硅基发光材料研究进展

微电子技术是高技术中的关键技术，硅是微电子技术的基础材料，但是硅是一种非发光材料，为了发展光电集成技术，必须大力发展硅基发光材料，多孔硅是一种有希望的硅基发光材料，它表明纳米晶粒中的量子限制效应对光发射是极有效的，随之涌现出一系列量子限制硅基发光材料，为发展光电子集成提供了新的途径。     

硅基低维半导体材料

Ｓｉ／Ｇｅ超晶格外延生长技术的发展和纳米硅（ｎｃ－Ｓｉ：Ｈ）多孔硅（ＰＳ）发光现象的发现，引起了们们对硅基低材料的关注，文章简要综述了近年来在Ｓｉ／Ｇｅ超晶格的电子态和光学性质以及ｎｃ－Ｓｉ：Ｈ，ＰＳ的结构和发光机理等方面的研究进展。     

21世纪的光学和光电子讲座第二讲 硅基发光材料和器件研究

硅基发光材料和器件是实现光电子集成的关键。文章评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺饵硅,多孔硅,纳米硅以及Ｓｉ／ＳｉＯ２等超晶格结构材料,展望了这些不同硅基发光材料作为发光器件和在光电集成中的发展前景。     

基于发光机理提高掺铒硅基材料发光效率的几条途径

掺铒硅基发光材料可以用于制备光通信用光源、光纤放大器，更重要的是可能成为实现硅基光电子集成技术的重要途径，已成为研究的热点之一．文章讨论了掺铒硅及掺铒硅基材料的发光机理，指出了制约实用化方面存在的问题．从不同方面着重探讨了共掺氧对提高掺铒硅发光效率的作用．最后介绍了基于掺铒硅发光机理提高掺铒硅基材料发光效率的几种途径、目前存在的主要问题及研究进展．     

21世纪的光学和光电子学讲座 第二讲 硅基发光材料和器件研究

硅基发光材料和器件是实现光电子集成的关键．文章评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺饵硅,多孔硅,纳米硅以及Ｓｉ／ＳｉＯ２ 等超晶格结构材料．展望了这些不同硅基发光材料作为发光器件和在光电集成中的发展前景     

掺Eu3+硅基材料的发光性质

通过溶胶－凝胶技术制备了掺Eu^3 的硅基材料并测试了其三维荧光光谱、激光谱和发射光谱，结果显示，最佳激发波波长为350nm,最强荧光波长为620nm；在350nm光激发下的发射光谱显示Eu^3 的特征发射光谱，产生4条谱带，分别是577nm(^5D0-^7F0)，588nm(^5D0-^7F1),596nm(^5D0-^7F1)和610nm(^5D0-^7F2)。     

提高Si基材料高效率发光途径的探索

近来人们对发展硅基光电子学作出了很大的努力。众所周知，如同晶体管是微电子学的核心器件一样，发光器件将是光电子学的关键部件。然而由于硅属间接带隙材料，发光效率比直接带隙的ＧａＡｓ等化合物材料低三个多量级，因此如何在硅基材料系实现高效率发光，已成为发展硅基光电子学的重要课题，它吸收着国际上众多科学、工程家们的巨大兴趣。能带工程的应用可能将提供一条有望的途径。本文总结评述了近几年来在ＳｉＧｅ量子阱能带工程，Ｅｒ３＋离子注入发光中心掺杂工程、直接带隙β—ＦｅＳｉ２材料工程以及热电子跃迁发光带内子能级工程中所取得的重要进展。本文同时对其未来的发展提出了若干设想与展望。     

Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μ m complementary metal--oxide--semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V--12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.     

Si基光发射材料的探索

由于Si基光发射材料具有与先进的Si微电子技术兼容和成本低廉的优势，一直是光电子集成（OEIC）工程应用的首选材料。但由于体材料Si是一种间接带隙半导体，不可能成为有效的光发射体。如何通过已有的物理学原理和可行的微加工技术把它改造成为有效的发光材料，甚至成为严格意义上的直接带隙材料，给实验研究工作者和材料设计理论工作者提出了挑战。除多孔Si之外，最近已有若干令人鼓舞的方案，包括Si纳米晶、Si/O超晶格和注硼位错工程等方法，实现了Si基材料的有效发光试验。本文在分析其中最令人关注的进展的基础上，认为要实现高效率、高响应速率的Si基发光材料，以适应超高速、大容量信息处理和传输的要求，较好的途径是直接设计出具有直接带隙的Si基材料。因为避免界面态参与发光过程，对于提高响应速度至关重要。但是如何设计直接带隙的半导体材料并没有现成的规则可依循。我们建议一个经验的对称性法则，并设计出一种新的硅晶超晶格。通过计算机模拟计算表明，其中Se/Si10/Se/Si10/Se超晶格具有相当理想的直接带隙特征，其带隙处于红外波段。预期这类新材料及有关器件会有优越的光发射和各种光学性能，其制作也可方便地与硅微电子工艺兼容。因此，它在信息光电子领域有强大的应用潜力。     

Temperature dependent direct-bandgap light emission and optical gain of Ge

Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.     

An arrayed nanoantenna for broadband light emission and detection

We suggest a broadband optical unidirectional arrayed nanoantenna consisting of equally spaced nanorods of gradually varying length. Each nanorod can be driven by near‐field quantum emitters radiating at different frequencies or, according to the reciprocity principle, by an incident light at the same frequency. Broadband unidirectional emission and reception characteristics of the nanoantenna open up novel opportunities for subwavelength light manipulation and quantum communication, as well as for enhancing the performance of photoactive devices such as photovoltaic detectors, light‐emitting diodes, and solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Tunneling-current-induced light emission from individual carbon nanotubes

Tunneling electrons from a scanning tunneling microscope were used to excite light emission from individual multiwalled carbon nanotubes adsorbed on a highly ordered pyrolytic graphite surface. In the integral photon-intensity map, spatially uniform emission in the visible region was observed along the identical multiwalled carbon nanotubes. The emission spectra for the individual nanotubes showed unique profiles which differed with each nanotube, and were classified into two types. Our results indicate that the light emission is due to not the localized electronic states at the tube ends or defects but radiative transitions of electrons between the one-dimensional van Hove singularities, indicating that the two types of spectra are attributed to metallic and semiconducting nanotubes.     

Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices

Optical and photoluminescence characterizations were performed on nanometric multilayer structures based on amorphous silicon nitrogen alloys. Evidences are shown that the radiative efficiency of multilayers increases with respect to single-layer structures. This is ascribed to a strong electron–hole pair localization and a low heterointerfaces defect density. Time-resolved photoluminescence measurements yield fast recombination with an energy-dependent lifetime due to hopping processes. Finally, the performance of an electroluminescent device based on multilayers is presented.     

Recent Research on One-Dimensional Silicon-Based Semiconductor Nanomaterials: Synthesis,Structures, Properties and Applications

The field of silicon nanowires (SiNWs) and silicon-based 1D nanostructured heterostructures represent one of the most important research subjects within the nanomaterials family. A series of synthesis approaches of SiNWs and silicon-based 1D nanostructured heterostructures have been developed, and have garnered the greatest attention in the past decades for a variety of applications. This article provides an overview on recent research on the synthesis, properties and applications of SiNWs, silicon nanotubes (SiNTs) and complex silicon-based 1D nanostructures.     

Spontaneous emission of light from atoms: the model

We investigate (non‐relativistic) atomic systems interacting with quantum electromagnetic field (QEF). The resulting model describes spontaneous emission of light from a two‐level atom surrounded by various initial states of the QEF. We assume that the quantum field interacts with the atom via the standard, minimal‐coupling Hamiltonian, with the A² term neglected. We also assume that there will appear at most single excitations (photons). By conducting the analysis on a general level we allow for an arbitrary initial state of the QEF (which can be for instance: the vacuum, the ground state in a cavity, or the squeezed state). We derive a Volterra‐type equation which governs the time evolution of the amplitude of the excited state. The two‐point function of the initial state of the QEF, integrated with a combination of atomic wavefunctions, forms the kernel of this equation.     

Enhanced white light emission in Er/Tm/Yb/Li codoped Y2O3 nanocrystals

Er/Tm/Yb codoped Y₂O₃ nanocrystals and Er/Tm/Yb/Li codoped Y₂O₃ nanocrystals have been synthesized by sol-gel method, bright white light emission has been observed at 976 nm excitation. The blue, green, and red emissions, respectively, arise from the transitions ¹G₄ → ³H₆ of Tm³⁺, ²H_11/2/⁴S_3/2 → ⁴I_15/2, and ⁴F_9/2 → ⁴I_15/2 of Er³⁺ ion. Moreover, after doping Li⁺ ions into Er/Tm/Yb codoped Y₂O₃ nanocrystals, the white light emission increase greatly. CIE coordinate of Er/Tm/Yb/Li codoped Y₂O₃ nanocrystals is X = 0.32 and Y = 0.36 at 10 W/cm² excitation, which is very close to the standard equal energy white light illuminate (X = 0.33, Y = 0.33).     

高电荷态Krq+与Al表面碰撞发射可见光的研究

利用低速(V≈0.01 V_Bohr)高电荷态Kr^q+ (q=8, 10, 13, 15, 17)离子轰击金属Al表面, 获得了碰撞过程产生的300–600 nm的光谱. 实验结果表明: 低能大流强(μA/cm²量级)离子束入射金属表面, 可产生溅射原子、离子和入射离子中性化后发射的可见光. 随着入射离子势能(电荷态)增加, 碰撞过程中发射谱线的强度增强. 与激发态3d能级相比, 较高的势能可以有效地激发Al原子的电子到较高4s能级. 关键词： 高电荷态离子 可见光发射 离子与表面作用