Microscopic theory on the Raman spectra of transition metal dichalcogenides in CDW state

Microscopic mechanisms are clarified for Raman scattering of collective modes, i.e., amplitude and phase modes in the charge density wave (CDW) state of transition metal dichalcogenides. We study three phonon process in triple CDW state and effects of $\text{partial}$ destruction of the Fermi surface due to the phase transition. It has then been understood how both phase and amplitude modes are given Raman activity and how A-E splittings of both modes and the commensurability pinning of the phase mode are related to the three phonon process. We can also explain change of Raman intensity of the originally Raman active A_1g phonon mode at phase transition as interference between paramagnetic and diamagnetic contributions for 2HTaSe₂ as well as other materials.     

Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC

The width of phonon lines in the Raman spectra of ideal isotopically pure solids is determined by inelastic scattering processes. In solids that contain a mixture of different isotopes of one atomic constituent, elastic scattering due to isotopic mass disorder opens up decay channels that result in additional line broadening. We use different polytypes of SiC with an associated number of Raman active modes in order to experimentally validate the proportionality between linewidth and phonon density of states predicted by a simple elastic scattering theory.     

Surface optical phonon—assisted electron Raman scattering in a semiconductor quantum disc

We have carried out a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the surface optical phonon modes in a semiconductor quantum disc.electron states are considered to be confined within a quantum disc with infinite potential barriers.The optical phonon modes we have adopted are the slab phonon modes by taking into consideration the Frohlich interaction between an electron and a phonon.The selection rules for the Raman process are given.Numerical results and a discussion are also presented for various radii and thicknesses of the disc,and different incident radiation energies.     

Phonon properties of CoSb2 single crystals

The phonon properties of CoSb(2) have been investigated by Raman scattering spectroscopy and lattice dynamics calculations. Sixteen out of eighteen Raman active modes predicted by factor-group analysis are experimentally observed and assigned. The calculated and measured phonon energies at the Γ point are in very good agreement. The temperature dependence of the A(g) symmetry modes is well represented by phonon-phonon interactions without contribution from any other phonon or electron related interactions.     

气相外延GaN的拉曼散射

测量了在蓝宝石衬底上气相外延生长GaN的拉曼散射谱.除观察到已被确认的两个E2,一个A1(TO)和一个E1(TO)声于振动以外,在734±3cm-1处观察到一个散射峰且从实验上确认其为GaN的纵向光学声子模E1(LO).而且发现其强度与外延层晶体质量密切相关.A1(TO)和高频E2散射峰相对强度变化显示不同生长条件引起的外延层质量的变化.     

One phonon resonant Raman scattering in a quantized spherical film

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with surface optical (SO) phonon modes in a semiconductor quantized spherical film. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study the selection rules for the processes. Singularities are found to be size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectrum. A discussion of the phonon behavior for the films with large and small size is presented. The numerical results are also compared with that of experiments.     

First-order Raman scattering in cylindrical wurtzite nanowire

We have presented a theoretical study on electron resonant Raman scattering (ERRS) process associated with the bulk longitudinal optical (LO), surface optical (SO) and quasi-confined (QC) phonon modes in a free-standing wurtzite nanowire (NW). We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum model. Numerical calculations on the GaN material reveal that differential cross-section (DCS) is sensitive to the wire size. The bulk LO and high-frequency quasi-confined (QC₊) phonons make main contributions to the DCS and the impact of the SO phonon can be negligible in the ERRS process. Moreover, scattering intensity of the bulk LO phonon is strongly enhanced as the incident photon energy approaches the energy band-gap of the GaN.     

One-phonon resonant electron Raman scattering in a cylindrical semiconductor quantum dot

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the surface optical (SO) phonon modes in semiconductor quantum dots (QDs). We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities are found to be sensitively size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.     

掺镱钒酸钇晶体的晶格振动光谱

掺镜钒酸钇晶体是一种很有应用前景的晶体材料,由于它适合于半导体激光器泵浦的全固态激光器的要求而受到人们的普遍关注。拉曼光谱是研究材料的声子能谱分布的方法。本文根据群论对称性分类,计算了掺镜钒酸钇晶体的拉曼和红外活性振动模。选择不同几何配置的拉曼光谱,获得了不同的晶格振动模并计算了不同晶格振动模的散射效率。实验证明最强的振动模来自钒氧四面体的振动。     

Influence of parametric four-wave mixing effects on stimulated Raman scattering in bimodal optical fibers

We analyze stimulated Raman scattering in normally dispersive bimodal fibers under single-frequency pumping conditions. Experiments show that whenever the interacting nonlinear waves propagate in the LP(01) and LP(11) modes, a parametric four-wave mixing enters unavoidably into play in the wave-coupling behavior, which causes qualitatively different phenomena compared with the ordinary process of Raman scattering, such as the parametric suppression of the first-order Raman Stokes radiation.     

One-phonon-assisted resonant electron Raman scattering of GaAs quantum dots in an AlAs matrix

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in semiconductor quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.     

GaAs/AlAs超晶格的近共振喇曼散射研究

本文介绍GaAs/AlAs超晶格的室温近共振喇曼散射测量结果。由于超晶格中Fr?hlich相互作用的共振增强效应,GaAs LO声子偶模的散射得到了很大的增强。和前人的结果一样,在偏振谱我们观察到了偶模。但和前人的结果不同,在退偏振谱中我们观察到的是奇模,而不是偶模。从而证明了在近共振条件下LO声子限制模仍遵从与非共振时一样的选择定则。二级喇曼散射实验结果表明,在偏振谱中二级谱是由两个偶模组合而成,而在退偏振谱中的二级谱与前人的结果不同,由一个奇模与一个偶模组合而成。上述结果与最近提出的黄朱模型的预言是一 关键词：     

One‐phonon resonant electron Raman scattering in a cylindrical GaAs/AlAs quantum dot

We have presented a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the interface optical phonon modes in cylindrical GaAs quantum dots (QDs) with a AlAs matrix. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size‐dependent, and, by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with different size is presented. Copyright © 2013 John Wiley & Sons, Ltd.     

Infrared and Raman spectroscopies of InP/II–VI core-shell nanoparticles

We use infrared (IR) and Raman spectroscopies to investigate the optically active phonon modes in InP nanoparticles and InP/II–VI core-shell nanoparticles fabricated by similar colloidal chemistry methods. The IR transmission spectra of several InP nanoparticle samples exhibit a common absorption feature, which we assign to the Fröhlich mode. The Raman results for the same samples show transverse and longitudinal optical phonon peaks, and scattering strength in between due to surface optical (SO) modes. Infrared spectra of the InP/ZnSe core-shell nanoparticles () exhibit three absorption features, one due to the InP core, and the others associated with the ZnSe shell layer. Raman measurements (12–292 K) also show three phonon-related peaks, whose intensities vary sharply with temperature. The frequencies of the IR and Raman lines are in approximate accord with dielectric continuum theory.     

High-energy phonon branches of an individual metallic carbon nanotube

We present excitation-energy dependent Raman measurements between 2.05 and 2.41 eV on the same individual carbon nanotube. We find a change in the Raman frequencies of both the D mode (63 cm(-1)/eV) and the high-energy modes. The observed frequencies of the modes at approximately 1600 cm(-1) as a function of laser-energy map the phonon dispersion relation of a metallic tube near the Gamma point of the Brillouin zone. Our results prove the entire first-order Raman spectrum in single-wall carbon nanotubes to originate from double-resonant scattering. Moreover, we confirm experimentally the phonon softening in metallic tubes by a Peierls-like mechanism.     

La_(1-x)Ca_xMnO_3薄膜的Raman光谱

测量了１３Ｋ到室温下外延生长的Ｌａ１－ｘＣａｘＭｎＯ３薄膜的Ｒａｍａｎ光谱，发现当冷却样品穿过磁有序温度时，纯的和掺Ｃａ２＋的样品的一些Ｒａｍａｎ模式发生红移，而散射强度在转变点附近形成极大值。为了检查散射张量的对称性，进行了左旋和右旋入射光偏振实验，发现当温度降低时，两种入射偏振下散射强度差明显增大，这表明散射过程中有磁激发涉入。这些事实提出了这类材料中单声子－单磁振子散射机制的可能     

纳米氮化镓的拉曼光谱研究

纳米氮化镓的拉曼光谱研究罗薇邹广田崔启良赵永年崔田李红东韩杰（吉林大学超硬材料国家重点实验室长春１３００２３）ＳｔｕｄｙｏｆＲａｍａｎＳｐｅｃｔｒａｏｎＧａＮＮａｎｏｃｒｙｓｔａｌＬｕｏＷｅｉ，ＺｏｕＧｕａｎｇｔｉａｎ，ＣｕｉＱｉｌｉａｎｇ，Ｚｈａｏ...     

Raman scattering from microcrystals

This review discusses the size effects on Raman scattering from microcrystals. For ionic microcrystals, the existence of surface phonon modes is predicted from electromagnetic theories. It is shown that Raman spectroscopy is very effective to detect the surface phonon modes. The size effects on nonpolar phonons in covalent microcrystals can also be studied by Raman spectroscopy. However, the relaxation of the wave-vector selection rule or the phonon confinement explains only some of the experimental data. Development of lattice dynamical theories of Raman scattering from microcrystals including surface effects is highly required. Enhancement of Raman intensities arising from the excitation of electromagnetic normal modes of microcrystals is also discussed.     

n-SiC拉曼散射光谱的温度特性

测量了采用离子注入法得到掺N的n-SiC晶体从100—450 K的拉曼光谱. 研究了SiC一级拉曼谱、电子拉曼散射谱及二级拉曼谱的温度效应. 实验结果表明,大部分SiC一级拉曼峰会随温度升高向低波数方向移动,但声学模红移(峰值位置向低频方向移动)的幅度较光学模小. 重掺杂4H-SiC的纵光学声子等离子体激元耦合(LOPC)模频率随温度升高表现出先蓝移(峰值位置向高频方向移动)后红移的变化趋势,表明LOPC模的温度特性不仅会受到非简谐效应的影响,还与实际已离化杂质浓度有关. 电子拉曼散射峰线宽随温度升高而增 关键词： 碳化硅 温度 纵光学声子等离子体激元耦合模 电子拉曼散射     

一种基于荧光材料的聚合物白光发光二极管

制备了一种基于荧光聚合物共混的单发光层聚合物白光发光二极管.器件结构为铟锡氧化物/苯磺酸掺杂聚乙烯基二氧噻吩/发光层/ 1,3,5-三(N-苯基-2-苯并咪唑-2)苯41/Ba/Al,蓝光材料芴-氟化喹喔啉共聚物(PF-BPFQ5)、绿光材料苯基取代的聚对苯乙炔(P-PPV)和红光材料聚(2-甲氧基-5-(2′-乙基己氧基)-1,4-对苯乙炔)(MEH-PPV)共混为发光层.当PF-BPFQ5,P-PPV,MEH-PPV的质量比例为100∶06∶06时,获得标准的白光,色坐标为（033 关键词： 聚合物发光二极管 白光 共混