Effect of cationic/anionic organic surfactants on evaporation induced self assembled tin oxide nanostructured films

Tin oxide nanostructures with well defined morphologies have been obtained through an evaporation induced self assembly process. The technique has been employed using an ultrasonic nebulizer for production of aersol and its subsequent deposition onto a heated glass substrate. The precursor used for aersol production was modified by introducing cationic and anionic surfactants namely cetyl trimethyl ammonium bromide and sodium dodecyl sulphate respectively. The effect of surfactants on the structural, electrical and optical properties of self assembled tin oxide nanostructures were investigated by using X-ray diffraction, field emission scanning electroscope microscopy, two probe technique and photoluminiscence studies. The results reveal that high concentration of surfactants in the precursor solution leads to reduction in crystallite size with significant changes in the morphology of tin oxide nanostructures. Photoluminiscence studies of the nanostructures show emissions in the visible region which exhibit marked changes in the intensities upon variation of surfactants in the precursor solutions.     

Terahertz surface plasmon excitation over a bismuth thin film by an electron beam

The excitation of terahertz surface plasma wave (SPW) over bismuth thin film-glass structure by a parallel propagating electron beam is studied. The SPW phase velocity is sensitive to the thickness of bismuth film and it is driven via the Cerenkov resonance. The growth rate for terahertz radiation generation by an electron beam is obtained under small signal approximation.     

Multiple modes of surface plasmonic polaritons in transversely-truncated metal/dielectric superlattices

The surface plasmonic polariton (SPP) of a transversely-truncated metal/dielectric superlattice (SL) structure has been solved with an approximate method. The effect of inter-layer interfaces in the SL is taken into consideration efficiently in comparison with the effective-medium method. The silver/air and silver/SiO₂ SLs with a shorter period are regarded as two specific examples in numerical calculation. A series of separated SPP modes are found and highly localized at the surface, and the highest-frequency mode is the only one also predicated by the effective-medium method. These results obviously show the effect of inter-layer interfaces in the case of short period, whilst the reliability and limitation of the effective-medium method is presented as well. Because the skin depths of the modes are extremely small, the SLs can be used as ideal surface-wave waveguides.     

Spatially controlled dissolution of Ag nanoparticles in irradiated SiO2 sol-gel film

In this paper, we report the spatially controlled dissolution of silver nanoparticles in irradiated SiO₂ sol-gel films. The Ag nanoparticles have been formed in the sol-gel solution before the film deposition by adding Triton and ascorbic acid and also after the film deposition using a heat treatment at 700 °C for few minutes or at 550 °C for 6 h in reducing atmosphere. Using a spectrometer, a new view white light interferometer and a micro-thermal analyzer, we demonstrate that the silver nanoparticles can be dissolved using a continuous black ray UV lamp or with a near-infrared (NIR) femtosecond laser, due to a significantly increase in the local temperature. We confirm that the micro-thermal analyzer can be used as a new tool to study the dissolution of metallic nanoparticles in thin film if located at the surface of the films.     

Consequence of oxidant to monomer ratio on optical and structural properties of Polypyrrole thin film deposited by oxidation polymerization technique

This paper reports the effect of oxidant to monomer (O/M) ratio on optical and structural properties of Polypyrrole (PPy) thin film deposited by chemical oxidation polymerization technique. Noticeable changes have observed in the properties of PPy thin films with O/M ratio. Cauliflower structure have been observed in FE-SEM images, wherein grain size is observed to decrease with increase in O/M ratio. AFM results are in good agreement with FE-SEM results. From FTIR spectra it is found that, PPy is in highly oxidized form at low O/M ratio but oxidation decreased with increase in O/M ratio. Also C–C stretching vibrations of PPy ring is decreased whereas C=C stretching is increased with ratio. Absorption peak around 450 nm corresponds to π–π^⁎ transition and around 800 nm for polarons and bipolarons. The intensity of such peaks confirms the conductivity of PPy, which is observed maximum at low O/M ratio and found to decrease with increase in ratio. Optical band gap (BG) is found to increase from 2.07 eV to 2.11 eV with increase in the O/M ratio.     

Enhanced luminescence from spontaneously ordered Gd2O3:Eu based nanostructures

Nanostructured Gd₂O₃:Eu³⁺ and Li⁺ doped Gd₂O₃:Eu³⁺ thin films were prepared by pulsed laser ablation technique. The effects of annealing and Li⁺ doping on the structural, morphological, optical and luminescent properties are discussed. X-ray diffraction and Micro-Raman investigations indicate a phase transformation from amorphous to nanocrystalline phase and an early crystallization was observed in Li⁺ doped Gd₂O₃:Eu³⁺ thin films on annealing. AFM images of Li⁺ doped Gd₂O₃:Eu³⁺ films annealed at different temperatures especially at 973 K show a spontaneous ordering of the nanocrystals distributed uniformly all over the surface, with a hillocks (or tips) like self-assembly of nanoparticles driven by thermodynamic and kinetic considerations. Enhanced photoemission from locations corresponding to the tips suggest their use in high resolution display devices. An investigation on the photoluminescence of Gd_2−xEu_xO₃ (x=0.10) and Gd_2−x−yEu_xLi_yO₃ (x=0.10, y=0.08) thin films annealed at 973 K reveals that the enhancement in luminescence intensity of about 3.04 times on Li⁺ doping is solely due to the increase in oxygen vacancies and the flux effect of Li⁺ ions. The observed decrease in the values of asymmetric ratio from the luminescence spectra of Li⁺ doped Gd₂O₃:Eu³⁺ films at high temperature region is discussed in terms of increased EuO bond length as a result of Li⁺ doping.     

Electronic and optical properties in ZnO:Ga thin films induced by substrate stress

The effects of biaxial stress in ZnO:Ga thin films on different substrates, e.g., sapphire(0001), quartz, Si(001), and glass have been investigated by X-ray diffraction, atomic force microscopy, and electrical transport and ellipsometric measurements. A strong dependence of orientation, crystallite size, transport, and electronic properties upon the substrate-induced stress has been found. The structural properties indicate that a tensile stress exists in epitaxial ZnO:Ga films grown on sapphire, Si, and quartz, while a compressive stress appears in films grown on glass. The resistivity of the films decreased with increasing biaxial stress, which is inversely proportional to the product of the carrier concentration and Hall mobility. The refractive index n was found to decrease with increasing biaxial stress, while the optical band gap E₀ increased with stress. These behaviors are attributed to lattice contraction and the increase in the carrier concentration that is induced by the stress. Our experimental data suggest that the mechanism of substrate-induced stress is important for understanding the properties of ZnO:Ga thin films and for the fabrication of devices which use these materials.     

Multilayer thin film thickness measurement using sensitivity separation method

This paper, for the first time, proposed a new sensitivity separation (SS) method for measuring thicknesses of multilayer thin-film stack with high efficiency and accuracy. Through the analysis of the relationship between the film parameters and the mean misfit error (MSE), a parameter called sensitivity is defined. With this parameter, an estimated rational thickness is assigned to a layer with lower sensitivity first, and then the layer thickness with high sensitivity is further obtained by optimization techniques. This method will greatly reduce the searching range and increase the iterating efficiency. It is a pretreatment method and it can be used with other optimization methods. Both theory and simulation results are provided in detail. The uncertainty problems are discussed and examples are given to verify the effectiveness of this method.     

Dependence of film thickness on the electrical and optical properties of ZnO-Cu-ZnO multilayers

ZnO-Cu-ZnO multilayers were prepared by simultaneous RF magnetron sputtering of ZnO and DC magnetron sputtering of Cu. Cu films with different thickness were used as the intermediate metal layer. The optical and electrical properties of the multilayers studied by UV-vis spectrophotometer and four point probe method, respectively, shows that transmittance increases with decrease of copper thickness up to an optimum thickness of 5 nm and sheet resistance decreases with increase of thickness. Low resistivity and high transmission were obtained when the film structure has a thickness of ZnO/Cu/ZnO: 50/5/50 nm. The performance of the multilayers as transparent conducting material was better than the single layer ZnO of equal thickness.     

Optical inhomogeneity of ZnS films deposited by thermal evaporation

Zinc sulfide (ZnS) films with optical thickness (reference wavelength is 620 nm) ranging from 310 to 1240 nm were deposited on quartz substrates at room temperature by a thermal evaporation system. The structure and morphology of the films were investigated by X-ray diffraction, atomic force microscopy, respectively. The optical properties of the films were determined by in situ transmittance measurements and wideband spectra photometric measurements, respectively. The experimental results show that the films exhibit cubic structure, and the intensity of the (2 2 0) diffraction peak enhances with the increase of optical thickness. Surface grain size and surface roughness increase monotonously with increasing film thickness. Refractive indices and extinction coefficients calculated by in situ transmittance measurements are well consistent with those calculated by wideband spectra photometric measurements. Both the refractive index and packing density of the film increase as the increase of film thickness, which confirms the film is positive inhomogeneous and has an expanding columnar structure. Extinction coefficients of the films increase with increasing film thickness, which results from the increase of surface roughness.     

Synthesis and characterisations of Au-nanoparticle-doped TiO2 and CdO thin films

In the present study, pure and gold nanoparticle (Au NP)-doped titanium dioxide (TiO₂) and cadmium oxide (CdO) thin film were prepared by the sol–gel method, and the effect of Au NP doping on the optical, structural and morphological properties of these thin films was investigated. The prepared thin films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet–visible–near infrared (UV–Vis–NIR) spectra. While the optical band increases from 3.62 to 3.73 for TiO₂ thin films, it decreases from 2.20 to 1.55 for CdO thin films with increasing Au doping concentration. Analysis of XRD indicates that the intensities of peaks of the crystalline phase have increased with the increasing Au NP concentrations in all thin films. SEM images demonstrate that the surface morphologies of the samples were affected by the incorporation of Au NPs. Consequently, the most significant results of the present study are that the Au NPs can be used to modify the optical, structural and morphological properties of TiO₂ and CdO thin films.     

Determination and analysis of dispersive optical constants of CuIn3S5 thin films

CuIn₃S₅ thin films were prepared from powder by thermal evaporation under vacuum (10⁻⁶ mbar) onto glass substrates. The glass substrates were heated from 30 to 200 °C. The films were characterized for their optical properties using optical measurement techniques (transmittance and reflectance). We have determined the energy and nature of the optical transitions of films. The optical constants of the deposited films were determined in the spectral range 300-1800 nm from the analysis of transmission and reflection data. The Swanepoel envelope method was employed on the interference fringes of transmittance patterns for the determination of variation of refractive index with wavelength. Wemple-Di Domenico single oscillator model was applied to determine the optical constants such as oscillator energy E₀ and dispersion energy E_d of the films deposited at different substrate temperatures. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan.     

Magnon spectrum of a symmetric-spin nanocontact on a ferromagnetic ultrathin film

A theoretical model is presented for the study of the magnetic properties and the coherent magnon transport via monatomic chains in ultrathin magnetic films. In particular, we studied a finite number of monatomic chains joining two slabs of ferromagnetic material. Each slab consists of five atomic layers of a cubic lattice with magnetically ordered spins coupled by the Heisenberg exchange. The system is supported on a non-magnetic substrate and otherwise considered free from magnetic interactions. The spin dynamics of the ultrathin film is studied by the matching method. The individual and the total magnon transmissions of the ultrathin ferromagnetic film, scattering coherently at the nanojunction zone, and the localized spin states in the boundary domain are calculated and analyzed. The interatomic magnetic exchange is varied on the boundary domain specifically for three cases of magnetic exchange to investigate the consequences of magnetic softening and hardening for the calculated properties. Numerical results show characteristic interference effects between the incident spinwaves and the localized spin states of the nanocontact. The calculated properties are presented for arbitrary incidence of the magnons on the boundary, for all accessible frequencies in the propagating bands, and for the interatomic magnetic exchange of the magnetic film. The localized magnon branches created by the nanocontact domain are observed in the Brillouin zone.     

Optical description of HfO2/Al/HfO2 multilayer thin film devices

A three-layer system of dielectric/metal/dielectric (D/M/D) has been prepared on Marienfeld commercial glass substrates with Metal = Al, and Dielectric = HfO₂ for energy efficient windows applications. Subsequently, HfO₂/Al/HfO₂ multilayers have been deposited with 10 nm each HfO₂ layer and 5 nm thick Al layer using electron beam evaporation. The microstructural characteristics of D/M/D thin films have been investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Present results indicate the formation of HfO₂ weak polycrystals embedded in the disordered lattice. AFM data reveals quite a smooth surface involving a structure of slightly elongated grains with almost Gaussian size distribution with mean grain size in the range from 7 to 23 nm. Regarding optical properties, maximum transmittance of the D/M/D structure is noticed to occur in the UV-region, whereas reflectance rises to ∼60% in the visible to near infrared (NIR)-regions. To optimize the performance of these D/M/D devices, computer calculations have been performed by varying either the thickness of both HfO₂ layers and/or thickness of metallic Al layer. A satisfactory agreement between theoretical and experimental spectra is noticed. Such D/M/D structures can be useful in heat mirror applications involving energy efficient windows etc.     

Optical parameters of epitaxial GaN thin film on Si substrate from the reflection spectrum

A method has been proposed for determining the optical properties of a thin film layer on absorbing substrates. The film optical parameters such as thickness, refractive index, absorption coefficient, extinction coefficient and the optical energy gap of an absorbing film are retrieved from the interference fringes of the reflection spectrum at normal incidence. The envelopes of the maxima of the spectrum E_M and of the minima E_m are introduced in analytical forms to find the reflectance amplitudes at the interfaces and approximate values of the thin film refractive index. Then, the interference orders and film thickness are calculated to get accurate values of the needed optical parameters. There are no complex fitting procedures or assumed theoretical refractive index dispersion relations. The method is applied to calculate the optical properties of an epitaxial gallium nitride thin film on a silicon (1 1 1) substrate. Good agreement between our results and the published data are obtained.     

Effect of doping concentration on the structural and optical properties of pure and tin doped zinc oxide thin films by nebulizer spray pyrolysis (NSP) technique

Pure and tin doped zinc oxide (Sn:ZnO) thin films were prepared for the first time by NSP technique using aqueous solutions of zinc acetate dehydrate, tin (IV) chloride fendahydrate and methanol. X-ray diffraction patterns confirm that the films are polycrystalline in nature exhibiting hexagonal wurtzite type, with (0 0 2) as preferred orientation. The structural parameters such as lattice constant (‘a’ and ‘c’), crystallite size, dislocation density, micro strain, stress and texture coefficient were calculated from X-ray diffraction studies. Surface morphology was found to be modified with increasing Sn doping concentration. The ZnO films have high transmittance 85% in the visible region, and the transmittance is found to be decreased with the increase of Sn doping concentration. The corresponding optical band gap decreases from 3.25 to 3.08 eV. Room temperature photoluminescence reveals the sharp emission of strong UV peak at 400 nm (3.10 eV) and a strong sharp green luminescence at 528 nm (2.34 eV) in the Sn doped ZnO films. The electrical resistivity is found to be 10⁶ Ω-cm at higher temperature and 10⁵ Ω-cm at lower temperature.     

Derivation of the optical constants of spin coated CeO2-TiO2-ZrO2 thin films prepared by sol-gel route

Ternary thin films of cerium titanium zirconium mixed oxide were prepared by the sol-gel process and deposited by a spin coating technique at different spin speeds (1000-4000 rpm). Ceric ammonium nitrate, Ce(NO₃)₆(NH₄)₂, titanium butoxide, Ti[O(CH₂)₃CH₃]₄, and zirconium propoxide, Zr(OCH₂CH₂CH₃)₄, were used as starting materials. Differential calorimetric analysis (DSC) and thermogravimetric analysis (TGA) were carried out on the CeO₂-TiO₂-ZrO₂ gel to study the decomposition and phase transition of the gel. For molecular, structural, elemental, and morphological characterization of the films, Fourier Transform Infrared (FTIR) spectral analysis, X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), cross-sectional scanning electron microscopy (SEM), and atomic force microscopy (AFM) were carried out. All the ternary oxide thin films were amorphous. The optical constants (refractive index, extinction coefficient, band gap) and thickness of the films were determined in the 350-1000 nm wavelength range by using an nkd spectrophotometer. The refractive index, extinction coefficient, and thickness of the films were changed by varying the spin speed. The oscillator and dispersion energies were obtained using the Wemple-DiDomenico dispersion relationship. The optical band gap is independent of the spin speed and has a value of about E_g≈2.82±0.04 eV for indirect transition.     

Structure, thermally and optically induced effects in amorphous As2Se3 films prepared by pulsed laser deposition

Thin amorphous As-Se films were prepared by pulsed laser deposition (PLD) and by classical thermal evaporation techniques. Raman spectra and optical properties (optical gap, E_g^opt, index of refraction, n, third-order non-linear susceptibility, χ⁽³⁾) of prepared films and their photo- and thermally induced changes were studied. The structure of laser deposited films was close to the corresponding bulk glasses contrary to thermal evaporated films. The composition of PLD films was practically unchanged during the process of deposition. The optically and thermally induced changes of n and of E_g^opt in PLD films are different from the changes in thermally deposited films. The differences are discussed.     

Red luminescence in ZnO films prepared by a glycol-based Pechini method

ZnO thin films on fused quartz substrates were prepared by a glycol-based Pechini method. The structural and optical properties were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance spectrum, and photoluminescence (PL) spectrum. A red emission around 700 nm was found in PL spectrum, and its peak intensity gained a strong enhancement (140%) while annealing temperature increased from 700 °C to 800 °C. The red emission was ascribed to the possible high defect density in boundary layers of nanocrystalline grains.     

Correlation between structural changes and luminescent properties of ZnMgS:Mn thin film phosphor with annealing temperature

With varying rapid thermal annealing temperature, luminescent properties of Zn_0.75Mg_0.25S:Mn thin film deposited by RF-magnetron sputtering technique were investigated. Although all samples were deposited from identical source composition, it was found that a main peak wavelength of photoluminescence of Zn_0.75Mg_0.25S:Mn depended on RTA temperatures and it shifted toward shorter wavelength upon the increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It is noticeable that Zn_0.75Mg_0.25S:Mn thin film phosphor in this study showed more reddish emission than those of the previous studies.It was revealed that changes of the luminescent properties were originated from structural changes in Zn_0.75Mg_0.25S:Mn thin film phosphor from cubic to hexagonal phases using X-ray pole figure mapping, and the growing up of hexagonal phase mainly caused cracks and porous morphology on the surface of thin films. It is suggested that the phase transition would be the origin of luminescent property changes with respect to rapid thermal annealing temperature.