.5 hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm×h 10 mm) with low κ (0.48 W m⁻¹ K⁻¹) and the highest z T (1.18) among state‐of‐the‐art Bi₂Te_3−x Se_x materilas. Additional benefits of the unprecedented low relative density (68–77 %) are the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase‐transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields.     

Potential of Chevrel phases for thermoelectric applications

A low lattice thermal conductivity is one of the requirements to achieve high thermoelectric figures of merit. Several low thermal conductivity materials were identified and developed over the past few years at the Jet Propulsion Laboratory (JPL), including filled skutterudites and Zn₄Sb₃-based materials. A study of the mechanisms responsible for the high phonon scattering rates in these compounds has demonstrated that materials with structures that can accommodate additional atoms in their lattice are likely to possess low lattice thermal conductivity values. Chevrel phases (Mo₆Se₈-type) are just such materials and are currently being investigated at JPL for thermoelectric applications. The crystal structures of the Chevrel phases present cavities which can greatly vary in size and can contain a large variety of atoms ranging from large ones such as Pb to small ones such as Cu. In these materials, small inserted atoms usually show large thermal parameters which indicate that they move around and can significantly scatter the phonons. The electronic and thermal properties of these materials can potentially be controlled by a careful selection of the filling element(s). We have synthesized (Cu, Cu/Fe, Ti)_xMo₆Se₈ samples and report in this paper on their thermoelectric properties. Approaches to optimize the properties of these materials for thermoelectric applications are discussed. Solid State Sciences, 1293-2558/99/7-8/© 1999 Éditions scientifiques et médicales Elsevier SAS. All rights reserved.     

Excellent Room-Temperature Thermoelectricity of 2D GeP3: Mexican-Hat-Shaped Band Dispersion and Ultralow Lattice Thermal Conductivity

Although some atomically thin 2D semiconductors have been found to possess good thermoelectric performance due to the quantum confinement effect, most of their behaviors occur at a higher temperature. Searching for promising thermoelectric materials at room temperature is meaningful and challenging. Inspired by the finding of moderate band gap and high carrier mobility in monolayer GeP_3, we investigated the thermoelectric properties by using semi-classical Boltzmann transport theory and first-principles calculations. The results show that the room-temperature lattice thermal conductivity of monolayer GeP₃ is only 0.43 Wm⁻¹K⁻¹ because of the low group velocity and the strong anharmonic phonon scattering resulting from the disordered phonon vibrations with out-of-plane and in-plane directions. Simultaneously, the Mexican-hat-shaped dispersion and the orbital degeneracy of the valence bands result in a large p-type power factor. Combining this superior power factor with the ultralow lattice thermal conductivity, a high p-type thermoelectric figure of merit of 3.33 is achieved with a moderate carrier concentration at 300 K. The present work highlights the potential applications of 2D GeP₃ as an excellent room-temperature thermoelectric material.     

有序介孔硅包碳复合结构的制备及其储锂行为

以P123嵌段模板法合成SiO2-有序介孔(SiO2-OMPs)短棒状结构,以此为前驱体通过镁热还原和酚醛树脂碳包覆处理,成功制备出有序介孔硅/碳复合结构(Si/C-OMPs),用于锂离子电池负极材料测试。从扫描电镜图(SEM)和透射电图(TEM)观察发现,SiO2-OMPs形态可以通过HCl溶液浓度有效调控,在高浓度下获得高堆积密度的粒状有序介孔结构,并在镁热还原和碳包覆处理后这种有序介孔结构均得到完美保持。X射线衍射(XRD)数据的分析表明,镁热还原反应包括两步串连反应:Mg和SiO2先反应形成Mg2Si中间相,而后该相再还原剩余SiO2并获得终产物Si。第二步反应属于缓慢的固/固扩散过程,抑制了整个还原反应的完成,导致Si产率低且存在杂质相。电化学测试表明,由于其坚固的结构和畅通的介孔系统,有序介孔Si/C复合结构具有优异的循环稳定性和倍率性能。     

TiS2原子薄膜厚度对其热电性质影响的理论研究

本文采用玻尓兹曼输运方程与密度泛函计算相结合的方法,理论研究了薄膜厚度对二维TiS₂原子薄膜热电性能的影响。随着厚度的减小,薄膜的能带变平,电子有效质量增大而群速度减小,这造成了塞贝克系数的增大和电导率的减小。而且,薄膜的功率因子及最优载流子浓度也随厚度的减小而减小。我们讨论了薄膜功率因子减小的物理机制,并与其他二维体系的实验结果进行了比较分析。     

TiS_2原子薄膜厚度对其热电性质影响的理论研究

本文采用玻尓兹曼输运方程与密度泛函计算相结合的方法,理论研究了薄膜厚度对二维TiS2原子薄膜热电性能的影响。随着厚度的减小,薄膜的能带变平,电子有效质量增大而群速度减小,这造成了塞贝克系数的增大和电导率的减小。而且,薄膜的功率因子及最优载流子浓度也随厚度的减小而减小。我们讨论了薄膜功率因子减小的物理机制,并与其他二维体系的实验结果进行了比较分析。     

Sol–gel synthesis of sodium and lithium based materials

Sodium and lithium cobaltates are important materials for thermoelectric and battery applications due to their large thermoelectric power and ability to (de-) intercalate the alkali metal. For these applications, phase pure materials with controlled microstructure are required. We report on the sol?Cgel synthesis of sodium- and lithium-based materials by using acetate precursors. The produced Na_2/3CoO₂, Li(Ni_1/3Mn_1/3Co_1/3)O₂, and Li(Ni_1/2Co_1/2)O₂ powders are phase pure with grain sizes below 1???m. X-ray diffraction and energy-dispersive spectral analyses show that the cation stoichiometry is preserved in the lithium-based compounds. Despite the low temperatures, the sodium content is reduced by 1/3 as compared to the initial value. Chemical phases of the investigated powders are formed in the sol?Cgel route at temperatures typically 100?C200?K lower than those used in the conventional solid-state synthesis of these materials. The suggested sol?Cgel synthesis is a low temperature process suited for production of phase pure and homogeneous materials with volatile cations.     

Design Strategies of Si/C Composite Anode for Lithium-Ion Batteries

Silicon-based materials that have higher theoretical specific capacity than other conventional anodes, such as carbon materials, Li₂TiO₃ materials and Sn-based materials, become a hot topic in research of lithium-ion battery (LIB). However, the low conductivity and large volume expansion of silicon-based materials hinders the commercialization of silicon-based materials. Until recent years, these issues are alleviated by the combination of carbon-based materials. In this review, the preparation of Si/C materials by different synthetic methods in the past decade is reviewed along with their respective advantages and disadvantages. In addition, Si/C materials formed by silicon and different carbon-based materials is summarized, where the influences of carbons on the electrochemical performance of silicon are emphasized. Lastly, future research direction in the material design and optimization of Si/C materials is proposed to fill the current gap in the development of efficient Si/C anode for LIBs.     

Determination of the interface band alignment of Mg2Si/4H-SiC heterojuction for potential photodetector application

The Mg₂Si/4H-SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X-ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg₂Si (0.78 eV) and 4H-SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg₂Si/4H-SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type-I band alignment. The Mg₂Si/4H-SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.     

Structural and physical properties of Mg3−xZnxSb2 (x=0-1.34)

The Mg_3−xZn_xSb₂ phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg_3−xZn_xSb₂ phases crystallize in the same P3¯m1 space group as the parent Mg₃Sb₂ phase. The Mg_3−xZn_xSb₂ structure is different from the other substituted structures of Mg₃Sb₂, such as (Ca, Sr, Ba) Mg₂Sb₂ or Mg_5.23Sm_0.77Sb₄, in a way that in Mg_3−xZn_xSb₂ the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg₃Sb₂ and Mg_2.36Zn_0.64Sb₂, was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg₃Sb₂ which is a semiconductor, Mg_2.36Zn_0.64Sb₂ is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg_2.36Zn_0.64Sb₂ is still poor and it is mostly due to its large electrical resistivity.     

Detailed Structural Examinations of Covalently Immobilized Gold Nanoparticles onto Hydrogen‐Terminated Silicon Surfaces

The modification of flat semiconductor surfaces with nanoscale materials has been the subject of considerable interest. This paper provides detailed structural examinations of gold nanoparticles covalently immobilized onto hydrogen‐terminated silicon surfaces by a convenient thermal hydrosilylation to form Si? C bonds. Gold nanoparticles stabilized by ω‐alkene‐1‐thiols with different alkyl chain lengths (C₃, C₆, and C₁₁), with average diameters of 2–3 nm and a narrow size distribution were used. The thermal hydrosilylation reactions of these nanoparticles with hydrogen‐terminated Si(111) surfaces were carried out in toluene at various conditions under N₂. The obtained modified surfaces were observed by high‐resolution scanning electron microscopy (HR‐SEM). The obtained images indicate considerable changes in morphology with reaction time, reaction temperature, as well as the length of the stabilizing ω‐alkene‐1‐thiol molecules. These surfaces are stable and can be stored under ambient conditions for several weeks without measurable decomposition. It was also found that the aggregation of immobilized particles on a silicon surface occurred at high temperature (> 100 °C). Precise XPS measurements of modified surfaces were carried out by using a Au–S ligand‐exchange technique. The spectrum clearly showed the existence of Si? C bonds. Cross‐sectional HR‐TEM images also directly indicate that the particles were covalently attached to the silicon surface through Si? C bonds.     

Negative Refraction in the Visible and Strong Plasmonic Resonances in Photonic Structures of the Electride Material Mg2N

Natural hyperbolic materials have recently attracted great attention due to their capability of supporting spatial mode frequency much higher than artificial metamaterials and the advantage that they do not require nanofabrication processes. For practical applications, however, hyperbolic bulk materials with lower optical losses in shorter wavelength range should be developed. This work presents the electronic structure and dielectric response of an electride Mg₂N, revealing that this material exhibits hyperbolic responses with low optical loss in the visible and plasmonic responses with high-quality in the near-infrared range. Negative refraction in the red spectral range has been analytically and numerically demonstrated. In particular, nanoantenna structures of Mg₂N generate strong plasmonic resonances in the near-infrared and the intensity enhancement in the gap region is one order of magnitude higher compared with silver nanoantenna due to its much higher quality factor, which can find potential applications for nanoplasmonic purposes such as single molecule detections by surface-enhanced hyper-Raman spectroscopy and nonlinear wavelength generations at the nanoscale.     

Preparation and hydrogen storage properties of nanostructured Mg2Cu alloy

We successfully synthesized Mg₂Cu alloys from the metal nanoparticles, which are produced from hydrogen plasma-metal reaction method, in two ways. One is under 0.1 MPa argon at 673 K and the other is under 4.0 MPa hydrogen at 673 K. The structure, morphology and reaction mechanism were studied. The hydrogen absorption and the pressure-composition isotherm properties of the obtained Mg₂Cu alloy under hydrogen were studied. The van’t Hoff equation and the formation enthalpy and entropy of the resulting hydride (MgH₂+MgCu₂) were obtained from the equilibrium plateau pressures of the desorption isotherms. Nanostructured Mg₂Cu shows excellent hydrogen storage properties because nanostructured materials have more surface area and more defects, which means more nucleation sites with hydrogen, and smaller particles, which means shorter diffusion distance for hydrogen in the alloys particles.     

Modulating the thermoelectric transport properties of the novel material Er2Te3 via strain

The rare-earth chalcogenide Er₂Te₃, characterized by its low lattice thermal conductivity, represents a highly promising and innovative thermoelectric material. However, there have been limited studies exploring its thermoelectric properties in depth. Additionally, it has been discovered that strain engineering is an effective method for enhancing thermoelectric properties, a technique successfully applied to relevant materials. In this study, we employed a first-principles approach in conjunction with the semi-classical Boltzmann transport theory to investigate the thermoelectric properties of Er₂Te₃ materials under −4% to 4% strain. The results indicate that applying compressive strain modulates thermoelectric properties more effectively than tensile strain for Er₂Te₃. Under strain modulation, the maximum power factor for both p-type and n-type Er₂Te₃ increases significantly, from 0.9 to 2.5 mW m⁻¹ K⁻² and from 14 to 18 mW m⁻¹ K⁻² at 300 K, respectively. Moreover, the figure of merit (ZT) for p-type and n-type Er₂Te₃ improves notably, from 0.15 to 0.25 and from 1.15 to 1.35, respectively, under −4% strain. Consequently, the thermoelectric properties of Er₂Te₃ materials can be significantly enhanced through strain application, with n-type Er₂Te₃ demonstrating substantial potential as a thermoelectric material.