Macroscopic polarization and thermal conductivity of GaN

We theoretically investigated the effect of macroscopic polarization (sum of spontaneous and piezoelectric polarization) on the thermal conductivity of wurtzite GaN. Macroscopic polarization contributes to the effective elastic constant of the GaN and thus modifies the phonon group velocity. We used the revised phonon velocity to estimate the Debye frequency and temperature. Different phonon scattering rates were calculated as functions of the phonon frequency. The thermal conductivity of GaN was estimated using revised parameters such as the phonon velocity and phonon relaxation rate. The revised thermal conductivity at room temperature increased from 250 to 279 W m⁻¹ K⁻¹ due to macroscopic polarization. The method we developed can be used for thermal budget calculations for GaN optoelectronic devices.     

Heat conduction in extended X-junctions of single-walled carbon nanotubes

Non-equilibrium molecular dynamics (NEMD) simulations are employed to investigate the longitudinal thermal conductivity of non-orthogonal extended X-junction (EX-junction) of single-walled carbon nanotubes (SWCNTs). Different from standard junctions of SWCNTs, two distinct jumps in the temperature profile around the EX-junction are observed, which are responsible for the larger temperature gradient and reduction in thermal conductivity when compared to standard X-junction. Quantum corrected results show that the longitudinal thermal resistance of the X-junction and EX-junction decreases monotonically with increasing temperature which makes the longitudinal thermal conductivity of the tube with junction less sensitive to temperature above 400 K comparing with the individual pristine tube. The origin of the significant decrease of thermal conductivity of EX-junction is discussed through phonon spectra analysis.     

Effects of non-equilibrium polar optic phonons and the band non-parabolicity on small signal high-frequency hot electrons ac mobility in narrow gap semiconductors in high magnetic fields

The small signal high-frequency ac mobility of hot electrons in n-HgCdTe in the extreme quantum limit at low and high temperatures have been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distribution .The energy loss rate has been calculated considering only optical phonon scattering while the momentum loss rate has been calculated considering acoustic phonon scattering and piezoelectric scattering together with polar optical phonon scattering and separately considering only the polar optical scattering. The results have been discussed and compared. It has been observed that at 20 K, the normalized mobility considering all the three scattering mechanisms differs appreciably from that considering only the polar optical phonon scattering. However, at 77 K, there is no difference in the normalized mobility. This establishes the fact that at higher temperature, the effect of acoustic phonon scattering and piezoelectric coupling is negligible, compared to the polar optical phonon scattering. So the ac mobility considering only polar optical phonon scattering has been studied at 77 and 20 K. The ac mobility is found to remain constant up to 100 GHz and thereafter it started decreasing at higher frequencies at 77 K whereas the ac mobility reduces at much lower frequencies at lower temperature at lower field. The non-parabolicity of the band structure enhances the normalized mobility.     

The effect of phonon anisotropic scattering on the thermal conductivity of silicon thin films at 300K and 400K

Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice directions, as observed by a difference in in-plane and cross-plane thermal conductivities. Our current work intends to study the effect of anisotropy scattering on silicon thermal conductivity at 300 K and 400 K. We adopt the Henyey and Greenstein probability density function in our phonon Monte Carlo simulation to investigate the effect of highly forward and backward scattering events. The impact of applying the anisotropy scattering using this approach is discussed in detail. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect on thermal conductivity than backward scattering.     

Thermoelectric properties of Ge-doped Bi85Sb15 alloys at low temperatures

Bulk polycrystalline Bi₈₅Sb_15−xGe_x (x=0, 0.5, 1, 1.5, 2) composites were prepared by mechanical alloying followed by pressureless sintering. The thermoelectric properties were studied in the temperature range of 77–300 K. The results indicate that increasing the Ge concentration causes the Seebeck coefficient to change sign from negative to positive. Moreover, it is found that the maximum value of the Seebeck coefficient can be precisely controlled with the Ge concentration. The maximum dimensionless figure of merit reaches 0.07 at 140 K. These results suggest that the preparation of p-type Bi–Sb alloys is possible by using the Ge-doping approach.     

Thermal conductivity for single-walled carbon nanotubes from Einstein relation in molecular dynamics

Equilibrium molecular dynamics based Einstein relation with an appropriate definition for integrated heat current (i.e., with modified energy moment) are combined to quantify the thermal conductivity of individual single-walled carbon nanotubes, armchair, zigzag and chiral tubes. The thermal conductivity has been investigated as a function of three parameters, tube radius, length and chirality at and near room temperature with Brenner potential model. Thermal conductivity is found to have unusually high value and varies with radius, length and chirality of tubes. Also the thermal conductivity at temperature range from 50 to 100 K is found to have a maximum value. For 12.1 nm tube length, the thermal conductivity has converging trend which its value dependents on the tube radius and chirality. Tubes with large radius have lower values of thermal conductivity. Furthermore, the results show that armchair tubes have large values of the thermal conductivity comparing with zigzag and chiral tubes. It seems possible to uncover carbon nanotubes thermal properties based on measurements having heat dependence by adding another methods for calculations.     

Microstructure and thermoelectric properties of Zn1−xAlxO ceramics fabricated by spark plasma sintering

Al-doped ZnO powders were synthesized via solid reaction between Zn(OH)₂ and Al(OH)₃ and consolidated by spark plasma sintering (SPS) to fabricate fine-grained Zn_1−xAl_xO ceramics as a thermoelectric material. X-ray diffraction and spectrophotometer experiments revealed that Al doping into ZnO is enhanced by the present process, and consequently the SPS-processed Zn_1−xAl_xO samples show significantly improved electrical conductivity as compared with those prepared via mixing ZnO and Al₂O₃ oxide powders. Because of the combined effect of Al doping and grain refinement, the present Zn_1−xAl_xO ceramics show much lower thermal conductivity, which also results in an enhanced dimensionless figure of merit (ZT), than un-doped ZnO oxides prepared also by SPS.     

Negative boron isotope effect of a ‘2Δ’ gap peak in Raman spectra from non-magnetic borocarbide superconductors

The nickel borocarbides RNi₂B₂C, R=Y or Lu, have a superconducting T_c of 15-16 K and exhibit properties consistent with an anisotropic s-wave gap. We briefly review their properties. Electronic Raman scattering results are presented on YNi₂B₂C containing ¹¹B or ¹⁰B. In A_1g and B_1g Raman symmetries, there is no shift in the position of the ‘2Δ’ peak with B-isotope. There is a distinct negative shift, however, in B_2g symmetry. This is interpreted as a negative isotope shift for the gap Δ on that portion of the Fermi surface where the magnitude of the B_2g Raman vertex is large.     

A first-principles study of vibrational modes in Cu2O and Ag2O crystals

A first-principles investigation of cuprite crystals (Cu₂O and Ag₂O) has been performed. For Cu₂O, the calculated frequencies at the Γ point of the Brillouin zone are in very good agreement with the experimental frequencies. For Ag₂O, the presence of E_u and F_2u vibrational modes with negative frequencies indicates a low temperature phase transition, in agreement with recent high resolution X-ray and neutron diffraction measurements. The energy scanning along these two modes shows a double-well potential, within which only the Ag atoms vibrate. As a result, the origin of the phase transition can be attributed to displacive disorder of the Ag atoms.     

D-wave superconductivity in doped Mott insulators

The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase are distinguished by different variation with doping of the parameters in the action. A crucial issue is found to be the doping dependence of the quasiparticle charge which is defined here and which controls the temperature and field dependence of the electromagnetic response functions. Presently available data on high-T_c superconductors are analyzed. The data, while neither complete nor entirely consistent, suggest that neither the quasiparticle velocity nor the quasiparticle charge vanish as the Mott phase is approached, in contradiction to the predictions of several widely studied theories of lightly doped Mott insulators. Implications of the results for the structure of vortices in high-T_c superconductors are determined.     

Thermal conductivity of silver doped lanthanum manganites between 10 and 300 K

Thermal conductivity (λ) of nanocrystalline La_1−xAg_xMnO₃ (x=0.05, 0.15, 0.25, 0.3) pellets prepared by pyrophoric method is reported between 10 and 300 K. Magnitude of thermal conductivity has been found to be strongly influenced by monovalent (Ag) substitution at the La site. Silver doping in LaMnO₃ enhances T_C of the system to ∼299 K. Qualitative nature of the temperature variation of thermal conductivity of the silver substituted lanthanum manganites remains closely similar to that for divalent doped systems. Our analysis demonstrates that in La_1−xAg_xMnO₃ also, the mechanism of heat conduction is predominantly by phonons. The contribution of the electronic part is only ∼1% of the total λ. The spin wave contribution is also estimated close to T_C, which for all the samples lies within ∼2%. At temperatures below ∼100 K, the measured data have been analyzed using phonon relaxation time method and the strengths of the various phonon scattering processes have been estimated. Our analysis further suggests strong influence of phonon scattering by 2D like defects in the thermal conductivity of monovalent doped lanthanum manganites at low temperatures (<70 K) in the ferromagnetic region.     

Thermoelectric performance of ternary Bi-Sb-Ag alloys prepared by mechanical alloying and subsequent pressureless sintering

The alloys with the general formula of Bi₈₅Sb_15−xAg_x (x=0, 1, 3, 5, 7) were prepared by mechanical alloying and subsequent pressureless sintering (Bi₈₅Sb₁₅ alloy was used for comparison). Their transport properties involving electrical conductivity, Seebeck coefficient, and thermal conductivity had been investigated in the temperature range of 80-300 K. The maximum absolute value of Seebeck coefficient (120 μV/K) was found at 160 K in the alloy Bi₈₅Sb_15−xAg_x (x=3). The figure-of-merit of alloy Bi₈₅Sb_15−xAg_x (x=1) reached a maximum value of 2.16×10⁻³ K⁻¹ at 219 K, which is as large again as that of the reference sample Bi₈₅Sb₁₅.     

Thermal conductivities of solid and liquid phases for neopentylglycol, aminomethylpropanediol and their binary alloy

The variations of thermal conductivities of solid phases versus temperature for neopentylglycol (NPG), 2-amino-2-methyl-1,3-propanediol (AMPD) and AMPD-42.2 mol% NPG alloy were measured with a radial heat flow apparatus. From the graphs of the solid phases thermal conductivity variations versus temperature, the thermal conductivities of the solid phases at their melting temperature and temperature coefficients for same materials were also found to be 0.22±0.01, 0.45±0.02 and 0.32±0.02 W/Km and 0.0047, 0.0031 and 0.0043 K⁻¹, respectively. The thermal conductivity ratios of liquid phase to solid phase for the same materials at their melting temperature are found to be 1.07, 1.12 and 0.74 with a Bridgman type directional solidification apparatus, respectively. Thus, the thermal conductivities of liquid phases for pure NPG, pure AMPD and AMPD-42.2 mol% NPG alloy at their melting temperature were evaluated to be 0.24, 0.50 and 0.23 W/Km, respectively, by using the values of solid phase thermal conductivities and the thermal conductivity ratios of liquid phase to solid phase.     

Lattice dynamics of II-VI mixed semiconductor ZnS1−xSex

Lattice dynamical properties of II-VI compounds having zinc-blende structure have been calculated by three-body shell model. This model incorporates the effect of the short-range repulsive interactions up to and including the second nearest neighbours, in addition to the long-range Coulombic interactions in the frame work of the rigid-shell model with both the ions are polarizable. The model involves in total eleven disposable parameters. Using the above proposed model the phonon dispersion relations for mixed II-VI semiconductor ZnS_1−xSe_x are plotted. We find an overall good agreement with the experimental results. The application of the present model has been made to calculate the phonon dispersion relations of ZnS, ZnSe and mixed semiconductor ZnS_1−xSe_x. The comparison of the theoretical results with the available experimental has been made along high symmetry directions. A reasonably good agreement is observed between theory and experiments.     

Screening effect of Ti ions on the electrical conductivity and thermoelectric power of Mg ferrite

The samples Mg_1+xTi_xFe_2−2xO₄ were prepared in a single phase spinel structure as indicated from X-ray analysis. The preference of Mg²⁺ ions to the octahedral site decreases the ratio of the normal spinel in the investigated ferrite where the Mg²⁺ increases on the expense of the Fe³⁺ ions on the same site. The increase in the conductivity was found to be due to thermally activated mobility of charge carriers. The mobility data enhances the use of Verway model of conductivity which depends on the electron exchange between iron ions of different valences located on the same crystallographic sites. The existence of Ti⁴⁺ ions on the octahedral site screens the polarization and decreases the conductivity of the samples. Peculiar behavior was obtained for Ti content of 0.7 and 0.8 due to the presence of secondary phases.     

Ultrasonic wave propagation in IIIrd group nitrides

The ultrasonic attenuation in hexagonal structured (wurtzite) third group nitrides (GaN, AlN and InN) has been evaluated at 300 K for an ultrasonic wave propagating along the unique axis of the crystal. Higher order elastic constants of these materials are calculated using the Lennard-Jones potential for the determination of ultrasonic attenuation. The ultrasonic velocity, Debye average velocity, thermal relaxation time and acoustic coupling constant are evaluated along the z-axis of the crystal using the second order elastic constants and other related parameters. The contributions of the elastic constants, thermal conductivity, thermal energy density, ultrasonic velocity and acoustic coupling constant to the total attenuation are studied. On the basis of the ultrasonic attenuation, it can be concluded that the AlN is more ductile than either GaN or InN at 300 K. Orientation dependent characterization has been achieved by calculation of the orientation dependent ultrasonic velocity, Debye average velocity and thermal relaxation time for the materials.     

Thermoelectric properties of Cr1−xMoxSi2

The thermoelectric properties of Mo-substituted CrSi₂ were studied. Dense polycrystalline samples of Mo-substituted hexagonal C40 phase Cr_1−xMo_xSi₂ (x=0–0.30) were fabricated by arc melting followed by spark plasma sintering. Mo substitution substantially increases the carrier concentration. The lattice thermal conductivity of CrSi₂ at room temperature was reduced from 9.0 to 4.5 W m⁻¹ K⁻¹ by Mo substitution due to enhanced phonon–impurity scattering. The thermoelectric figure of merit, ZT, increases with increasing Mo content because of the reduced lattice thermal conductivity. The maximum ZT value obtained in the present study was 0.23 at 800 K, which was observed for the sample with x=0.30. This value is significantly greater than that of undoped CrSi₂ (ZT=0.13).     

Effect of Bi-doping and Mg-excess on the thermoelectric properties of Mg2Si materials

In this work, Bi-doped magnesium silicide compounds were prepared by applying a combination of both, short-time ball milling and heating treatment. The effect of Mg excess was also studied, aiming towards further improvement in thermoelectric properties. The structural modifications of all materials were followed by Powder X-ray diffraction and Scanning Electron Microscopy. Highly dense pellets of Mg₂Si_1−xBi_x (0≤x≤0.035) and Mg_2+δSi_0.975Bi_0.025 (δ=0.04, 0.06 and 0.12) were fabricated via hot pressing and studied in terms of Seebeck coefficient, electrical and thermal conductivities and free carrier concentration. Their thermoelectric performance, at high temperature range, is presented and the maximum value of the dimensionless-figure-of-merit (ZT) is found to be 0.68 at 810 K, for Mg₂Si_0.97Bi_0.03.     

Thermal conductivity of hydrogenated amorphous silicon

The thermal conductivity of amorphous silicon thin films is measured in one dimension steady state condition. The experimental method is based on heating the sample front surface and monitoring the temperatures at its two sides. The experiments were carried out in conditions ensuring one-direction heat flow from top to bottom throughout the sample thickness. Sputtered a-Si:H films prepared with different conditions are used in order to investigate the dependence of thermal conductivity on material properties (i.e. hydrogen content and microstructure). The results show that, firstly, amorphous silicon is a very bad thermal conductor material. Secondly, the disorder in the film network plays an important role in thermal conduction. The highly disordered film exhibits the lowest thermal conductivity.     

Multi-phonon capture of charge carriers by dislocation kinks in semiconductors

In view of the problem of recombination-enhanced motion of dislocations in semiconductors, we studied the thermal capture of an electron by a smooth dislocation kink. Multi-phonon capture becomes possible due to localization of the carrier on the kink. The localized state on the smooth kink is studied in the deformation potential approximation. In this case the potential created by the kink is described by Poschl-Teller function, which enables to find the analytical expressions for the eigenstates and the corresponding wave functions. With the use of the ground state wave function we find the multi-phonon capture cross-section for two limiting temperature cases, corresponding to the thermally activated and quantum transitions between vibronic terms.