稀磁半导体Zn0.7Mn0.15Co0.15O 中的铁磁行为

用固相反应法在不同温度下制备了名义组分为Zn0.7Mn0.15Co0.15O的Mn、Co共掺杂ZnO块状样品,并研究了烧结温度(Ts)对其结构和磁性质的影响。结构研究表明:掺杂样品除ZnO纤锌矿结构外还存在第二相,且第二相与Ts有关。磁测量表明,所有样品低温(约低于50K)下呈现铁磁行为,但其行为在Ts≤700℃和Ts>700℃时表现出明显的不同。对低温烧结的样品,磁有序程度随Ts增加而增强,而对较高温度烧结的样品,磁有序程度随Ts增加而减弱。结合结构分析,文中就这些观察的可能起因进行了讨论。     

半磁半导体的磁性质

半磁半导体是一类新型的半导体。本文主要阐述半磁半导体中磁的基本性质和描述方法，讨论了顺磁态的半磁半导体和反铁磁相互作用集团的形成，并介绍了顺磁-自旋玻璃的相变。     

单晶和孪晶的Zn0.96Co0.04O稀磁半导体薄膜的制备与研究

采用分子束外延技术分别在不同晶面的蓝宝石（sapphire Al₂O₃）基片上制备了沿c轴生长的Zn_0.96Co_0.04O稀磁半导体薄膜.发现在Al₂O₃（1120）晶面（a面）上薄膜是二维层状外延生长的高质量单晶薄膜,而在Al₂O₃（0001）晶面（c面）上薄膜却具有有趣的孪晶结构,部分区域相互之间有一个30°的面内转动来减少和基片之间的失配度.在孪晶薄膜中存在的这些相互旋转形成的区域界面上会引起载流子强烈的散射作用,导致载流子迁移率的下降和平均自由程的缩短.利用X射线吸收精细结构技术证明了无论单晶还是孪晶的Zn_0.96Co_0.04O薄膜中所有的Co都以+2价替代进入了ZnO的晶格,而没有形成任何杂相.而对其磁性研究发现,孪晶的薄膜样品比高质量的单晶薄膜样品具有大得多的饱和磁矩.这充分说明孪晶薄膜中的铁磁性来源与缺陷有关.我们还对铁磁性耦合机制进行了探讨. 关键词： Co掺杂ZnO 稀磁半导体 X射线吸收精细结构 单晶和孪晶薄膜     

稀磁半导体的制备与性质

报道了稀磁半导体的制备、性质与实验研究进展，介绍了稀磁半导体的应用及发展前景．     

高质量稀磁半导体(Ga,Mn)Sb单晶薄膜分子束外延生长

理论预言窄禁带稀磁半导体(Ga,Mn)Sb及其异质结构可能存在量子反常霍尔效应等新奇特性, 近年来受到了特别关注. 但是, 由于(Ga,Mn)Sb薄膜生长窗口窄, 纯相(Ga,Mn)Sb薄膜制备比较困难, 迄今关于这类材料的研究报道为数不多. 本文采用低温分子束外延的方法, 通过优化生长条件, 成功制备出厚度为10 nm, Mn含量在0.016至0.039之间的多组(Ga,Mn)Sb薄膜样品. 生长过程中反射式高能电子衍射原位监测和磁性测量都表明没有MnSb等杂相的偏析, 同时原子力显微镜图像表明其表面形貌平滑, 粗糙度小. 通过生长后退火处理, (Ga,Mn)Sb薄膜的最高居里温度达到30 K. 此外, 本文研究了霍尔电阻和薄膜电阻随磁场的变化关系, 在低温下观测到明显的反常霍尔效应.     

一种具有“1111”型结构的新型稀磁半导体(La1–xSrx)(Zn1–xMnx)SbO

利用高温固相反应法,成功合成了一种新型块状稀磁半导体(La_1–xSr_x)(Zn_1–xMn_x)Sb O(x=0.025, 0.05,0.075, 0.1).通过(La³⁺, Sr²⁺)、(Zn²⁺, Mn²⁺)替换,在半导体材料La Zn Sb O中分别引入了载流子与局域磁矩.在各掺杂浓度的样品中均可观察到铁磁有序相转变,当掺杂浓度x=0.1时,其居里温度Tc达到了27.1 K,2 K下测量获得的等温磁化曲线表明其矫顽力为5000 Oe.(La_1–xSr_x)(Zn_1–xMn_x)Sb O与"1111"型铁基超导体母体LaFeAsO、"1111"型反铁磁体LaMnAsO具有相同的晶体结构,且晶格参数差异很小,为制备多功能异质结器件提供了可能的材料选择.     

稀磁半导体Cd_（1－x）Fe_xTe的磁光光谱

在７０－３００Ｋ温度范围内测量了组分ｘ为０．０１和０．０４的Ｃｄ１－ｘＦｅｘＴｅ及ＣｄＴｅ的法拉第效应随入射光子能量的变化，首次获得了Ｃｄ１－ｘＦｅｘＴｅ在布里渊区Γ点和Ｌ点的有效ｇ因子及其与温度的关系。给出了Ｆｅ２＋离子与载流子间的ｓｐ－ｄ交换作用常数Ｎ０（β－α）＝（－１．５７±０．０３）ｅＶ。     

稀磁半导体的研究进展

本文主要介绍了III-V族稀磁半导体(Ga,Mn)As的研究进展,包括(Ga,Mn)As的生长制备、基本磁性质、磁输运特征、磁光性质、磁性起源、相关的异质结构和自旋注入等,同时还简单介绍了其它稀磁半导体如IV族、III-VI族和IV-VI族等稀磁半导体的研究进展,在文章的最后描述了理想的稀磁半导体应该具备的特征以及对未来的展望。     

稀磁半导体的研究进展

本文主要介绍了III-V族稀磁半导体(Ga,Mn)As的研究进展,包括(Ga,Mn)As的生长制备、基本磁性质、磁输运特征、磁光性质、磁性起源、相关的异质结构和自旋注入等,同时还简单介绍了其它稀磁半导体如IV族、III-VI族和IV-VI族等稀磁半导体的研究进展,在文章的最后描述了理想的稀磁半导体应该具备的特征以及对未来的展望。     

稀磁半导体Zn_（1－x）Co_xSe的光谱特性

本文首次报道一类新型半导体材料：含Ｃｏ＋＋离子的稀磁半导体Ｚｎ１－ｘＣｏｘＳｅ晶体的光谱特性研究实验结果。对组分Ｘ＝０．００１，０．００９７，０．０３０，０．０３７系列样品，在７３Ｋ—３００Ｋ范围内分别在可见和近红外区测量了吸收光谱和光致发光谱。实验观测到一系列与Ｘ值无关的吸收峰和光致发光峰，两者—一对应，它们分别对应于具有几对称的晶体场中Ｃｏ＋＋离子不同能级间的跃迁，对这些峰进行了初步指认。从光致发光谱实验结果给出能隙随Ｘ值的变化。     

ZnCoO稀磁半导体的室温磁性

采用固相反应法，将ZnO和Co₂O₃粉末按不同的成分配比混合，制备了稀磁半导体Zn_1-xCo_xO (x=0.02,0.06,0.10)材料.并使用H₂气氛退火技术对样品进行了处理，得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度. 关键词： 稀磁半导体 氧化锌 掺杂 固相反应法     

Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor

Narrow-gap higher mobility semiconducting alloys In_1-xMn_xSb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_0.98Mn_0.02Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2 K) within a cluster.     

The electric and magnetic properties of epitaxially grown A0.5-xLaxSr0.5MnO3 （A=Pr, Nd） thin film

The epitaxial （single crystal-like） Pr0.4La0.1Sr0.5MnO3 （PLSMO） and Nd0.35La0.15Sr0.5MnO3 （NLSMO） thin films are prepared and characterized, and the electric and magnetic properties are examined. We find that both PLSMO and NLSMO have their own optimum deposition temperature （To） in their growing into epitaxial thin films. When the deposition temperature is higher than To, a c-axis oriented but polycrystalline thin film grows; when the deposition temperature is lower than To, the thin film tends to be a-axis oriented and also polycrystalline. The most important point is that for the epitaxial PLSMO and NLSMO thin films the electronic phase transitions are closely consistent with the magnetic phase transitions, i.e. an antiferromagnetic phase corresponds to an insulating state, a ferromagnetic phase corresponds to a metallic state and a paramagnetic phase corresponds to a semiconducting state, while for the polycrystalline thin films the electronic phase transitions are always not consistent with the magnetic transitions.     

Growth temperature dependent evolutions of microstructural, optical and magnetic properties of Zn0.75Co0.25O films

Zn0.75Co0.25O films are fabricated via reactive electron beam evaporation. The influence of growth temperature on the microstructural, optical and magnetic properties of Zn0.75Co0.25O films is investigated by using x-ray diffraction, selected area electron diffraction, field emission scanning electron microscope, high resolution transmitting electron microscope, photoluminescence （PL）, field dependent and temperature dependent DC magnetization, and x-ray photoelectron spectroscopy （XPS）. It is shown that Zn0.75Co0.25O films grown at low temperatures （250-350℃） are of single-phase wurtzite structure. Films synthesized at 300 or 350℃ reveal room temperature （RT） ferromagnetism （FM）, while su for 250℃ fabricated films is found above 56 K. PL and XPS investigations show favour towards the perspective that the O-vacancy induced spin-split impurity band mechanism is responsible for the formation of RT FM of Zn0.75Co0.25O film, while the superparamagnetism of 250℃ fabricated film is attributed to the small size effect of nanoparticles in Zn0.75Co0.25O film.     

Electron and magnetic transport in the diluted magnetic semiconductor CdGeAs2<Mn>at high pressures

In CdGeAs₂<Mn>, a metamagnetic phase transition and a negative magnetic resistance induced by high pressure were found and studied.     

Spin-polarized structural, electronic and magnetic properties of diluted magnetic semiconductors Cd1−xMnxTe in zinc blende phase

We have investigated the structural, electronic and magnetic properties of the diluted magnetic semiconductor (DMS) Cd_1−xMn_xTe (for x=0.75 and 1.0) in the zinc blende (B3) phase by employing the ab-initio method. Calculations were performed by using the full potential linearized augmented plane wave plus local orbitals (FP-L/APW+lo) method within the frame work of spin-polarized density functional theory (SP-DFT). The electronic exchange-correlation energy is described by generalized gradient approximation (GGA). We have calculated the lattice parameters, bulk modulii and the first pressure derivatives of the bulk modulii, spin-polarized band structures, and total and local densities of states. We estimated the spin-exchange splitting energies Δ_x(d) and Δ_x(pd) produced by the Mn3d states, and we found that the effective potential for the minority spin is more attractive than that of the majority spin. We determine the s-d exchange constant N₀α (conduction band) and p-d exchange constant N₀β (valence band) and these somewhat agree with a typical magneto-optical experiment. The value of calculated magnetic moment per Mn impurity atom is found to be 4.08 μ_B for Cd_0.25Mn_0.75Te and 4.09 μ_B for Cd_0.0Mn_1.0Te. Moreover, we found that p-d hybridization reduces the local magnetic moment of Mn from its free space charge value of 5.0 μ_B and produces small local magnetic moments on the nonmagnetic Cd and Te sites.     

钙钛矿锰氧化物La_(2/3)Sr_(1/3)Fe_xMn_(1-x)O_3的结构与磁性研究

本文利用溶胶-凝胶法制备了名义成分为La_(2/3)Sr_(1/3)Fe_xMn_(1-x)O_3(x=0.0,0.1,0.2,0.3,0.5)的系列样品,样品先后经过773,873,1073 K热处理,热处理时采用缓慢升温方式,X射线衍射分析表明,该系列样品均为单相钙钛矿结构,空间群为R3c,利用X'Pert HighScore Plus软件计算了样品的晶粒尺寸、晶格常数、晶胞体积及键长、键角,利用物理性能测量系统测量了样品的磁性,发现样品在10K的磁矩随掺杂量的增加而减小,但存在两个明显不同的变化区域:从x=0到x=0.2时,平均每个分子的磁矩从2.72μB迅速下降到0.33μB,居里温度从327 K下降到95 K,下降了232 K;而从x=0.2到x=0.5时,平均每个分子的磁矩从0.33μB缓慢下降到0.05μB,居里温度从95K下降到46K,只下降了49K,我们认为Fe与Mn离子磁矩反平行是样品磁矩随Fe掺杂量增加而下降的原因之一。     

First principles study on the structural, electronic and optical properties of diluted magnetic semiconductors Zn1-xCoxX （X=S, Se, Te）

The electronic and optical properties of zincblende ZnX（X=S, Se, Te） and ZnX：Co are studied from density functional theory （DFT） based first principles calculations. The local crystal structure changes around the Co atoms in the lattice are studied after Co atoms are doped. It is shown that the Co-doped materials have smaller lattice constant （about 0.6%-0.9%）. This is mainly due to the shortened Co-X bond length. The （partial） density of states （DOS） is calculated and differences between the pure and doped materials are studied. Results show that for the Co-doped materials, the valence bands are moving upward due to the existence of Co 3d electron states while the conductance bands are moving downward due to the reduced lattice constants. This results in the narrowed band gap of the doped materials. The complex dielectric indices and the absorption coefficients are calculated to examine the influences of the Co atoms on the optical properties. Results show that for the Co-doped materials, the absorption peaks in the high wavelength region are not as sharp and distinct as the undoped materials, and the absorption ranges are extended to even higher wavelength region.     

铁磁/半导体(绝缘体)/铁磁异质结中渡越时间与两铁磁层磁矩夹角变化的关系

在群速度概念的基础上, 研究了自旋极化电子隧穿通过铁磁体/半导体(绝缘体)/铁磁体异质结时, 渡越时间随两端铁磁层中磁矩夹角变化的关系. 研究结果表明: 当中间层为半导体层时, 由于半导体层中的Rashba自旋轨道耦合强度的影响, 自旋向上电子和自旋向下电子的渡越时间差会在两铁磁层相对磁矩夹角为π/2和3π/2附近出现一个极小值. 当中间层为绝缘体层时, 势垒高度的变化会导致不同取向的自旋极化电子渡越时间差的变化, 并当势垒高度超过一临界值时发生翻转. 关键词： 铁磁体/半导体(绝缘体)/铁磁体异质结 Rashba自旋轨道耦合强度 渡越时间 磁矩     

Effect of sputtering process on magnetic properties and crystal structure of Sm2Fe17Nx thin films

Hard magnetic Sm₂Fe₁₇N_x thin films were prepared by dc magnetron sputtering and subsequent nitrogenation process. The results show that the sputtering parameters determine the film composition, which determines the crystal structure and magnetic properties. When the gas pressure varies from 1.2 to 2.1 Pa and power varies from 40 to 60 W, higher Sm content (>11.3 at%) is obtained, giving rise to improved coercivity H_C and remanence ratio M_R/M_S. The optimal H_C of 2127.8 Oe and M_R/M_S of 0.53 are obtained when the gas pressure and power reach 1.2 Pa and 50 W, respectively. In addition, it is found that the pure single Sm₂Fe₁₇ phase can be observed when the ratio of Fe/Sm exceeds 7.1 by controlling the sputtering parameters to adjust the composition.