四苯基卟啉类化合物电子光谱和三阶非线性光学性质的理论研究

在B3LYP/6-31+G~*水平计算四个5,10,15,20-四苯基卟啉类化合物的电子光谱和三阶非线性光学性质.结果表明,电子的最大吸收波长在580nm左右,属于可见光区,源于卟啉内HOMO到LUMO的π→π*的电子跃迁.供电子基团的引入将增加电子云密度,致使三阶非线性光学性质增大.吸电子基的引入使卟啉环上的电子云密度减小,导致三阶非线性光学性质减小.含双键或三键的吸电子基团使电子云密度增大,致使三阶非线性光学性质增大.     

Na_2Ge_2Se_5电子结构和光学性质的第一性原理研究

Na_2Ge_2Se_5是一种优异的红外非线性晶体材料.采用基于第一性原理的密度泛函理论赝势平面波方法对Na_2Ge_2Se_5进行结构优化,并以此为基础计算研究了Na_2Ge_2Se_5的电子结构和光学性质.结果表明:Na2Ge2Se5是宽禁带间接带隙半导体,价带至导带的电子跃迁主要来自于Ge和Se的48,4p态;Na对光学性质的贡献较小,Ge和Se之间的相互耦合作用决定了Na_2Ge_2Se_5的光学性质;该晶体在紫外区有强烈的反射和吸收,静态折射率为2.133,双折射率值适中,为0.145.理论计算结果表明,Na_2Ge_2Se_5是一种性能优良的红外非线性光学晶体材料.     

无缺陷PbWO4晶体光学性质的模拟计算

利用完全势缀加平面波局域密度泛函近似研究PbWO4（PWO）晶体的光学性质.计算了完整的PWO晶体的电子结构、复数折射率、介电函数、光电导谱和吸收光谱.介电函数的虚部、吸收光谱、折射率等的峰值位置存在一一对应关系,这与电子从价带到导带的跃迁吸收有关.完整的PWO晶体在可见光范围内没有吸收,所以完整的PWO晶体是无色透明的晶体.     

掺锰铌酸锂晶体第一性原理研究

利用第一性原理研究了Mn:LiNbO3晶体的电子结构和光学性质。结果表明,Mn掺杂产生了杂质能级,主要由Mn的d态轨道贡献。杂质能级与导带之间的带隙小于理想LiNbO3晶体导带与价带之间宽度,降低了电子跃迁所需能量。同时,掺杂也降低了各原子的电子轨道能量。晶体中最高占据轨道不再是O的2p轨道,而是Mn的d 轨道。掺杂离子在晶体中同时充当电子的施主与受主。静态介电常数在掺杂后有明显的增大。Mn的掺杂使晶体在可见光区域的光学性质产生变化,并使晶体的吸收谱在可见光区域产生吸收峰。     

掺铁铌酸锂晶体第一性原理研究

利用第一性原理研究了Mn:LiNbO3晶体的电子结构和光学性质。结果表明,Mn掺杂产生了杂质能级,主要由Mn的d态轨道贡献。杂质能级与导带之间的带隙小于理想LiNbO3晶体导带与价带之间宽度,降低了电子跃迁所需能量。同时,掺杂也降低了各原子的电子轨道能量。晶体中最高占据轨道不再是O的2p轨道,而是Mn的d 轨道。掺杂离子在晶体中同时充当电子的施主与受主。静态介电常数在掺杂后有明显的增大。Mn的掺杂使晶体在可见光区域的光学性质产生变化,并使晶体的吸收谱在可见光区域产生吸收峰。     

硫化锡电子结构和光学性质的量子尺寸效应

基于密度泛函理论的第一性原理计算,系统研究了硫化锡(SnS)晶体、纳米单层及多层的结构稳定性、电子结构和光学性质.结果表明:由于相对弱的层间范德瓦尔斯力作用,SnS单层纳米片可以像石墨烯等二维材料一样从块体中剥离出来;受制于量子尺寸效应和层间相互作用的影响,SnS的结构稳定性随层数减少而逐渐减弱,其带隙随层数减少而逐渐增大;由于材料的本征激发和吸收取决于电子结构,因此改变SnS材料的层数可以到达调控其光学性质的目的;SnS块体和纳米结构的主要光学吸收峰起源于Sn-5s,5p和S-2p轨道之间的电子跃迁;并且从块体到单层纳米结构,SnS的光学吸收峰出现明显的蓝移.本文的研究将有助于SnS材料在太阳能电池领域的应用.     

含亚胺和胆甾烯基液晶分子的电子光谱和二阶非线性光学性质

在B3LYP/6-31G水平上研究了含亚胺和胆甾烯基不对称液晶二聚体的几何结构、电子吸收光谱和二阶非线性光学性质。研究结果表明,该类化合物分子的最强电子跃迁主要源于分子HOMO→LUMO的π→π*跃迁,对应的最大吸收波长位于337~349 nm范围,属于近紫外区。减小分子的中心柔性间隔基的长度和提高端接基的吸电子能力可以增强该类液晶的二阶非光学性质。     

第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

掺铁铌酸锂晶体第一性原理研究

利用第一性原理计算方法研究铁掺杂铌酸锂晶体的电子结构和光学性质，所有计算采用广义梯度近似下的平面波超软赝势方法，得到如下结论：掺杂产生的杂质能级，主要由铁的d轨道贡献。掺杂降低了电子跃迁所需能量，同时也降低了各原子的电子轨道能量。掺杂离子在晶体中既是电子的施主又是受主。铁的掺杂使铌酸锂晶体的能量损失函数有较大的增加，对光存储的效率有一定影响。铁的掺杂使晶体的光学性质在可见光低能范围发生变化，吸收谱在可见光区域产生吸收峰，有利于晶体全息存储的应用。     

取代基对8-羟基喹啉金属配合物电子光谱和二阶非线性光学性质的影响

在B3LYP/LANL2DZ/6-31G^*水平上优化目标化合物分子的几何结构,并分别在TD- B3LYP/LANL2DZ/6-31++G^**和B3LYP/LANL2DZ/6-31++G^**水平计算目标化合物分子的电子吸收光谱和二阶非线性光学性质.计算结果表明,引入共轭给电子基使配合物分子的最大吸收波长红移,强共轭吸电子基的引入使配合物的最大吸收波长蓝移,取代基的引入使IrQ₃型配合物的二阶非线性光学性质明显增大.对AgQ型配合物,电子跃迁属于配体内部的电荷转移（LLCT）.对PtQ₂和IrQ₃型配合物,电子跃迁属于LLCT和部分金属向配体的电荷转移.取代基对AgQ,PtQ₂,IrQ₃型配合物分子的跃迁性质几乎无影响. 关键词： 8-羟基喹啉金属配合物 电子光谱 二阶非线性光学性质 密度泛函理论     

Synthesis,spectral, thermal,optical and dielectric studies on 4-dimethylaminopyridinium picrate crystals

Single crystal of 4-dimethylaminopyridinium picrate was grown by slow evaporation solution growth method. The optical properties of the crystal were studied by using UV–vis absorption and transmittance studies. The emission spectrum indicates that the crystal shows green and red fluorescence emissions. The band gap energy of the crystal was calculated and it is found to be 2.05 eV. The thermal stability of the crystal was studied using thermogravimetry-differential thermal (TG-DTA) analyses. The thermal anomalies observed in the differential scanning calorimetry (DSC) heating and cooling cycles indicate the occurrence of a first order phase transition. FTIR spectrum was used to confirm the presence of various functional groups in the crystal. The synthesized crystal shows SHG efficiency 32 times greater than that of potassium dihydrogen phosphate (KDP). The dielectric constant and dielectric loss of the crystal decreases with increases in frequency.     

Formation energies and electronic structures of native point defects in potassium dihydrogen phosphate

The formation energies and the equilibrium concentration of vacancies,interstitial H,K,P,O and antisite structural defects with P and K in KH 2 PO 4 (KDP) crystals are investigated by ab initio total-energy calculations.The formation energy of interstitial H is calculated to be about 2.06 eV and we suggest that it may be the dominant defect in KDP crystal.The formation energy of an O vacancy (5.25 eV) is much higher than that of interstitial O (0.60 eV).Optical absorption centres can be induced by defects of O vacancies,interstitial O and interstitial H.We suggest that these defects may be responsible for the lowering of the damage threshold of the KDP.A K vacancy defect may increase the ionic conductivity and therefore the laser-induced damage threshold decreases.     

杂质对KDP晶体光学质量的影响

 研究了几类可能出现在KDP晶体的生长溶液中的有机物杂质和无机阴离子杂质基团对KDP晶体散射、透过率、光损伤阈值等光学质量的影响，结果表明，不同种类的杂质的影响并不相同，造成这一结果的根本原因在于杂质离子的结构及其与晶体表面原子成键能力的不同。     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

Linear and nonlinear optical properties of dye-doped KDP crystals: Effect of thermal treatment

Potassium dihydrogen phosphate crystals (KDP, KH₂PO₄) doped with the organic xylenol orange (XO) dye are grown, the XO concentration in the crystal matrix is about 10 ppm. The spectral and luminescent properties of nominally pure, dye-doped and dye-doped/annealed at 150 °C crystals (KDP, KDP:XO and KDP:XO_an) were measured. The annealing temperature effect on the degree of dye protonation in the crystal matrix is established. Analysis of the IR-absorption spectra reveals a strong interaction between the incorporated dye molecules and the hydrogen subsystem of the matrix. The nonlinear optical (NLO) properties of KDP, KDP:XO and KDP:XO_an crystals are studied within the self-action effect of picosecond laser pulses at 532 nm. The mechanism of photoinduced bleaching and the effects of laser beam self-focusing (in KDP) and self-defocusing (in KDP:XO and KDP:XO_an) are supposed to be due to resonance excitation of the subsystems of intrinsic defects and dye molecules, correspondingly. For KDP:XO_an it is shown that thermal annealing of intrinsic crystal defects leads to domination of more effective NLO response of the subsystem of dye molecules that is correlated with photoluminescence data.     

Effect of S Substitution for P Point Defects in KDP Crystals： First-Principles Study

The electronic structure and geometric distribution of phosphor replaced by sulfur in potassium dihydrogen phosphate （KDP） are investigated by first-principles calculations. The point defect narrows down the energy gap to about 4.9eV, corresponding to a two-photon absorption of 355nm after correction. This can explain the decrease of the laser damage resistance in KDP crystals. Moreover, the defects twist the crystal structure and weaken bonds, especially the O-H bonds, so these bonds may be the first sites to crack under laser irradiation.     

Raman gains of ADP and KDP crystals

In this paper, the Raman gain coefficients of ammonium dihydrogen phosphate(ADP) and potassium dihydrogen phosphate(KDP) crystals are measured. By using a pump source of a 30-ps, 532-nm laser, the gain coefficients of ADP and KDP are 1.22 cm/GW, and 0.91 cm/GW, respectively. While for a 20-ps, 355-nm pump laser, the gain coefficients of these two crystals are similar, which are 1.95 cm/GW for ADP and 1.86 for KDP. The present results indicate that for ultra-violet frequency conversion, the problem of stimulated Raman scattering for ADP crystal will not be more serious than that for KDP crystal. Considering other advantages such the larger nonlinear optical coefficient, higher laser damage threshold,and lower noncritical phase-matching temperature, it can be anticipated that ADP will be a powerful competitor to KDP in large aperture, high energy third-harmonic generation or fourth-harmonic generation applications.     

Effect of Ba in KDP crystal on the wavelength dependence of laser-induced damage

Ba impurity in potassium dihydrogen phosphate(KDP) is studied with the first-principle simulation method. The relaxed configurations and density of the states of KDP crystal with Ba impurity are calculated. We find that Ba can generate a K vacancy and an interstitial O-H unit for charge compensation. The band gap of KDP crystal narrowed down to about 3.9 eV,which is consistent with the experimental data from previously reported studies and indicates that Ba may be a source of low-damage threshold.     

Characterization of biaxial crystals for tangentially phase-matched frequency conversion

Ultraviolet radiation has been generated by tangentially phase-matched sum-frequency mixing in biaxial L-arginine phosphate (LAP) crystal for the first time using Nd:YAG output at 1064 nm and Rh 6G dye laser output at 560 nm as the two input sources. Characterization has also been made of such a cheap, biaxial crystal for its possible use in devices for tangentially phase-matched short wavelength generation. If the crystal is of proper cut, thickness and quality so that its maximum capability can be exploited it can replace the potassium dihydrogen phosphate (KDP) group of crystals for various applications.     

气体吸附对硅锗异质结纳米线电子结构与光学性质的影响

基于密度泛函理论体系下的广义梯度近似(GGA),采用第一性原理方法探讨了沿[112]晶向的硅锗异质结纳米线作为气体传感器检测CO,CO₂和Cl₂的能力,着重计算了其吸附气体分子前后的吸附能、能带结构与光学性质.几何结构优化计算表明：不同硅锗组分的[112]晶向的硅锗纳米线对CO,CO₂和Cl₂分子的吸附能的绝对值在0.001 eV至1.36 eV之间,其中Si₂₄Ge₃₆H₃₂对CO₂气体的吸附能最大,气敏性能最好.能带结构计算表明：吸附CO和CO₂分子的[112]晶向硅锗纳米线能带的简并度明显减小,带隙变化较小;而吸附Cl₂分子后的价带顶与导带底之间产生了杂质能级使其带隙减小.光学性质计算表明：Si₂₄Ge₃₆H₃₂纳米线吸附CO, CO₂和Cl₂分子后的光学...