The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

High quality epitaxial ZnO films were grown on c-Al₂O₃ substrates with Cr₂O₃ buffer layer by plasma-assisted molecular beam epitaxy (P-MBE). The hexagonal crystalline Cr₂O₃ layer was formed by oxidation of the Cr-metal layer deposited on the c-Al₂O₃ substrate using oxygen plasma. The epitaxial relationship was determined to be ZnO//Cr₂O₃//Cr//Al₂O₃ and ZnO//Cr₂O₃//[0 0 1]Cr//Al₂O_3. The Cr₂O₃ buffer layer was very effective in improving the surface morphology and crystal quality of the ZnO films. The photoluminescence spectrum showed the strong near band-edge emissions with the weak deep-level emission, which implies high optical quality of the ZnO films grown on the Cr₂O₃ buffer.     

Change in band configuration of quantum wells from type-II to type-I by increasing Sb composition x

InGaAs/AlAsSb systems lattice matched to InP have two distinguishable features: a high conduction band offset and type-II band configuration. Although, the former results in a large intersubband transition (ISBT) at conduction band, the latter makes it difficult to use the effective interband transition (IBT). To overcome this latter problem, the effect of the Sb was investigated because Sb would act as a band modulator from type-II to type-I. In_0.57Ga_0.43As_1-xSb_x/AlAs_0.48Sb_0.52 single quantum well (SQW) samples with various Sb compositions x, were grown on GaAs substrates via AlAs_0.48Sb_0.52 buffer layer. Their photoluminescence (PL) properties were examined to identify their band configurations. When the excitation laser power was increased, the PL property of In_0.57Ga_0.43As SQW sample, showed a larger blue shift than that of ones. This indicates that the band configuration modulates from type-II to type-I when the antimonide composition is larger than 0.13. These findings indicate that new functional devices can be fabricated using a combination of IBT and ISBT.     

Atomic layer deposition and characterization of Ga-doped ZnO thin films

Low-resistivity n-type ZnO thin films were grown by atomic layer deposition (ALD) using diethylzinc (DEZ) and H₂O as Zn and O precursors. ZnO thin films were grown on c-plane sapphire (c- Al₂O₃) substrates at 300 C. For undoped ZnO thin films, it was found that the intensity of ZnO () reflection peak increased and the electron concentration increased from 6.8×10¹⁸ to 1.1×10²⁰ cm⁻³ with the increase of DEZ flow rate, which indicates the increase of O vacancies () and/or Zn interstitials (Zn_i). Ga-doping was performed under Zn-rich growth conditions using triethylgallium (TEG) as Ga precursor. The resistivity of 8.0×10⁻⁴ Ω cm was achieved at the TEG flow rate of 0.24 μmol/min.     

Ordered zinc-vacancy induced Zn0.75Ox nanophase structure

Using transmission electron microscopy, a new nano-phase structure of Zn_0.75O_x induced by Zn-vacancy has been discovered to grow on wurtzite ZnO nanobelts. The superstructure grows epitaxial from the surface of the wurtzite ZnO nanobelts and can be fitted as an orthorhombic structure, with lattice parameters a′=2a, and c′=c, where a and c are the lattice parameters of ZnO. The superstructured phase is resulted from high-density Zn vacancies orderly distributed in the ZnO matrix. This study provides direct observation about the existence of Zn-vacancies in ZnO.     

Conductivity increase of ZnO:Ga films by rapid thermal annealing

Due to a constant increase in demands for transparent electronic devices the search for alternative transparent conducting oxides (TCO) is a major field of research now. New materials should be low-cost and have comparable or better optical and electrical characteristics in comparison to ITO. The use of n-type ZnO was proposed many years ago, but until now the best n-type dopant and its optimal concentration is still under discussion. Ga was proposed as the best dopant for ZnO due to similar atomic radius of Ga³⁺ compared to Zn²⁺ and its lower reactivity with oxygen. The resistivity ρ of ZnO:Ga/Si (100) films grown by PEMOCVD was found to be 3×10⁻² Ω cm. Rapid thermal annealing (RTA) was applied to increase the conductivity of ZnO:Ga (1 wt%) films and the optimal regime was determined to be 800  C in oxygen media for 35 s. The resistivity ratio before and after the annealing and the corresponding surface morphologies were investigated. The resistivity reduction () was observed after annealing at optimal regime and the final film resistivity was approximately ≈4×10⁻⁴ Ω cm, due to effective Ga dopant activation. The route mean square roughness (R_q) of the films was found to decrease with increasing annealing time and the grain size has been found to increase slightly for all annealed samples. These results allow us to prove that highly conductive ZnO films can be obtained by simple post-growth RTA in oxygen using only 1% of Ga precursor in the precursor mix.     

First-principles calculation on p-type conduction of (Sb,N) codoping in ZnO

Based on first-principles calculations, (Sb, N) codoped ZnO are investigated. We find that Sb_Zn–4N_O have lower formation energy and can form p-type conduction with smaller hole effective mass. In comparation to monodoping of Sb, Sb_Zn–4N_O complex can form better p-type conductivity than Sb_Zn–2V_Zn, which may be strongly compensated by Sb_Zn defect and result in a decrease of p-type conduction. So we inferred that (Sb, N) codoping in ZnO under O-poor condition should be a realizable candidate of p-type conduction.     

Measurement of ultraweak transitions in the visible region of molecular oxygen

A highly sensitive cavity-enhanced frequency modulation spectroscopy technique has been used to measure ultraweak transitions in molecular oxygen that had not previously been characterized. The self-broadened half-width and line intensity of the measured transitions are reported. We include 12 high J transitions in the band of ¹⁶O₂ (the so-called A band), 59 transitions in the hot band of ¹⁶O₂, and 17 high J transitions in the band of ¹⁶O¹⁸O. Our measurements of line positions of the ¹⁶O¹⁸O transitions are used to determine improved molecular constants for the excited state of ¹⁶O¹⁸O.     

Electrical characterization of strontium tartrate single crystals

The a.c. and d.c. conductivity of SrC₄H₄O₆·3H₂O are measured and are found to lie between usual conductivities of semiconductor and insulator. Temperature dependence of d.c. conductivity shows intrinsic conduction, which is confirmed by the slope of versus data. Due to application of thermal energy, noticeable conductivity peaks imply liberation of water molecules during dehydration and the formation of strontium oxalate. The conductivity plot has a nature similar to the intrinsic-to-extrinsic transition found in normal semiconductors. There occurs Efros hopping conduction in our samples.     

Structural characterization and electrical properties of quaternary CdGaInSe4 thin films

Stoichiometric bulk ingot material of the quaternary CdGaInSe₄ was prepared by direct fusion of the constituent elements in vacuum-sealed silica tubes. Nearly stoichiometric films could be deposited by thermal evaporation of the ingot material in 10⁻³ Pa vacuum at a deposition rate 1.5 nm/s. Crystal structure investigation was carried out using X-ray diffractometry and transmission electron diffraction. Elemental composition was determined by means of energy-dispersive X-ray spectrometry. CdGaInSe₄ possesses a tetragonal defective chalcopyrite structure (space group ) with lattice parameters a=0.5665 nm and c=1.1221 nm. All the films exhibited n-type conduction and ohmic behaviour with metallic films of Au, Cd, In, Ag and Sb. However, in the case of Al a nonlinear behaviour occurs. Analysis of the temperature dependence of the dark conductivity in the range 130-470 K has revealed three operating conduction mechanisms; a variable range hopping conduction process dominating at low temperatures below 270 K, followed by a transport of the charge carriers across intercrystalline barriers and grain boundaries in the temperature range 270-353 K, and finally an extrinsic conduction above 353 K.     

Hydrothermal synthesis of ZnO nanobelts and gas sensitivity property

The ZnO nanobelts were synthesized by a hydrothermal method. The XRD spectrum indicates that the sample is wurtzite (hexagonal) structured ZnO with lattice constants of , . SEM and TEM images show the nanobelts to have lengths of 10-20 μm, widths of 50-500 nm, thicknesses of about 30-60 nm, and growth direction of [0001]. Gas sensitivity experiments on ZnO nanobelts were carried out under different temperatures. The results indicated high sensitivities with an operating temperature of only 220 ^°C for the oxidative gas O₂, and 305 ^°C for the gas N₂. The mechanism of gas sensitive effects is analyzed in detail.     

Formation of room-temperature ferromagnetic Zn1−xCoxO nanocrystals

Optical and magnetic properties of Co²⁺-doped ZnO nanocrystals were studied. Optical measurements confirm the incorporation of Co²⁺ in ZnO lattice with tetrahedral geometry. Optical absorption spectra also reveal the partial bleaching of the excitonic feature attributable to an increase in electron concentration. Magnetization measurements indicate the ferromagnetic ordering in Co²⁺-doped ZnO nanocrystals with saturation magnetization . No structural changes were observed in lightly doped ZnO nanocrystals. The present investigations are important in obtaining the ferromagnetic Zn_1−xCo_xO nanocrystals.     

p-type conduction in ZnO dual-acceptor-doped with nitrogen and phosphorus

A dual-acceptor doping method was proposed to produce p-type conduction in ZnO. Both nitrogen and phosphorus were used as the p-type doping agents. ZnO:(N, P) films were prepared by spray pyrolysis. The p-type conduction was achieved by thermal annealing at appropriate temperatures (500-700 ^°C) for 20 min in O₂ ambient. The lowest resistivity of , with a hole concentration and Hall mobility of 5.3×10¹⁷ cm⁻³ and 0.94 cm² V ⁻¹ s⁻¹, respectively, was obtained at an optimal annealing temperature of 600 ^°C. The p-type behavior was reproducible and stable. The introduction of nitrogen and phosphorus in ZnO were identified by secondary ion mass spectroscopy.     

Electronic structure and band gap of the negative charge-transfer material Sr3Fe2O7

We studied the electronic structure of the Sr₃Fe₂O₇ compound using X-ray photoelectron spectroscopy (XPS). The charge-transfer satellites in the Fe 2p XPS spectra were analyzed using standard cluster model calculations. The analysis indicates that Sr₃Fe₂O₇ is in the negative charge-transfer regime, and that the ground state is dominated by the configuration (where denotes an O 2p hole in the oxygen band). These results are similar to those found in the related SrFeO₃ and Sr₂FeO₄ compounds. The band gap of the Sr₃Fe₂O₇ compound is split off by the relatively large value of the p-d transfer integral T_σ. The lowest lying excitations are and consequently the band gap is of the p-p type. The band gap in the Sr_n+1Fe_nO_3n+1 series can be understood taking into account the trend in the O 2p bandwidths.     

Persistent Photoconductivity in electron-irradiated ZnO bulk single crystals: Evaluation of the metastable conductive state by the dual light illumination

Persistent Photoconductivity (PPC) in 30 MeV electron-irradiated n-type ZnO single crystals is studied under the dual light illumination (DLI: the infrared light excitation after the blue illumination). Below 160 K, the remarkable reduction in PPC is observed by the subsequent infrared illumination, suggesting the release of electrons from the perturbed-host state (PHS) as a metastable conductive state to the nonconductive state ( and/or ) via the higher unoccupied states inside the conduction band. Above 160 K, the slight increase in photocurrent is observed by the subsequent illumination, suggesting the photoexcitation of electrons not relevant to the PHS. These results depend on the electron concentration in the PHS.     

Vibronic transition moments and line intensities for H2O

Ab initio calculations of the electronic dipole moment components for the and electronic states and the electronic transition moment for the - transition of H₂O⁺ have been carried out. Parameterized analytical functions have been fitted through the computed ab initio data points, and the resulting dipole moment and transition moment surfaces have been used, along with potential energy surfaces derived from the ab initio results of Brommer et al. [J. Chem. Phys. 98 (1993) 5222], to simulate H₂O⁺ spectra and to generate an extensive set of vibronic transition moments for the and band systems of H₂O⁺. The work is made with the dual purpose of facilitating further assignments of high-resolution spectra [J. Mol. Spectrosc. 219 (2003) 258] and of allowing cometary spectra of H₂O⁺ to be simulated [Ap. J. 574 (2002) L183].     

Pressure-shift measurements of the oxygen A-band by Fourier-transform spectroscopy

The pressure shifts, δ, of the (0-0) band of the electronic transition of oxygen (the so-called ‘A-band’) have been measured at room temperature using high-resolution Fourier transform spectroscopy. The rotational dependence of δ has been measured and characterised; the average value of the shift over the whole band is . No significant variation in δ is found for different O₂ mixing ratios in N₂, and the results presented here are therefore appropriate for high-resolution atmospheric applications using the O₂A-band.