渐变型量子阱垒层厚度对GaN基双波长发光二极管发光特性调控的研究

采用软件理论分析的方法对渐变型量子阱垒层厚度的InGaN双波长发光二极(LED)的载流子浓度分布、 能带结构、自发发射谱、内量子效率、发光功率及溢出电子流等进行研究.分析结果表明, 增大量子阱垒层厚度会影响空穴在各量子阱的注入情况, 对双波长LED各量子阱中空穴浓度分布的 均衡性及双波长发光光谱的调控起到一定作用,但会导致内量子效率严重下降; 而当以特定的方式从n电极到p电极方向递减渐变量子阱垒层厚度时, 活性层量子阱的溢出电子流 得到有效的控制, 双发光峰强度达到基本一致, 同时芯片的内量子效率下降得到了有效控制, 且具备大驱动电流下较好的发光特性.     

CdTe,核 壳型CdTe/CdS及CdTe/ZnS量子点的合成及表征

在水相中制备了半导体CdTe纳米晶,核 壳型CdTe/CdS和CdTe/ZnS纳米晶（即量子点;QDs）.利用扫描隧道显微镜（STM）和荧光光谱(FS)对合成的纳米晶量子点进行了研究,并且根据FS的数据进行了量子效率的计算.STM的结果表明合成的量子点直径约为3 nm并且分布良好.为了提高量子效率,对Cd2+浓度和Cd2+∶S2－比例等反应条件进行了研究,结果表明随着回流时间的增加,核 壳型量子点CdTe/CdS的量子效率总体上呈下降趋势.CdTe/CdS在pH8.5,Cd2+∶S2－=10∶1（摩尔比）时可获得80.0%的最大量子效率.同时制备了核 壳型量子点CdTe/ZnS,其最大发射波长由551 nm（CdTe）红移到635 nm（CdTe/ZnS）表明量子点的尺寸在增长,但是量子效率下降到14.4%. 当前研究的量子点可适用于生物标记,生物成像,以及基于共振能量转移的生物传感研究.     

选择性p型量子阱垒层掺杂在双波长发光二极管光谱调控中的作用

采用软件理论分析的方法对选择性p型掺杂量子阱垒层在InGaN双波长发光 二极管(LED)中的光谱调控作用进行模拟分析.分析结果表明, 选择性p型掺杂对量子阱中电子和空穴浓度分布的均衡性起到一定的调控作用, 在适当选择p型掺杂量子阱垒层层数的条件下,能够改善量子阱中载流子的 辐射复合速率, 降低溢出电子浓度,从而有效提高芯片内量子效率,并减缓内量子效率随驱动 电流增大而快速下降的趋势.随着活性层量子阱增加到特定数量, 选择性p型掺杂的调控效果更加明显, LED芯片的双波长发光峰强度达到基本均衡.     

p-AlGaN电子阻挡层Al组分对Si衬底绿光LED性能影响的研究

在Si(111)衬底上利用MOCVD方法生长了具有不同Al组分p-AlGaN电子阻挡层的绿光InGaN/GaN LED结构,并对其光电性能进行了研究.结果表明,不同Al组分样品的量子效率随电流密度的变化规律呈现多样性.在很低电流密度范围,LED量子效率随Al组分升高而下降;在较高电流密度范围,LED量子效率随Al组分升高而升高,即此时缓解了量子效率随电流密度增大而衰退的速率(即droop效应);但随着电流密度的进一步升高,反而加快了量子效率衰退的速率.这些现象解释为不同Al组分的p-AlGaN对空穴和电子 关键词： 氮化镓 p-AlGaN 绿光LED 量子效率     

基于混合型量子阱的GaN基垂直结构发光二极管性能

为解决GaN基垂直结构发光二极管(VS-LEDs)在大电流驱动时效率下降的问题,制作了具有耦合量子阱(CQWs)和传统量子阱(NQWs)的混合型量子阱(HQWs)结构VS-LEDs.与NQWs结构VS-LEDs相比,HQWs结构VS-LEDs在350 mA输入电流下的正向偏压降低0.68 V,光输出功率提升53.0％,并有更好的电流响应效率.同时,NQWs结构和HQWs结构VS-LEDs的外量子效率分别下降到最大值的37.7％和67.5％,表明采用HQWs能使LEDs的效率下降得到大幅缓解.     

反射式负电子亲和势GaN光电阴极量子效率衰减机理研究

针对反射式负电子亲和势(NEA) GaN光电阴极量子效率的衰减以及不同波段对应量子效率衰减速度的不同,参照国外给出的NEA GaN光电阴极在反射模式下量子效率曲线随时间的衰减变化情况,利用GaN光电阴极铯氧激活后的表面模型［GaN(Mg):Cs］:O-Cs,结合量子效率衰减过程中表面势垒的变化,研究了反射式NEA GaN光电阴极量子效率的衰减机理. 有效偶极子数量的减小是造成量子效率降低的根本原因,表面I,II势垒形状的变化造成了不同波段对应的量子效率下降速度的不同.     

若丹明6G溶液体系的荧光量子效率

本文对八种若丹明6G溶液的荧光量子效率进行了测量,并着重讨论了染料若丹明6G溶液体系的量子效率的溶剂效应.在研究中发现:若丹明6G溶渡的荧光量子效率与溶液极性(ε-1)/(2ε+1)之间存在线性关系,体系的荧光量子效率随溶剂极性的增加而下降.由于染料分子与成氢键溶剂作用愈强,能量散逸愈快将是导致这一结果的主要原因.这一规律也适用于ANS染料溶液体系中.     

象管和探测量子效率

前言探测量子效率通常用来作为零频时评定光敏元件性能的单值估算。将证明探测量子效率可以表示为器件调制传递函数、器件光敏元件量子效率和衰减因子的函数,衰减因子是在有与光电子噪声不同的噪声使性能降低时存在的。探测量子效率与MTF的关系是很重要的,因为它允许以绝对值的形式表示与空间频率的相关性,因此,现行系统性能的测试得到简化并避免了只使用MTF所产生的困难。     

反射式负电子亲和势GaN光电阴极量子效率衰减机理研究

针对反射式负电子亲和势(NEA) GaN光电阴极量子效率的衰减以及不同波段对应量子效率衰减速度的不同,参照国外给出的NEA GaN光电阴极在反射模式下量子效率曲线随时间的衰减变化情况,利用GaN光电阴极铯氧激活后的表面模型［GaN(Mg):Cs］:O-Cs,结合量子效率衰减过程中表面势垒的变化,研究了反射式NEA GaN光电阴极量子效率的衰减机理. 有效偶极子数量的减小是造成量子效率降低的根本原因,表面I,II势垒形状的变化造成了不同波段对应的量子效率下降速度的不同. 关键词： 负电子亲和势 GaN光电阴极 量子效率 表面势垒     

不同掺杂类型的GaN间隔层和量子阱垒层对双波长LED作用的研究

采用软件理论分析的方法对不同掺杂类型的GaN间隔层和量子阱垒层在InGaN/GaN多量子阱双波长发光二极管中对发光光强、内量子效率、电子空穴浓度分布、溢出电流等作用进行模拟分析. 分析结果表明,p型掺杂的GaN间隔层与量子阱垒层的引入同不掺杂和n型掺杂两种类型比较,可以大大减少溢出电子流,极大地提高各量子阱内空穴浓度,提高双波长发光二极管的发光强度,极大的改善内量子效率随电流增大而下降问题. 关键词： GaN 掺杂类型 数值模拟 双波长发光二极管     

Ultra-fine pitch chip-on-glass (COG) bonding with metal bumps having insulating layer in the side walls using anisotropic conductive film (ACF)

We developed a new ultra-fine pitch chip-on-glass (COG) bonding technique using insulated metal bumps and anisotropic conductive film (ACF). An insulating layer was formed by spin coating a photosensitive insulating polymer and subsequently exposing it without any mask. The shape of the insulating layer coverage on the side walls of the metal bumps can be controlled by changing the exposure time and the viscosity of the photosensitive insulating polymer. In our experiment, we successfully fabricated COG joints with a 25 μm pitch using Au bumps with an insulating layer on their side walls and a conventional single-layer ACF. When the bumps were covered with the photosensitive insulating polymer, a few conductive particles were trapped between neighboring bumps and many conductive particles were embedded between bumps and pads. The electrical resistance between neighboring bumps was measured by the two-point probe method. The resistances were measured only in uncoated specimens. The measured resistance indicates that electrical shorting between neighboring bumps occurred in uncoated specimens. Therefore, electrical shorting was successfully prevented by the insulating layer on the side walls of the bumps.     

The Surface Wettability and Adhesion of Poly(Ester Urethane)s and Poly(Ether Urethane)s

In this study the wetting characteristics of untreated and plasma-treated polyurethane thin films were investigated. The degree of wettability was investigated by measuring the contact angle formed between a liquid drop and the solid surface. The work of adhesion, interfacial free energy, spreading coefficient, and Girifalco–Good's interaction parameter changed significantly for plasma-treated polyurethane films. Both complete and partial wetting were analyzed from the spreading coefficient of liquid drops on the solid substrate.     

Compaction of poly(dimethylsiloxane) (PDMS) due to proton beam irradiation

This work is about the detailed investigation of the changes of the surface topography, the degree of compaction/shrinkage and its relation to the irradiation fluence and the structure spacing in poly(dimethylsiloxane) (PDMS) patterned with 2 MeV proton microbeam. The irradiated periodic structures consisted of parallel lines with different widths and spacing. To achieve different degrees of compaction, each structure was irradiated with more different fluences. At the irradiated areas the surface topography, the adhesion, the wettability and the rigidity of the surface also changes due to the chemical/structural change of the basic poly(dimethylsiloxane) polymer. The surface topography, the phase modification of the surface, and the connection between them was revealed with using an atomic force microscope (AFM).     

间距对图像传感器调制传递函数矩形模板接触测量的影响

为了简易、方便地测量图像传感器的调制传递函数,可以采用将模板直接投射在图像传感器上的办法来测量。实际测试中通常采用矩形模板,而且模板距离图像传感器光敏面有一定距离。从理论上分析了矩形模板和图像传感器光敏面不同间距情况下的光场分布,比较了用此光场分布函数测量图像传感器调制传递函数与采用正弦模板接触式测量法测得的调制传递函数值之间的差异。最后采用空间频率为50 mm-1的高对比矩形光栅进行了实验,测得调制传递函数为0.22,而修正后的调制传递函数值为0.18。结果表明修正后的调制传递函数值更准确,能更准确地评价图像传感器的性能。     

Surface modification of poly(styrene-b-(ethylene-co-butylene)-b-styrene) elastomer via photo-initiated graft polymerization of poly(ethylene glycol)

Poly(styrene-b-(ethylene-co-butylene)-b-styrene) (SEBS) copolymer biomedical elastomer was covalently grafted with poly(ethylene glycol) methyl ether methacrylate (PEGMA) via a photo-initiated graft polymerization technique. The surface graft polymerization of SEBS with PEGMA was verified by ATR-FTIR and XPS. Effect of graft polymerization parameters, i.e., monomer concentration, UV irradiation time and initiator concentration on the grafting density was investigated. Comparing with the virgin SEBS film, the PEGMA-modified SEBS film presented an enhanced wettability and a larger surface energy. Besides, the surface grafting of PEGMA imparted excellent anti-platelet adhesion and anti-protein adsorption to the SEBS surface.     

Surface-initiated ATRP of 2-(methacryloyloxy)ethyl 2-(trimethylammonio)ethyl phosphate on Phynox

Phynox is of high interest for technological applications due to its high corrosion resistance, mechanical properties and biocompatibility. In combination with these remarkable characteristics, some Phynox applications require specific surface properties that can be imparted with suitable surface functionalizations of the oxide layer. The present work aims at studying the surface-initiated atom transfer radical polymerization (ATRP) of 2-(methacryloyloxy)ethyl 2-(trimethylammonio)ethyl phosphate (MPC) on Phynox substrates, using grafted 11-(2-bromoisobutyrate)-undecyl-1-phosphonic acid as initiator. The ability of the initiator to bind Phynox substrates and act as an initiator for ATRP of MPC is investigated. It appears that ATRP polymerization of MPC on modified Phynox substrates already takes place in aqueous media at room temperature, but the yield at 90 °C is superior.     

Thermal analysis of high-index-contrast grating (HCG)-based VCSEL

A 3-D thermal analysis of 870 nm high-index-contrast grating (HCG)-based vertical cavity surface emitting laser (VCSEL) by using finite volume method (FVM) is presented in this paper. The HCG-based VCSEL is modeled by applying a steady-state 3-D heat dissipation model. Temperature distribution profile and thermal resistance (R_th) of the device are investigated by inserting the heat source value into the thermal simulation. Also, this analysis is performed for a conventional VCSEL operating at the same wavelength and under the same injected current as well as the same geometric sizes. The analysis shows that the maximum temperature inside the HCG-based VCSEL is lower than that inside the conventional VCSEL.     

Cu(100)表面c(2×2)-N原子结构与吸附行为研究

用密度泛函理论的总能计算研究了金属铜(100)面的表面原子结构以及氮原子的c(2×2)吸附状态.研究结果表明：在Cu(100) c(2×2)-N表面系统中，氮原子处于四度配位的空洞(FFH)位置，距离最表面铜原子层的垂直距离为0.20?，最短的Cu—N键长度为1.83?.结构优化的计算否定了被吸附物导致的表面再构模型，即c(2×2)元胞的两个铜原子在垂直于表面方向发生相对位移，一个铜原子运动到氮原子之上的模型.该吸附表面的功函数约为4.65eV, 氮原子的平均吸附能为4.92 eV(以孤立氮原子为能量参考点).计算结果还说明，Cu—N杂化形成的表面局域态的位置在费米面以下约1.0 eV附近出现，氮原子和第一层以及第二层铜原子均有不同程度的杂化作用.该结果为最近有关该表面的STM图像的争论提供了判据性的第一性原理计算结果. 关键词： Cu(100) c(2×2)-N 表面吸附态 密度泛函总能计算     

GaAs (100)-(1X1) Structure Analysis from LEED Intensities

GaAs (100)-(1X1) surface grown by molecular-beam epitaxy was studied by low energy electron diffraction (LEED). Intensities of diffraction spots were measured in the energy range of (40-300) eV and analysed using dynamical tensor LEED package. Relaxation of surface layers decreased the Pendry's R-factor to 0.48. Analysis of the LEED intensity-voltage curves for the normal electron incidence shows that the investigated surface structure is more complicated than a simply relaxed ideal surface.     

Transition metal dichalcogenides (TMDCs) heterostructures: Optoelectric properties

Transition metal dichalcogenides (TMDCs) have suitable and adjustable band gaps, high carrier mobility and yield. Layered TMDCs have attracted great attention due to the structure diversity, stable existence in normal temperature environment and the band gap corresponding to wavelength between infrared and visible region. The ultra-thin, flat, almost defect-free surface, excellent mechanical flexibility and chemical stability provide convenient conditions for the construction of different types of TMDCs heterojunctions. The optoelectric properties of heterojunctions based on TMDCs materials are summarized in this review. Special electronic band structures of TMDCs heterojunctions lead to excellent optoelectric properties. The emitter, p-n diodes, photodetectors and photosensitive devices based on TMDCs heterojunction materials show excellent performance. These devices provide a prototype for the design and development of future high-performance optoelectric devices.