TiO_2缺陷结构电子性质的第一性原理计算

本文采用第一性原理研究了O空位缺陷、Ti空位缺陷TiO_2的能带结构、总态密度、吸收谱.通过研究发现:与TiO_2超胞结构的能带相比,O空位缺陷体系的价带与导带能量均向低能区域移动,费米能级与导带底交错,呈现出n型半导体,Ti空位缺陷的TiO_2的费米能级与价带顶部的能级交错,为p型半导体材料.对于O空位缺陷TiO_2总态密度与分波态密度在低能区的态密度则主要由O的3s、3p轨道贡献的能量,而在费米能附近的态密度则主要由Ti的4d轨道贡献能量;Ti空位缺陷的态密度总态密度仍然由O的3s、3p和Ti的4d轨道贡献的能量;同时分析吸收光谱发现峰值下移较多的是钛缺陷体系,其原因在于Ti缺陷结构中未成键电子的相互作用.     

冲击加载下环三亚甲基三硝胺的初始动态响应及反应机理

当前,对暴露于极端环境中的含能材料的相对安全性的关注日益增加.理解含能材料在冲击加载下的初始分解机理是探索新型高能顿感材料的基础.本文利用多尺度冲击技术(multi-scale shock technique,MSST)结合反应力场(ReaxFF)分子动力学的方法研究冲击加载下环三亚甲基三硝胺(RDX)的完美晶体和分子空位晶体的初始动态响应及反应机理,计算了可能参与反应的原子间径向分布函数,分析了不同冲击速度及分子空位缺陷对冲击加载过程的影响.结果表明:在冲击加载下,完美RDX晶体和空位RDX晶体的初始分解方式均为首先发生N—NO_2键断裂,随后是C-N键的断裂.此外,还可能会出现C-H键断裂,并有氢转移到硝基中的氧原子上形成HONO.随着冲击速度的增加,两种RDX晶体的化学键断裂数目增多,反应更强烈.分子空位缺陷的存在增强了 N—NO_2的反应活性,使其更易发生断裂,进而加速空位RDX晶体的初始反应.     

外电场对对硝基氯苯分子结构与电子光谱影响的研究

为达到降解有机污染物硝基氯苯的目的, 采用外加平行电场的方法, 研究电场对硝基氯苯化合物的分子结构和电子光谱等的影响. 以对硝基氯苯分子为研究对象, 采用密度泛函B3LYP方法在6-311+g(d, p) 基组水平上优化并计算了不同外电场作用下pCNB的基态分子结构、电偶极矩和分子总能量, 在此基础上采用含时密度泛函研究了该分子的前六个激发态的波长、振子强度受外电场的影响规律.结果表明: C–Cl, C–N键长随电场增加而快速增大, 即键能快速减小, 同时苯环上的C–C, C–H键长的变化很小, 且有增有减, 说明分子的降解可能是C–Cl, C–N键断裂而苯环则相对稳定. 同时分子总能量随电场先增大后变小, 电偶极矩刚好相反.另外, 最大吸收波长λ_max 随电场先缓慢减小, 后快速增大, 导致电子跃迁相对容易, 而振子强度随电场变化则相对比较复杂. 关键词： 对硝基氯苯 外电场 密度泛函 含时密度泛函     

NO在Yn(n=1–12)团簇表面的解离性吸附

采用基于密度泛函理论中的广义梯度近似,在考虑自旋多重度的情况下,对Y_nNO（n=1–12）团簇进行了构型优化,以及稳定性和成键特性分析,结果表明：n=5,7,8,10时,NO吸附使相应的Y_n团簇基态结构发生了明显变化,吸附后,所有尺寸中的N–O键长明显伸长,振动频率减弱,表明NO在Y_n团簇表面发生的是解离性吸附,N–Y,O–Y键的共同作用使Y_nNO团簇具有很大的吸附能;特别是n=3,5,8时,N–O键断裂,吸附能值分别为9.92,9.24,9.82 eV. Y_nNO和Y_n 的二阶能量差分变化趋势表明,NO 吸附对Y_n团簇稳定性和成键特性均产生较大影响. N,O原子sp³轨道杂化时孤对电子的出现导致N–O键断裂,增强了N–Y和O–Y间的成键能力,使Y₃NO,Y₅NO,Y₈NO团簇表现出了很好的稳定性. 关键词： 团簇 NO吸附 基态结构 稳定性     

电荷俘获存储器数据保持特性第一性原理研究

本文研究HfO₂掺入Al替位Hf杂质和氧空位共同掺杂对电荷俘获型存储器存储特性的影响. HfO₂作为高介电常数材料由于具有缩小器件尺寸、提高器件性能等优势, 被广泛用于CTM的俘获层. 采用MS和VASP研究了HfO₂俘获层中掺入Al对氧空位形成能的影响. 同时计算了两种缺陷在不同距离下的相互作用能. 计算结果表明在HfO₂中掺入Al使得氧空位的形成能降低, 并且三配位氧空位的形成能比四配位氧空位的形成能降低的更多. 通过研究Al和三配位氧空位两种缺陷间不同距离的三种情况, 计算结果表明当缺陷间距为2.107 Å时, 体系的电荷俘获能最大; 量子态数最多; 布居数最小、Al–O键最长. 通过研究三种体系写入空穴后键长的变化, 得出当缺陷间距为2.107 Å时, 写入空穴后体系的Al–O键长变化最小. 以上研究结果表明, 掺入Al后可以有效提高电荷俘获型存储器的数据保持能力. 因而本文的研究为改善电荷俘获型存储器数据保持特性提供一定的理论指导.     

空位缺陷对β-AgVO_3电子结构和光吸收性能的影响

基于密度泛函的第一性原理研究了Ag空位、O空位和Ag-O双空位对β-AgVO_3的电子结构及光学性质的影响.采用广义梯度近似平面波超软赝势GGA+U方法,对不同缺陷体系的形成能、能带结构、电子态密度、差分电荷密度和吸收光谱进行了计算和分析.通过比较不同Ag空位和O空位的形成能,确定了β-AgVO_3中主要形成Ag3空位和O1空位,并且Ag空位较O空位更容易形成.Ag3空位和O1空位的存在都使得β-AgVO_3带隙有一定程度的减小;Ag3空位使β-AgVO_3呈现p-型半导体性质,而O1空位和Ag3-O1双空位使β-AgVO_3呈现n-型半导体性质.Ag3和O1空位对晶体在可见光范围内的光吸收影响较小.     

密度泛函理论研究氧空位对HfO2晶格结构和电学特性影响?

HfO2因高k值、热稳定性良好和相对Si导带偏移良好等特点,作为电荷俘获型存储器栅介质材料得到了广泛研究。为了明确高k俘获层提高CTM电荷俘获效率的原因,运用基于密度泛函理论的第一性原理计算,研究了氧空位引起HfO2的晶格变化及其影响计算结果显示优化后氧空位最近邻氧原子间距明显减小,次近邻O与Hf间距变化稍小。优化后氧空位明显改变局部晶格,而对较远晶格影响逐渐减弱,即引起了局部晶格变化深能级和导带电子态密度主要是Hf原子贡献,而价带则是O原子贡献。优化后各元素局部电子态密度和总电子态密度都明显大于未优化体系,局部电子态密度之和比总电子态密度小。优化后俘获电荷主要在氧空位周围和相邻氧原子上,而未优化时电荷遍布整个体系。优化后缺陷体系电荷局域能增大,电荷量增加时未优化体系电荷局域能明显减小,即晶格变化无饱和特性对电荷局域影响大。说明晶格变化对电荷的俘获能力较强,有利于改善存储器特性。     

硅量子点的形状及其弯曲表面效应

硅量子点的弯曲表面引起系统的对称性破缺, 致使某些表面键合在能带的带隙中形成局域电子态.计算结果表明:硅量子点的表面曲率不同形成的表面键合结合能和电子态分布明显不同. 例如, Si–O–Si桥键在曲率较大的表面键合能够在带隙中形成局域能级, 而在硅量子点曲率较小的近平台表面上键合不会形成任何局域态, 但此时的键合结合能较低. 用弯曲表面效应(CS)可以解释较小硅量子点的光致荧光光谱的红移现象. CS效应揭示了纳米物理中又一奇妙的特性. 实验证实, CS效应在带隙中形成的局域能级可以激活硅量子点发光. 关键词： 硅量子点 弯曲表面效应 表面键合 局域能级     

空位缺陷对CdS电子结构和光学性质的影响

采用基于密度泛函理论(DFT)第一性原理的平面波超软赝势方法,对空位缺陷体系的几何结构进行优化计算,发现空位引起周围原子的弛豫,晶格结构发生畸变。在此基础上研究了空位缺陷对闪锌矿结构CdS体系电子结构(能带结构、电子态密度)的影响,结果表明,S空位使得能带变窄,而Cd空位使带隙变宽,但二者仍为直接带隙半导体。对光学性质的研究发现,由于空位的介入使其邻近原子电子结构发生变化,使得空位缺陷体系光学性质的变化主要集中在低能量区。     

空位缺陷及Mg替位对纤锌矿(Ga,Mn)N电子结构和磁光性能的影响

采用自旋密度泛函理论框架下的广义梯度近似(GGA+U)平面波超软赝势方法,构建了未掺杂纤锌矿GaN超胞、三种不同有序占位Mn双掺GaN,(Mn,Mg)共掺杂GaN以及存在空位缺陷的Mn掺杂GaN超胞模型,分别对所有模型的能带结构、电子态密度、能量以及光学性质进行了计算.计算结果表明:与纯的GaN相比,Mn掺杂GaN体系的体积略有增大,掺杂体系居里温度能够达到室温以上;随着双掺杂Mn-Mn间距的增大,体系总能量和形成能升高、稳定性下降、掺杂越难;(Mn,Mg)共掺杂并不能有效增大掺杂体系磁矩,也不能达到提高掺杂体系居里温度的作用;Ga空位缺陷和N空位缺陷的存在不利于Mn掺杂GaN形成稳定的铁磁有序.此外,Mn离子的掺入在费米能级附近引入自旋极化杂质带,正是由于费米能级附近自旋极化杂质带中不同电子态间的跃迁,介电函数虚部在0.6868eV附近、光吸收谱在1.25eV附近分别出现了一个较强的新峰.     

空位浓度对纤锌矿BN电子结构和光学性质影响的第一性原理研究

本文采用了第一性原理研究了空位缺陷纤锌矿BN的电子结构和光学性质.通过对能带结构、态密度分析发现：缺陷体系由于B、N的缺失,费米能级附近出现杂质能级.相较于本征体系,随着空位浓度增加,杂质能级变多,跃迁能量减小. N空位缺陷的纤锌矿BN态密度总体向低能区移动,且能级相较于B空位缺陷的纤锌矿BN明显增多.从复介电函数和光学吸收谱分析中发现,随着空位浓度的增加,缺陷体系纤锌矿BN在可见光区域的吸收逐渐增强.尤其是B₂₂N₂₄在可见光区域出现的吸收效果更好.     

Electronic Structure and Optical Property Calculation of an Oxygen Vacancy in NH_4H_2PO_4 Crystals

The electronic structure of perfect ammonium dihydrogen phosphate(ADP) and defective ADP with an oxygen(O) vacancy are calculated by screened-exchange hybrid density functional HSE06. The optimized structural parameters of the defective ADP crystal are analyzed. The PO_4 tetrahedron with an O vacancy is distorted and its symmetry is broken. The band gap of the defective ADP with an O vacancy is about 1.5 eV lower than the perfect ADP, which is due to the new O vacancy defect states near the valence band maximum. Moreover, more peaks appear in the low-energy region(lower than 6 eV) in the curves of the linear optical properties for the defective ADP. The results indicate that the O vacancy will significantly influence the laser damage performance of ADP crystals.     

Orbital selection of the double [CuO2] layer compound Ca3Cu2O4Cl2

We present a first-principles investigation on the dynamics and mechanism of the oxidation reaction between water molecules and the reduced PuO_2(110) surface using ab initio molecular dynamics(AIMD) simulations in combination with density functional theory(DFT) + U calculations. We find a dominating dissociation preference of water molecules for the vacancy defect sites on the PuO_2(110) surface, irrespective of the water or vacancy coverage. Due to hybridizations between the frontier orbitals of water molecule and the electronic states of the vacancy vicinity, partial water dissociation at the vacancy sites is exothermic and barrierless. The dissociation product, an OH group, further hydrogenates the PuO_2(110) surface by occupying the vacancy site.We also observe surface vacancy diffusion induced by the interactions between the water molecules and the surface oxygen atom in the proximity of the defect sites.     

Vacancy induced changes in the electronic structure of titanium carbide—I. Band structure and density of states

Results of a self-consistent “Augmented Plane Wave” (APW) band-structure calculation are presented for substoichiometric titanium carbide with 25% vacancies on the carbon sublattice sites (TiC_{0 75}) assuming a model structure with ordered vacancies Comparison with an earlier APW study on stoichiometric TiC reveals that the carbon vacancies induce two pronounced peaks in the density of states (DOS), 0.4 eV below and 0.8 eV above the Fermi energy E_γ, thus forming electronic states in a region where the DOS for stoichiometric TiC exhibits a minimum So-called “vacancy states” with an important amount of charge on the vacancy site are found to be derived from Ti 3d states extending into the vacancy muffin tin sphere An angular momentum decomposition with respect to the center of the vacancy muffin tin sphere shows that the s character predominates for the occupied and the p character for the unoccupied “vacancy states” The theoretical findings explain features near E_γ, observed in recently published X-ray emission spectra Furthermore, we find a slight increase of electronic charge in the carbon muffin tin spheres as compared with stoichiometnc TiC.     

Electronic energy structure of vacancy and divacancy in SiO2

We investigated electronic energy structure of vacancy and divacancy in SiO₂, and found that oxygen vacancy and divacancy give rise to bound-states near the edge of the conduction band, whereas localized states related to the silicon vacancy occur in the valence band. Our results demonstrate that the doubly occupied oxygen vacancy state yields electrons to silicon in Si-SiO₂ junction and serves as a fixed oxide charge.     

Hydrogen adsorption and storage of Ca-decorated graphene with topological defects: A first-principles study

As a candidate for hydrogen storage medium, geometric stability and hydrogen capacity of Ca-decorated graphene with topological defects are investigated using the first-principle based on density functional theory (DFT), specifically for the experimentally realizable single carbon vacancy (SV), 585 double carbon vacancy (585 DCV) and 555–777 double carbon vacancy (555–777 DCV) defects. It is found that Ca atom can be stabilized on above defective graphenes since Ca׳s binding energy on vacancy defect is much larger than its cohesive energy. Up to six H₂ molecules can stably bind to a Ca atom on defective graphene with the average adsorption energies of 0.17–0.39 eV/H₂. The hybridization of the Ca-3d orbitals with H₂-σorbitals and the electrostatic interaction between the Ca cation and the induced H₂ dipole both contribute to the H₂ molecules binding. Double-side Ca-decorated graphene with 585 DCV and 555–777 DCV defects can theoretically reach a gravimetric capacity of 5.2 wt% hydrogen, indicating that Ca-decorated defective graphene can be used as a promising material for high density hydrogen storage.     

Electronic Structures of Wurtzite GaN with Ga and N Vacancies

The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth.     

Effects of partial hydrogenation and vacancy defects on the electronic properties of metallic carbon nanotubes

Using first-principles calculations based on spin-polarized density functional theory, we investigate the electronic properties of metallic carbon nanotubes (MCNTs) with partial hydrogenation or vacancy defects. The calculated results show that the energy band structures of MCNTs strongly depend on the adsorption site or the vacancy-defect site. Interestingly, our results show the nonmagnetic semiconducting behavior of MCNTs in the case of balanced H adsorption or vacancy defects. However, the MCNTs exhibit magnetic metallic behavior in the case of imbalanced H adsorption or vacancy defects, and the energy band structure of MCNTs shows the appearance of a spin-polarized flat band near the Fermi level. This effect presents a possibility for spintronic device and semiconducting molecular wire applications.     

黑索金电子结构和光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理方法对黑索金晶体的电子结构和光学性质进行了计算. 结果表明: 黑索金是能隙值为3.43 eV的绝缘体, 价带主要由C, N和O的2s与2p态构成, 而导带主要由N-2p和O-2p态构成; 静态介电函数ε₁(0)=1.38, 介电常数的虚部有5个峰值, 其中最大峰值在光子能量4.59 eV处, 并对造成这些峰值的可能的电子跃迁做了详细分析. 利用能带结构和态密度分析了黑索金的光反射系数、吸收系数及能量损失函数等光学性质, 发现黑索金是对光吸收、反射及能量损失不敏感的材料. 关键词： 黑索金 第一性原理 电子结构 光学性质     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.