Comparison of electrical discharge techniques for nonthermal plasmaprocessing of NO in N2

This paper presents a comparative assessment of three types of electrical discharge reactors: 1) pulsed corona, 2) dielectric-barrier discharge, and 3) dielectric-pellet bed reactor. The emphasis is on the efficiency for electron-impact dissociation of N₂(e+N₂ →e+N+N) and the subsequent chemical reduction of NO by nitrogen atoms (N+NO→N₂+O). By measuring the concentration of NO as a function of input energy density in dilute mixtures of NO in N₂, it is possible to determine the specific energy cost for the dissociation of N₂. Our experimental results show that the specific energy consumption (eV per NO molecule reduced) of different types of electrical discharge reactors are all similar. These results imply that, during radical production in electrical discharge reactors, the electric field experienced by the plasma is space-charge shielded to approximately the same value. The specific energy consumption for the dissociation of N₂ using electrical discharge processing is measured to be around 240 eV per nitrogen atom produced. In the NO-N₂ mixture, this corresponds to a specific energy consumption of around 240 eV per NO molecule reduced     

Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Preferred crystal orientation and low electrical resistivity are required for ZrN_x films applied in electronic devices. In this paper, effects of N₂:(N₂+Ar) flow ratio (F(N₂)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N₂) (4–24%), the films show fcc NaCl structure. While for F(N₂) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N₂) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.     

Integrated band intensities in N2O4 in the infrared range

We have measured the integrated band intensities of the ν₉ and ν₁₁ bands of N₂O₄ which are observed around 1757 and 1261 cm^-1, respectively. By varying temperature and pressure, we have obtained: S_band(ν₉) = 9.60(130), 9.10(24), 8.80(66) and S_band(ν₁₁)= 5.93(64), 5.70(21) and 5.33(46) (in 10^-17 cm/molecule) at 293.15 (60), 277.25 (60) and 261.65 (60) K, respectively.     

Mechanical anisotropy and electronic properties of X2N2 (XH2 ): first-principles calculations*

The mechanical anisotropy, structural properties, electronic band structures and thermal properties of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are detailed and investigated in this work. The novel silicon nitride phase Si₂ N₂ (SiH₂ ) and germanium nitride phase Ge₂ N₂ (GeH₂ ) in the Cmc 2₁ structure are proposed in this work. The novel proposed Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are both mechanically and dynamically stable. The electronic band calculation of the HSE06 hybrid functional shows that C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are all wide band gap semiconductor materials, and C₂ N₂ (CH₂ ) and Si₂ N₂ (SiH₂ ) are direct band gap semiconductor materials, while Ge₂ N₂ (GeH₂ ) is a quasi-direct band gap semiconductor material, the band gap of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are 5.634 eV, 3.013 eV, and 2.377 eV, respectively. The three-dimensional and plane distributions of Young’s modulus, shear modulus and Poisson’s ratio of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) show that these materials have different degrees of mechanical anisotropy. The order of Young’s modulus of Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) in different directions is different from that of C₂ N₂ (CH₂ ). When the tensile axis is in a particular direction, the order of the Young’s modulus of Si₂ N₂ (SiH₂ ): E _[110] <E _[120] <E _[111] <E _[101] <E _[010] =E _[100] <E _[011] <E _[001], and the order of the Young’s modulus of Ge₂ N₂ (GeH₂ ): E _[110] <E _[111] <E _[101] <E _[120] <E _[100] <E _[010] <E _[011] <E _[001] .     

Adsorption of N2 and N2O on Ni(7 5 5) surface: ab initio periodic density functional study

Adsorption of N₂ and N₂O at various sites on Ni(7 5 5) has been investigated by density functional theory (DFT) method (periodic DMol³). Several possible adsorption structures (attaching the nitrogen atom to the surface, or lying parallel) are found for both molecules. There is a clear binding energy preference of N₂ and N₂O for step sites in contrast to the case of CO. It is revealed that the decomposition of N₂O occurs exclusively near the step, but not on the terrace. Two decomposition channels can be considered; dissociative adsorption and spontaneous decomposition during TPD ramp. Three possible candidates for the precursor of the spontaneous decomposition of N₂O during TPD ramp are discussed.     

The sticking and dissociation of NH3 on W(110): a three-state model

The kinetics of the adsorption of NH₃ on W(110) and its subsequent dissociation have been investigated using molecular beam techniques and temperature programmed desorption (TPD) for surface temperatures ranging from 140 to 700 K. NH₃ shows a wide desorption peak around 270 K and a smaller peak at 170 K while H₂ and N₂, produced by dissociation, desorbed at 550 and 1350 K, respectively, with kinetic parameters similar to those reported for H and N generated by adsorption of H₂ and N₂. At normal incidence and for a surface temperature of 140 K, the NH₃ sticking coefficient was found to decrease from unity at a beam energy of 0.8 kcal/mol to 0.5 for a beam energy of 5.4 kcal/mol. The sticking coefficient generally decreases with surface temperature to a value of 0.05 at 700 K, but, for a 5.4 kcal/mol beam, it exhibits a relative minimum near 300 K. The reflection coefficient of NH₃, for an angle of incidence of 49°, increases with temperature and incident beam energy in agreement with the sticking measurements. The TPD peak positions, sticking and reflection data are all well reproduced by a three-state model based on simple kinetics. The model assumes that NH₃ initially traps in a molecular state and that dissociation occurs by thermal activation into an intermediate state. At no temperature is the sticking probability enhanced by increasing the kinetic energy of the incident molecules and there is no evidence for a direct dissociation channel which has a translational energy barrier less than 5.4 kcal/mol.     

Formation of Mo and MoSx nanoparticles on Au(1 1 1) from Mo(CO)6 and S2 precursors: electronic and chemical properties

Mo(CO)₆ can be useful as a precursor for the preparation of Mo and MoS_x nanoparticles on a Au(1 1 1) substrate. On this surface the carbonyl adsorbs intact at 100 K and desorbs at temperatures lower than 300 K. Under these conditions, the dissociation of the Mo(CO)₆ molecule is negligible and a desorption channel clearly dominates. An efficient dissociation channel was found after dosing Mo(CO)₆ at high temperatures (>400 K). The decomposition of Mo(CO)₆ yields the small coverages of pure Mo that are necessary for the formation of Mo nanoclusters on the Au(1 1 1) substrate. At large coverages of Mo (>0.15 ML), the dissociation of Mo(CO)₆ produces also C and O adatoms. Mo nanoclusters bonded to Au(1 1 1) exhibit a surprising low reactivity towards CO. Mo/Au(1 1 1) surfaces with Mo coverages below 0.1 ML adsorb the CO molecule weakly (desorption temperature<400 K) and do not induce C–O bond cleavage. These systems, however, are able to induce the dissociation of thiophene at temperatures below 300 K and react with sulfur probably to form MoS_x nanoparticles. The formed MoS_x species are more reactive towards thiophene than extended MoS₂(0 0 0 2) surfaces, MoS_x films or MoS_x/Al₂O₃ catalysts. This could be a consequence of special adsorption sites and/or distinctive electronic properties that favor bonding interactions with sulfur-containing molecules.     

N2H4在NiFe(111)合金表面吸附稳定性和电子结构的第一性原理研究

采用基于色散校正的密度泛函理论进行了第一性原理研究, 详细分析了肼(N₂H₄)在Ni₈Fe₈/Ni(111)合金表面稳定吸附构型的吸附稳定性和电子结构及成键性质. 通过比较发现, 肼分子以桥接方式吸附在表面的两个Fe原子上是最稳定的吸附构型, 其吸附能为-1.578 eV/N₂H₄. 同时发现, 肼分子在这一表面上吸附稳定性的趋势为: 桥位比顶位吸附更有利, 且在Fe原子上比在Ni原子上的吸附作用更强. 进一步分析了不同吸附位点上稳定吸附构型的电子结构、电荷密度转移以及电子局域化情况. 结果发现: 相同吸附位点的电子态密度图基本一致, 并且N原子的p轨道和与之相互作用的表面原子的d轨道之间存在态密度上的重叠; 吸附后电荷密度则主要从肼分子转移到表面原子之上; 在电子局域化函数切面图中也发现吸附后电子被局域到肼分子的N原子和相邻的表面原子之间. 这些电子结构的表征都充分说明肼分子与表面原子之间通过电荷转移形成了强烈的配位共价作用.     

Adsorbed state and vibrational excitation of N2 on Pd(110)

High-resolution vibrational electron energy loss spectroscopy, low-energy electron diffraction and Auger electron spectroscopy have been used to study the interactions of nitrogen with the Pd(110) surface. At 120 K, N₂ is chemisorbed molecularly on the Pd(110) surface, and the (2 × 1)-N₂ structure is formed. Most probably, the N₂ molecules are chemisorbed in the on-top sites of the bulk-like Pd(110) surface in the upright-linear structure. The Pd---N₂ bond energy is estimated to be ˜ 6 kcal/mol. The Pd---N₂ and N---N stretching vibrations of N₂ admolecules on Pd(110) are observed at 30 and 278 meV, respectively. The primary-energy dependence and angle dependence of their excitation cross sections agree reasonably well with the prediction of the dipole theory. The electron beam-induced effects are briefly discussed.     

ab initio Study of Electronic Structure and Magnetic Properties of a Novel Two-Dimensional Copper(II)-Radical Complex [Cu(NTTmPy)2(N3)2]n

The full-potential linearized augmented plane wave (FPLAPW) method with the generalized gradient approximations (GGA) is applied to study the compound [Cu(NTTmPy)₂(N₃)₂]_n (NITmPy=2-(3'-Pyridy1)-4, 4, 5, 5-tetramethylimidazolin-1-oxy1-3-oxide). The total density of states (DOS) and the partial density of states (pDOS) are calculated to explain the electronic and the magnetic properties of [Cu(NTTmPy)₂(N₃)₂]_n. It is found that [Cu(NTTmPy)₂(N₃)₂]_n is stable in the ferromagnetic state and the magnetic moment of the molecule mainly comes from the Cu atoms (0.518 μ_B) with partial contribution from N, O atoms of nitronyl nitroxide radicals. There exist orbital hybridization between 3d orbital of Cu and p orbitals of N(1) (from pyridyl rings of the NITmPy ligands) and N(4) (from azido group) and the weak direct exchange interactions between Cu and O atoms of nitronyl nitroxides. In addition, the bridging carbon atom (C(6)) carries a significant negative spin density (-0.019μ_B). The sign alternation of the magnetic moment along the pyridyl ring is obtained, which agrees with experiments.     

ZnSb掺杂的Ge2Sb2Te5薄膜的相变性能研究

本文采用双靶(ZnSb靶和Ge₂Sb₂Te₅靶)共溅射制备了系列ZnSb掺杂的Ge₂Sb₂Te₅(GST)薄膜. 利用X射线衍射、透射电子显微镜、原位等温/变温电阻测量、X射线光电子能谱等测试研究了薄膜样品的非晶形态、电学及原子成键特性. 利用等温原位电阻测试表明ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更高的结晶温度. 采用Arrhenius 公式计算发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜的十年数据保持温度均高于传统的Ge₂Sb₂Te₅薄膜的88.9℃. 薄膜在200, 250, 300和350℃ 下退火后的X射线衍射图谱表明ZnSb的掺杂抑制了Ge₂Sb₂Te₅薄膜从fcc态到hex态的转变. 通过对薄膜的光电子能谱和透射电镜分析可知Zn, Sb, Te原子之间键进行重组, 形成Zn–Sb 和Zn–Te 键, 且构成非晶物质存在于晶体周围. 采用相变静态检测仪测试样品的相变行为发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更快的结晶速度. 特别是(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜, 其结晶温度达到250℃, 十年数据保持温度达到130.1℃, 并且在70 mW激光脉冲功率下晶化时间仅～64 ns, 远快于传统Ge₂Sb₂Te₅薄膜的晶化时间～280 ns. 以上结果表明(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜是一种热稳定性好且结晶速度快的相变存储材料.     

X-ray diffraction studies of epitaxy in orthorhombic- DyMnO3/Er1Ba2Cu3O7-δ thin film heterostructures on LaAlO3 (100) substrates

The heteroepitaxy in DyMnO₃/Er₁Ba₂Cu₃O_7-δ bilayer thin films on LaAlO₃ (100) substates was characterized by four-circle X-ray diffractometry. The Er₁Ba₂Cu₃O_7-δ thin films on LaAlO₃ (100) substrates were prepared by molecular-beam deposition (MBD) and post-growth annealing in wet and dry O₂ at 880°C, whereas the DyMnO₃ thin films on the Er₁Ba₂Cu₃O_7-δ/LaAlO₃ (100) heterostructure were deposited by MBD and post-growth annealing in dry O₂ at 750°C. The conventional X-ray diffraction (XRD) patterns as well as pole figures (φ-scans) for specific (hkl) reflections were acquired. The Er₁Ba₂Cu₃O_7-δ thin film in the DyMnO₃/Er₁Ba₂Cu₃O_7-δ/LaAlO₃ (100) heterostructure showed [001] oriented epitaxial growth, as expected. The DyMnO₃ thin film on the Er₁Ba₂Cu₃O_7-δ epilayer in the heterostructure grew with (110) epitaxy in its metastable orthorhombic phase (lattice constants: a_o=5.272 Å, b_o=5.795 Å and c_o=7.38 Å). The heteroepitaxial relationships at the orthorhombic-DyMnO O₃ (110) /Er₁Ba₂Cu₃O_7-δ (001) interface was determined as the following: DyMnO₃ (110) Er₁Ba₂Cu₃O_7-δ (001), DyMnO₃ [1 0] ¶r; Er₁Ba₂Cu₃O_7-δ[100] or Er₁Ba₂Cu₃O_7-δ[010], and DyMnO₃ [001] ¶r; Er₁Ba₂Cu₃O _7-δ[010] or Er₁Ba₂Cu₃O_7-δ [100].     

Nitridation of thin SiO2 films in N2 and NH3 plasmas

A low-temperature (700°C) plasma-enhanced nitridation process which improves the dielectric breakdown of thin silicon dioxide (SiO₂) layers is presented. It uses a new, production compatible, parallel plate plasma reactor working at low RF frequencies. Nitrided oxides produce less charge trapping under high field stress, higher breakdown charge and a tighter distribution of breakdown fields than pure SiO₂. More nitrogen is incorporated in films treated in a NH₃ plasma than in a N₂ plasma. However, the latter present better electrical properties.     

Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N₂ gas was used as both nitrogen source and carrier gas. The sp³-bonded C---N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline - and β-C₃N₄ as well as graphitic-C₃N₄ and β-Si₃N₄ which were not easily distinguished. Raman spectroscopy also suggested the existence of - and β-C₃N₄ in the films. X-ray photoelectron spectroscopy study indicated the presence of sp²- and sp³-bonded C---N structures in the films while sp³C---N bonding structure predominated to the sp² C---N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN_x:Si, where x depends on the film depth, with some evidences of crystalline C₃N₄ formation.     

铥原子收敛于4f13(2F7/2o)6s(7/2,1/2)4o和4f13(2F7/2o)6s(7/2,1/2)3o偶宇称里德伯系列能级的电子关联效应

本文在多通道量子亏损理论框架下,利用相对论多通道理论,计算了铥原子收敛于4f¹³（²F_7/2^o）6s（7/2,1/2）₄^o和4f¹³（²F_7/2^o）6s（7/2,1/2）₃^o的三个偶宇称里德伯系列.通过将计算结果与美国国家标准与技术研究院数据进行比较,展示了两种类型的电子关联效应：1）里德伯系列之间的相互作用,导致里德伯系列的能级出现整体偏移;2）一个孤立的干扰态镶嵌在一个里德伯系列中,破坏了该里德伯系列能级的规则性.     

SrZn2(PO4)2:Sn2+,Mn2+荧光粉的发光性质及其能量传递机理

采用高温固相法制备了SrZn₂(PO₄)₂:Sn²⁺(SZ₂P:Sn²⁺), SrZn₂(PO₄)₂:Mn²⁺(SZ₂P:Mn²⁺), SrZn₂ (PO₄)₂:Sn²⁺, Mn²⁺(SZ₂P:Sn²⁺, Mn²⁺) 荧光粉. 通过X射线衍射、激发和发射光谱详细研究了荧光粉的物相和发光性质. 在SrZn₂(PO₄)₂ 基质中, Sn²⁺离子发射光谱是峰值位于461 nm宽带谱, 归属于Sn²⁺离子的³P₁→¹S₀能级跃迁, SZ₂P:Mn²⁺激发光谱由基质吸收带(200–300 nm)和位于352, 373, 419, 431和466 nm的一系列激发峰组成, 分别对应Mn²⁺离子的⁶A₁(⁶S)→⁴E(⁴D), ⁶A₁(⁶S)→⁴T₂(⁴D), ⁶A₁(⁶S)→[⁴A₁(⁴G), ⁴E(⁴G)], ⁶A₁(⁶S)→⁴T₂(⁴G)和⁶A₁(⁶S)→⁴T₁(⁴G)能级跃迁, 因此, SZ₂P:Sn²⁺ 的发射光谱与SZ₂P:Mn²⁺的激发光谱有较大范围的重叠. 结果表明Sn²⁺对Mn²⁺发光有明显的敏化作用. 基于Dexter电多极相互作用能量传递公式和Reisfeld近似原理分析, 荧光粉SZ₂P:Sn²⁺, Mn²⁺中Sn²⁺-Mn²⁺离子之间的能量传递机理属于电四极-电四极相互作用引起的共振能量传递, 并计算出Sn²⁺-Mn²⁺离子之间能量传递临界距离R_c ≈ 1.78 nm. 通过改变Sn²⁺, Mn²⁺离子掺杂浓度, 实现了荧光粉发光颜色的调节, 在254 nm短波紫外激发下荧光粉发出较强的蓝白光. 研究结果表明SZ₂P:Sn²⁺, Mn²⁺荧光粉有望应用于紧凑型节能灯照明领域, 随着半导体紫外芯片技术的发展, 有潜力应用于未来的白光发光二极管照明领域.     

The role of excitons and substrate temperature in low-energy (5–50 eV) electron-stimulated dissociation of amorphous D2O ice

We have studied the interaction of low-energy (5–50 eV) electrons with nanoscale (10 ML) ice films by probing the yields and quantum-state distributions of the neutral dissociation products using laser resonance-enhanced multiphoton ionization spectroscopy. In particular, we have observed the electron-stimulated desorption (ESD) of D (²S), O (³P₂) and O (¹D₂) from amorphous D₂O films. These products are observed at threshold energies (relative to the vacuum level) between 6.5–7 eV and desorb with low kinetic energies (60–85 meV) which are independent of the incident electron energy. We associate the ESD of atomic fragments from ice with dissociation of Frenkel-type excitons of 4a₁ character which are near the bottom of the ice conduction band. These excitons are created either directly or via electron-ion recombination. Changing the surface temperature from 88 to 145 K results in an increase in the thermal component of the time-of-flight (kinetic energy) distributions and an overall increase in the neutral fragment yield. We suggest that the change in neutral yield with substrate temperature results from a combination of: (1) increased electron-ion recombination; (2) exciton transport to the near-surface region; and (3) dissociation followed by inelastic scattering and desorption.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.     

N_2-H_2容性耦合等离子体电非对称效应的particle-in-cell/Monte Carlo模拟

H_2-N_2混合气体电容性耦合射频放电在有机低介电系数材料刻蚀中具潜在研究意义.采用paxticle-incell/Monte Carlo模型模拟了双频(13.56 MHz/27.12 MHz)电压源分别接在结构对称的两个电极上的H_2-N_2容性耦合等离子体特征,研究了其电非对称效应.模拟结果表明,通过调节两谐波间的相位角θ,可以改变其电场、等离子体密度、离子流密度的轴向分布及离子轰击电极的能量分布.当相位角θ为0°时,低频电极(晶片)附近主要离子(H_3~+)的密度最小,离子(H_3~+,H_2~+,H~+)轰击低频电极的流密度及平均能量最高;当θ从0°变化90°时,低频电极的自偏压从-103V到106V近似线性增加,轰击电极的离子流密度变化约±18%,H~+离子轰击低频电极的最大能量约减小2.5倍,轰击电极的平均能量约变化2倍,表明氢离子能量和离子流几乎能独立控制.     

Ba9Y2(SiO4)6: Ce3+,Mn2+荧光粉的发光特性及能量传递

利用高温固相法制备了Ba₉Y₂(SiO₄)₆:Ce³⁺,Mn²⁺(BYS:Ce³⁺,Mn²⁺)荧光粉,并通过X射线衍射(XRD)谱、激发和发射光谱及荧光寿命的测试对材料的结构、发光特性和能量传递进行了研究。在327 nm激发下,BYS:Ce³⁺,Mn²⁺发射光谱中包含2个发射峰,分别为位于407 nm的Ce³⁺的蓝紫光发射和位于597 nm的Mn²⁺的红光发射。在该体系中,发现了Ce³⁺向Mn²⁺的有效能量传递,使得Mn²⁺在597 nm处的红光发射显著提高,当x(Mn²⁺)=0.25时,BYS:Ce³⁺,xMn²⁺的能量传递效率可达39%。实验表明,该荧光粉可为紫外基白光LED提供良好的红光光源。