Influence of nanocrystalline structure and composition on hardness of thin films based on TiO<Subscript>2</Subscript>

In this work, the influence of Tb-doping on structure, and especially hardness of nanocrystalline TiO₂ thin films, has been described. Thin films were formed by a high-energy reactive magnetron sputtering process in a pure oxygen atmosphere. Undoped TiO₂-matrix and TiO₂:Tb (2 at. % and 2.6 at. %) thin films, had rutile structure with crystallite sizes below 10 nm. The high-energy process produces nanocrystalline, homogenous films with a dense and close packed structure, that were confirmed by X-ray diffraction patterns and micrographs from a scanning electron microscope. Investigation of thin film hardness was performed with the aid of a nanoindentation technique. Results of measurements have shown that the hardness of all manufactured nanocrystalline films is above 10 GPa. In the case of undoped TiO₂ matrix, the highest hardness value was obtained (14.3 GPa), while doping with terbium results in hardness decreasing down to 12.7 GPa and 10.8 GPa for TiO₂:(2 at. % Tb) and TiO₂:(2.6 at. % Tb) thin films, respectively. Incorporation of terbium into TiO₂-matrix also allows modification of the elastic properties of the films.     

Photocatalytic properties of nanocrystalline TiO<Subscript>2</Subscript> thin films doped with Tb

In this work photocatalytic properties of TiO₂ thin films doped with different amount of Tb have been described. Thin films were prepared by high energy reactive magnetron sputtering process. Comparable photocatalytic activity has been found for all doped TiO₂ thin films, while different amounts of Tb dopant (0.4 and 2.6 at. %) results in either an anatase or rutile structure. It was found that the terbium dopant incorporated into TiO₂ was also responsible for the amount of hydroxyl groups and water particles adsorbed on the thin film surfaces and thus photocatalytic activity was few times higher in comparison with results collected for undoped TiO₂ thin films.     

Nanostructured TiO<Subscript>2</Subscript> Films with a Mixed Phase for Perovskite Solar Cells

A series of thin films made with TiO₂ nanoparticles with a varied anatase/rutile phase ratio is prepared on conducting glass substrates using a spin-coating method. The structure, morphology, and optical properties of TiO₂ nanopowders and thin films fabricated are studied using powder X-ray diffraction, scanning electron microscopy, and optical spectroscopy. The TiO₂ nanostructured films created are used as photoelectrodes for the fabrication of perovskite solar cells (PSCs). The photovoltaic characteristics of PSCs under AM1.5 light illumination (1000 W/m²) under ambient conditions are studied. It is shown that the best efficiency of solar-to-electrical energy conversion, namely, 9.3%, is obtained for the PSC with a photoelectrode based on a TiO₂ film with an anatase/rutile mixed phase ratio of 86/14%.     

Characterization of Zn<Subscript>2</Subscript>SnO<Subscript>4</Subscript> Thin Films Prepared by RF Magnetron Sputtering

Zn₂SnO₄ (ZTO) is a stable semiconductor in ZnO–SnO₂ system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn₂SnO₄ ceramic target in this paper. The effects of annealing temperatures and oxygen contents on characterization of ZTO thin films were studied. The results show that ZTO thin films prepared by RF magnetron sputtering are amorphous with an optical band gap of 3.22 eV. After annealing at 650°C in Ar atmosphere for 40 min, ZTO films possess a spinel structure with an optical band gap of 3.62 eV. The atomic force microscope (AFM) data of morphology reveals that the surface roughness of films is about 2 nm. The results of energy dispersive spectrometer (EDS) show that the concentration ratio of Zn to Sn is in the range from 1.44 to 1.57. The results of Hall-effect-measurement system reveal that the resistivity of films varies from 102 to 10–1 Ωcm, carrier concentration is about 10¹⁷ cm^–3, and mobility ranges from 10⁰ to 10¹ cm² v^–1 s^–1.     

Methylene blue photoelectrodegradation under UV irradiation on Au/Pd-modified TiO2 films

In this work TiO₂ thin films were modified with gold/palladium (Au/Pd) bimetallic paticles by sputtering method. TiO₂ films were deposited on ITO (SnO₂:In) by Doctor Blade method and post-anneling. The properties of the films were studied through measurements of XRD (X-ray diffraction) and AFM (atomic force microscopy). The degradation of methylene blue was studied by UV-irradiated pure TiO₂ and Au/Pd-modified TiO₂ in aqueous solution. Langmuir-Hinshelwood model was used to obtain kinetic information. Photocatalytic study indicated that Au/Pd-modified TiO₂ photocatalytic activity was better than TiO₂ pure; the best half-life time for Au/Pd-modified TiO₂ in photodegradation was 2.8 times smaller than TiO₂ pure; finally the efficiency in methylene blue photodegradation was improved from 23% to 43% when Au/Pd-modified TiO₂ films were used.     

Structural investigations of TiO2:Tb thin films by X-ray diffraction and atomic force microscopy

In this work, structural investigations of TiO₂ thin films doped with Tb at the amount of 0.4, 2 and 2.6 at.% have been outlined. Thin films were deposited on Si and SiO₂ substrates by high energy reactive magnetron sputtering from mosaic Ti-Tb target. The influence of Tb dopant amount, post-annealing treatment and kind of applied substrate on microstructure has been discussed. Thin films were investigated by means of X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed the existence of crystalline TiO₂ in anatase and rutile forms, depending on Tb amount in examined samples. AFM images show that as-deposited samples with 0.4 at.% concentration of terbium (anatase structure) have bigger crystallites as compared to 2% and 2.6 at.% of Tb (rutile structure). The additional annealing at 1070 K results in a mixed anatase (77%) and rutile (23%) structure.     

Correlation between microstructure and optical properties of nano-crystalline TiO2 thin films prepared by sol-gel dip coating

Titanium dioxide thin films have been prepared from tetrabutyl-orthotitanate solution and methanol as a solvent by sol-gel dip coating technique. TiO₂ thin films prepared using a sol-gel process have been analyzed for different annealing temperatures. Structural properties in terms of crystal structure were investigated by Raman spectroscopy. The surface morphology and composition of the films were investigated by atomic force microscopy (AFM). The optical transmittance and reflectance spectra of TiO₂ thin films deposited on silicon substrate were also determined. Spectroscopic ellipsometry study was used to determine the annealing temperature effect on the optical properties and the optical gap of the TiO₂ thin films. The results show that the TiO₂ thin films crystallize in anatase phase between 400 and 800 °C, and into the anatase-rutile phase at 1000 °C, and further into the rutile phase at 1200 °C. We have found that the films consist of titanium dioxide nano-crystals. The AFM surface morphology results indicate that the particle size increases from 5 to 41 nm by increasing the annealing temperature. The TiO₂ thin films have high transparency in the visible range. For annealing temperatures between 1000 and 1400 °C, the transmittance of the films was reduced significantly in the wavelength range of 300-800 nm due to the change of crystallite phase and composition in the films. We have demonstrated as well the decrease of the optical band gap with the increase of the annealing temperature.     

Studies on Structural,Morphological and Optical Properties of Chemically Deposited CdS<Subscript>1-x</Subscript>Se<Subscript>x</Subscript> Thin Films

The thin films of CdS_1-xSe_x were successfully deposited over glass substrates by chemical bath deposition technique. Cadmium acetate, thiourea and sodium selenosulfate were used as source materials for Cd²⁺, S^2? and Se^2? ions, while 2-mercaptoethanol was used as capping agent. The various deposition conditions such as precursor concentration, deposition temperature, pH and deposition time were optimized for the deposition of CdS_1-xSe_x thin films of good quality and the films were annealed at 200° and 300 °C. The structural, morphological, chemical and optical properties were examined by various characterization techniques and discussed in detail. The optical band gap of CdS_1-xSe_x thin film samples were estimated and found in the range from 2.11 to 1.79 eV for as-deposited and annealed thin films.     

Annealing effects on microstructural and optical properties of Nanostructured-TiO2 thin films prepared by sol-gel technique

In this paper we report on the effect of annealing on the microsctructural and optoelectronic properties of titanium dioxide (TiO₂) thin films prepared using sol-gel method onto silicon (Si) (100) and quartz substrates. The annealing temperatures range from 200 to 1000 °C. The Microstructural properties of annealed thin films were investigated by Thermal gravimetric analyses (TGA), X-ray diffraction (XRD) and Raman Spectroscopy. The surface morphology of the film was examined using Atomic Force Microscopy (AFM) method. The optical properties of TiO₂ thin films were characterized using UV-VIS and Spectroscopic ellipsometry. The results have shown that the TiO₂ thin films persist in the anatase phase even after annealing at 800 °C. The phase transformation from anatase to rutile occurred only when the films were annealed at 1000 °C. AFM studies revealed nanocrystalline structure where their shape and density depend strongly on the annealing temperatures. The elaborated nanostructured-TiO₂ thin films present a high transparency in the visible range. Spectroscopic ellipsometry (SE) study was used to determine the effect of annealing temperature on the thickness and on the optical constant of TiO₂ thin films. Spectroscopic ellipsometry and UV-VIS shows that the band gap of TiO₂ thin films was found to decrease when the annealing temperature increases. The Anatase phase was find to show higher photocatalytic activity than the rutile one.     

Ion beam sputter deposition of TiO<Subscript>2</Subscript> films using oxygen ions

TiO₂ thin films were grown by ion beam sputter deposition (IBSD) using oxygen ions, with the ion energy and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) being varied systematically. Metallic Ti and ceramic TiO₂ served as target materials. The thin films were characterized concerning thickness, growth rate, surface topography, structural properties, mass density, and optical properties. It was found that the scattering geometry has the main impact on the film properties. Target material, ion energy, and ion incidence angle have only a marginal influence. Former studies on reactive IBSD of TiO₂ using Ar and Xe ions reported equivalent patterns. Nevertheless, the respective ion species distinctively affects the film properties. For instance, mass density and the refractive index of the TiO₂ thin films are remarkably lower for sputtering with oxygen ions than for sputtering with Ar or Xe ions. The variations in the thin film properties are tentatively attributed to the angular and the energy distribution of the film-forming particles, especially, to those of the backscattered primary particles.     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Phase transformation of nanostructured titanium dioxide thin films grown by sol–gel method

Nanostructured TiO₂ thin films were deposited on quartz glass at room temperature by sol–gel dip coating method. The effects of annealing temperature between 200^∘C to 1100^∘C were investigated on the structural, morphological, and optical properties of these films. The X-ray diffraction results showed that nanostructured TiO₂ thin film annealed at between 200^∘C to 600^∘C was amorphous transformed into the anatase phase at 700^∘C, and further into rutile phase at 1000^∘C. The crystallite size of TiO₂ thin films was increased with increasing annealing temperature. From atomic force microscopy images it was confirmed that the microstructure of annealed thin films changed from column to nubbly. Besides, surface roughness of the thin films increases from 1.82 to 5.20 nm, and at the same time, average grain size as well grows up from about 39 to 313 nm with increase of the annealing temperature. The transmittance of the thin films annealed at 1000 and 1100^∘C was reduced significantly in the wavelength range of about 300–700 nm due to the change of crystallite phase. Refractive index and optical high dielectric constant of the n-TiO₂ thin films were increased with increasing annealing temperature, and the film thickness and the optical band gap of nanostructured TiO₂ thin films were decreased.     

Poly(vinyl chloride)-<Emphasis Type="Italic">graft</Emphasis>-poly(<Emphasis Type="Italic">N</Emphasis>-vinyl caprolactam) graft copolymer: synthesis and use as template for porous TiO<Subscript>2</Subscript> thin films in dye-sensitized solar cells

Poly(N-vinyl caprolactam) (PNVCL) side chains were grafted to a poly(vinyl chloride) (PVC) backbone via atom transfer radical polymerization. The synthesized PVC-g-PNVCL graft copolymer was templated for the preparation of porous TiO₂ thin films, which involved a sol–gel reaction and calcination process. The interaction of the carbonyl groups in the PVC-g-PNVCL with the titania was revealed by FT-IR spectroscopy. X-ray diffraction and transmission electron microscopy analysis showed the formation of porous TiO₂ thin films with the anatase phase. A series of porous TiO₂ thin films with different pore sizes and porosities was prepared by varying the solution compositions and were used as photoelectrodes in dye-sensitized solar cells (DSSC) with a polymer electrolyte. The DSSC performed best when using the TiO₂ film with higher porosity, lower interfacial resistance, and longer electron life time. The highest energy conversion efficiency, photovoltage (V _oc), photocurrent density (J _sc), and fill factor (FF) were 1.2%, 0.68 V, 3.2 mA/cm², and 0.57 at 100 mW/cm², respectively, for the quasi-solid state DSSC with a 730-nm-thick TiO₂ film.     

Optoelectronics properties of TiO<Subscript>2</Subscript>:Cu thin films obtained by sol gel method

In this research, Cu-doped TiO₂ thin films have been successfully deposited onto a glass substrate by Sol–gel technique using dip coating method. The films were annealed at different annealing temperatures (400–500 °C) for 1 h. The structural, optical and electrical properties of the films were investigated and compared using X-ray Diffraction, UV–visible spectrophotometer and 4-point probe method. Optical analysis by mean transmittance T(λ) and absorption A(λ) measurements in the wavelength range between 300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our thin films of TiO₂:Cu shows that the intensities of the line characteristic of anatase phase increasing in function of the temperature.     

A Raman and dielectric study of a diffuse phase transition in (Pb<Subscript>1-x</Subscript>Ca<Subscript>x</Subscript>)TiO<Subscript>3</Subscript> thin films

Dielectric and Raman scattering experiments were performed on polycrystalline Pb_1-xCa_xTiO₃ thin films (x=0.10, 0.20, 0.30, and 0.40) as a function of temperature. The results showed no shift in the dielectric constant (K) maxima, a broadening with frequency, and a linear dependence of the transition temperature on increasing Ca²⁺ content. On the other hand, a diffuse-type phase transition was observed upon transforming from the cubic paraelectric to the tetragonal ferroelectric phase in all thin films. The temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the local cubic symmetry due to chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands in some temperature interval above the FE–PE phase transition temperature suggested a diffuse-type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. PACS 77.80.Bh; 77.55.+f; 78.30.-j; 77.80.-e; 68.55.-a     

Influence of a dopant source on the structural and optical properties of Mn doped ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> thin films

Thin films of ZnGa₂O₄:Mn²⁺ were deposited on quartz substrates using an rf magnetron sputtering technique. The sputtering target, ZnGa₂O₄ doped with 2 at. % manganese, was synthesized by a high temperature solid state reaction. Two different dopant sources were used to incorporate the dopant ions into the target, namely, manganese acetate and manganese oxide. The structural and optical properties of the thin films were studied using XRD, PL and transmission spectra. Polycrystalline ZnGa₂O₄:Mn with a spinel structure could be grown at an optimized substrate–target distance even at room temperature. No luminescence was observed in the as-deposited films grown using (CH₃COO)₂Mn as the dopant source in the target. Substrate heating or post-deposition annealing in the reducing ambient didn’t impart any luminescence to the films, ruling out the possibility of Mn²⁺ incorporation in the films. However, when using MnO as the manganese source in the target, the as-deposited films exhibited green photoluminescent emission (peak maximum at 508 nm) for substrate temperatures at and above 500 °C. This suggests that, in thin films, Mn incorporation and subsequent luminescent outcome is strongly influenced by the dopant source, which is quite different from the bulk phosphor behavior. PACS 81.15.Cd; 78.55.-m; 85.60.-q     

Influences of the iron ion (Fe)-doping on structural and optical properties of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

Titanium dioxide (TiO₂) thin films doping of various iron ion (Fe³⁺) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 °C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO₂ thin films comprised only the anatase TiO₂, but the crystallinity decreased when the Fe³⁺ content increased from 0% to 20%. During the Fe³⁺ addition to 20%, the phase of TiO₂ thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E_g) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe³⁺ content.     

Spray pyrolysis-deposited TiO<Subscript>2</Subscript> thin films as high-performance lithium ion battery anodes

Focusing on additive-free electrodes, thin films are of typical interest as electrodes for lithium ion battery application. Herein, we report the fabrication of TiO₂ thin films by spray pyrolysis deposition technique. X-ray diffraction and transmission electron microscopic analysis confirms the formation of anatase TiO₂. Electrochemical evaluation of these sub-micron TiO₂ thin films exhibits high-rate performance and long cycling stability. At 1C rate (1C?=?335 mA/g), the electrode delivered discharge capacity of 247 mAh/g allowing about 0.74 lithium into the structure. The electrodes also delivered specific capacities of 122 and 72 mAh/g at 10 and 30C rates, respectively. Without conductive additives, this excellent performance can be attributed to the nanosize effect of TiO₂ particles combined with the uniform porous architecture of the electrode. Upon cycling at high rates (10 and 30C), the electrode exhibited excellent cycling stability and retention, specifically only <?0.6% capacity loss per cycle over 2500 cycles.     

Sol-gel synthesis, characterization and optical properties of mercury-doped TiO2 thin films deposited on ITO glass substrates

The Hg-doped and undoped nano-crystalline TiO₂ films on ITO glass substrates surface and polycrystalline powders were prepared by sol-gel dip coating technique. The crystal structure and surface morphology of TiO₂ were characterized by means of X-ray diffractometer (XRD), atomic force microscope (AFM), spectrophotometer, Fourier-transform infrared (FTIR), and spectroscopic ellipsometry (SE). The results indicated that the powder of TiO₂, doped with 5% Hg in room temperature was only composed of the anatase phase whereas in the undoped powder exhibits an amorphous phase were present. After heat treatments of thin films, titanium oxide starts to crystallize at the annealing temperature 400 °C. The average crystallite size of the undoped TiO₂ films was about 8.17 nm and was increased with Hg-doping in the TiO₂ films. Moreover, the grains distributed more uniform and the surface roughness was greater in the Hg-doped TiO₂ films than in the undoped one. Refractive index and porosity were calculated from the measured transmittance spectrum. The values of the index of refraction are in the range (1.95-2.49) and the porosity is in the range (47-2.8). The coefficient of transmission varies from 60 to 90%. SE study was used to determine the annealing temperature effect on the optical properties in the wavelength range from 0.25 to 2 μm and the optical gap of the Hg-doped TiO₂ thin films.     

Hydrogenation of Pd-capped Mg thin films prepared by DC magnetron sputtering

Structural and optical properties of pure Mg thin film coated with Pd have been investigated. Pd-capped Mg thin films had been prepared by DC magnetron sputtering. This work presents an ex situ study on hydrogenation and dehydrogenation kinetics of Pd/Mg films at different conditions using XRD, AFM and optical spectrophotometer. We have succeeded to load thin films of Mg to MgH₂ at normal temperature and normal pressure of hydrogen gas. In hydrogenation, α-MgH₂ phase of magnesium hydride was observed in hydrogenated films at 200 °C and γ-MgH₂ at 250 °C respectively. The desorption kinetics in vacuum also revealed the phase transformation α-MgH₂ to γ-MgH₂. A reflectance change was observed in hydrogenated films in comparison of as deposited thin film. Hydrogenated (H loaded) samples were observed partially transparent in comparison of as deposited.