First-principles calculations of electronic, optical and elastic properties of ZnAl2S4 and ZnGa2O4

The optimized crystal structures, band structures, partial and total densities of states (DOS), dielectric functions, refractive indexes and elastic constants for ZnAl₂S₄ and ZnGa₂O₄ were calculated using the CASTEP module of Materials Studio package. Pressure effects were modeled by performing these calculations for different values of external hydrostatic pressure up to 50 GPa. Obtained dependencies of the unit cell volume on pressure were fitted by the Murnaghan equation of state, and the relative changes of different chemical bond lengths were approximated by quadratic functions of pressure. Variations of applied pressure were shown to produce considerable re-distribution of the electron densities around ions in both crystals, which is evidenced in different trends for the effective Mulliken charges of the constituting ions and changes of contour plots of the charge densities. The longitudinal and transverse sound velocities and Debye temperatures for both compounds were also estimated using the calculated elastic constants.     

Structure and electronic properties of MNO3 (M: Li,Na, K,NH4) under pressure: DFT-D study

The structural and electronic properties of crystalline nitrates have been investigated within the framework of density functional theory including van der Waals interactions. Pressure behavior of nitrates has been investigated using semiempirical dispersion correction scheme DFT-D. The optimizations of the crystal structures have been done with full relaxation of the atomic positions and lattice parameters under the experimentally determined crystal symmetries. The pressure dependences of geometrical parameters, band gaps, densities of states, charge distributions, overlap populations and atomic charges are computed. The predicted results agree well with the available experimental data.     

Electronic structure and half-metallicity of the new Heusler alloys PtZrTiAl,PdZrTiAl and Pt0.5Pd0.5ZrTiAl

The electronic structure and magnetic properties of the PtZrTiAl, PdZrTiAl and Pt_0.5Pd_0.5ZrTiAl Heusler alloys were investigated using the full-potential linearized augmented plane wave (FPLAPW) within the generalized gradient approximation (GGA). For the PtZrTiAl, and PdZrTiAl alloys, the results showed that these Heusler alloys were stable in the Type I structure. The (Pt, Pd)ZrTiAl Heusler alloys are found to exhibit half-metallic ferromagnetism for both the Type I and Type II structure. The total magnetic moments of the PtZrTiAl and PdZrTiAl alloys were obtained to be 3 μ_B per formula unit, which are in agreement with the Slater-Pauling rule m_tot = (Nv ? 18). The half-metalliciy characteristic exists in the relatively wide ranges of 6.06–6.78 Å, and 6.13–6.73 Å for the PtZrTiAl and PdZrTiAl alloys, respectively. To complete the fundamental characteristics of these alloys, Pt_0.5Pd_0.5ZrTiAl is predicted to be a half-metallic ferromagnet with an energy gap of 0.90 eV in the minority spin and a complete spin polarization at the Fermi level. These new Heusler alloys may become ideal candidate material for future spintronic applications.     

Structural stability and electronic properties of Co2N, Rh2N and Ir2N

The structural stability and electronic properties of Co₂N, Rh₂N and Ir₂N were studied by using the first principles based on the density functional theory. Two structures were considered for each nitride, orthorhombic Pnnm phase and cubic Pa3¯ phase. The results show that they are all mechanically stable. Co₂N in both phases are thermodynamically stable due to the negative formation energy, while the remaining two compounds are thermodynamically unstable. The calculated properties show that they are all metallic and non-magnetic. Ir₂N at Pnnm phase is a potentially hard material. The bonding behavior is analyzed.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

First-principles study of structural, electronic and elastic properties of single crystal CuZr

Investigations into the structural, electronic and elastic properties of intermetallic CuZr compound had been conducted by the plane-wave pseudopotential method. The calculated lattice constant was consistent well with the experimental value. The absence of band gap and finite value of the density of states (DOS) at the Fermi level reveal the metallic behavior of CuZr crystal, and Zr 4d states give rise to the electrical conductivity. The calculated elastic constants for single crystal CuZr at zero pressure obey the cubic mechanical stability condition, which indicates that the cubic CuZr crystal is mechanical stable at zero pressure. By analyzing the ratio between the bulk and shear moduli, we conclude that CuZr crystal is ductile in nature. The present theoretical investigations might give prediction to polycrystalline CuZr system.     

Many-body effects in the optical absorption of lithium azide (LiN3)

Until recently most of the understanding achieved for solid explosives has been obtained using various semi-empirical approaches due to a major role of excitonic effects in the mechanisms of decomposition. Nevertheless, during the last two decades, thanks to the ongoing progress in iterative computational methods, the inclusion of the electron-hole interaction in ab initio calculations has become a standard approach in solid-state theory. In this paper, the electronic structure and optical properties of bulk lithium azide are investigated, taking into account the electron-hole interaction via the Bethe–Salpeter equation (BSE). Here, we employ the kernel polynomial method (KPM), which significantly reduces the computational cost compared to direct diagonalization methods. The calculations of the imaginary part of the polarization dependent dielectric function including excitonic effects are reported for the first time. Then, we show a density map of the two-particle wave function and propose an alternative interpretation of the initial stages of the externally triggered chemical decomposition, based on the analysis of two-particle states near the absorption edge.     

First-principles study of lattice dynamics in thallium-V compounds

We have performed first-principles calculations to investigate the structural, lattice dynamics and thermodynamic properties of the zincblende thallium-V compounds: TlAs, TlP and TlN. The ground-state parameters, such as the lattice constant and the bulk modulus, as well as the electronic structure are calculated using the plane wave pseudopotential approach to density functional theory within the local density approximation. Phonon dispersion spectra are derived from the linear response to density functional theory. The present ab initio results for phonon dispersion are compared and contrasted with the common III–V materials. Thermodynamical properties, calculated using quasiharmonic approximations, are also reported.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Theoretical determination of the K2 electronic structure

A theoretical study of the electronic structure of K₂⁺ is presented. Potential energy curves for the ground and various electronic excited states have been computed in the framework of a model potential method over a wide range of internuclear distances. Spectroscopic constants for the lowest short-range bound states have been determined and they are compared with available experimental and theoretical values. Long-range structures (wells and humps) have been also predicted, some of which being described from a long-range model.     

First principles study of the electronic structure and phonon dispersion of naphthalene under pressure

The structural, electronic and vibrational properties of crystalline naphthalene has been investigated within the framework of density functional theory including van der Waals interactions. The computed lattice parameters and cohesive energy have good agreement with experimental data. We study on the structural and electronic properties of the naphthalene under the hydrostatic pressure of 0–20 GPa. The isothermal equations of state calculated from the results show good agreement with experiment in the pressure intervals studied. The phonon dispersion curves have been computed at ambient and hydrostatic pressure of 10 and 20 GPa. We have also calculated the quasiparticle band structure of naphthalene with the G₀W₀ approximation.     

First principles study of half-metallic ferromagnetism in Zn1−xEuxS

Density functional theory calculations by using both generalized gradient approximation (GGA) method and the GGA with considering strong correlation effect (GGA+U) for various Eu concentrations x (=0.00, 0.25, 0.50, and 0.75). It is found that after the Europium incorporation, a new localized band appears between the valence and conduction bands, which corresponds to the majority spin of Eu-4f states, the strong correlation effects is very important for the 4f orbit of the Eu atom in ZnEuS. We find that Zn_1−xEu_xS exhibits a half-metallic characteristic, and the ferromagnetic state is more favorable in energy than the antiferromagnetic state. Structural properties are determined from the total energy calculations, and we discuss the electronic structures, total and partial densities of states and local moments.     

Single crystal growth,electronic structure and optical properties of Cs2HgBr4

We report on successful synthesis of high-quality single crystal of cesium mercury tetrabromide, Cs₂HgBr₄, by using the vertical Bridgman–Stockbarger method as well as on studies of its electronic structure. For the Cs₂HgBr₄ crystal, we have recorded X-ray photoelectron spectra for both pristine and Ar⁺ ion-bombarded surfaces. Our data indicate that the Cs₂HgBr₄ single crystal surface is rather sensitive with respect to Ar⁺ ion-bombardment. In particular, such a treatment of the Cs₂HgBr₄ single crystal surface alters its elemental stoichiometry. To explore peculiarities of the energy distribution of total and partial densities of states within the valence band and the conduction band of Cs₂HgBr₄, we have made band-structure calculations based on density functional theory (DFT) employing the augmented plane wave+local orbitals (APW+lo) method as incorporated in the WIEN2k package. The APW+lo calculations allow for concluding that the Br 4p states make the major contributions in the upper portion of the valence band, while its lower portion is dominated by contributors of the Hg 5d and Cs 5p states. Further, the main contributors to the bottom of the conduction band of Cs₂HgBr₄ are the unoccupied Br p and Hg s states. In addition, main optical characteristics of Cs₂HgBr₄ such as dispersion of the absorption coefficient, real and imaginary parts of dielectric function, electron energy-loss spectrum, refractive index, extinction coefficient and optical reflectivity have been explored from the first-principles band-structure calculations.     

First-principles investigation of the electronic structure and magnetism of eskolaite

The electronic structure and magnetism of eskolaite are studied by using first-principles calculations where the on-site Coulomb interaction and the exchange interaction are taken into account and the LSDA+U method is used. The calculated energies of magnetic configurations are very well fitted by the Heisenberg Hamiltonian with interactions in five neighbour shells; interaction with two nearest neighbours is found to be dominant. The Néel temperature is calculated in the spin-3/2 pair-cluster approximation. It is found that the measurements are in good agreement with the calculations of lattice parameters, density of states, band gap, local magnetic moment, and the Néel temperature for the values of U and J that are close to those obtained within the constrained occupation method. The band gap is of the Mott--Hubbard type.     

DFT study on the electronic structure and chemical state of Americium in an (Am,U) mixed oxide

We investigated the electronic state of an (Am,U) mixed oxide with the fluorite structure using the all-electron full potential linear augmented plane wave method and compared it with those of Am₂O₃, AmO₂, UO₂, and La_0.5U_0.5O₂. The valence of Am in the mixed oxide was close to that of Am₂O₃ and the valence of U in the mixed oxide was pentavalent. The electronic structure of AmO₂ was different from that of Am₂O₃, particularly just above the Fermi level. In addition, the electronic states of Am and U in the mixed oxide were similar to those of trivalent Am and pentavalent U oxides. These electronic states reflected the high oxygen potential of AmO₂ and the heightened oxygen potential resulting from the addition of Am to UO₂ and also suggested the occurrence of charge transfer from Am to U in the solid solution process.     

First-principles studies on Ti3Si0.5Ge0.5C2 under pressure

The structural, electronic and elastic properties of Ti₃Si_0.5Ge_0.5C₂ have been investigated by using the pseudopotential plane-wave method within the density-functional theory. Our calculated equation of state (EOS) is consistent with the experimental results. The density of states (DOS) indicates that Ti₃Si_xGe_1−xC₂ (x=0, 0.5, 1.0) are metallic, and these compounds have nearly the same electrical conductivity. The elastic constants for Ti₃Si_0.5Ge_0.5C₂ are obtained at zero pressure, which is compared to Ti₃SiC₂ and Ti₃GeC₂. We can conclude that Ti₃Si_0.5Ge_0.5C₂ is brittle in nature by analyzing the ratio between bulk and shear moduli. There appears to be little effect on the electronic and elastic properties with the Ge substitution to Si atoms in Ti₃SiC₂.     

Ab initio study of the optical properties of crystalline phenanthrene,including the excitonic effects

Using the ab initio methods for solving the Bethe–Salpeter equation on the basis of the FPLAPW method, optical properties of crystalline phenanthrene were calculated, in a comparison to its isomer, anthracene. It was found that despite the similarity of the structural, electronic, and the overall optical properties in a 40 eV energy range, phenanthrene and anthracene show significant differences in their optical spectra in the energy range below band gaps. Phenanthrene has two spin singlet excitonic features whereas anthracene shows one. The singlet and the lowest triplet binding energies of phenanthrene were found to be larger than anthracene. In this study, in addition, a comparison has been made between the optical spectra in RPA and the existing experimental data.     

First-principles study of electronic structure and ferromagnetism in Ti-doped ZnO

We perform first-principles spin polarized calculations of the electronic structure of Ti-doped in ZnO. Ferromagnetism in Ti-doped ZnO is identified, which is in agreement with recent experimental and calculated results. A net magnetic moment of 0.715μ_B is found per Ti. At a Ti concentration of 12.5%, total energy calculations show that the ferromagnetic state is 68 meV lower than the antiferromagnetic state. The electronic states near Fermi energy are dominated by strong hybridization between O 2p and Ti 3d, which is just the origin of impurity band in Ti-doped ZnO and also implies that the Ti-O bond is quite covalent instead of purely ionic. Since there is no magnetic element in this compound, Ti-doped ZnO appears to be an unambiguous dilute magnetic semiconductor.     

Theoretical and experimental investigation on structural and electronic properties of Al/O/Al,O-doped WS2

Effects of the doping atom (O, Al, and (Al, O)) on structural and electronic properties of the monolayer WS₂ have been studied by using first-principles calculations. Results show that the covalent character of W–S bonding has been enhanced after doping. Meanwhile, W–O, Al–S and W–S bonds of (Al, O) co-doped WS₂ monolayer have higher covalent character compared with O-doped and Al-doped WS₂ monolayer of this work. After doping with Al (or Al, O) atoms, Fermi level moves close to the valence band and the dopant atoms produce the defect energy levels, indicating that Al doped and (Al, O) co-doped WS₂ monolayer both have p-type conductivity. O-doped and (Al, O) co-doped WS₂ ultrathin films was prepared on Si substrates. Results of Raman spectra show the formation of the O-doped and (Al, O) co-doped WS₂ films. Moreover, compared with the pure WS₂, the approximate reduction of 0.43 eV and 0.46 eV for W 4f and S 2p in binding energy after (Al, O) co-doped shows that p-type doping of (Al, O) co-doped WS₂ has been verified.     

Local structure and electronic properties of BaTaO2N with perovskite-type structure

First-principles calculation based on density-functional theory in the pseudo-potential approach have been performed for the total energy and crystal structure of BaTaO₂N. The calculations indicate a random occupation of the anionic positions by O and N in a cubic structure, in agreement with neutron diffraction measurements and infrared spectra. The local symmetry in the crystal is broken, maintaining a space group Pm3?m, as used in structure refinement, which represents only the statistically averaged result. The calculations also indicate displacive disordering in the crystal. The average Ta-N distance is smaller (2.003 Å), while the average Ta-O distance becomes larger (2.089 Å). The local relaxation of the atoms has an influence on the electronic structure, especially on the energy gap. BaTaO₂N is calculated to be a semiconductor with an energy gap of about 0.5 eV. The upper part of the valence band is dominated by N 2p states, while O 2p states are mainly in the lower part. The conduction band is dominated by Ta 5d states.